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    TRW 10001 Search Results

    TRW 10001 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SF-NLMAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLMAMB0001-0001 OSFP 400G Loopback Adapter Module for OSFP Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    SF-NLNAMB0001-0001 Amphenol Cables on Demand Amphenol SF-NLNAMB0001-0001 QSFP-DD 400G Loopback Adapter Module for QSFP-DD Port Testing - 0dB Attenuation & 0W Power Consumption [400-Gigabit Ethernet Ready] Datasheet
    10001489-056HALF Amphenol Communications Solutions Assembly, Top Mount, S/D(68Pins), R/A, Type 123, 5V, 5.6mm s/o, Right 31mm Push Rod Eject, 9.5mm Eject Travel Visit Amphenol Communications Solutions
    810001BK-22LF Renesas Electronics Corporation FemtoClock™ Dual VCXO Video PLL Visit Renesas Electronics Corporation
    810001BK-22LFT Renesas Electronics Corporation FemtoClock™ Dual VCXO Video PLL Visit Renesas Electronics Corporation

    TRW 10001 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd ra6

    Abstract: XDR DRAM XDR Rambus SMD fuse BA
    Text: TC59YM816BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF TC59YM816BKG24A 256Mb smd ra6 XDR DRAM XDR Rambus SMD fuse BA

    xdr rambus

    Abstract: SMD fuse BA
    Text: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Lead Free OVERVIEW The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF TC59YM916BKG24A 512Mb xdr rambus SMD fuse BA

    s34 diode

    Abstract: transistor SMD t17 XDR Rambus TPDN SMD fuse BA
    Text: TC59YM916BKG24A,32A,32B,40B,32C,40C TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC OVERVIEW Lead Free The Rambus XDRTM DRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high


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    PDF TC59YM916BKG24A 512Mb s34 diode transistor SMD t17 XDR Rambus TPDN SMD fuse BA

    voice scrambling

    Abstract: ambulance TAG Semiconductor speech scrambler voice encryption ic Variable split band scrambling police TRW speech
    Text: CML Semiconductor Products AN/Sec/Gen /1 November 1997 Inversion Security Devices Split-Band Scrambling Furnishes Voice Security Unwanted consequences of third-party radio communications eavesdropping include foiled drug raids, unsolved burglaries and pirated business opportunities.


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    E 1636 C

    Abstract: ADE-602-105H SH7708 SH7708R SH7708S TFP-144 HD6417708S
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF TFP-144: SH7708S) TFP-144 SH7708 E 1636 C ADE-602-105H SH7708R SH7708S TFP-144 HD6417708S

    SH7708R

    Abstract: HD6417708F60 SH7708 SH7708S TFP-144 HD6417708RF100
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF TFP-144: SH7708S) TFP-144 SH7708 SH7708R HD6417708F60 SH7708S TFP-144 HD6417708RF100

    Hitachi DSA002720

    Abstract: No abstract text available
    Text: Hitachi SuperH RISC engine SH7708 Series SH7708, SH7708S, SH7708R Hardware Manual ADE-602-105G Rev.8.0 3/21/00 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


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    PDF SH7708 SH7708, SH7708S, SH7708R ADE-602-105G TFP-144 TFP-144: SH7708S) Hitachi DSA002720

    HD6417708RF100A

    Abstract: Hitachi DSA00174
    Text: Hitachi SuperH RISC engine SH7708 Series SH7708, SH7708S, SH7708R Hardware Manual ADE-602-105H Rev.9.0 9/18/00 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


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    PDF SH7708 SH7708, SH7708S, SH7708R ADE-602-105H TFP-144: SH7708S) TFP-144 HD6417708RF100A Hitachi DSA00174

    HD6417708F60

    Abstract: ICE7816-3 memory-bus arbitration ADE-602-096 HD6417708RF100
    Text: SH7708 Series SH7708, SH7708S, SH7708R Hardware Manual Rev. 5.0 3/30/98 Hitachi, Ltd. Pro-Setsu Notice When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole


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    PDF SH7708 SH7708, SH7708S, SH7708R Hitach08, SH7708R) TFP-144: SH7708S) HD6417708F60 ICE7816-3 memory-bus arbitration ADE-602-096 HD6417708RF100

    Hitachi DSA00306

    Abstract: SH7708 SH7708R SH7708S TFP-144
    Text: SH7708 Series SH7708, SH7708S, SH7708R Hardware Manual ADE-602-105E Rev.6.0 5/5/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


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    PDF SH7708 SH7708, SH7708S, SH7708R ADE-602-105E 7708R) TFP-144: SH7708S) Hitachi DSA00306 SH7708R SH7708S TFP-144

    bt 1488

    Abstract: diode marking code 4n phe 450 rn SH7000 SH7600 SH7708 SH7708R SH7708S 63A18 Hitachi DSA00200
    Text: SH7708 Series SH7708, SH7708S, SH7708R Hardware Manual ADE-602-105D Rev.5.0 09/09/98 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


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    PDF SH7708 SH7708, SH7708S, SH7708R ADE-602-105D eve7708R) TFP-144: SH7708S) bt 1488 diode marking code 4n phe 450 rn SH7000 SH7600 SH7708R SH7708S 63A18 Hitachi DSA00200

    ambulance

    Abstract: voice encryption ic speech scrambler scrambling TAG Semiconductor Variable split band scrambling trw 10001 frequency hopping tactical
    Text: APPLICATION NOTE Variable Split-Band Scrambling VSB Variable Split-Band Scrambling (VSB) Furnishes Voice Security Introduction Voice scrambling offers tactical security for radio dispatch communications. It takes so long, even for a dedicated eavesdropper, to unscramble your transmissions that the information would be worthless by then.


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    10bit DAC 10V output

    Abstract: BD8139EFV BD8139AEFV tlc 1125 BD8132EFV diode 38v2 ic pin and diagram BD8132FV HTSSOP-B40 SSOP-B40
    Text: TECHNICAL NOTE Power Supply IC Series for TFT-LCD Panels High-Precision Gamma Correction ICs with built-in DAC BD8132FV, BD8139AEFV zDescription These gamma correction voltage generation ICs feature built-in DACs and provide a single-chip solution with setting control via serial


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    PDF BD8132FV, BD8139AEFV 10-bit 18-channel 10-channel) BD8139AEFV) BD8132FV) SSOP-B40 10bit DAC 10V output BD8139EFV BD8139AEFV tlc 1125 BD8132EFV diode 38v2 ic pin and diagram BD8132FV HTSSOP-B40

    st7626

    Abstract: diode cc 3053 D1474 cc 3053 D1460 D2914 35185 microprocessor instruction instruction set ic 3524 boost regulator D2911 ic 3524 internal block diagram
    Text: ST Sitronix ST7626 65K Color Dot Matrix LCD Controller/Driver 1. INTRODUCTION The ST7626 is a driver & controller LSI for 65K color graphic dot-matrix liquid crystal display systems. It generates 294 Segment and 68 Common driver circuits. This chip is connected directly to a microprocessor, accepts Serial Peripheral


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    PDF ST7626 ST7626 8-bit/16-bit diode cc 3053 D1474 cc 3053 D1460 D2914 35185 microprocessor instruction instruction set ic 3524 boost regulator D2911 ic 3524 internal block diagram

    ct 3f5 1

    Abstract: bd8139
    Text: BD8139AEFV Power Supply IC Series for TFT-LCD Panels High-precision Gamma Correction ICs with built-in DAC BD8132FV, BD8139AEFV No.09035EBT02 ●Description These gamma correction voltage generation ICs feature built-in DACs and provide a single-chip solution with setting control


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    PDF BD8139AEFV BD8132FV, 09035EBT02 10-bit 18-channel 10-channel) BD8139AEFV) BD8132FV) ct 3f5 1 bd8139

    BD8139AEFV

    Abstract: tlc 1125 BD8132FV HTSSOP-B40 SSOP-B40 7515 505 N1 ct 3f5 1 bd8139
    Text: Power Supply IC Series for TFT-LCD Panels High-precision Gamma Correction ICs with built-in DAC BD8132FV, BD8139AEFV No.09035EBT02 ●Description These gamma correction voltage generation ICs feature built-in DACs and provide a single-chip solution with setting control


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    PDF BD8132FV, BD8139AEFV 09035EBT02 10-bit 18-channel 10-channel) BD8139AEFV) BD8132FV) BD8139AEFV tlc 1125 BD8132FV HTSSOP-B40 SSOP-B40 7515 505 N1 ct 3f5 1 bd8139

    BD8132FV

    Abstract: No abstract text available
    Text: BD8132FV Power Supply IC Series for TFT-LCD Panels High-precision Gamma Correction ICs with built-in DAC BD8132FV, BD8139AEFV No.09035EBT02 ●Description These gamma correction voltage generation ICs feature built-in DACs and provide a single-chip solution with setting control


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    PDF BD8132FV BD8132FV, BD8139AEFV 09035EBT02 10-bit 18-channel 10-channel) BD8139AEFV) BD8132FV) BD8132FV

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


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    pmi op400

    Abstract: PMI OP 400 B24DA 86D9-264-6114-7550E1 1N3062 THC1202 THC1202E1C THC1202S6V 40-pin right-angle male connector ttl oscillator
    Text: TH C 1202 Complete High-Speed A/D Converter Features Conversion Rate DC To 10M sps 12-Bit, 10Msps Large-Signal B a n d w id th > 7 0 M H z N o M issing Codes, G uaranteed The TH C 1202 is a com plete 1 2 -b it 10M sps a n a lo g -to digital converter th a t includes all th e c irc u itry required to


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    PDF THC1202 12-Bit, 10Msps THC1202 12-bit 10Msps 70MHz THC1202E1C pmi op400 PMI OP 400 B24DA 86D9-264-6114-7550E1 1N3062 THC1202E1C THC1202S6V 40-pin right-angle male connector ttl oscillator

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    X68C64

    Abstract: X86C64 zilog ky
    Text: Yinnp Preliminary Information Z8 Microcontroller Family Compatible X86C64 64K 8192 x 8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION • CONCURRENT READ WRITE — Dual Plane A rc h ite ctu re Isolates Read/W rite F u n ctio n s Between Planes A llo w s C o n tin u o u s E xecution o f Code


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    PDF X86C64 X68C64 zilog ky

    3b682

    Abstract: PC638
    Text: 68XX Microcontroller Family Compatible 64K X68C64 J&EOI! 8192 x 8 Bit E2 Micro-Peripheral FEATURES DESCRIPTION * CONCURRENT READ WRITE — Dual Plane Architecture — Isolates Read/Write Functions Between Planes — Allows Continuous Execution of Code From One Plane While Writing in


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    PDF X68C64 M6801/03, M68HC11 120ns 3b682 PC638

    Untitled

    Abstract: No abstract text available
    Text: msm No. 84-01 4-1-1984 CMOS 64 bit PROM RF/RP5H01 PIN CONFIGURATION Top view • GENERAL DESCRIPTION RF5H 01/RP5H 01 is a P R O M w ith 64 x lb it organization (+ dummy 8 bits), em ploying 2-layer silicon gate C M O S processing technology. ■ FEATURES


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    PDF RF/RP5H01 01/RP5H 550/zW 15typ 95typ 54typ 46typ

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711