M38510/10101
Abstract: 14538B MOTOROLA smd transistor 72k code eprom smd atmel QP7C185A M38510-11003 QP7C198 8708 eprom M38510/11201 M38510/10105
Text: Product Selector Guide March 28, 2005 Analog Description Package SMD Number Part Number DIP 5962-87786 TDC1046 TRW DIP, LCC 5962-88532 TDC1049C1V TRW National A/D Converter, 6-Bit Flash A/D Converter, 9-Bit Comparator, Differential Die Mfg DIP, CAN, FP, LCC
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TDC1046
TDC1049C1V
M38510/10301
LM710
LM160
LM161
SE529
M38510/10305
QP2111
M38510/10101
14538B MOTOROLA
smd transistor 72k
code eprom smd atmel
QP7C185A
M38510-11003
QP7C198
8708 eprom
M38510/11201
M38510/10105
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SM5838AS
Abstract: No abstract text available
Text: SM5838AS 5120 x 8-bit Synchronous FIFO OVERVIEW The SM5838AS is a 5120 × 8-bit synchronous FIFO first in, first out high-speed line buffer. Internally, it employs static CMOS circuits which mean that it effectively has limitless data hold times. It can operate at
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SM5838AS
SM5838AS
NC9411BE
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KS0713
Abstract: what is COG capacitor KS0713 page SM 5271
Text: 65COM/132SEG DRIVER & CONTROLLER FOR STN LCD KS0713 INTRODUCTION The KS0713 is a driver and controller LSI for graphic dot-matrix liquid crystal display systems. It contains 65 common and 132 segment driver circuits. This chip is connected directly to a microprocessor, accepts 8-bit serial
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65COM/132SEG
KS0713
KS0713
COM16
COM33
what is COG capacitor
KS0713 page
SM 5271
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DIODE HF 20
Abstract: 74ACT2708 74ACT2708PC N28B
Text: Revised January 1999 74ACT2708 64 x 9 First-In, First-Out Memory General Description Features The ACT2708 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data rate makes it ideal for high-speed
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74ACT2708
ACT2708
64-words
74ACT2708
DIODE HF 20
74ACT2708PC
N28B
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N28B
Abstract: 74ACT2708 74ACT2708PC
Text: 74ACT2708 64 x 9 First-In, First-Out Memory General Description Features The ACT2708 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data rate makes it ideal for high-speed applications. It uses a dual port RAM architecture with
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74ACT2708
ACT2708
N28B
74ACT2708
74ACT2708PC
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robinson-nugent din
Abstract: TDC1112
Text: THC1069 Complete High-Speed A/D Converter 9-Bit, 37 Msps The TRW THC1069 is a complete analog-to-digital converter that combines all the circuitry required to convert high-speed analog signals into 9-bit digital data at rates up to 37 Msps Megasamples per second . The THC1069
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THC1069
THC1069
32-pin
THC1069s
robinson-nugent din
TDC1112
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B20n
Abstract: 8609 souriau TDC1112 THC1069 THC1069E1C THC4940 RNE-64BS-S-TG 8609-264-6114-7550E1
Text: THC1069 7 T i Complete High-Speed A/D Converter 9-Bit, 37 Msps The TRW THC1069 is a complete analog-to-digital converter that combines all the circuitry required to convert high-speed analog signals into 9-bit digital data at rates up to 37 Msps Megasamples per second . The THC1069
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THC1069
THC1069
32-pin
THC1069s
THC1069E1C
B20n
8609 souriau
TDC1112
THC1069E1C
THC4940
RNE-64BS-S-TG
8609-264-6114-7550E1
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motorola 6820
Abstract: motorola 7852 motorola 8026 motorola ST 1076 trw 7730 6840 1 motorola ic 8279
Text: MOTOROLA SC 1EE D I b3t.7ESM GGfifiMGl 3 | XSTRS/R F MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA TRW 53001 Se rie s The RF Line M ic r o w a v e Linear P o w e r T ra n sisto rs 7.5 TO 8.5 dB 1 TO 3 GHz 0.8 W ATT M ICRO W AVE LINEAR POWER T R A N SIST O R S
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TW-200
TRW53001
TRW53001
JUNCT10N
motorola 6820
motorola 7852
motorola 8026
motorola ST 1076
trw 7730
6840 1 motorola
ic 8279
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trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .
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TDC1012
Abstract: TDC1048 MARKING lsi logic 10-TURN FHC1068 THC1068 THC1068E1C THC1068S7V1 irf 5110 B24DA
Text: FHC1068 7 #7 r V Complete High-Speed A/D Converter 8-Bit, 25Msps Designed to be user-friendly, th e T H C 1068 is a com plete flash ana lo g -to -d ig ita l conve rter th a t com bines all circuitry required to convert high-speed analog signals into 8 -b it
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FHC1068
25Msps
THC1068
TDC1048
TDC1012
MARKING lsi logic
10-TURN
FHC1068
THC1068E1C
THC1068S7V1
irf 5110
B24DA
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TDC1012
Abstract: THC1068E1C RNE-64BS-S-TG
Text: M t\V W THC1068 Complete High-Speed A/D Converter 8-Bit, 25Msps Designed to be user-friendly, the THC1068 is a complete flash analog-to-digital converter that combines all circuitry required to convert high-speed analog signals into 8-bit digital data at rates of up to 25Msps MegaSamples Per
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THC1068
25Msps
THC1068
TDC1048
TDC1012
THC1068E1C
RNE-64BS-S-TG
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1030J6C
Abstract: C1030B TDC1030B6C 1030J6A
Text: m m m T D C 1 0 3 0 M First-In First-Out Memory 64 Words by 9 Bits Cascadable T he T R W T D C 1 0 3 0 is an expandable, First-In First-Out FIFO m em ory organized as 64 w o rd s by 9 bits. A 1 5 M H z data rate m akes it ideal in high-speed ap p li cations. Bu rst data rates of 18MFHz can be obtained in
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18MFHz
1030J6C
C1030B
TDC1030B6C
1030J6A
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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TRW 1030J6C
Abstract: 1030J6C SO-64 TDC1030B6C TDC1030 TDC1030B6A TDC1030C3A TDC1030C3C
Text: iiiv r TDC1030 First-In First-Out Memory Features 6 4 W o rd s by 9 Bits C ascadable • 6 4 W o r d s B y 9 B it s O r g a n iz a t io n T h e T R W T D C 1 0 3 0 is a n e x p a n d a b le , F ir st -In F ir s t - O u t F IF O m e m o r y o r g a n iz e d a s 6 4 w o r d s b y 9 bits. A
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TDC1030
TDC1030
15MHz
18MHz
devi28
1030J6C
1030J6A
TRW 1030J6C
SO-64
TDC1030B6C
TDC1030B6A
TDC1030C3A
TDC1030C3C
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ALH208C
Abstract: TRW mmic 9701455-S-J1
Text: ALH208C Low-Noise Amplifier GaAs Telecom Products Features • RF frequency: 35-45 GHz • Linear gain: 12 dB • NF: 3.5 dB • Unconditionally stable • Balanced design provides excellent input and output VSWR • Self-bias design single supply • DC power: 5 Vdc at 36 mA
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ALH208C
ALH208C
i-2500
9701455-1001-S-J1
9701455-S-J1
TRW mmic
9701455-S-J1
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CA2800
Abstract: 709P trw hybrid
Text: T R li E LEK C r iP N T / R F S'! » Ë J ûfiSSOSM 0D03Û70 ? | T ~ 7 y .Q 9 . p ; R F Devices Division T R W Electronic Components Group CA2800 Power Output, 800mW 17dB Gain 400mW PEP @ - 32dB IMD Instantaneous Bandwidth, 10-400MHz Low Noise Figure, 5dB
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-09-pÂ
CA2800
800mW
400mW
-32dB
10-400MHz
CA2800
125REF-
-32dB
709P
trw hybrid
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M51100A
Abstract: MSM6388 MSM6588 MSM6691 MSM OKI 0017E
Text: O K I Semiconductor IC MSM6691 DRAM INTERFACE LSI Description Features DRAMs can be used for voice storage by connecting the MSM6691 with Oki's integrateR/W Read/Write LSIs, theMSM6388, and the MSM6588. TheMSM6691 translates the signals associated with the dedicated
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MSM6691
MSM6691
theMSM6388,
MSM6588.
TheMSM6691
MSM6388
MSM6588
16-bit
M51100A,
M511001A)
M51100A
MSM OKI
0017E
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PI-38
Abstract: No abstract text available
Text: •HYUNDAI HYM594000B Series SEMICONDUCTOR 4M X 9-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM594000B is a 4M x 9-bit Fast page mode CM O S DRAM module consisting of two HY5117400 in 24/28 pin SO J and one HY514100A in 20/26 pin SO J on a 30 pin glass-epoxy printed circuit board. 0.22nF decoupling
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HYM594000B
HY5117400
HY514100A
HYM594000BM/BLM
1BC0e-00
MAY93
53-BEFORE-H
1BC06-00
PI-38
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MSM5416256
Abstract: No abstract text available
Text: O K I Semiconductor MSII5 4 1 6 2 5 8 A_ 262,144-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5416258A is a 262,144-word x 16-bit configuration fast page mode type DRAM with EDO. The MSM5416258A achieves high integration, high-speed operation, and low-power consumption
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144-Word
16-Bit
MSM5416258A
40-pin
MSM5416256
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ac723
Abstract: No abstract text available
Text: AC723 • ACT723 54AC/74AC723 • 54ACT/74ACT723 64 x 9 First-In, First-Out Memory Description Connection Diagrams The ’AC/’ACT723 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data
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AC723
ACT723
54AC/74AC723
54ACT/74ACT723
ACT723
54/74AC/ACT
ac723
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AC723
Abstract: TRW10 NE 5322 TRW1030
Text: AC723 • ACT723 54AC/74AC723 • 54ACT/74ACT723 64 x 9 First-In, First-Out Memory Connection Diagrams Description The ’AC/’ACT723 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data
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AC723
ACT723
54AC/74AC723
54ACT/74ACT723
ACT723
54/74AC/ACT
AC723
TRW10
NE 5322
TRW1030
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Untitled
Abstract: No abstract text available
Text: DALLAS DS122?7 s e m ic o n d u c to r K ickstarter Chip PIN ASSIGNMENT FEATURES • Provides step-up regulation and microenergy management for battery-operated systems VCC02 £ 1 VCC03 [ 2 VCC01 [ 3 • Converts +3V to +6V DC input power source to +5V DC out for system power
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outpu27
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DIODE 1N418
Abstract: 1N5418V Nytronics PL B64290-K38 nytronics delay
Text: DALLAS SEMICONDUCTOR DS1227 Kickstarter Chip PIN ASSIGNMENT FEATURES • Provides step-up regulation and microenergy management for battery-operated systems VCC02 £ 1 VCC03[ 2 VCCOI [ 3 pwron[ 4 VDCO[ S • Converts +3V to +6V DC input power source to +5V
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DS1227
VCC02
VCC03[
VCC04
DS1227
DIODE 1N418
1N5418V
Nytronics PL
B64290-K38
nytronics delay
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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