code 842 8 PIN SMD
Abstract: smd code 842 RJ-9 977MHz
Text: Flexibility & Innovation …. DS0093. 02 2/04/02 DATA S HEET TSD0886-01 CT1+ S.A.W.DUPLEXER PRELIMINARY SPECIFICATION PACKAGE SMD5 PRODUCT F EATURES : Ø LOW LOSS 1.30 Typ. Ø HIGH REJECTION 1.27 Typ. Ø SMALL SMD P ACKAGE 2.54 Typ. 5.00 ± 0.20 D C CONTACT :
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DS0093.
TSD0886-01
TA-05
code 842 8 PIN SMD
smd code 842
RJ-9
977MHz
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RJ-9
Abstract: DS0093 smd 842
Text: Flexibility & Innovation …. DS0093. 01 23/05/00 DATA SHEET TSD0886-01 CT1+ S.A.W.DUPLEXER PRELIMINARY SPECIFICATION PACKAGE SMD5 PRODUCT FEATURES : Ø LOW LOSS 1.30 Typ. Ø HIGH REJECTION 1.27 Typ. Ø SMALL SMD PACKAGE 2.54 Typ. 5.00 ± 0.20 D 0.60 Typ.
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TSD0886-01
DS0093.
886MHz
931MHz
RJ-9
DS0093
smd 842
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71WS256NC0BAIAU
Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
71WS256NC0BAIAU
cosmoram synchronous
S71WS256NC0
S71WS256ND0
S71WS512ND0
TSD084
S71WS512NC0BFIAZ
SA002
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S29WS128N
Abstract: S29WS256N S71WS128NB0 S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512N S71WS-N marking YJ AM
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet (Advance Information) Notice to Readers: This document states the current technical specifications regarding the Spansion
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S71WS-N
S71WS-N
S29WS128N
S29WS256N
S71WS128NB0
S71WS128NC0
S71WS256NC0
S71WS256ND0
S71WS512N
marking YJ AM
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TPH20SST
Abstract: TTD18 TCC44B 84 pin plcc ic base TSD28 TPH32SST TCC32PSM2 ttd28 TTD16 TTD08
Text: CONNECTORS IC SOCKETS, Formed TAICOM type TSD DUAL IN-LINE DIL Open frame dual in-line IC sockets with large entry, dual wipe, stamped and formed contacts which offer high reliability at low cost. Black UL94V-0 low profile moulded bodies have closed based design and are end and side stackable. Pin spacing 2.54mm (0.1in) except
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UL94V-0
TSD06
TSD08
TSD14
TSD16
TSD18
TSD20
TSD22A
TSD22
TSD24A
TPH20SST
TTD18
TCC44B
84 pin plcc ic base
TSD28
TPH32SST
TCC32PSM2
ttd28
TTD16
TTD08
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Untitled
Abstract: No abstract text available
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG
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S71WS-N
S71WS-N
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Untitled
Abstract: No abstract text available
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV UHJDUGLQJ WKH 6SDQVLRQ SURGXFW V GHVFULEHG KHUHLQ (DFK SURGXFW GHVFULEHG
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S71WS-N
S71WS-N
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S71WS512ND0BFWEP
Abstract: LZ 48H 526 71WS512ND0BFWEP BAX55 S71WS512 71WS512ND
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CELLULAR RAM ADVANCE INFORMATION Datasheet Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
S71WS512ND0BFWEP
LZ 48H 526
71WS512ND0BFWEP
BAX55
S71WS512
71WS512ND
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L1-L10
Abstract: MD-12 WS128N dc m7 footprint JESD 95-1, SPP-010 top mark e5 S71WS-N S29WS128N S29WS256N S71WS128NB0
Text: S71WS-N Stacked Multi-Chip Product MCP 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with CellularRAM S71WS-N Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,
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S71WS-N
S71WS-N
L1-L10
MD-12
WS128N
dc m7 footprint
JESD 95-1, SPP-010
top mark e5
S29WS128N
S29WS256N
S71WS128NB0
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BAX55
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
S71WS-N-00
S71WS-N-00
BAX55
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Untitled
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS512Nx0/S71WS256Nx0
32M/16M
16-Bit)
S71WS-N-01
S71WS-N-01
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71WS512ND
Abstract: 4136P
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
71WS512ND
4136P
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s29ws128n
Abstract: S71WS-Nx0 S29WS-N S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512ND0 S71WS-N TSD084 UtRAM Density
Text: S71WS-Nx0 Based MCPs Stacked Multi-Chip Product MCP 128/256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with pSRAM Type 4 ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS-Nx0
32M/16M
S71WS-N
s29ws128n
S29WS-N
S71WS128NC0
S71WS256NC0
S71WS256ND0
S71WS512ND0
TSD084
UtRAM Density
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71WS512ND
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512N/256N
71WS512ND
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Spansion S99
Abstract: s98ws256ne0fw0020 S99-50047-ES FTJ103 FLG103 50124 transistor s99 S99-50083 S99/S19 S99-50124-02
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA March 07, 2008 Obsolescence Notification No: Subject: 2689 Rev.A Obsolescence of the 110nm, 1.8V Burst Mode Mirror Bit Flash Memory product Families, including S29WS-N, S29NS-N, S71WS-N, S71NS-N, S72WS-N, S72NS-N,
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110nm,
S29WS-N,
S29NS-N,
S71WS-N,
S71NS-N,
S72WS-N,
S72NS-N,
S75WS-N,
S75NS-N,
S98WS-N
Spansion S99
s98ws256ne0fw0020
S99-50047-ES
FTJ103
FLG103
50124
transistor s99
S99-50083
S99/S19
S99-50124-02
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Untitled
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
S71WS-N-00
S71WS-N-00
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WG A5 6D 25 Z
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Data Sheet 1RWLFH WR 5HDGHUV 7KLV GRFXPHQW VWDWHV WKH FXUUHQW WHFKQLFDO VSHFLILFDWLRQV
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S71WS512Nx0/S71WS256Nx0
32M/16M
16-Bit)
S71WS-N-01
S71WS-N-01
WG A5 6D 25 Z
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Untitled
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
S71WS-N-02
S71WS-N-02
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Untitled
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) pSRAM ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
S71WS-N-00
S71WS-N-00
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