c8051f902
Abstract: C8051F912 smbc 134DET mux88 C8051F32 C8051F912-GM cp1h 188SM C8051F90
Text: C8051F91x-C8051F90x Single/Dual Battery, 0.9–3.6 V, 16–8 kB, SmaRTClock, 12/10-Bit ADC MCU Ultra-Low Power - 160 uA/MHz in active mode 24.5 MHz clock - 2 us wake-up time (two-cell mode) - 10 nA sleep mode with memory retention; - 50 nA sleep mode with brownout detector
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C8051F91x-C8051F90x
12/10-Bit
F912/02
F911/01)
c8051f902
C8051F912
smbc
134DET
mux88
C8051F32
C8051F912-GM
cp1h
188SM
C8051F90
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SMJ44C251B
Abstract: 44C251 "Video RAM"
Text: SMJ44C251B 262144 BY 4-BIT MULTIPORT VIDEO RAM SGMS058A – MARCH 1995 – REVISED JUNE 1995 D D D D D D D D D Military Operating Temperature Range – 55°C to 125°C Performance Ranges: ACCESS TIME ROW ADDRESS MAX ta(R) ’44C251B-10 100 ns ’44C251B-12 120 ns
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SMJ44C251B
SGMS058A
44C251B-10
44C251B-12
SMJ44C251B
44C251
"Video RAM"
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SGMS056D
Abstract: SMJ55161 "Video RAM" SMJ55161-75
Text: SMJ55161 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS056D – MAY 1995 – REVISED OCTOBER 1997 D D D D D D D D D D D D D D D Organization: – DRAM: 262 144 by 16 Bits – SAM: 256 by 16 Bits Dual-Port Accessibility – Simultaneous and Asynchronous Access From the DRAM and
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SMJ55161
16-BIT
SGMS056D
16-Bit
SGMS056D
SMJ55161
"Video RAM"
SMJ55161-75
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SMJ55166
Abstract: SMJ55166-75 SMJ55166-80
Text: SMJ55166 262144 BY 16-BIT MULTIPORT VIDEO RAM SGMS057C – APRIL 1995 – REVISED JUNE 1997 D D D D D D D D D Organization: – DRAM: 262 144 Words x 16 Bits – SAM: 256 Words × 16 Bits Dual-Port Accessibility – Simultaneous and Asynchronous Access From the DRAM and
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SMJ55166
16-BIT
SGMS057C
16-Bit
SMJ55166
SMJ55166-75
SMJ55166-80
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Untitled
Abstract: No abstract text available
Text: C8051F410/1/2/3 2.0 V, 32/16 kB Flash, smaRTClock, 12-bit ADC Analog Peripherals - 12-Bit ADC - ±1 LSB INL; no missing codes Programmable throughput up to 200 ksps Up to 24 external inputs Data dependent windowed interrupt generator Built-in temperature sensor ±3 °C
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C8051F410/1/2/3
12-bit
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Untitled
Abstract: No abstract text available
Text: C8051F97x Low Power Capacitive Sensing MCU with up to 32 kB of Flash Low Power Consumption - 200 µA/MHz in active mode 24.5 MHz clock - 2 µs wakeup time - 55 nA sleep mode with brownout detector - 280 nA sleep mode with LFO - 600 nA sleep mode with external crystal
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C8051F97x
CIP-51
16-bit
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P119D
Abstract: C8051F800 CIP-51 QFN-20 QSOP-24 SOIC-16 C8051F805 16 pin diagram of RS 232 C8051F801
Text: C8051F80x-83x Mixed Signal ISP Flash MCU Family Capacitance to Digital Converter - Supports buttons, sliders, wheels, and capacitive High-Speed 8051 µC Core - Pipelined instruction architecture; executes 70% of proximity sensing instructions in 1 or 2 system clocks
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C8051F80x-83x
16-bit
10-Bit
P119D
C8051F800
CIP-51
QFN-20
QSOP-24
SOIC-16
C8051F805
16 pin diagram of RS 232
C8051F801
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driving point and transfer function
Abstract: TMS55165 TMS55166 "Video RAM" TMS55175 TMS55176 TMS571 X463
Text: TMS55165, TMS55166, TMS55175, TMS55176 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS463 – DECEMBER 1995 D D D D D D D D D D D Organization: DRAM: 262 144 Words x 16 Bits SAM: 256 Words × 16 Bits Single 5.0-V Power Supply ±10% Dual-Port Accessibility – Simultaneous and
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TMS55165,
TMS55166,
TMS55175,
TMS55176
16-BIT
SMVS463
driving point and transfer function
TMS55165
TMS55166
"Video RAM"
TMS55175
TMS55176
TMS571
X463
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MSM5416272
Abstract: No abstract text available
Text: E2L0020-17-Y1 ¡ Semiconductor MSM5416272 ¡ Semiconductor This version: Jan. 1998 MSM5416272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM5416272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit
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E2L0020-17-Y1
MSM5416272
144-Word
16-Bit
MSM5416272
144-word
16-bit
512-word
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MSM54V16272
Abstract: No abstract text available
Text: E2L0024-17-Y1 ¡ Semiconductor MSM54V16272 ¡ Semiconductor This version: Jan. 1998 MSM54V16272 Previous version: Dec. 1996 262,144-Word ¥ 16-Bit Multiport DRAM DESCRIPTION The MSM54V16272 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit
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E2L0024-17-Y1
MSM54V16272
144-Word
16-Bit
MSM54V16272
144-word
16-bit
512-word
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MSM5416263
Abstract: srt 0110
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM5416263
SSOP64-P-525-0
MSM5416263
srt 0110
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ns741
Abstract: MSM5416273 l1741
Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.
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MSM548263
Abstract: SOJ40 TFSC
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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J2L0017-17-Y1
MSM548263
MSM548263
144-Word
MSM548263262
RAM256K
SAM512
5128ms
40400milSOJSOJ40-P-400-1
MSM548263-xxJS
SOJ40
TFSC
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MSM5416283
Abstract: FJDS5416283
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FJDS5416283-05
MSM5416283
144-Word
16-Bit
MSM5416283262
16RAM
16SAMCMOS
RAM256K
SAM512
5128ms
MSM5416283
FJDS5416283
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tc528126
Abstract: TC528126B
Text: PRELIMINARY 131, 0 7 2 W O R D S x 3 B IT S M U L T IP O R T D R A M D E S C R IP T IO N The TC52812GBJ/BZ is a CMOS multiport memory equipped with a 131,072-words by 8-bits dynamic random access memory RAM port and a 256-words by 8-bits static serial access memory (SAM) port. The
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TC52812GBJ/BZ
072-words
256-words
TC528126BJ/BZ
TC52812GB
tc528126
TC528126B
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Untitled
Abstract: No abstract text available
Text: TMS55160 262144 BY 16-BIT MULTIPORT VIDEO RAM SMVS160B-AUGUST1992-REVISED JANUARY 1993 * * * * * DGH PACKAGEt DRAM : 262144 Words x 16 Bits SAM: 256 Words x 16 Bits TOP VIEW Dual Port Accessibility - Simultaneous and Asynchronous Access From the DRAM and
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TMS55160
16-BIT
SMVS160B-AUGUST1992-REVISED
16-Blt
77Q01
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MSM5416263
Abstract: 256x16* STATIC RAM weland SM5416
Text: OKI Semiconductor MSM5416263 262,144-W ord x 1 6 -Bit M ultiport D RA M DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416263
144-Word
16-Bit
MSM5416263
512-word
256x16* STATIC RAM
weland
SM5416
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KM428C257
Abstract: XAL W6 MAS 10 RCD sc 4145 CNR 14 V 471 K CA278 CI008 On Screen Display Samsung
Text: SA M S U N G E L E C T R O N I C S INC b7E D m 7^4142 001L>bb2 17Û SMGK PRELIMINARY KM428C257 CMOS VIDEO RAM 256K X 8 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION - Dual port Architecture 2 56 K x 8 bits RAM port 512 x 8 bits SAM port The Sam sung KM 428C 257 is a C M OS 256K x 8 bit Dual
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KM428C257
256KX
512x8
110ns
130ns
150ns
110mA
100mA
40-PIN
40/44-PIN
KM428C257
XAL W6
MAS 10 RCD
sc 4145
CNR 14 V 471 K
CA278
CI008
On Screen Display Samsung
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"Video RAM"
Abstract: KM4216V256 KM4216C256
Text: KM4216C/V256 CMOS VIDEO RAM 256K X 16 Bit CMOS Video RAM FEATURES The RAM a rray consists of 512 bit rows of 8192 bits. * Dual port A rchitecture 256K x 16 bits RAM port It operates like a conventional 256K x 16 C M O S DRAM. The RAM port has a write per bit m ask capability.
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4216C/V256
110ns
130ns
150ns
KM4216C256
120mA
110mA
100mA
KM4216V256
"Video RAM"
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MSM5416283-60
Abstract: MSM5416283 SAM256
Text: O KI Semiconductor MSM5416283 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.
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MSM5416283
144-Word
16-Bit
MSM5416283
512-word
SSOP60-P-700-0
MSM5416283-60
SAM256
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m514262
Abstract: MSM514262 MSM514262-10 MSM514262-70 MSM514262-80 ZIP28-P-400 M5M51426 MSM51426
Text: O K I Semiconductor MSM5 14262 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514262 is a 1-Mbit CMOS m ultiport DRAM com posed of a 262,144-word by 4-bits dynam ic RAM and a 512-words b y 4-bits SAM. Its RAM and SAM operate independently and asynchronously.
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MSM514262
144-Word
MSM514262
512-words
SOJ28-P-400-1
50MBB
SOJ32-P-400-1
m514262
MSM514262-10
MSM514262-70
MSM514262-80
ZIP28-P-400
M5M51426
MSM51426
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC524257P/Z/J-10, TC524257P/Z/J-12 DESCRIPTION The TC524257P/Z/J is a CMOS Multiport memory equipped with a 262,1 4 4 - w o r d x 4 bit dynamic random access memory RAM port and a 5 1 2 - w o r d x 4 bit static serial access memory(SAM) port.
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TC524257P/Z/J-10,
TC524257P/Z/J-12
TC524257P/Z/J
ZIP28-P-400
B-100
SQJ32-P-400
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TC524258AZ
Abstract: No abstract text available
Text: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits
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TC524258AJ/AZ-10
TC524258AJ/
X48ITS
TC524253AJ/AZ
144-words
512-words
TC524253AJ7
bein51
TC524253AJ
TC524258AJ
TC524258AZ
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC528257 t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION T h e T C 5 2 8 2 5 7 is a 2 M b it C M O S m u ltip o rt m e m o ry e q u ip p e d w ith a 2 6 2 ,1 4 4 -w o rd s b y ra n d o m access m e m o ry R A M p o rt an d a 5 1 2 -w o rd s b y
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TC528257
144WORDS
C-231
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