diode A6s
Abstract: BAS16 BAS16-03W BAS1602W BAS16-02L BAS16-02V BAS16-02W BAS16-07L4 BAS16S BAS16U
Text: BAS16. Silicon Switching Diode For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 1 Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 3 D 3 2 2 Type BAS16
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BAS16.
BAS16
BAS16W
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-03W
BAS16S
BAS16U
SCD80
diode A6s
BAS16
BAS16-03W
BAS1602W
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-07L4
BAS16S
BAS16U
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BAS16
Abstract: No abstract text available
Text: BAS16. Silicon Switching Diode For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 1 Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 3 D 3 2 2 Type BAS16
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BAS16.
BAS16
BAS16W
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-03W
BAS16S
BAS16U
SCD80
BAS16
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BAS16
Abstract: BAS16-02L
Text: BAS16-02L Silicon Switching Diode Preliminary data For high-speed switching application 2 1 Type BAS16-02L Marking A6 Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage- VRM 85 Forward current
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BAS16-02L
Aug-29-2001
100ns,
EHN00017
EHB00022
EHB00025
BAS16
BAS16-02L
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BBY52-02L
Abstract: BBY52 BBY52-02W SCD80
Text: BBY52. Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless
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BBY52.
BBY52-02L
BBY52-02W
BBY52-02L*
SCD80
Oct-24-2002
BBY52-02L
BBY52
BBY52-02W
SCD80
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marking code INFINEON
Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY52-02L BBY52-02W Type BBY52-02L BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless
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BBY52.
BBY52-02L
BBY52-02W
SCD80
marking code INFINEON
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Untitled
Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes • Ηigh Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO`s in mobile communications equipment • Pb-free RoHS compliant package BBY52-02L BBY52-02W Type BBY52-02L BBY52-02W Package TSLP-2-1
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BBY52.
BBY52-02L
BBY52-02W
SCD80
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Infineon Technologies Silicon Tuning Diode
Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless
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BBY52.
BBY52-02L
BBY52-02W
BBY52-02L*
SCD80
Oct-24-2002
Infineon Technologies Silicon Tuning Diode
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Untitled
Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless
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BBY52.
BBY52-02L
BBY52-02W
BBY52-02L*
SCD80
Oct-24-2002
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AN-081
Abstract: BGA619
Text: Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package no Lead or Halogen
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BGA619
AN081
AN-081
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free transistor
Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
Text: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package
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BFR740L3RH
free transistor
uln 2008
uln 2008 datasheet
Digital Oscilloscope Preamplifier
ULN 2009
ultra Low Noise ULN types
825000
LQP10A
MTA-100
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bat62-02l
Abstract: No abstract text available
Text: BAT62-02L Silicon Schottky Diode Preliminary data Low barrier diode for detectors up to GHz 2 frequencies Ultra small leadless package 1 1 2 EHA07001 Type BAT62-02L Marking L Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings Parameter Symbol Diode reverse voltage
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BAT62-02L
EHA07001
Aug-24-2001
bat62-02l
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BAR88
Abstract: TSLP "Varactor Diodes" BA892-02L BAR63-02L BAR64-02L BAR88-02L BAS70-02L BAT62-02L BBY57-02L
Text: P R O D U C T B R I E F New Discrete Products in Ultrasmall and Leadless TSLP Packages Superior chip-scale packaging concepts and leading edge manufacturing processes enable Infineon to be the first to come up with an innovative plastic leadless package for discrete devices
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SC-75
SC-79
B114-H7890-X-X-7600
BAR88
TSLP
"Varactor Diodes"
BA892-02L
BAR63-02L
BAR64-02L
BAR88-02L
BAS70-02L
BAT62-02L
BBY57-02L
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Untitled
Abstract: No abstract text available
Text: BFS380L6 NPN Silicon RF Transistor 4 Preliminary data 3 5 2 6 High current capability and low figure for 1 wide dynamic range application Low voltage operation Ideal for low phase noise oscillators up to 3.5 GHz P-TSLP-6-1 Low noise figure: 1.1 dB at 1.8 GHz
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BFS380L6
Feb-28-2002
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BFS386L6
Abstract: tr1150
Text: BFS386L6 NPN Silicon RF Transistor 4 Preliminary data 3 5 2 6 Low voltage/ low current operation 1 For low noise amplifiers For oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: TR1: 1.0dB at 1.8 GHz P-TSLP-6-1 TR2: 1.1 dB at 1.8 GHz 6
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BFS386L6
Feb-28-2002
BFS386L6
tr1150
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BFS360L6
Abstract: No abstract text available
Text: BFS360L6 NPN Silicon RF Transistor 4 Preliminary data Low voltage/ Low current operation 3 5 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 Low noise figure: 1.0 dB at 1.8 GHz 6 T R 1 5 T R 2 4 P-TSLP-6-1 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFS360L6
Jan-30-2003
BFS360L6
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marking NB transistor
Abstract: top marking 3c sot23 transistor marking 2A H SOT23 package diodes marking 2A marking EA SOT23 transistor marking ND SS MARKING sot23
Text: P - T S L P - 2 - 1 / P - T S L P - 3 - 1 Infineo n's lead less Pa cka ges P-TS LP-2-1 and TSLP-3 -1 T h e P last i c-T h i n S ma ll Lead l e ss Pa ck a g e with a dimension of 1,0 mm * 0,6 mm is one of the smallest available packages for discrete devices like
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B000-H0000-X-X-7600
marking NB transistor
top marking 3c sot23
transistor marking 2A H
SOT23 package diodes
marking 2A
marking EA SOT23
transistor marking ND
SS MARKING sot23
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kester r256
Abstract: paste profile NB 40 smd transistor kester Re SOLDER PASTE smd transistor marking PA
Text: P - T S L P - 2 - 1 / P - T S L P - 3 - 1 Recommendations for the Board Assembly Ta rge t T h e t a r g e t of this document is to provide guidelines for our customers to successfully introduce Infineon's leadless packages P-TSLP2-1 / P-TSLP-3-1 into production. This includes recommendations for board pad design, stencil layout, component placement, and soldering process. Generally standard SMT equipment and processes are suitable for
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B000-H0000-X-X-7600
kester r256
paste profile
NB 40 smd transistor
kester Re SOLDER PASTE
smd transistor marking PA
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Infineon moisture sensitive package
Abstract: EIA-726 EIA-747 label infineon barcode label infineon lot number barcode MSL label infineon lot number barcode JESD22B-102 label infineon lot number barcode label infineon J-STD-033
Text: R e c om m endati ons fo r P rin ted C i rc u i t Boar d Asse mbly o f Infineon TSL P /TSSLP/TS NP P ackages Ad d i tional Information June 2010 Table of Contents Table of Contents 1 Package Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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LV8063TT
Abstract: MSOP10 TSLP
Text: 注文コード No.N A 1 8 5 0 Bi-CMOS 集積回路 ファンモータ用 LV8063TT 単相全波ドライバ 概要 LV8063TTは単相ファンモータ用のドライバICで、BTLリニア出力方式により無効電力を抑制する ことで、高効率、低電力及び低ノイズでの駆動を行っている。BTL出力を外部信号によってPWM制御
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LV8063TT
LV8063TTICBTL
O1310
20100929-S00008
A1850-1/8
A1850-5/8
A1850-6/8
LV8063TT
MSOP10
TSLP
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2065A LV8163QA Bi-CMOS IC Fan Motor Driver ht t p://onse m i.c om Single-Phase Full-Wave Driver Overview The LV8163QA is a driver IC for single phase fan motor which operates noiselessly by BTL linear output method. The LV8163QA has variable speed function that corresponds to external PWM single input. Therefore, this IC is
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ENA2065A
LV8163QA
LV8163QA
A2065-7/7
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2065A LV8163QA Bi-CMOS IC Fan Motor Driver http://onsemi.com Single-Phase Full-Wave Driver Overview The LV8163QA is a driver IC for single phase fan motor which operates noiselessly by BTL linear output method. The LV8163QA has variable speed function that corresponds to external PWM single input. Therefore, this IC is
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ENA2065A
LV8163QA
LV8163QA
10here
A2065-7/7
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500k variable resistor
Abstract: No abstract text available
Text: Ordering number : ENA2065 Bi-CMOS IC Fan Motor Driver LV8163QA Single-Phase Full-Wave Driver Overview The LV8163QA is a driver IC for single phase fan motor which operates noiselessly by BTL linear output method. The LV8163QA has variable speed function that corresponds to external PWM single input. Therefore, this IC is suitable
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ENA2065
LV8163QA
LV8163QA
A2065-7/7
500k variable resistor
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA2065A Bi-CMOS IC Fan Motor Driver LV8163QA Single-Phase Full-Wave Driver Overview The LV8163QA is a driver IC for single phase fan motor which operates noiselessly by BTL linear output method. The LV8163QA has variable speed function that corresponds to external PWM single input. Therefore, this IC is suitable
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ENA2065A
LV8163QA
LV8163QA
A2065-7/7
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marking date code Sanyo semiconductor
Abstract: TSLP marking date code Sanyo amo package
Text: M e a s u r e M a s s g Uni t 5 0 / 1 (NTS) 0.0016 mm Q u 1 1 ine drawing *Foi Reference ti :L o t in di cat ion 1 SANYO P a c k a g e Code JEDEC P a c k a g e Code JE ITA P a c k a g e Code T y p e N u m b e r TSLP- D r a w i n g No. E n a c t No. Drawn
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OCR Scan
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