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    TSM34 Price and Stock

    Taiwan Semiconductor TSM3443CX6-RFG

    MOSFET P-CHANNEL 20V 4.7A SOT26
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    DigiKey TSM3443CX6-RFG Cut Tape 33,065 1
    • 1 $0.56
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    • 1000 $0.18068
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    TSM3443CX6-RFG Digi-Reel 33,065 1
    • 1 $0.56
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    TSM3443CX6-RFG Reel 27,000 3,000
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    Taiwan Semiconductor TSM3446CX6-RFG

    MOSFET N-CHANNEL 20V 5.3A SOT26
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    DigiKey TSM3446CX6-RFG Cut Tape 32,443 1
    • 1 $0.54
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    TSM3446CX6-RFG Digi-Reel 32,443 1
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    TSM3446CX6-RFG Reel 27,000 3,000
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    Taiwan Semiconductor TSM340N06CP-ROG

    MOSFET N-CHANNEL 60V 30A TO252
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    DigiKey TSM340N06CP-ROG Digi-Reel 16,981 1
    • 1 $0.88
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    TSM340N06CP-ROG Cut Tape 16,981 1
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    TSM340N06CP-ROG Reel 15,000 2,500
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    Taiwan Semiconductor TSM3401CX-RFG

    MOSFET P-CHANNEL 30V 3A SOT23
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    DigiKey TSM3401CX-RFG Cut Tape 1,414 1
    • 1 $0.8
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    TSM3401CX-RFG Digi-Reel 1,414 1
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    Marktech Optoelectronics MTSM3466SMR2-UR

    660NM 5.0X5.0 MM SMD DOME LENS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MTSM3466SMR2-UR Bag 9 1
    • 1 $40.54
    • 10 $32.618
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    TSM34 Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM3400 Taiwan Semiconductor 30v N-channel Enhancement Mode Mosfet Original PDF
    TSM3400CX Taiwan Semiconductor 30V N-Channel Enhancement Mode MOSFET Original PDF
    TSM3401 Taiwan Semiconductor 30v P-channel Enhancement Mode Mosfet Original PDF
    TSM3401CX Taiwan Semiconductor 30V P-Channel Enhancement Mode MOSFET Original PDF
    TSM3401CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 3A SOT23 Original PDF
    TSM3404CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 30V 5.8A SOT23 Original PDF
    TSM340N06CH X0G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 60V 30A TO251 Original PDF
    TSM340N06CI C0G Taiwan Semiconductor Manufacturing Company MOSFET N-CH 60V 30A ITO220 Original PDF
    TSM340N06CP ROG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 60V 30A TO252 Original PDF
    TSM340N06CZ C0G Taiwan Semiconductor Manufacturing Company MOSFET N-CH 60V 30A TO220 Original PDF
    TSM3424 Taiwan Semiconductor 30V N-Channel MOSFET Original PDF
    TSM3424CX6RF Taiwan Semiconductor 30V N-Channel MOSFET Original PDF
    TSM3433 Taiwan Semiconductor 20V P-Channel MOSFET Original PDF
    TSM3433CX6RF Taiwan Semiconductor 20V P-Channel MOSFET Original PDF
    TSM3441 Taiwan Semiconductor 20V P-Channel Enhancement-Mode MOSFET Original PDF
    TSM3441 Taiwan Semiconductor 20V P-Channel MOSFET Original PDF
    TSM3441 Taiwan Semiconductor 20V P-Channel MOSFET Original PDF
    TSM3441CX6 Taiwan Semiconductor 20V P-Channel Enhancement-Mode MOSFET Original PDF
    TSM3441CX6 Taiwan Semiconductor 20V P-Channel MOSFET Original PDF
    TSM3442 Taiwan Semiconductor 20v N-channel Enhancement Mode Mosfet Original PDF

    TSM34 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MARKING PA TR SOT-23

    Abstract: ultra low igss pA
    Text: TSM3408 60V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM3408 OT-23 TSM3408CX MARKING PA TR SOT-23 ultra low igss pA

    TSM3458

    Abstract: sot26 pa N-Channel mosfet sot-26
    Text: TSM3458 60V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 60 Features ID (A) 100 @ VGS = 10V 3.2 130 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3458 OT-26 TSM3458CX6 TSM3458 sot26 pa N-Channel mosfet sot-26

    N-CHANNEL MOSFET 30V 2A SOT-23

    Abstract: TSM3400 TSM3400CX
    Text: TSM3400 30V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 30V RDS on , Vgs @ 4.5V, Ids @ 2A =70mΩ RDS (on), Vgs @ 10V, Ids @ 3.5A =50mΩ Features  Rugged and reliable  Excellent thermal and electrical capabilities


    Original     		PDF TSM3400 OT-23 TSM3400CX OT-23 N-CHANNEL MOSFET 30V 2A SOT-23 TSM3400 TSM3400CX

    TSM3462

    Abstract: TSM3462CX6
    Text: TSM3462 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.0 40 @ VGS = 2.5V 4.5 51 @ VGS = 1.8V 4.0 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3462 OT-26 TSM3462CX6 TSM3462

    Untitled

    Abstract: No abstract text available
    Text: TSM3460 20V N-Channel MOSFET w/ESD Protected SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 22 @ VGS = 4.5V 6 40 @ VGS = 2.5V 5 60 @ VGS = 1.8V 2 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3460 OT-26 TSM3460CX6

    Untitled

    Abstract: No abstract text available
    Text: TSM3443 20V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDSON (mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3443 OT-26 TSM3443CX6

    N-CHANNEL MOSFET 30V 2A SOT-23

    Abstract: TSM3400 TSM3400CX
    Text: TSM3400 30V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 30V RDS on , Vgs @ 4.5V, Ids @ 2A =70mΩ RDS (on), Vgs @ 10V, Ids @ 3.5A =50mΩ Features — Rugged and reliable — Excellent thermal and electrical capabilities


    Original     		PDF TSM3400 OT-23 TSM3400CX OT-23 300uS, N-CHANNEL MOSFET 30V 2A SOT-23 TSM3400 TSM3400CX

    Untitled

    Abstract: No abstract text available
    Text: TSM3448 20V N-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 40 @ VGS = 4.5V 5 60 @ VGS = 2.5V 2.5 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3448 OT-26 TSM3448CX6

    P-Channel MOSFET code 1A

    Abstract: rf p-channel low ciss rf p-channel low ciss mosfet
    Text: TSM3409 60V P-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain -60 Features ID (A) 220 @ VGS = -10V -2.2 310 @ VGS = -4.5V -1.9 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance


    Original     		PDF TSM3409 OT-23 TSM3409CX P-Channel MOSFET code 1A rf p-channel low ciss rf p-channel low ciss mosfet

    MARKING D12

    Abstract: N-Channel mosfet sot-26
    Text: TSM3446 20V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3446 OT-26 TSM3446CX6 OT-26 MARKING D12 N-Channel mosfet sot-26

    marking pa sot-26

    Abstract: n-channel mosfet transistor ultra low igss pA TSM3446
    Text: TSM3446 20V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 20 Features ID (A) 33 @ VGS = 4.5V 5.3 40 @ VGS = 2.5V 4.4 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3446 OT-26 TSM3446CX6 marking pa sot-26 n-channel mosfet transistor ultra low igss pA TSM3446

    Untitled

    Abstract: No abstract text available
    Text: TSM3460 20V N-Channel MOSFET w/ESD Protected VDS = 20V Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on , Vgs @ 4.5V, Ids @ 6A =22mΩ (typ.) RDS (on), Vgs @ 2.5V, Ids @ 5A =40mΩ (typ.) RDS (on), Vgs @ 1.8V, Ids @ 2A =60mΩ (typ.)


    Original     		PDF TSM3460 TSM3460CX6 000/per OT-26 300uS, OT-26

    TSM3433

    Abstract: No abstract text available
    Text: TSM3433 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 42 @ VGS = -4.5V -5.6 57 @ VGS = -2.5V -4.8 80 @ VGS = -1.8V -1.4 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3433 OT-26 TSM3433CX6 TSM3433

    TSM3441

    Abstract: TSM3441CX6
    Text: TSM3441 -20V P-Channel Enhancement-Mode MOSFET SOT-26 Pin assignment: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source VDS = -20V RDS on , Vgs @ -4.5V, Ids @ -3A =100mΩ RDS (on), Vgs @ -2.5V, Ids @ -2.0A =150mΩ Block Diagram Features P-Channel MOSFET


    Original     		PDF TSM3441 OT-26 TSM3441CX6 000/per 300uS, OT-26 TSM3441 TSM3441CX6

    TSM3443

    Abstract: TSM3443CX6 P-Channel MOSFET code L 1A marking pa sot-26
    Text: TSM3443 20V P-Channel MOSFET PRODUCT SUMMARY VDS V RDS(on)(mΩ) SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 Features ID (A) 65 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Block Diagram ● Advance Trench Process Technology


    Original     		PDF TSM3443 OT-26 TSM3443CX6 TSM3443 P-Channel MOSFET code L 1A marking pa sot-26

    em 223

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM3441 20V P-Channel MOSFET b RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 654 P in D e fin itio n : 1. Drain 2. Drain 3. G ate V o s V ) 6. Drain 5, Drain 4 . Source R o W rn Q ) b (A ) 90 @ Vos = -4.5V -3.3 1 1 0 @ V gs = -2.5V -2.9


    OCR Scan     		PDF TSM3441 3441C em 223

    Untitled

    Abstract: No abstract text available
    Text: T A IW A N S E M IC O N D U C T O R s TSM3460 20V N-Channel MOSFET w/ESD Protected b RoHS CO M PLIANCE SOT-26 PRODUCT SUM M ARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 654 3. Gate V DS V) 4. Source 20 1 23 Features R o s iW m O ) Id ( A ) 22 @ Vos = 4 .5 V


    OCR Scan     		PDF TSM3460 OT-26 TSM3460CX6

    Untitled

    Abstract: No abstract text available
    Text: s TAIWAN SEMICONDUCTOR TSM3433 20V P-Channel MOSFET b RoHS C O M P L IA N C E PRODUCT SUM M ARY SOT-26 V DS V) P in D e fin itio n : 654 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features R D S(on)<m Û) Id (A) 42 @ V gs = -4.5V -5.6


    OCR Scan     		PDF TSM3433 OT-26 TSM3433CX6 OT-26

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channel MOSFET bl RoHS CO M PLIANCE SOT-26 65 4 PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source V ds {V 30 1 23 Features RDS on)(m£2) Id (A) 60 @ VGS= 10V 4.5 85 @ Vcs= 4.5V 3.6


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM3460 SEMICONDUCTOR 20V N-Channel MOSFET w/ESD Protected bl RoHS CO M PLIANCE SO T-26 PRODUCT SUM M ARY Pin Definition: 1. Drain e. Drain 2. Drain 5, Drain 654 3. G ate V DS V 4. S ou rce 20 1 23 Features R osanna) Id (A) 22 @ Vos = 4.5V 6 40 @ Vg* = 2.5V


    OCR Scan     		PDF TSM3460 TSM3460CX6 OT-26

    TSM3433

    Abstract: MARKING ato
    Text: E TAIWAN TSM3433 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 V DS (V) Pin D e fin itio n : 854 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -20 1 23 Features RDS(on)<mÛ) Id (A) 42 @ V GS = -4.5V


    OCR Scan     		PDF TSM3433 TSM3433CX6 OT-26 TSM3433 MARKING ato

    TSM3460CX6

    Abstract: 4300 MOSFET s54 mo TSM3460
    Text: E TAIWAN TSM3460 S E M IC O N D U C T O R 20V N-Channel MOSFET w/ESD Protected pb RoHS CO M PLIANCE PRODUCT SUMMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate V DS (V) 4. Source 20 1 23 Features R osanna) Id ( A ) 22 @ Vos = 4 .5 V 6 40 @ V g* = 2.5V


    OCR Scan     		PDF TSM3460 OT-26 TSM3460CX6 OT-26 4300 MOSFET s54 mo TSM3460

    BL SOT26

    Abstract: No abstract text available
    Text: TAIW AN s TSM3454 SEMICONDUCTOR 30V N-Channei MOSFET b RoHS COMPLIANCE SOT-26 654 PRODUCT SU MMARY Pin Definition: 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source Vos {V) Id RDS on)(m£2) (A) 60 @ VGS= 10V 4.5 85 @ Vos = 4 .5 V 3.6 30 1 23 Features


    OCR Scan     		PDF TSM3454 OT-26 TSM3454CX6 BL SOT26

    6.2Y

    Abstract: No abstract text available
    Text: T A IW A N TSM3462 % S E M IC O N D U C T O R pb: COMPLÌANCE RoHS 20V N-Channei MOSFET PRO DUCT S JM M A R Y S O T-26 654 P in D e fin itio n : V o s (V 1. Drain 6. Drain 2. Drain 5. Drain 3. Gate 4. Source 20 1 23 F ea tu res F W rfm Q ) Id ( A ) 3 3 @ V CS = 4.5V


    OCR Scan     		PDF TSM3462 3462C 6.2Y