Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.21E FLASH MEMORY CMOS 64 M 4M x 16 BIT MirrorFlashTM MBM29PL65LM 90/10 n DESCRIPTION The MBM29PL65LM is a 64M-bit, 3.0 V-only Flash memory organized as 4M words by 16 bits. The MBM29PL65LM is offered in a 48-pin TSOP(I). The device is designed to be programmed in-system with the
|
Original
|
PDF
|
MBM29PL65LM
64M-bit,
48-pin
F0210
|
marking code 4e
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.4E FLASH MEMORY CMOS 64 M 4M x 16 BIT MirrorFlashTM MBM29PL65LM 90/10 n DESCRIPTION The MBM29PL65LM is a 64M-bit, 3.0 V-only Flash memory organized as 4M words by 16 bits. The MBM29PL65LM is offered in a 48-pin TSOP(I). The device is designed to be programmed in-system with the
|
Original
|
PDF
|
MBM29PL65LM
64M-bit,
48-pin
F0212
marking code 4e
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.2E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM MBM29LV160TM/BM 90 n DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to
|
Original
|
PDF
|
MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM MBM29LV160TM/BM 90 n DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to
|
Original
|
PDF
|
MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
|
CSR2930800BA
Abstract: FPT-48P-M19
Text: Rev. 1.1 FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT CSR2930800BA-90 • DESCRIPTION The CSR2930800BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. TheCSR2930800BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA packages.
|
Original
|
PDF
|
8/512K
CSR2930800BA-90
CSR2930800BA
TheCSR2930800BA
48-pin
44-pin
48-ball
B48012S-c-3-3
FPT-48P-M19
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is
|
Original
|
PDF
|
DS05-20891-3E
MBM29DS163TE/BE
48-pin
48-ball
MBM29DS163TEthird
F0203
|
FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-4E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE10 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (1) and 48-ball FBGA packages. This device is
|
Original
|
PDF
|
DS05-20891-4E
MBM29DS163TE/BE10
MBM29DS163TE/BE
48-pin
48-ball
F0303
FPT-48P-M19
FPT-48P-M20
|
FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20891-3E FLASH MEMORY CMOS 16 M 2 M x 8/1 M × 16 BIT Dual Operation MBM29DS163TE/BE 10/12 • DESCRIPTION The MBM29DS163TE/BE is 16 M-bit, 1.8 V-only Flash memory organized as 2 M bytes of 8 bits each or 1 M words of 16 bits each. The device is offered in 48-pin TSOP (I) and 48-ball FBGA packages. This device is
|
Original
|
PDF
|
DS05-20891-3E
MBM29DS163TE/BE
48-pin
48-ball
MBM29DS163TE/BE
FPT-48P-M19
FPT-48P-M20
|
FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-1E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to
|
Original
|
PDF
|
DS05-20906-1E
MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
F0306
FPT-48P-M19
|
FPT-48P-M19
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20906-3E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM* MBM29LV160TM/BM 90 • DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(1) and 48-ball FBGA. The device is designed to
|
Original
|
PDF
|
DS05-20906-3E
MBM29LV160TM/BM
32M-bit,
48-pin
48-ball
F0312
FPT-48P-M19
|
SA9801
Abstract: 8A0000
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.4E FLASH MEMORY CMOS 128 M 16M x 8/8M × 16 BIT MirrorFlashTM MBM29PL12LM 10/12 n DESCRIPTION The MBM29PL12LM is a 128M-bit, 3.0 V-only Flash memory organized as 16M bytes by 8 bits or 8M words by 16 bits. The MBM29PL12LM is offered in 56-pin TSOP(I). The device is designed to be programmed in-system
|
Original
|
PDF
|
MBM29PL12LM
128M-bit,
56-pin
SA9801
8A0000
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.21E FLASH MEMORY CMOS 64 M 8M x 8/4M × 16 BIT MirrorFlashTM MBM29PL64LM 90/10 n DESCRIPTION The MBM29PL64LM is a 64M-bit, 3.0 V-only Flash memory organized as 8M bytes by 8 bits or 4M words by 16 bits. The MBM29PL64LM is offered in 48-pin and 56-pin TSOP(I). The device is designed to be programmed
|
Original
|
PDF
|
MBM29PL64LM
64M-bit,
48-pin
56-pin
F0210
|
Marking code vacc
Abstract: FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
|
Original
|
PDF
|
DS05-20892-3E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
F0206
Marking code vacc
FPT-48P-M19
FPT-48P-M20
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-3E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
|
Original
|
PDF
|
DS05-20892-3E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
|
|
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-1E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
|
Original
|
PDF
|
DS05-20892-1E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
MBM29PDD322TE/BE
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20892-2E FLASH MEMORY CMOS 32M 2M x 16 BIT Page Dual Operation MBM29PDD322TE/BE 90/12 • DESCRIPTION The MBM29PDD322TE/BE is 32M-bit, 2.5 V-only Flash memory organized as 2M words of 16 bits each. The device is offered in 48-pin TSOP(I) and 63-ball FBGA packages. This device is designed to be programmed in
|
Original
|
PDF
|
DS05-20892-2E
MBM29PDD322TE/BE
32M-bit,
48-pin
63-ball
F0203
|
FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20872-3E PAGE MODE FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29PL160TD/BD-75/90 • DESCRIPTION The MBM29PL160TD/BD is a 16 M-bit, 3.0 V-only Flash memory organized as 2 M bytes of 8 bits each or 1M words of 16 bits each. The MBM29PL160TD/BD is offered in a 48-pin TSOP (1), and 44-pin SOP packages. The
|
Original
|
PDF
|
DS05-20872-3E
MBM29PL160TD/BD-75/90
MBM29PL160TD/BD
48-pin
44-pin
MBM29PL160TD/160BD
F0306
FPT-48P-M19
FPT-48P-M20
|
MBM29F160BE-90
Abstract: MBM29F160BE90 FPT-48P-M19 FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-3E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE55/70/90 MBM29F160BE55/70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
|
Original
|
PDF
|
DS05-20879-3E
MBM29F160TE55/70/90
MBM29F160BE55/70/90
MBM29F160TE/BE
16M-bit,
48-pin
MBM29F160BE-90
MBM29F160BE90
FPT-48P-M19
FPT-48P-M20
|
Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20866-3E FLASH MEMORY CMOS 4 M 512 K x 8/256 K × 16 BIT MBM29DL400TC/BC-55/70/90 • DESCRIPTION The MBM29DL400TC/BC are a 4 M-bit, 3.0 V-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The MBM29DL400TC/BC are offered in a 48-pin TSOP (I) package. These devices are
|
Original
|
PDF
|
DS05-20866-3E
MBM29DL400TC/BC-55/70/90
MBM29DL400TC/BC
48-pin
F0105
|
SUPER CHIP
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-5E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(I), 44-pin SOP, and 48-ball FBGA
|
Original
|
PDF
|
DS05-20845-5E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
SUPER CHIP
|
FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20883-2E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29LV160TE/BE -70/90/12 • GENERAL DESCRIPTION The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 48-ball FBGA
|
Original
|
PDF
|
DS05-20883-2E
MBM29LV160TE/BE
16M-bit,
48-pin
48-ball
FPT-48P-M19
FPT-48P-M20
|
FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20879-5E FLASH MEMORY CMOS 16M 2M x 8/1M × 16 BIT MBM29F160TE70/90 MBM29F160BE70/90 • DESCRIPTION The MBM29F160TE/BE is a 16M-bit, 5.0 V-only Flash memory organized as 2M bytes of 8 bits each or 1M words of 16 bits each. The MBM29F160TE/BE is offered in a 48-pin TSOP (I) package. The device is designed to be
|
Original
|
PDF
|
DS05-20879-5E
MBM29F160TE70/90
MBM29F160BE70/90
MBM29F160TE/BE
16M-bit,
48-pin
F0207
FPT-48P-M19
FPT-48P-M20
|
FPT-48P-M19
Abstract: FPT-48P-M20
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20866-5E FLASH MEMORY CMOS 4 M 512 K x 8/256 K × 16 BIT MBM29DL400TC/BC-55/70/90 • DESCRIPTION The MBM29DL400TC/BC are a 4 M-bit, 3.0 V-only Flash memory organized as 512 Kbytes of 8 bits each or 256 Kwords of 16 bits each. The MBM29DL400TC/BC are offered in a 48-pin TSOP (I) package. These devices are
|
Original
|
PDF
|
DS05-20866-5E
MBM29DL400TC/BC-55/70/90
MBM29DL400TC/BC
48-pin
F0212
FPT-48P-M19
FPT-48P-M20
|
MBM29LV800TA-70PF
Abstract: FPT-48P-M19 FPT-48P-M20 MBM29LV800BA-70PFTN cost
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-6E FLASH MEMORY CMOS 8M 1M x 8/512K × 16 BIT MBM29LV800TA-70/-90/MBM29LV800BA-70/-90 • DESCRIPTION The MBM29LV800TA/BA are a 8M-bit, 3.0 V-only Flash memory organized as 1M bytes of 8 bits each or 512K words of 16 bits each. The MBM29LV800TA/BA are offered in a 48-pin TSOP(1), 44-pin SOP, and 48-ball FBGA
|
Original
|
PDF
|
DS05-20845-6E
8/512K
MBM29LV800TA-70/-90/MBM29LV800BA-70/-90
MBM29LV800TA/BA
48-pin
44-pin
48-ball
F0211
MBM29LV800TA-70PF
FPT-48P-M19
FPT-48P-M20
MBM29LV800BA-70PFTN cost
|
