Untitled
Abstract: No abstract text available
Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits
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IRLTS6342PbF
IRLTS6342TRPBF
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IRLTS6342TRPBF
Abstract: IRLTS6342 m4570 irlts6342tr irf5850
Text: PD - 97730 IRLTS6342PbF VDS VGS 30 ±12 V V RDS on max 17.5 mΩ (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) Qg (typical) ID (@TA = 25°C) 22.0 mΩ 11 nC 8.3 A HEXFET Power MOSFET D 1 6 D D 2 5 D G 3 4 S TSOP-6 Applications • System/Load Switch Features and Benefits
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IRLTS6342PbF
IRLTS6342TRPBF
D-020D
IRLTS6342TRPBF
IRLTS6342
m4570
irlts6342tr
irf5850
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Untitled
Abstract: No abstract text available
Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3456EV
2002/95/EC
AEC-Q101
SQ3456EV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ3481EV www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SQ3481EV
AEC-Q101
2002/95/EC
SQ3481EV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SQ3456EV
AEC-Q101
2002/95/EC
SQ3456EV-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQ3426EEV Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc
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SQ3426EEV
2002/95/EC
AEC-Q101
SQ3426EEV-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ3442EV Vishay Siliconix Automotive N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.055 RDS(on) () at VGS = 2.5 V 0.085 ID (A) 4.3 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21
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SQ3442EV
2002/95/EC
AEC-Q101
SQ3442EV-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQ3457EV Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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Original
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SQ3457EV
2002/95/EC
AEC-Q101
SQ3457EV-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQ3419EEV Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQ3419EEV
2002/95/EC
AEC-Q101
SQ3419EEV-T1-GE3
25hay
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: SQ3427EEV www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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SQ3427EEV
AEC-Q101
2002/95/EC
SQ3427EEV-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQ3418EEV Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedd
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SQ3418EEV
2002/95/EC
AEC-Q101
SQ3418EEV-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQ3426EEV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualifiedc
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Original
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SQ3426EEV
AEC-Q101
2002/95/EC
SQ3426EEV-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQ3460EV www.vishay.com Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 4.5 V 0.030 RDS(on) () at VGS = 2.5 V 0.034 RDS(on) () at VGS = 1.8 V 0.038 ID (A) 8 Configuration • Compliant to RoHS Directive 2002/95/EC
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SQ3460EV
AEC-Q101
2002/95/EC
SQ3460EV-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQ3481EV Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc
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SQ3481EV
2002/95/EC
AEC-Q101
SQ3481EV-T1-GE3
11-Mar-11
|
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Untitled
Abstract: No abstract text available
Text: SQ3457EV www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SQ3457EV
AEC-Q101
2002/95/EC
SQ3457EV-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: SQ3481EV www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SQ3481EV
AEC-Q101
2002/95/EC
SQ3481EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: SQ3456BEV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see
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SQ3456BEV
AEC-Q101
SQ3456BEV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: SQ3418EEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualifiedd
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Original
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PDF
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SQ3418EEV
AEC-Q101
2002/95/EC
SQ3418EEV-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: SQ3456BEV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) • 100 % Rg and UIS Tested • Material categorization: For definitions of compliance please see
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SQ3456BEV
AEC-Q101
SQ3456BEV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SQ3427
Abstract: SQ3427EEV-T1-GE3
Text: SQ3427EEV www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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SQ3427EEV
AEC-Q101
2002/95/EC
SQ3427EEV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQ3427
SQ3427EEV-T1-GE3
|
Untitled
Abstract: No abstract text available
Text: SQ3457EV www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC
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SQ3457EV
AEC-Q101
2002/95/EC
SQ3457EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
SQ3418
Abstract: No abstract text available
Text: SQ3418EEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualifiedd
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SQ3418EEV
AEC-Q101
2002/95/EC
SQ3418EEV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SQ3418
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marking code 46 tsop-6
Abstract: sQ3456ev
Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 30 RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew
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SQ3456EV
AEC-Q101
SQ3456EV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking code 46 tsop-6
sQ3456ev
|
Untitled
Abstract: No abstract text available
Text: SQ3427EEV www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested
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Original
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SQ3427EEV
AEC-Q101
2002/95/EC
SQ3427EEV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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