TSSOP8 PACKAGE K410 Search Results

TSSOP8 PACKAGE K410 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TPH9R00CQH		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N)
TPH9R00CQ5		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N)
TPH1R306PL		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N)
TPHR8504PL		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N)
TPH2R408QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance

TSSOP8 PACKAGE K410 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Datasheet −production data Features • ESD internal protection: 2 kV ■ Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated)	Original	LM158W-LM258W-LM358W	PDF
K418 Abstract: k415 TSSOP8 Package k410 3M Philippines Text: LM158W LM258W LM358W Low power dual operational amplifiers Datasheet − production data Features • ESD internal protection: 2 kV ■ Frequency compensation implemented internally ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz	Original	LM158W LM258W LM358W K418 k415 TSSOP8 Package k410 3M Philippines	PDF
Untitled Abstract: No abstract text available Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Datasheet −production data Features • ESD internal protection: 2 kV ■ Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated)	Original	LM158W-LM258W-LM358W	PDF
TSSOP8 Package k410 Abstract: No abstract text available Text: LM158W, LM258W, LM358W Low power dual operational amplifiers Datasheet - production data Features • ESD internal protection: 2 kV • Internal frequency compensation implemented • Large DC voltage gain: 100 dB N DIP8 Plastic package • Wide bandwidth (unity gain): 1.1 MHz	Original	LM158W, LM258W, LM358W DocID9159 TSSOP8 Package k410	PDF
transistor k413 Abstract: 258WY k414 K411 k412 k415 K-412 MSO8 LM258WYST TSSOP8 Package k410 Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Features • ESD internal protection: 2 kV ■ Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator	Original	LM158W-LM258W-LM358W transistor k413 258WY k414 K411 k412 k415 K-412 MSO8 LM258WYST TSSOP8 Package k410	PDF
LM258Y-LM358Y Abstract: 258WY AW 32 k413 diode LM158W-LM258W-LM358W Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Features • Internally frequency compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current/op (500 µA) essentially	Original	LM158W-LM258W-LM358W LM258Y-LM358Y 258WY AW 32 k413 diode LM158W-LM258W-LM358W	PDF
transistor k413 Abstract: K411 q001 TSSOP-8 K413 LM258AWYPT LM158W LM258W LM358AW LM358W LM258WY-LM358WY Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Features • Internally frequency compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator essentially independent of supply voltage	Original	LM158W-LM258W-LM358W transistor k413 K411 q001 TSSOP-8 K413 LM258AWYPT LM158W LM258W LM358AW LM358W LM258WY-LM358WY	PDF
258WY Abstract: K411 ic k411 q001 LM258AWYPT marking Q001 TSSOP8 Package k410 LM158W LM258W LM358AW Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Features • Internally frequency compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator essentially independent of supply voltage	Original	LM158W-LM258W-LM358W 258WY K411 ic k411 q001 LM258AWYPT marking Q001 TSSOP8 Package k410 LM158W LM258W LM358AW	PDF
LM2904AYD Abstract: 2904Y lm2904n LM2904AYDT 2904AY LM2904 LM2904A K403 k-410 K409 Text: LM2904 Low power dual operational amplifier Features • Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current/op (500 µA) essentially independent of supply voltage	Original	LM2904 LM2904AYD 2904Y lm2904n LM2904AYDT 2904AY LM2904 LM2904A K403 k-410 K409	PDF