FS300R12OE4P
Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in
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7555-T
Abstract: M1FM3
Text: Al t hough we ar e cons t ant l ymak i ng ev er yef f or tt oi mpr ov et he qual i t yand r el i abi l i t yofourpr oduct s ,t her enev er t hel es sr emai nsacer t ai npr obabi l i t yt hatt he s emi conduct orpr oduct smayoccas i onal l yf ai lormal f unct
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SM16G14
Abstract: SM16D14 j1n tr H-17 H-18 M16G45 SM16J45 WSM1
Text: 152- - TE * SM l 6 nD , Gj 14 • T T -IO 13-21 B IB 16A itî'i ^ Idrm ~rT 16D 14 SM S M 16G 14 fè # V tm l .VIS> Itsm 150 l2-l 110 /i R 16 ( 7V = 88° C ) ( 50H z , Max mA 1.4 12V II =200 III V V IV h 'itf-i-Kl A A 2S 50 12V II - 20Î I III 50 IV 50
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SM16D14
SM16G14
H-101
SM16G14
j1n tr
H-17
H-18
M16G45
SM16J45
WSM1
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QPB820S12
Abstract: QPB820S5
Text: OPTEK TECHNOLOGY INC ObE D g bTiäSflü D00D34b S | TRwV Optoelectronics Division T R W Electronic Components Group Product Bulletin 5328 January 1985 T - H M 3 Slotted Optical Switches Types 0PB82Q, QPB820S12, 0PB82QS7, 0PB82QS5 Features • Non-contact switching
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D00D34b
OPB820,
OPB820S12,
OPB820S7,
OPB820S5
0PB820,
0PB82
OPB820S5
QPB820S12
QPB820S5
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TC516540
Abstract: No abstract text available
Text: TO SHIBA THM72V1635ATG-4.-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAM IC RAM MODULE DESCRIPTION The THM72V1635ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5164405AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V1635ATG-4
216-WORD
72-BIT
THM72V1635ATG
TC5164405AFT
40-ns
TC516540
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TT 104 N 14 KOF
Abstract: SC2313
Text: O K I Semiconductor MSC23136B/BL-xxBS12/DS12 1,048,576-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23136B/BL-xxBS12/DS12 is a fully decoded 1,048,576-word x 36-bit CMOS Dynamic Ran dom Access Memory M odule composed of eight 4-Mb DRAMs in SOJ MSM514400B/BL packages and
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MSC23136B/BL-xxBS12/DS12
576-Word
36-Bit
MSC23136B/BL-xxBS12/DS12
MSM514400B/BL)
MSM511000B/BL)
72-pin
TT 104 N 14 KOF
SC2313
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501LT
Abstract: SG400W22 SG500FXF21 SG400EX22 SG400R22 SG400U22 3-60E3A
Text: - 77 - * S G 4 0 0 R, U, W, 3 + 3 V-, b£ <W < - •§" I rrm I drm ¡CRM ■ e * a $ ¿ti »j SG400R22 SG400U22 SG400W22 1300 | 1600 I tqrm 400 W d = V ¿ Vdrm, h RMS 150 i T /= 7 0 °C ) I tsm SG 40 0 EX2 2 I gfm P cravi /CR(RMS) P g HM Vg r m it V dm
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SG400
SG400R22
SG400U22
SG400W22
SG400EX22
125-C,
SG400U22
SG400W22
H-101
501LT
SG500FXF21
SG400EX22
3-60E3A
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TC5165805AFT
Abstract: No abstract text available
Text: TO SHIBA THM72V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V8015ATG-4f-5
608-WORD
72-BIT
THM72V8015ATG
TC5165805AFT
THL64VxxxxATG-xS
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THM72V8035ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8035ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5164805AFT DRAMs on a printed circuit board. This module is optimized for applications which,
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THM72V8035ATG-4
608-WORD
72-BIT
THM72V8035ATG
TC5164805AFT
40-ns
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T H LY 6 4 N 1 1A 7 0 f70Lf75f75Lf80f80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THLY64N11A is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716AFT/AFTL DRAMs on a printed circuit board.
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f70Lf75f75Lf80f80L
THLY64N11A
608-word
64-bit
TC59SM716AFT/AFTL
75/75L
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M7101
Abstract: No abstract text available
Text: TO SHIBA TH M 72V1615ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which
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72V1615ATG-4
216-WORD
72-BIT
THM72V1615ATG
TC5165405AFT
THL64VxxxxATG-xS
M7101
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E355D
Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20
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rgn354
Abstract: RGN2004 VCL11 Telefunken ecl11 ECL11 funkschau REN1004 RE074 ebl21 rgn 1064
Text: Preis 2.50 RM FUNKSCHAURöhrenaustauschtabelle Austausch deutscher Röhren untereinander Von Fritz Kunze Sonderdruck au s der FUNKSCHAU A usgabe 1944 FUNKSCHAU-VERLAG / MÜNCHEN 15 Austausch deutscher Röhren untereinander W eshalb eine neue Röhrenliste?
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diode E1110
Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t
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KC156A
Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Text: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:
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XapfaKOB-57,
KC156A
ky202e
K174XA2
KT809A
KT805A
KT610B
KP350A
KT808a
KT920A
KC213
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500 DKZ
Abstract: TFK 4 314 valvo TELEFUNKEN* U 111 B str w 6052 tfk 1007 tfk 014 Schwingquarz Telefunken TFK S 417 T valvo transistoren
Text: TELEPO RT VI ein Sprechfunkgerät für das 80-, 100- und 150/160-MHz-Band Kanalraster 50, 25 und 20 kHz Beschreibung A H /B s -V 300 657/1 Teile 1, 2, 3, 4, 5, 6 Nachdruck, auch auszugsweise, verboten 765 kn Mo Technische W eiterentwicklung Vorbehalten Inhalt
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150/160-MHz-Band
500 DKZ
TFK 4 314
valvo
TELEFUNKEN* U 111 B
str w 6052
tfk 1007
tfk 014
Schwingquarz Telefunken
TFK S 417 T
valvo transistoren
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UB8830D
Abstract: u125d UB8820M ub 8820 u880 UL7211D ub 8840 MC 4011 BCP U806D UB8840M
Text: in n flkän X □ n i Typenübersicht TkinOBOM 0D30p Fertigungsprogram m n pOH3BOACTBeHHaa nporpaMMa Das vorliegende H eft soll dem Zweck dienen, U e/ibto npeflCTaB/ieHHOM npocneKTa-TeipaAn AB/iaeTcs» einen Überblick über das Erzeugnissortim enten H a lb
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0D30p
R-5023
UB8830D
u125d
UB8820M
ub 8820
u880
UL7211D
ub 8840
MC 4011 BCP
U806D
UB8840M
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fm radio using cd 1619 CP ic circuit diagram
Abstract: PNA7509P TDA1517 equivalent TDA1541A S1 PNA7518P tda7052 equivalent TDA1011 equivalent TEA5570 TEA5570 equivalent mesa
Text: RADIO, A U D IO AND ASSOCIATED SYSTEMS BIPOLAR, MOS Part a page Selection guide Functional in d e x . Numerical in d e x .
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bauelemente DDR
Abstract: SPF 455 Teltow Mechanische Filter VEB Kombinat zf filter rft katalog SPF 10700 49004 SPF455 490.2159 Kombinat VEB Elektronische Bauelemente
Text: Passive elektronische Bauelemente O Widerstände Q Kondensatoren 0 Kinlaklfcaüelemenle 2 Suidererzeognisse Passive elektronische Bauelemente Auf allen G ebieten der Elektronik und Elektrotechnik werden an Leistungsfähigkeit, Lebensdauer und Zu verlässigkeit elektronischer Bauelemente ständig
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K155PE3
Abstract: K155TM2 k155py2 K155TM8 6e3p K155LI1 K155UE2 K155NA1 KM155TM2 K155TB1
Text: V/0 ELECTRONORGTECHNICA flflD D H ^366524 DD0DD3S 3 •USSR C E P M M M H T E rP A Jl b H b l X ' ^ M M K P O C X E M INTEGRATED M I C R O C I R C U IT S FAMILIES M H T e r p c p e A H a n b e r o H b i e m h K p o c x e r i b K155 KM155 i S b ic T p o A e iic T B iiJ i
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KM155
HM155
06ojHaqeHHe
38max
59max
K155PE3
K155TM2
k155py2
K155TM8
6e3p
K155LI1
K155UE2
K155NA1
KM155TM2
K155TB1
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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K511TB1
Abstract: K500TM133T k176kt1 KM155DA3 K155PE3 K500TM131M K511TB K155A K155Kn7 k589
Text: M H T E rP A il bH blE MMKPOCXEMbl IN T E G R A T E D M IC R O C IR C U IT S H acT b Part I I klH TETPA Jlb H b lE M M KPOCXEM bl U M O P O Bb lE IN TE G R A T ED D IGITAL M ICRO CIRCU ITS B c n e flC T B M e H e n p e p b iB H o r o c o B e p u u e H C T b o b 3 h h j i
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17max
25max
21max
59max
36max
K511TB1
K500TM133T
k176kt1
KM155DA3
K155PE3
K500TM131M
K511TB
K155A
K155Kn7
k589
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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