AT52BR1672T
Abstract: AT52BR1674T
Text: Features • 16-Mbit Flash and 2-Mbit/4-Mbit SRAM • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • •
|
Original
|
PDF
|
16-Mbit
66-ball
10/01/0M
AT52BR1672T
AT52BR1674T
|
AT52BR1672
Abstract: AT52BR1674
Text: Features • 16-Mbit Flash and 2-Mbit/4-Mbit SRAM • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • •
|
Original
|
PDF
|
16-Mbit
66-ball
2604B
AT52BR1672
AT52BR1674
|
1664t
Abstract: AT52BR1662T AT52BR1664T tba 790
Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
|
Original
|
PDF
|
16-megabit
11/01/xM
1664t
AT52BR1662T
AT52BR1664T
tba 790
|
Untitled
Abstract: No abstract text available
Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
|
Original
|
PDF
|
16-megabit
2212B
|
AT52BR1662
Abstract: No abstract text available
Text: Features • 16-megabit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 50 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
|
Original
|
PDF
|
16-megabit
2212C
AT52BR1662
|
AT52BR3244
Abstract: AT52BR3244T AT52BR3248 AT52BR3248T SA70
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • •
|
Original
|
PDF
|
32-Mbit
66-ball
2471B
08/01/xM
AT52BR3244
AT52BR3244T
AT52BR3248
AT52BR3248T
SA70
|
AT52BR3224
Abstract: AT52BR3244 AT52BR3244T AT52BR3248 AT52BR3248T
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85, 90, 110 ns • Sector Erase Architecture • • • • • • •
|
Original
|
PDF
|
32-Mbit
66-ball
2471E
AT52BR3224
AT52BR3244
AT52BR3244T
AT52BR3248
AT52BR3248T
|
AT52BR3244
Abstract: AT52BR3244T AT52BR3248 AT52BR3248T SA70
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • • • •
|
Original
|
PDF
|
32-Mbit
66-ball
2471C
09/01/xM
AT52BR3244
AT52BR3244T
AT52BR3248
AT52BR3248T
SA70
|
66c4
Abstract: No abstract text available
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85, 90, 110 ns • Sector Erase Architecture • • • • • • •
|
Original
|
PDF
|
32-Mbit
66-ball
2471D
66c4
|
AT52BR3224
Abstract: AT52BR3224T AT52BR3228 AT52BR3228T 3228-T
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 11 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 85 ns • Sector Erase Architecture • • • • • • •
|
Original
|
PDF
|
32-Mbit
66-ball
10/01/0M
AT52BR3224
AT52BR3224T
AT52BR3228
AT52BR3228T
3228-T
|
3361AS
Abstract: 3361a AT52BR1664A
Text: Features • 16-Mbit x16 Flash and 2-megabit/4-megabit SRAM • 2.7V to 3.3V Operating Voltage • Low Operating Power – 40 mA Operating Current (Maximum) – 35 µA Standby Current (Maximum) • Industrial Temperature Range Flash • 2.7V to 3.3V Read/Write
|
Original
|
PDF
|
16-Mbit
3361AS
3361a
AT52BR1664A
|
Untitled
Abstract: No abstract text available
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 70 ns • Sector Erase Architecture • • • • • • •
|
Original
|
PDF
|
32-Mbit
66-ball
3338B
|
AT52BR3224A
Abstract: AT52BR3224AT AT52BR3228A AT52BR3228AT
Text: Features • 32-Mbit Flash and 4-Mbit/8-Mbit SRAM • Single 66-ball 8 mm x 10 mm x 1.2 mm CBGA Package • 2.7V to 3.3V Operating Voltage Flash • 2.7V to 3.3V Read/Write • Access Time – 70 ns • Sector Erase Architecture • • • • • • •
|
Original
|
PDF
|
32-Mbit
66-ball
AT52BR3224A
AT52BR3224AT
AT52BR3228A
AT52BR3228AT
|
555 timer datasheet
Abstract: sine wave generator using ic 555 7555 low power timer ic IC 555 dark detector alarm using 555 timer 555 timer astable multivibrator ic 555 timer ic 555 timer astable multivibrator schmitt trigger using ic 555 555 timer
Text: by Tony van Roon Thank you Ron Harrison from Micron Technology, Inc. for pointing out the errors in this tutorial! The 555 timer IC was first introduced around 1971 by the Signetics Corporation as the SE555/NE555 and was called "The IC Time Machine" and was also the very first and only
|
Original
|
PDF
|
SE555/NE555
60sec.
referens\FAKTA\TUTORIALS\555\555
20Timer-Oscil.
555 timer datasheet
sine wave generator using ic 555
7555 low power timer ic
IC 555
dark detector alarm using 555 timer
555 timer astable multivibrator ic
555 timer ic
555 timer astable multivibrator
schmitt trigger using ic 555
555 timer
|
|
|
EN29F800
Abstract: No abstract text available
Text: EN29F800 EN29F800 8 Megabit 1024K x 8-bit / 512K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only FEATURES • 5.0V ± 10%, single power supply operation - Minimizes system level power requirements • Manufactured on 0.32 µm process technology
|
Original
|
PDF
|
EN29F800
1024K
16-bit)
200mA
EN29F800
|
EN29F800
Abstract: No abstract text available
Text: EN29F800 EN29F800 8 Megabit 1024K x 8-bit / 512K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 5.0 Volt-only FEATURES • 5.0V ± 10%, single power supply operation - Minimizes system level power requirements • Manufactured on 0.32 µm process technology
|
Original
|
PDF
|
EN29F800
1024K
16-bit)
200mA
EN29F800
|
Untitled
Abstract: No abstract text available
Text: EN29LV800 EN29LV800 da0. 8 Megabit 1024K x 8-bit / 512K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • Single power supply operation - Full voltage range: 2.7-3.6 volt read and write operations for battery-powered applications.
|
Original
|
PDF
|
EN29LV800
1024K
16-bit)
|
CH8391
Abstract: fs30j Generator control panel 1850 diagram CH8391V
Text: CH8391 CHRONTEL True-Color ChronDAC with 8-Bit Interface Features Description Three high speed 8-bit 110/135 M Hz DACs Three high speed 256 x 6-bit color palette RAMs Compatible with ATT20C490 / 491 / 492 display m odes M IX-COLOR : true on-the-fly mode switching
|
OCR Scan
|
PDF
|
CH8391
ATT20C490
CH8391Ã
0Q001Ã
fs30j
Generator control panel 1850 diagram
CH8391V
|
am29f040b
Abstract: No abstract text available
Text: AMD3 Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
|
OCR Scan
|
PDF
|
Am29F040B
Am29F040
|
am29f400bb
Abstract: H2TH am29f400bt AM29F400BT FLASH am29f400bb-55 AM29F400BB55
Text: AMDH Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Embedded Algorithms ■ Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements
|
OCR Scan
|
PDF
|
Am29F400B
8-Bit/256
16-Bit)
Am29F400
20-year
-55xx0)
am29f400bb
H2TH
am29f400bt
AM29F400BT FLASH
am29f400bb-55
AM29F400BB55
|
29f800bb
Abstract: IC 555 architecture 29f800bb55 29F800BB-55
Text: AMD3 Am29F800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29F800B
8-Bit/512
16-Bit)
Am29F800
29f800bb
IC 555 architecture
29f800bb55
29F800BB-55
|
am29f400b
Abstract: am29f400bb 22AB AM29F400BT
Text: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations
|
OCR Scan
|
PDF
|
Am29F400B
8-Bit/256
16-Bit)
Am29F400
am29f400bb
22AB
AM29F400BT
|
Untitled
Abstract: No abstract text available
Text: AM DH 5.0 Am29F200B V- o nl y 2 Megabit 256 K X 8-BK/128 K X 16-Blt CMOS 5.0 Volt-only, Boot Sector Flash Memory Flas DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
|
OCR Scan
|
PDF
|
Am29F200B
8-BK/128
16-Blt)
Am29F200A
20-year
|
Am29F080B reverse pinout
Abstract: SA10-SA11
Text: AM DH Am29F080B 8 Megabit 1 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.32 pm process technology
|
OCR Scan
|
PDF
|
Am29F080B
Am29F080
CS39S
20-year
Am29F080B reverse pinout
SA10-SA11
|
