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    TTL TRANSISTOR MODEL PARAMETER Search Results

    TTL TRANSISTOR MODEL PARAMETER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TTL TRANSISTOR MODEL PARAMETER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TTL TRANSISTOR MODEL PARAMETER

    Abstract: No abstract text available
    Text: F E AT U R E S MODEL NO. CHD019 4 0 9 - 10 MHz +30 dBm 3rd Order Intercept Point 16.5 dB Gain +13 dBm 0.1 dBm Compression in Thru State Integrated GaAs MMIC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers HDI Switch-Attenuator Amplifier HDMIC


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    PDF CHD019 TTL TRANSISTOR MODEL PARAMETER

    74ACxxx

    Abstract: mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25
    Text: AN1403/D FACT I/O Model Kit Prepared by: Willard Tu http://onsemi.com APPLICATION NOTE OBJECTIVE Transistor Parameters for Typical FACT Output Buffers The objective of providing a spice modelling kit is to allow the customer to perform system level interconnect


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    PDF AN1403/D 1599U 375E-4 875E-3 74ACxxx mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25

    k0304

    Abstract: K0204 N03m DIODE C06 15 k0203 26M transistor 473e K0607WB resistor 56E L05 diode
    Text: AND8010/D ECLinPS Lite MC100LVELT22 SPICE Model Kit Prepared by Paul Shockman http://onsemi.com APPLICATION NOTE ON Semiconductor Logic Applications Engineering Introduction The objective of this kit is to provide schematic and SPICE parameter information for performing system level


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    PDF AND8010/D MC100LVELT22 LVELT22" LVELT22 LVELT22 r14525 k0304 K0204 N03m DIODE C06 15 k0203 26M transistor 473e K0607WB resistor 56E L05 diode

    N03m

    Abstract: 794e k0203 N04m MC100LVELT22 motorola LOGIC L05 diode k0305 NE 544 spice model
    Text: AND8010/D  ECLinPS Lite MC100LVELT22 SPICE Model Kit Prepared by Paul Shockman http://onsemi.com APPLICATION NOTE Motorola Logic Applications Engineering Introduction The objective of this kit is to provide schematic and SPICE parameter information for performing system level


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    PDF AND8010/D MC100LVELT22 LVELT22" LVELT22 LVELT22 r14153 N03m 794e k0203 N04m MC100LVELT22 motorola LOGIC L05 diode k0305 NE 544 spice model

    m33 tf 130

    Abstract: BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645
    Text: Order this document by AN1400/D AN1400 Application Note MC10/100H640 Clock Driver Family I/O SPICE Modelling Kit Prepared by Todd Pearson Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect


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    PDF AN1400/D AN1400 MC10/100H640 MC10H600 MC10H640, MC10/100H64 m33 tf 130 BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645

    qt116

    Abstract: QT1T qt11 transistor TO5 Outline Dimensions
    Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


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    PDF 15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10K/10KH qt116 QT1T qt11 transistor TO5 Outline Dimensions

    54616B

    Abstract: No abstract text available
    Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


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    PDF 15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz 54616B

    transistor TO5 Outline Dimensions

    Abstract: TO-5 PACKAGE case for transistor
    Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


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    PDF 15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz transistor TO5 Outline Dimensions TO-5 PACKAGE case for transistor

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


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    PDF 15Vdc 045Hz 125MHz EAR99 M17677 125MHz MIL-PRF-55310/09 and/10 10kHz

    QT14

    Abstract: QT1T CLOCK GENERATOR 10HZ 1N4148 EAR99 MIL-PRF-55310 capacitor 9937 B1-26 transistor D 716 Q-Tech
    Text: TRANSISTOR OUTLINE PACKAGES TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz Q-TECH CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT


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    PDF 15Vdc 045Hz 125MHz EAR99 M17677 MIL-PRF-55310/09 and/10 10kHz QT14 QT1T CLOCK GENERATOR 10HZ 1N4148 EAR99 MIL-PRF-55310 capacitor 9937 B1-26 transistor D 716 Q-Tech

    K0204

    Abstract: k0304 N03C K0103 K0607 bv9 transistor k0203 K0102 K0507 N03R
    Text: AND8118/D EPT21/23/25 ECLinPS Plus Translator TTL output SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with


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    PDF AND8118/D EPT21/23/25 K0204 k0304 N03C K0103 K0607 bv9 transistor k0203 K0102 K0507 N03R

    Untitled

    Abstract: No abstract text available
    Text: USB1 Encoder Data Acquisition USB Device Page 1 of 6 Description The USB1 is no longer available for purchase, and has been replaced by our recently released USB4 Encoder Data Acquisition USB Device. The USB4 is a redesigned, enhanced version of the USB1, and is already


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    PDF PS-12

    nmos transistor 0.35 um

    Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
    Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power


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    PDF XHB06 XHB06 nmos transistor 0.35 um npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials

    BF100 transistor

    Abstract: XR-1489 CAP XR5 M-024 RC622 TTL TRANSISTOR MODEL PARAMETER ELT25 FQWN410 diode 431M npn TTL LOGIC pspice model
    Text: AN1596/D  ECLinPS Lite Translator ELT Family SPICE I/O Model Kit Prepared by Andrea Diermeier Cleon Petty Motorola Logic Applications Engineering http://onsemi.com APPLICATION NOTE Introduction The objective of this kit is to provide customers with enough schematic and SPICE parameter information to


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    PDF AN1596/D MC10ELT2xD MC100ELT2xD 100ELT2x 10ada r14153 BF100 transistor XR-1489 CAP XR5 M-024 RC622 TTL TRANSISTOR MODEL PARAMETER ELT25 FQWN410 diode 431M npn TTL LOGIC pspice model

    74xx76

    Abstract: TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32
    Text: Electronics Workbench TM Multisim 8 Simulation and Capture TM Component Reference Guide TitleShort-Hidden cross reference text May 2005 371587A-01 Support Worldwide Technical Support and Product Information ni.com National Instruments Corporate Headquarters


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    PDF 71587A-01 74xx76 TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


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    PDF GA10SICP12-247 O-247AB 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch


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    PDF GA20SICP12-263 O-263-7L) Applicatio0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    Untitled

    Abstract: No abstract text available
    Text: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


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    PDF GA10SICP12-263 O-263-7L) 427E-12 1373E-12 0E-03 GA10SICP12 55E-15 71739E-05 40E-10 00E-10

    Untitled

    Abstract: No abstract text available
    Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier


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    PDF GA20SICP12-247 O-247AB 0SICP12 GA20SICP12 833E-48 073E-26 752E-12 01E-09 50E-03

    MOS RM3

    Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


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    PDF XO035 XO035 35micron MOS RM3 mos rm3 data Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"

    LVC07A

    Abstract: LVC06A
    Text: LVC07A: Applications of an Open-Drain Hex Buffer SCEA012 April 1999 1 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest


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    PDF LVC07A: SCEA012 LVC07A LVC06A

    TTL TRANSISTOR MODEL PARAMETER

    Abstract: ebe switches CHD01940 model transistor 910
    Text: FEATURES • 9 - 1 0 M Hz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 J VET MODEL NO. CHD01940 Switch-Attenuator


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    PDF CHD01940 TTL TRANSISTOR MODEL PARAMETER ebe switches CHD01940 model transistor 910

    TTL TRANSISTOR MODEL PARAMETER

    Abstract: No abstract text available
    Text: FEATURES • 9 - 1 0 MHz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 38 J fcË f MODEL NO. CHD01940


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    PDF CHD01940 15VDCSUPW TTL TRANSISTOR MODEL PARAMETER

    Untitled

    Abstract: No abstract text available
    Text: FEA TU R ES JJ • 9 - 1 0 M Hz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers MODEL NO. CHD01940 XXI Switch-Attenuator


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    PDF CHD01940