TTL TRANSISTOR MODEL PARAMETER
Abstract: No abstract text available
Text: F E AT U R E S MODEL NO. CHD019 4 0 9 - 10 MHz +30 dBm 3rd Order Intercept Point 16.5 dB Gain +13 dBm 0.1 dBm Compression in Thru State Integrated GaAs MMIC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers HDI Switch-Attenuator Amplifier HDMIC
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CHD019
TTL TRANSISTOR MODEL PARAMETER
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74ACxxx
Abstract: mj04 AN1403 RSH120 MJ-04 AD259 NMOS MODEL PARAMETERS SPICE xj25
Text: AN1403/D FACT I/O Model Kit Prepared by: Willard Tu http://onsemi.com APPLICATION NOTE OBJECTIVE Transistor Parameters for Typical FACT Output Buffers The objective of providing a spice modelling kit is to allow the customer to perform system level interconnect
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AN1403/D
1599U
375E-4
875E-3
74ACxxx
mj04
AN1403
RSH120
MJ-04
AD259
NMOS MODEL PARAMETERS SPICE
xj25
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k0304
Abstract: K0204 N03m DIODE C06 15 k0203 26M transistor 473e K0607WB resistor 56E L05 diode
Text: AND8010/D ECLinPS Lite MC100LVELT22 SPICE Model Kit Prepared by Paul Shockman http://onsemi.com APPLICATION NOTE ON Semiconductor Logic Applications Engineering Introduction The objective of this kit is to provide schematic and SPICE parameter information for performing system level
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AND8010/D
MC100LVELT22
LVELT22"
LVELT22
LVELT22
r14525
k0304
K0204
N03m
DIODE C06 15
k0203
26M transistor
473e
K0607WB
resistor 56E
L05 diode
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N03m
Abstract: 794e k0203 N04m MC100LVELT22 motorola LOGIC L05 diode k0305 NE 544 spice model
Text: AND8010/D ECLinPS Lite MC100LVELT22 SPICE Model Kit Prepared by Paul Shockman http://onsemi.com APPLICATION NOTE Motorola Logic Applications Engineering Introduction The objective of this kit is to provide schematic and SPICE parameter information for performing system level
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AND8010/D
MC100LVELT22
LVELT22"
LVELT22
LVELT22
r14153
N03m
794e
k0203
N04m
MC100LVELT22
motorola LOGIC
L05 diode
k0305
NE 544 spice model
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m33 tf 130
Abstract: BF113 is373 GRS-003 GRS003 Mje 1533 1803e 203FF 1115 R1B H645
Text: Order this document by AN1400/D AN1400 Application Note MC10/100H640 Clock Driver Family I/O SPICE Modelling Kit Prepared by Todd Pearson Debbie Beckwith ECL Applications Engineering This application note provides the SPICE information necessary to accurately model system interconnect
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AN1400/D
AN1400
MC10/100H640
MC10H600
MC10H640,
MC10/100H64
m33 tf 130
BF113
is373
GRS-003
GRS003
Mje 1533
1803e
203FF
1115 R1B
H645
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qt116
Abstract: QT1T qt11 transistor TO5 Outline Dimensions
Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT
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15Vdc
045Hz
125MHz
EAR99
M17677
MIL-PRF-55310/09
and/10
10K/10KH
qt116
QT1T
qt11
transistor TO5 Outline Dimensions
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54616B
Abstract: No abstract text available
Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT
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15Vdc
045Hz
125MHz
EAR99
M17677
MIL-PRF-55310/09
and/10
10kHz
54616B
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transistor TO5 Outline Dimensions
Abstract: TO-5 PACKAGE case for transistor
Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT
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15Vdc
045Hz
125MHz
EAR99
M17677
MIL-PRF-55310/09
and/10
10kHz
transistor TO5 Outline Dimensions
TO-5 PACKAGE case for transistor
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR OUTLINE PACKAGES Q-TECH TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT
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15Vdc
045Hz
125MHz
EAR99
M17677
125MHz
MIL-PRF-55310/09
and/10
10kHz
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QT14
Abstract: QT1T CLOCK GENERATOR 10HZ 1N4148 EAR99 MIL-PRF-55310 capacitor 9937 B1-26 transistor D 716 Q-Tech
Text: TRANSISTOR OUTLINE PACKAGES TO-5 and TO-8 CRYSTAL CLOCK OSCILLATORS 1.8 to 15Vdc - 0.045Hz to 125MHz Q-TECH CORPORATION Description Q-Tech’s Transistor Outline package crystal oscillators consist of a source clock square wave generator, logic output buffers and/or logic divider stages, and a round AT
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15Vdc
045Hz
125MHz
EAR99
M17677
MIL-PRF-55310/09
and/10
10kHz
QT14
QT1T
CLOCK GENERATOR 10HZ
1N4148
EAR99
MIL-PRF-55310
capacitor 9937
B1-26
transistor D 716
Q-Tech
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K0204
Abstract: k0304 N03C K0103 K0607 bv9 transistor k0203 K0102 K0507 N03R
Text: AND8118/D EPT21/23/25 ECLinPS Plus Translator TTL output SPICE Modeling Kit Prepared by: Senad Lomigora, Paul Shockman ON Semiconductor Broadband Applications Engineering http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide customers with
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AND8118/D
EPT21/23/25
K0204
k0304
N03C
K0103
K0607
bv9 transistor
k0203
K0102
K0507
N03R
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Untitled
Abstract: No abstract text available
Text: USB1 Encoder Data Acquisition USB Device Page 1 of 6 Description The USB1 is no longer available for purchase, and has been replaced by our recently released USB4 Encoder Data Acquisition USB Device. The USB4 is a redesigned, enhanced version of the USB1, and is already
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PS-12
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nmos transistor 0.35 um
Abstract: npn pnp rf transistor bipolar cross reference l24c using a zener diode as a varicap NMOS depletion pspice model bsim3 model for 0.18 micron technology for hspice bsim3 model MOS RM3 QS 100 NPN Transistor analog devices transistor tutorials
Text: 0.6 µm BiCMOS Process Family XHB06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular HV BCD Technology Description The XHB06 is X-FAB's 0.6 Micron High-Voltage Bipolar CMOS DMOS BCD Technology, optimized for applications requiring operating voltages of 5V to 30V. Main target applications are power
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XHB06
XHB06
nmos transistor 0.35 um
npn pnp rf transistor bipolar cross reference
l24c
using a zener diode as a varicap
NMOS depletion pspice model
bsim3 model for 0.18 micron technology for hspice
bsim3 model
MOS RM3
QS 100 NPN Transistor
analog devices transistor tutorials
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BF100 transistor
Abstract: XR-1489 CAP XR5 M-024 RC622 TTL TRANSISTOR MODEL PARAMETER ELT25 FQWN410 diode 431M npn TTL LOGIC pspice model
Text: AN1596/D ECLinPS Lite Translator ELT Family SPICE I/O Model Kit Prepared by Andrea Diermeier Cleon Petty Motorola Logic Applications Engineering http://onsemi.com APPLICATION NOTE Introduction The objective of this kit is to provide customers with enough schematic and SPICE parameter information to
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AN1596/D
MC10ELT2xD
MC100ELT2xD
100ELT2x
10ada
r14153
BF100 transistor
XR-1489
CAP XR5
M-024
RC622
TTL TRANSISTOR MODEL PARAMETER
ELT25
FQWN410
diode 431M
npn TTL LOGIC pspice model
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74xx76
Abstract: TDA 7247 74XX174 triangle and square wave generator lm339 BA 658 Bar-Graph Display Driver 74xx161 DARLINGTON TRANSISTOR ARRAY ic str 6454 equivalent 74xx11 74XX32
Text: Electronics Workbench TM Multisim 8 Simulation and Capture TM Component Reference Guide TitleShort-Hidden cross reference text May 2005 371587A-01 Support Worldwide Technical Support and Product Information ni.com National Instruments Corporate Headquarters
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71587A-01
74xx76
TDA 7247
74XX174
triangle and square wave generator lm339
BA 658 Bar-Graph Display Driver
74xx161
DARLINGTON TRANSISTOR ARRAY
ic str 6454 equivalent
74xx11
74XX32
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Untitled
Abstract: No abstract text available
Text: GA10SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier
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GA10SICP12-247
O-247AB
427E-12
1373E-12
0E-03
GA10SICP12
55E-15
71739E-05
40E-10
00E-10
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Untitled
Abstract: No abstract text available
Text: GA20SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack VDS RDS ON ID (Tc = 25°C) ID (Tc = 145°C) hFE (Tc = 25°C) Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch
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GA20SICP12-263
O-263-7L)
Applicatio0SICP12
GA20SICP12
833E-48
073E-26
752E-12
01E-09
50E-03
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Untitled
Abstract: No abstract text available
Text: GA10SICP12-263 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier
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GA10SICP12-263
O-263-7L)
427E-12
1373E-12
0E-03
GA10SICP12
55E-15
71739E-05
40E-10
00E-10
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Untitled
Abstract: No abstract text available
Text: GA20SICP12-247 Silicon Carbide Junction Transistor/Schottky Diode Co-Pack Features Package • RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier
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GA20SICP12-247
O-247AB
0SICP12
GA20SICP12
833E-48
073E-26
752E-12
01E-09
50E-03
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MOS RM3
Abstract: mos rm3 data XO035 Silicon Image 1364 cmos transistor 0.35 um analog devices transistor tutorials "X-Fab" Core cell library 6E-08 opto mos application ESD "p-well" n-well"
Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing
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XO035
XO035
35micron
MOS RM3
mos rm3 data
Silicon Image 1364
cmos transistor 0.35 um
analog devices transistor tutorials
"X-Fab" Core cell library
6E-08
opto mos application
ESD "p-well" n-well"
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LVC07A
Abstract: LVC06A
Text: LVC07A: Applications of an Open-Drain Hex Buffer SCEA012 April 1999 1 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest
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LVC07A:
SCEA012
LVC07A
LVC06A
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TTL TRANSISTOR MODEL PARAMETER
Abstract: ebe switches CHD01940 model transistor 910
Text: FEATURES • 9 - 1 0 M Hz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 J VET MODEL NO. CHD01940 Switch-Attenuator
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CHD01940
TTL TRANSISTOR MODEL PARAMETER
ebe switches
CHD01940
model transistor 910
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TTL TRANSISTOR MODEL PARAMETER
Abstract: No abstract text available
Text: FEATURES • 9 - 1 0 MHz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers RF2 38 J fcË f MODEL NO. CHD01940
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CHD01940
15VDCSUPW
TTL TRANSISTOR MODEL PARAMETER
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Untitled
Abstract: No abstract text available
Text: FEA TU R ES JJ • 9 - 1 0 M Hz ■ +13 dBm 0.1 dBm Compression In Thru State ■ +30 dBm 3rd Order Intercept Point ■ 16.5 dB Gain ■ Integrated GaAs M M IC Switches, Attenuators, Silicon Transistor Amplifier, and TTL Drivers MODEL NO. CHD01940 XXI Switch-Attenuator
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CHD01940
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