HM6216514I
Abstract: HM6216514LTTI-5SL HM6216514LTTI-5
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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HM628100LTTI-5SL
Abstract: A17a
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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Hitachi DSA00164
Abstract: No abstract text available
Text: HM5216805 Series, HM5216405 Series 16 M LVTTL Interface SDRAM 100 MHz/83 MHz 1-Mword x 8-bit × 2-bank/2-Mword × 4-bit × 2-bank ADE-203-304E Z Rev. 5.0 November 1, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,
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HM5216805
HM5216405
Hz/83
ADE-203-304E
HM5216805/5216405-10H
HM5216805/5216405-10H)
HM5216805/5216405L-10H/10
Hitachi DSA00164
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HM6216255HI
Abstract: HM6216255HJPI HM6216255HJPI-12 HM6216255HJPI-15 HM6216255HTTI-12 HM6216255HTTI-15 Hitachi DSA0044
Text: HM6216255HI Series 4M high Speed SRAM 256-kword x 16-bit ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM6216255HI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high
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HM6216255HI
256-kword
16-bit)
ADE-203-1037A
256-k
16-bit.
400-mil
44-pin
HM6216255HJPI
HM6216255HJPI-12
HM6216255HJPI-15
HM6216255HTTI-12
HM6216255HTTI-15
Hitachi DSA0044
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HM62W16255HI
Abstract: HM62W16255HJPI HM62W16255HJPI-15 HM62W16255HTTI HM62W16255HTTI-15 Hitachi DSA0044
Text: HM62W16255HI Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-1038A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM62W16255HI is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
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HM62W16255HI
256-kword
16-bit)
ADE-203-1038A
16-bit.
400mil
44-pin
400-mil
HM62W16255HJPI
HM62W16255HJPI-15
HM62W16255HTTI
HM62W16255HTTI-15
Hitachi DSA0044
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HM62W16255H
Abstract: HM62W16255HJP-12 HM62W16255HJP-15 HM62W16255HLJP-12 HM62W16255HLJP-15 HM62W16255HLTT-12 HM62W16255HLTT-15 HM62W16255HTT-12 HM62W16255HTT-15 Hitachi DSA0044
Text: HM62W16255H Series 4M High Speed SRAM 256-kword x 16-bit ADE-203-751D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM62W16255H is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high
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HM62W16255H
256-kword
16-bit)
ADE-203-751D
16-bit.
400-mil
44-pin
HM62W16255HJP-12
HM62W16255HJP-15
HM62W16255HLJP-12
HM62W16255HLJP-15
HM62W16255HLTT-12
HM62W16255HLTT-15
HM62W16255HTT-12
HM62W16255HTT-15
Hitachi DSA0044
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HM6216255H
Abstract: HM6216255HJP-10 HM6216255HJP-12 HM6216255HJP-15 HM6216255HLJP-10 HM6216255HLJP-12 HM6216255HLJP-15 HM6216255HTT-10 HM6216255HTT-12 Hitachi DSA0044
Text: HM6216255H Series 4M high Speed SRAM 256-kword x 16-bit ADE-203-763D (Z) Rev. 1.0 Sept. 15, 1998 Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)
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HM6216255H
256-kword
16-bit)
ADE-203-763D
256-k
16-bit.
400-mil
44-pin
HM6216255HJP-10
HM6216255HJP-12
HM6216255HJP-15
HM6216255HLJP-10
HM6216255HLJP-12
HM6216255HLJP-15
HM6216255HTT-10
HM6216255HTT-12
Hitachi DSA0044
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Hitachi DSA00281
Abstract: HM6216514I Series
Text: HM6216514I Series Wide Temperature Range Version 8 M SRAM 512-kword x 16-bit ADE-203-1303A (Z) Preliminary Rev. 0.1 Feb. 25, 2002 Description The Hitachi HM6216514I Series is 8-Mbit static RAM organized 524,288-word × 16-bit. HM6216514I Series has realized higher density, higher performance and low power consumption by employing CMOS
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HM6216514I
512-kword
16-bit)
ADE-203-1303A
288-word
16-bit.
44-pin
requ30
Hitachi DSA00281
HM6216514I Series
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IC51-128
Abstract: transistor fpq 630 PC-68 TTP-48DF OF IC 7421 Enplas fpq Enplas PT740 AB am fm radio Hitachi DSAUTAZ005
Text: Hitachi Semiconductor Package Data Book Introduction Contents Section 1 Introduction of Packages 1.1 Types of Packages and Advantages 1.2 IC Package Name and Code Indication 1.3 Method of Indicating IC Package Dimensions 1.4 Lineups in Terms of Shapes and Materials
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Hitachi DSAUTAZ006
Abstract: No abstract text available
Text: HM62162514I Series Package Dimensions HM6216514LTTI Series TTP-44DE As of July, 2001 Unit: mm 18.41 18.81 Max 23 10.16 44 0.80 *0.27 ± 0.07 0.25 ± 0.05 22 0.80 0.13 M 11.76 ± 0.20 1.005 Max *Dimension including the plating thickness Base material dimension
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HM62162514I
HM6216514LTTI
TTP-44DE)
TTP-44DE
Hitachi DSAUTAZ006
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Hitachi DSAUTAZ006
Abstract: No abstract text available
Text: HM62V16514I Series Package Dimensions HM62V16514LTTI Series TTP-44DE As of July, 2001 Unit: mm 18.41 18.81 Max 23 10.16 44 0.80 *0.27 ± 0.07 0.25 ± 0.05 22 0.80 0.13 M 11.76 ± 0.20 1.005 Max *Dimension including the plating thickness Base material dimension
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HM62V16514I
HM62V16514LTTI
TTP-44DE)
TTP-44DE
Hitachi DSAUTAZ006
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HM6216255CTTI12
Abstract: No abstract text available
Text: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305A (Z) Rev. 1.0 Nov. 30, 2001 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed
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HM6216255HCI
256-kword
16-bit)
ADE-203-1305A
256-k
16-bit.
400-mil
44-pin
HM6216255CTTI12
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ADE-203-1303A
Abstract: HM6216514LTTI-5SL HM6216514LTTI-5 Hitachi DSAUTAZ006 HM6216514I Series
Text: HM6216514I Series Wide Temperature Range Version 8 M SRAM 512-kword x 16-bit ADE-203-1303A (Z) Preliminary Rev. 0.1 Feb. 25, 2002 Description The Hitachi HM6216514I Series is 8-Mbit static RAM organized 524,288-word × 16-bit. HM6216514I Series has realized higher density, higher performance and low power consumption by employing CMOS
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HM6216514I
512-kword
16-bit)
ADE-203-1303A
288-word
16-bit.
44-pin
ADE-203-1303A
HM6216514LTTI-5SL
HM6216514LTTI-5
Hitachi DSAUTAZ006
HM6216514I Series
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Untitled
Abstract: No abstract text available
Text: HM62W16255HI Series Ordering Information Type No. Access time Package HM62W16255HJPI-15 15 ns 400-mil 44-pin plastic SOJ CP-44D HM62W16255HTTI-15 15 ns 400-mil 44-pin plastic TSOPII (TTP-44DE) Pin Arrangement HM62W16255HJPI Series A0 A1 A2 A3 A4 CS I/O1
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HM62W16255HI
HM62W16255HJPI-15
HM62W16255HTTI-15
400-mil
44-pin
CP-44D)
TTP-44DE)
HM62W16255HJPI
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corrugated carton
Abstract: FP-32D package IC Packing and Labelling Specification
Text: Packing Specifications Contents 1. Forms of Package Packing 2. Moistureproof Packing 3. Taping for IC 4. Taping for IC Memorys Packing Specifications 1. Forms of Package Packing The forms of IC delivery include, as shown below, leaving the IC unsealed in a packing box and using
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TTP-28/24D
TTP-28DR
TTP-28DA
TTP-44/40DA
TTP-44/40DAR
TTP-44D
TTP-44DB
TTP-44DBR
TTP-44DE
TTP-32D
corrugated carton
FP-32D package
IC Packing and Labelling Specification
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HM6216255CJPI12
Abstract: HM6216255CTTI12 HM6216255HCJPI-12 HM6216255HCTTI-12 Hitachi DSA0047
Text: HM6216255HCI Series Wide Temperature Range Version 4M High Speed SRAM 256-kword x 16-bit ADE-203-1305B (Z) Rev. 2.0 Dec. 5, 2002 Description The HM6216255HCI Series is a 4-Mbit high speed static RAM organized 256-k word × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed
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HM6216255HCI
256-kword
16-bit)
ADE-203-1305B
256-k
16-bit.
400-mil
44-pin
HM6216255CJPI12
HM6216255CTTI12
HM6216255HCJPI-12
HM6216255HCTTI-12
Hitachi DSA0047
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Untitled
Abstract: No abstract text available
Text: HM6216255HI Series 4M high Speed SRAM 256-kword x 16-bit HITACHI ADE-203-1037A (Z) Rev. 1.0 Apr. 15, 1999 Description The HM6216255HI Series is a 4-M bit high speed static RAM organized 256-k word x 16-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high
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HM6216255HI
256-kword
16-bit)
ADE-203-1037A
256-k
16-bit.
400-mil
44-pin
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Untitled
Abstract: No abstract text available
Text: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith
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HM62W1664H
HM62W1864H
65536-word
16/18-bit
1664H
1864H
400-mil
44-pin
1664HJP-25
1664Hto
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Untitled
Abstract: No abstract text available
Text: PC/100 SDRAM HM5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary Rev. 0.1 Sep. 19, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM 5216805 Series,
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PC/100
HM5216805-A60,
HM5216405-A60
576-word
152-word
ADE-203-796
HM5216405
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HM5241
Abstract: No abstract text available
Text: HITACHI/ LOGIC/ARRAYS/MEM blE J> m 44Sb203 DG23fl71 b77 • H I T S HM 5216800 S e rie s HM 5416800 S e rie s Prelim inary 1,043,576-worû x 8-bit x 2-bank Synchronous Dynamic RAM 0 HITACHI AH inputs and outputs are referred to the rising edge o f the clo ck in p u t. T he H M 5216800
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44Sb203
DG23fl71
576-worû
Hz/80
--HM5416800
--HM5216800
44Tfc
S416800
HM521680Q,
54168Q0
HM5241
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Untitled
Abstract: No abstract text available
Text: HM5216805 Series, HM5216405 Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-304D Z Rev. 4.0 Jun. 12, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,
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HM5216805
HM5216405
576-word
152-word
ADE-203-304D
Hz/83
HM5216805/5216405-1
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Untitled
Abstract: No abstract text available
Text: HM5216808C Series HM5216408C Series 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM SSTL-3 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM (SSTL-3) HITACHI ADE-203-617 (Z) Preliminary Rev. 0.0 Jul. 10, 1996 Description A ll inputs and outputs are referred to the rising edge of the clock input. The HM5216808C Series,
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HM5216808C
HM5216408C
576-word
152-word
ADE-203-617
Hz/100
Hz/83
7777K\
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Untitled
Abstract: No abstract text available
Text: HM5216805-A60, HM5216405-A60 1,048,576-word x 8-bit x 2-bank Synchronous Dynamic RAM 2,097,152-word x 4-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-796 Z Preliminary, Rev. 0.0 Jun. 26, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series,
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HM5216805-A60,
HM5216405-A60
576-word
152-word
ADE-203-796
HM5216805
HM5216405
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HM51W16405
Abstract: No abstract text available
Text: Package Information There are four types of package for the Hitachi IC Memories, Plastic Mold DIP, CERDIP, Flat Package and Chip Carrier. Please select a suitable package in consideration o f your circumstance. When you use the package that has the material variation, please write down the package name in a form in
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DP-22N
DP-22NB
HM6287
HM6288
DP-24NC
DP-28
HM6208H
HM6207H
HM62256B
HM51W16405
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