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    TUNNEL DIODE OSCILLATOR Search Results

    TUNNEL DIODE OSCILLATOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    TUNNEL DIODE OSCILLATOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    oscillator tunnel diode

    Abstract: tunnel diode "tunnel diode" oscillator GaAs tunnel diode Gallium Arsenide tunnel diode back Tunnel diode "tunnel diode" tunnel diode oscillator tunnel diode GaAs "back diode"
    Text: CUSTOM COMPONENTS INC IflE D • 2570252 □□□□□ED 1 ■ x~e>*}~ II OSCILLATOR DIODES GALLIUM ARSENIDE rm RS GHz ohm s ohm s Min. (Typ.) (Typ.) fro Part Number ci Æ » 4515A 15 45 4 .76 4520A 20 45 5 .50 4525A 25 45 6 .36 4530A 30 45 7 .28 2515A


    OCR Scan     		23HR400BD oscillator tunnel diode tunnel diode "tunnel diode" oscillator GaAs tunnel diode Gallium Arsenide tunnel diode back Tunnel diode "tunnel diode" tunnel diode oscillator tunnel diode GaAs "back diode" PDF

    Tunnel diode

    Abstract: BD3 diode BD3 tunnel diode tunnel diodes BD3 diode BD3, "tunnel diode" 1N3712 tunnel diode specifications GE "TUNNEL DIODE" BD-406
    Text: BACK DIODES GENER AL PURPOSE F o r M ix e r s , D e te c to rs and S w itc h in g C irc u its GE Type’ Rever.'.e Voltage Min, Ip c Peak Point Current Max. mA Capacitance Max. (pF) t' - Ip = 90 .t 10 mV (mA) V r2 t mA (mV) V r, (n Jfi Forward max (mV) (a) V f ,


    OCR Scan     		TD251-256, 51A-256A, TD261/270 1N4090 1N3712 Tunnel diode BD3 diode BD3 tunnel diode tunnel diodes BD3 diode BD3, "tunnel diode" tunnel diode specifications GE "TUNNEL DIODE" BD-406 PDF

    TUNNEL DIODE

    Abstract: oscillator tunnel diode "tunnel diode" oscillator "tunnel diode" tunnel diode application TUNNEL DIODE spice model DATASHEET TUNNEL DIODE Design Guidelines for Quartz Crystal Oscillators negative resistance amplifier oscillator tunnel diode datasheet
    Text: Crystal Oscillator Design And Negative Resistance by Anthony M Scalpi, Cypress Semiconductor Timing is a critical part of almost every electronics application. Communication and data transfer generally require a reference signal or source to enable system synchronization


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    backward diode

    Abstract: tunnel diode General Electric "backward diode"
    Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a


    OCR Scan     		CT3508-1 backward diode tunnel diode General Electric "backward diode" PDF

    spice model Tunnel diode

    Abstract: dpsN TUNNEL DIODE spice model
    Text: 0.6 µm Process XT06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Trench Isolated SOI CMOS Technology Description The XT06 Series completes X-FAB's 0.6 Micron Modular Mixed Signal Technology. XT06 uses dielectric isolation on SOI wafers. This allows unrestricted 60 V high and low side operation


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    diode nomenclature

    Abstract: high frequency diode Low frequency power transistor "tunnel diode" oscillator "high frequency Diode"
    Text: Vishay Telefunken VI^UVY Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number B For example: Material W20 P Serial number Function The first letter indicates the material used for the active


    OCR Scan     		TLHR5401AS12. diode nomenclature high frequency diode Low frequency power transistor "tunnel diode" oscillator "high frequency Diode" PDF

    tunnel diode high frequency

    Abstract: diode tunnel transistor use in oscillator diode nomenclature DATASHEET TUNNEL DIODE photo thyristor thyristor regulator Low frequency power transistor oscillator tunnel diode transistor power
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		OT323 OT343 07-Jan-03 tunnel diode high frequency diode tunnel transistor use in oscillator diode nomenclature DATASHEET TUNNEL DIODE photo thyristor thyristor regulator Low frequency power transistor oscillator tunnel diode transistor power PDF

    9999 DIODE

    Abstract: high frequency diode Low frequency power transistor step recovery diode tunnel diode high frequency "high frequency Diode" diode tunnel transistor power audio
    Text: VISHAY Vishay Telefunken General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron I The part number of a semiconductor device consists of two letters followed by a serial number.


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    Low frequency power transistor

    Abstract: transistor 99 transistor power audio diode nomenclature bandgap
    Text: Tem ic Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of: Two letters followed by a serial number For example: B P W20 Material


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    transistor A 1013

    Abstract: high frequency diode Low frequency power transistor 9999 DIODE diode nomenclature "high frequency Diode"
    Text: Tem ic S e m i c o n d u c t o r s Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B


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    cd4024 applications

    Abstract: cd40245 hp1106a CT5602-2 "tunnel diode" oscillator HP1106 TD1107 "DC Drive" damp iris tunnel diode Design Considerations for Triggering of Flashlamp
    Text: Application Note 98 November 2004 Signal Sources, Conditioners and Power Circuitry Circuits of the Fall, 2004 Jim Williams Introduction Occasionally, we are tasked with designing circuitry for a specific purpose. The request may have customer origins or it may be an in-house requirement. Alternately, a circuit


    Original     		an98f AN98-27 AN98-28 cd4024 applications cd40245 hp1106a CT5602-2 "tunnel diode" oscillator HP1106 TD1107 "DC Drive" damp iris tunnel diode Design Considerations for Triggering of Flashlamp PDF

    GaAs tunnel diode

    Abstract: tunnel diode GaAs darlington transistor for audio power application photo thyristor diode tunnel DATASHEET TUNNEL DIODE Tunnel diode tunnel diode high frequency photocoupler Thyristor transistor power
    Text: Philips Semiconductors Pro Electron Type Numbering System General PRO ELECTRON TYPE NUMBERING SYSTEM U Basic type number W surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


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    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


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    6 pin TRANSISTOR SMD CODE 21

    Abstract: germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of two letters followed by a serial number For example: C Material


    Original     		21-Oct-03 CNY17F-2X017T 4N35-X016 BRT12H-X009T 6 pin TRANSISTOR SMD CODE 21 germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor PDF

    Conventions used in Presenting Technical Data

    Abstract: 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd
    Text: Conventions used in Presenting Technical Vishay Semiconductors Conventions used in Presenting Technical Data NOMENCLATURE FOR SEMICONDUCTOR DEVICES ACCORDING TO PRO ELECTRON The type number of semiconductor devices consists of two letters followed by a serial number.


    Original     		10-Sep-07 Conventions used in Presenting Technical Data 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd PDF

    transistor IR 9317

    Abstract: 84121 photo thyristor audio MAGNETIC HEAD MAGNETIC HEAD circuit audio oscillator tunnel diode 9315 DATASHEET TUNNEL DIODE MAGNETIC HEAD circuit oscillator tunnel diode datasheet
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		08-Jan-04 transistor IR 9317 84121 photo thyristor audio MAGNETIC HEAD MAGNETIC HEAD circuit audio oscillator tunnel diode 9315 DATASHEET TUNNEL DIODE MAGNETIC HEAD circuit oscillator tunnel diode datasheet PDF

    step recovery diode

    Abstract: No abstract text available
    Text: yv TYPE DESIGNATION PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits —, m ultiples o f such devices and semiconductor chips. "A lth o u g h not all type numbers accord w ith the Pro Electron system, the follow ing explanation is given


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    DIODE BZW70

    Abstract: Germanium Diode aa112 cqy17 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor thyristor smd AA112 germanium diode smd
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


    OCR Scan     		BZW10-15B. BYT-100 -100R. DIODE BZW70 Germanium Diode aa112 cqy17 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor thyristor smd AA112 germanium diode smd PDF

    BPW50

    Abstract: BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70
    Text: Philips Semiconductors General Pro electron type numbering PRO ELECTRON TYPE NUMBERING SYSTEM T Control or switching device; e.g. thyristor, low power; with special third letter U Transistor; power, switching W Surface acoustic wave device Basic type number


    OCR Scan     		the10. BPW50-6, BPW50-9, BPW50-12. BZW70-9V1 BZW10-15B. BLU80-24. BPW50 BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Semiconductors General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example:


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    oscillator tunnel diode

    Abstract: No abstract text available
    Text: Vishay Semiconductors General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. B For example:


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    BPW50

    Abstract: tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


    Original     		PCF1105WP: GMB74LS00A-DC: 74LS00A; TDA1000P: SAC2000: BPW50 tda1000 BD232 PHILIPS SEMICONDUCTOR cqy17 Germanium Diode aa112 GaAs tunnel diode BD232 BPW50-9 74LS00A DIODE BZW70 PDF

    Siemens tunnel diodes

    Abstract: Tunnel Diode SIEMENS thyristor
    Text: Technical Information Type designation in accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to inte­ grated circ u its -m u ltip le s of these components and sem iconductor chips. The number of the basic type consists of:


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    tda1000

    Abstract: TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Basic type number W Surface acoustic wave device X This type designation code applies to discrete semiconductor devices not integrated circuits , multiples of such devices, semiconductor chips and Darlington


    OCR Scan     		PCF1105WP: GMB74LS00A-DC; 74LS00A; TDA1000P: SAC2000: tda1000 TDA1000P 74LS00a Radiation Detector PCF1105 Germanium Diode aa112 PDF