tunnel diode
Abstract: 1N3718 Diode tunnel catalog "tunnel diode"
Text: 1N3718 General Purpose Tunnel Diode 39.00 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3718 Online Store 1N3718 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
|
Original
|
1N3718
1N3718
DO-17
com/1n3718
tunnel diode
Diode tunnel catalog
"tunnel diode"
|
PDF
|
1N3712
Abstract: Tunnel Diode tunnel diodes
Text: 1N3712 General Purpose Tunnel Diode 59.00 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3712 Online Store 1N3712 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
|
Original
|
1N3712
1N3712
DO-17
com/1n3712
Tunnel Diode
tunnel diodes
|
PDF
|
Tunnel diode
Abstract: 1N3713 tunnel diode 1N3713 Diode tunnel catalog 8598
Text: 1N3713 General Purpose Tunnel Diode 85.98 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3713 Online Store 1N3713 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
|
Original
|
1N3713
1N3713
com/1n3713
Tunnel diode
1N3713 tunnel diode
Diode tunnel catalog
8598
|
PDF
|
TUNNEL DIODE
Abstract: 1N3714 germanium TUNNEL DIODE tunnel diode specifications
Text: 1N3714 General Purpose Tunnel Diode 62.39 Diodes Tunnel Diodes General Purpose A. Page 1 of 1 Enter Your Part # Home Part Number: 1N3714 Online Store 1N3714 Diodes General Purpose Tunnel Diode Transistors Enter code INTER3 at checkout.* Integrated Circuits
|
Original
|
1N3714
1N3714
DO-17
com/1n3714
TUNNEL DIODE
germanium TUNNEL DIODE
tunnel diode specifications
|
PDF
|
back Tunnel diode
Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
|
Original
|
MIL-PRF-19500
MIL-PRF-35834
back Tunnel diode
mbd1057
DATASHEET TUNNEL DIODE
MBD2057-C18
MBD3057
"tunnel diode" chip assembly
Tunnel diode
MBD1057-E28
tunnel diode application
tunnel diodes
|
PDF
|
MBD5057
Abstract: No abstract text available
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
|
Original
|
MIL-PRF-19500
MIL-PRF-35834
MBD5057
|
PDF
|
"back diode"
Abstract: back Tunnel diode back diode tunnel diode specifications tunnel diodes Tunnel Diode
Text: ASTD1020 PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD1020 is a Tunnel Diodes Optimized for Operation as Back Diode Detector in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times
|
Original
|
ASTD1020
ASTD1020
ASTD1020-XX
"back diode"
back Tunnel diode
back diode
tunnel diode specifications
tunnel diodes
Tunnel Diode
|
PDF
|
DATASHEET TUNNEL DIODE
Abstract: "back diode" DIODE in 5060 ASTD-1020 PIN DIODE tunnel diode specifications diode 1020 package ASTD 2030 tunnel diode Tunnel diode ASTD-1020 ASTD-1020 detector
Text: ASTD SERIES PLANAR TUNNEL BACK DIODE DESCRIPTION: The ASTD Series of Tunnel Diodes are Optimized for Operation as Back Diode Detectors in Applications up to 18 GHz. PACKAGE STYLE 51 FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times
|
Original
|
|
PDF
|
back Tunnel diode
Abstract: "back diode" tunnel diodes tunnel diode specifications
Text: ASTD1020-00 PLANAR TUNNEL BACK DIODE DESCRIPTION: PACKAGE STYLE DIE FORM The ASTD1020-00 is a Tunnel Diodes Optimized for Operation as Back Diode Detector in Applications up to 18 GHz. FEATURES INCLUDE: • Excellent Temperature Stability • Fast Rise / Fall Times
|
Original
|
ASTD1020-00
ASTD1020-00
back Tunnel diode
"back diode"
tunnel diodes
tunnel diode specifications
|
PDF
|
diode e29
Abstract: Tunnel diode TU 21 V Q62701 tu 20 c tu 4 320 tunnel diodes
Text: TU 301,302,305/5,305/10,310/5,310/10,320/5,320/10 P-Germaniurri tunnel diodes Tunnel diodes of the series 301, 302, 305 and 310 are specially suitable for switching and triggering applications. They are built into coaxial ceramic microwave cases with band leads.
|
OCR Scan
|
Q62701
-H031SO
diode e29
Tunnel diode
TU 21 V
tu 20 c
tu 4 320
tunnel diodes
|
PDF
|
1N3716
Abstract: diode germanium tu 38 f 1N3717 1N3714 1N3712 IN3712 diode germanium tu 38 e 1n3719 1N3715 1N3713
Text: Germanium Power Devices Corp. 1N3712-20 1H3713-21 4 Tunnel Diodes Specifications IN3712 through 1N3720 and 1N3713 through 1N3721 are Germanium Tunnel Diodes offering peak currents of 1.0, 2.2, 4.7,10, and 22 ma. These devices, which make use of the quantum mechanical tunneling phenom
|
OCR Scan
|
1N3712-20
1H3713-21
IN3712
1N3720
1N3713
1N3721
1N37131N3721
1N3721
3S47375
000073S
1N3716
diode germanium tu 38 f
1N3717
1N3714
1N3712
diode germanium tu 38 e
1n3719
1N3715
|
PDF
|
Tunnel diode
Abstract: DIODE N20 tunnel diodes
Text: TU 410/5, 410/10 P-Germanium tunnel diodes Tunnel diodes of the series 410 are particularly designed for use as high-speed switching diodes for counting and triggering applications up into the GHz range. Built into coaxial ceramic microwave cases these diodes are available in 2 groups
|
OCR Scan
|
Q62701-E34
Q62701-E35
53-n-
Tunnel diode
DIODE N20
tunnel diodes
|
PDF
|
tunnel junction diode
Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Text: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.
|
OCR Scan
|
sufficient800
tunnel junction diode
tunnel diode high frequency
metal detectors circuit
"tunnel diode" chip assembly
Detectors - Diode
ml7700
TUNNEL DIODE
diode tunnel
|
PDF
|
tunnel diode
Abstract: AEY30C tunnel diodes AEY30D TUNNEL AEY30
Text: AEY 30 A, AEY 30 B, AEY 30 C, AEY30D P-Germanium tunnel diodes Tunnel diodes AEY 30 are specially designed fo r use as m icro -w a ve amplifiers. B uilt into coaxial ceramic m icrow ave cases the diodes are sorted according to capacitance and identified by the letters A , B, C or D. Each diode is supplied in a
|
OCR Scan
|
AEY30D
Q62701-E12
Q62701
Q62701-E14
Q62701-E21
tunnel diode
AEY30C
tunnel diodes
AEY30D
TUNNEL
AEY30
|
PDF
|
|
|
MP1301
Abstract: MP1104 MP1305 MP1451 mp-130 e180 MP1101 MP1452 MP1454 MP1300
Text: Microwave Tunnel Diodes ENVIRONMENTAL RATINGS Maximum Operating Temperature.-65 °C to +125°C Storage Temperature.-65 °C to +150°C Storage Temperature S1 Case.-65 °C to +125°C Electrical Specifications @ 25°C PART NUMBER
|
Original
|
MP1101
MP1100
MP1102
MP1103
MP1104
MP1105
MP1201
MP1200
MP1202
MP1203
MP1301
MP1104
MP1305
MP1451
mp-130
e180
MP1101
MP1452
MP1454
MP1300
|
PDF
|
MSPD2018
Abstract: m21 sot23 transistor MSPD1012-H50 MSPD1000-E50/E50SM mpn7620-et47 MSPD1012-E50 mpn7610 mbd1057 MMD0840 MPN7345
Text: Microwave Diodes Schottky Varactor PIN Step Recovery Planar Tunnel MOS / MIS Capacitors Short Form Catalog 2006 About Aeroflex / Metelics The Experience and Resources to Deliver the Technological Edge In many electronics applications, there is simply no margin for
|
Original
|
A17084
MSPD2018
m21 sot23 transistor
MSPD1012-H50
MSPD1000-E50/E50SM
mpn7620-et47
MSPD1012-E50
mpn7610
mbd1057
MMD0840
MPN7345
|
PDF
|
MP1601
Abstract: MP1303 MP1301
Text: M-Pulse Microwave Inc. 576 Charcot Ave. San Jose, Ca, 95131 Tel: 408 432-1480 Fax:(408) 432-1480 www.mpulsemw.com Tunnel Diodes Part Number MP1101 MP1100 MP1102 MP1103 MP1104 MP1105 MP1201 MP1200 MP1202 MP1203 MP1204 MP1205 MP1301 MP1300 MP1302 MP1303 MP1304
|
Original
|
MP1101
MP1100
MP1102
MP1103
MP1104
MP1105
MP1201
MP1200
MP1202
MP1203
MP1601
MP1303
MP1301
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 40574 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 50m Peak Curr. Tol.2.5m Total Cap. (F)12p Ip/Iv Min8.0 Vp80m Vv355m Fwd Volt @Ipeak Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)1.5 Neg Resist. Semiconductor MaterialGermanium
|
Original
|
Vp80m
Vv355m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N3857 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 5.0m Peak Curr. Tol.25m Total Cap. (F)8.0p Ip/Iv Min8.0 Vp70m Vv330m Fwd Volt @Ipeak525m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)3.0 Neg Resist. Semiconductor MaterialGermanium
|
Original
|
1N3857
Vp70m
Vv330m
Ipeak525m
StyleDO-25var
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N2929 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 1.0m Peak Curr. Tol.10m Total Cap. (F)150p Ip/Iv Min2.5 Vp80m Vv500m Fwd Volt @Ipeak700m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.0 Neg Resist. Semiconductor MaterialSilicon
|
Original
|
1N2929
Vp80m
Vv500m
Ipeak700m
StyleTO-18
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N3858 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 10m Peak Curr. Tol.50m Total Cap. (F)8.0p Ip/Iv Min8.0 Vp75m Vv350m Fwd Volt @Ipeak545m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.5 Neg Resist. Semiconductor MaterialGermanium
|
Original
|
1N3858
Vp75m
Vv350m
Ipeak545m
StyleDO-25var
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 10400BD Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 500u Peak Curr. Tol. Total Cap. (F).70p Ip/Iv Min Vp560 Vv Fwd Volt @Ipeak100m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)6.0 Neg Resist. Semiconductor MaterialGermanium
|
Original
|
10400BD
Vp560
Ipeak100m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 10450BD Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 500u Peak Curr. Tol. Total Cap. (F)1.0p Ip/Iv Min Vp560 Vv Fwd Volt @Ipeak80m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)5.0 Neg Resist. Semiconductor MaterialGermanium
|
Original
|
10450BD
Vp560
Ipeak80m
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 1N3854 Diodes General Purpose Tunnel Diode Military/High-RelN Ipeak Max. A 20m Peak Curr. Tol.1.0m Total Cap. (F)20p Ip/Iv Min8.0 Vp85m Vv365m Fwd Volt @Ipeak565m Resist. Cutoff Freq Series Induct. (H) R(series) (Ohms)2.0 Neg Resist. Semiconductor MaterialGermanium
|
Original
|
1N3854
Vp85m
Vv365m
Ipeak565m
StyleDO-25var
|
PDF
|
