back Tunnel diode
Abstract: mbd1057 DATASHEET TUNNEL DIODE MBD2057-C18 MBD3057 "tunnel diode" chip assembly Tunnel diode MBD1057-E28 tunnel diode application tunnel diodes
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
back Tunnel diode
mbd1057
DATASHEET TUNNEL DIODE
MBD2057-C18
MBD3057
"tunnel diode" chip assembly
Tunnel diode
MBD1057-E28
tunnel diode application
tunnel diodes
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MBD5057
Abstract: No abstract text available
Text: Planar Back Tunnel Diodes MBD Series Description Features The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to +110 °C. Unlike the standard tunnel diode IP is minimized
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MIL-PRF-19500
MIL-PRF-35834
MBD5057
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LXHL-LM5C
Abstract: Amicon luxeon 1 watt luxeon 1w LXHL-Lr5C luxeon 3 watt amicon adhesive kit AB05 LXHL-LB5C UV led diode 200 nm peak 1W
Text: power light source TM Luxeon V Star Technical Data DS30 Luxeon is a revolutionary, energy efficient and ultra compact new light source, combining the lifetime and reliability advantages of Light Emitting Diodes with the brightness of conventional lighting.
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luxeon 5 watt
Abstract: R-THETA Aluminum Base LED PCB luxeon 10 watt Custom Luxeon Design Guide luxeon 3 watt Luxeon 2002 thermal design AB05 luxeon drive
Text: application brief AB23 Thermal Design Considerations for Luxeon 5 Watt Power Light Sources Luxeon 5 Watt Power Light Sources generate about four times the power dissipation of Luxeon 1 Watt Power Light Sources, making effective thermal design especially
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anemometer
Abstract: distance measurement using camera based ir sensor high accuracy tunnel sensor hot wire anemometer ITS-90 Q206 U100 tunnel diode application TUNNEL DIODE
Text: Application Note 29 July 2009 PDF Name: thermal_characterization_process.pdf Thermal Characterization Process For Open-Frame Board Mounted Power Modules Contents Characteristics of Open-Frame Modules Preparation for Thermal Testing
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DPGAS3S09
Abstract: DPGAS1S09 laser diode 905nm optoelectronics perkinelmer DTS0305 1500-nm DPGAC1S
Text: P R E L I M I N A R Y SENSOR SOLUTIONS 905nm Epitaxial Double Cavity Multi-Quantum Well InGaAs Pulsed Laser Diode DPGA Series Overview This EPI-cavity structure possesses the same 25˚ beam divergence in the perpendicular direction as the PGA series product line, as well as
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905nm
DTS0305
DPGAS3S09
DPGAS1S09
laser diode 905nm
optoelectronics perkinelmer
DTS0305
1500-nm
DPGAC1S
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H31D
Abstract: MP4T243 MP42001 MP4T56800 MP4T6310 MP4T6325 MP4T6365 MP4T645 MP4T6825 MP4T856
Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
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tpgas1s09
Abstract: TPGAS1S03 TPGAS3S09 dpgas1s09 laser weapon TPGAS2S09 DPGAS3S09 AEL Crystals 43 series lidar ACC tunnel diode GaAs
Text: D A T A S H E 905 nm Multi Active Area Epitaxially Stacked Multi Quantum Well Strained E S E N S O R S O LUTI O N S Multi EPI-Cavity Lasers, DPGA & TPGA Series InGaAs Pulsed Epi-Cavity Laser Diodes T Comparison of the optical Near Field of Laser Diodes with one, two or three Epitaxial Layers.
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DTS0506P
tpgas1s09
TPGAS1S03
TPGAS3S09
dpgas1s09
laser weapon
TPGAS2S09
DPGAS3S09
AEL Crystals 43 series
lidar ACC
tunnel diode GaAs
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Loctite 3873
Abstract: SP944 amicon luxeon 1w AB05 Luxeon I Star LED LINE12 LOCTITE PASTE
Text: application brief AB05 Thermal Design Using Luxeon Power Light Sources Luxeon Power Light Sources provide the highest light output with the smallest footprint of any Light Emitting Diodes LEDs in the world. This is due, in part, to Luxeon’s ground breaking thermal design. Luxeon is the first LED solution to separate thermal
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June2002)
Loctite 3873
SP944
amicon
luxeon 1w
AB05
Luxeon I Star LED
LINE12
LOCTITE PASTE
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Amicon
Abstract: AB05 luxeon 1w EPO TEK epoxy Amicon die attach adhesive Custom Luxeon Design Guide Luxeon I Star LED E3503
Text: Application Brief AB05 Thermal Design Using LUXEON Power Light Sources Introduction LUXEON® Power Light Sources provide the highest light output with the smallest footprint of any Light Emitting Diodes LEDs in the world. This is due, in part, to LUXEON's ground breaking thermal design.
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Untitled
Abstract: No abstract text available
Text: D A T A S H E 905 nm Multi Active Area Epitaxially Stacked Multi Quantum Well Strained E S E N S O R S O LUTI O N S Multi EPI-Cavity Lasers, DPGA & TPGA Series InGaAs Pulsed Epi-Cavity Laser Diodes T Comparison of the optical Near Field of Laser Diodes with one, two or three Epitaxial Layers.
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sing5-2022
DTS0506P
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back Tunnel diode
Abstract: SCR WITH I-V CHARACTERISTICS tunnel diode
Text: GENERAL INFORMATION 1 Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal n-well process. It has been optimized for high-speed programmable logic devices,
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schematic diagram of energy saving device
Abstract: scr inverter schematic circuit Power INVERTER schematic circuit circuit diagram of energy saving device dc to ac inverter by scr SCR Inverter datasheet Tunnel diode schematic diagram of power inverter SCR gate Control IC back Tunnel diode
Text: Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which do not have the same density constraints of memory devices. The basic characteristics of the EE
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rca sot23-5
Abstract: mark EA SOT23-5 G38-87 MARK RCA SOT23-5 thermal resistance standards AN792 TC1047 TC1186 TC1410N MCP3208
Text: M AN792 A Method to Determine How Much Power a SOT23 Can Dissipate in an Application Author: Terry Cleveland Microchip Technology Inc. INTRODUCTION With the introduction of smaller surface mount SMT packages, it is becoming increasingly important to know their maximum power handling capability in specific applications. The power dissipation capability is
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AN792
SC70s,
D-81739
D-82152
DS00792A-page
rca sot23-5
mark EA SOT23-5
G38-87
MARK RCA SOT23-5
thermal resistance standards
AN792
TC1047
TC1186
TC1410N
MCP3208
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back Tunnel diode
Abstract: Tunnel Diode tunnel diode application
Text: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.
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BD400
Abstract: TD-429 1N3712 in3712 TD-427 TD-423 TD-437 TD-408 TD-401 TD-422
Text: TUNNEL DIODES MICROWAVE Cj :> Vp Vv Type’ Peak Current Typ. mA Peak Vo Itaiie Typ (mV) Valley Voltage Typ. (mV) V^ Forward Peak Voltage Typ. (mV) (Ip/lv) Peak to Valley Ratio Typ. —R Negative R e sista n ce Rs S e rie s R esista n ce Max. Junction C ap acitan ce
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TD-401
TD-402
TD-403
O-404
TD-405
TD-406
TD-407
TD-408
TD-409
TD-411
BD400
TD-429
1N3712
in3712
TD-427
TD-423
TD-437
TD-422
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tunnel junction diode
Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Text: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.
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sufficient800
tunnel junction diode
tunnel diode high frequency
metal detectors circuit
"tunnel diode" chip assembly
Detectors - Diode
ml7700
TUNNEL DIODE
diode tunnel
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back Tunnel diode
Abstract: "back diode" Germanium power DIODE tunnel MBD back diode
Text: METELICS 11E CORP D I b OS 1 35 2 0 0Ü Q 13 0 3 IRLANAR BACK TUNNEL DIODES i lo w freq u en cy Detector Series (To 2 GHz) FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth
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MIL-STD-19500
-65to+
17dBmCW
MBD-1050-C19
MBD-1050-A20
MBD-1050-T80
MBD-1050-T54
MBD-1050-H20
MBD-1050-E26
MBD-205s
back Tunnel diode
"back diode"
Germanium power
DIODE tunnel MBD
back diode
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backward diode
Abstract: tunnel diode General Electric "backward diode"
Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a
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CT3508-1
backward diode
tunnel diode General Electric
"backward diode"
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MBD3057-C18
Abstract: MBD2057-C18 DIODE e26 back Tunnel diode MBD1057
Text: JMAR BACK TUNNEL DIODES m «|h Frequency Detector Series (To 18 GHz) U L = FEATURES • • • • • Rugged Germanium Planar Construction Excellent Temperature Stability No DC Bias Required Wide Video Bandwidth MIL-STD-19500 & 883 Capability M AXIM UM RATINGS
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MIL-STD-19500
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54
MBD-2057-H20
MBD3057-C18
MBD2057-C18
DIODE e26
back Tunnel diode
MBD1057
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MBD3057-C18
Abstract: MBD5057-C18 back Tunnel diode MBD-3057-C18 MIL-STD-195 MBD5057 MBD2057-C18 MBD-1057-C18 MBD1057
Text: PLANAR BACK TUNNEL DIODES m T ^ High Frequency D e te c to r Series (To 18 GHz) IB = oti^ rationS FEATURES • Rugged Germanium Planar Construction • Excellent Temperature Stability • No DC Bias Required • Wide Video Bandwidth • MIL-STD-195 00 & 883 Capability
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MIL-STD-195
MBD-1057-C18
MBD-1057-T80
MBD-1057-T54
MBD-1057-H20
MBD-1057-E26
MBD-2057-C18
MBD-2057-T80
MBD-2057-T54temperature,
MBD3057-C18
MBD5057-C18
back Tunnel diode
MBD-3057-C18
MBD5057
MBD2057-C18
MBD1057
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MBD3057-C18
Abstract: back Tunnel diode
Text: PLANAR BACK TUNNEL DIODES IM ” High Frequency D e te cto r Series (To 18 GHz) [ P — o f I" cc?r to iw i ? n * FEATURES • • • • • R u g g e d G e rm a n iu m P la n a r C o n s tru c tio n E x c e lle n t T e m p e ra tu re S ta b ility N o D C Bias R e q u ire d
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MBD3057-C18
Abstract: MBD2057-C18 MBD-1057-C18 mbd1057-c18 MBD-2057-C18 back Tunnel diode mbd 1057 MBD-3057-C18 MBD-3057-H20 "back diode"
Text: ISPMAR BACK TUNNEL DIODES Iflgl i Frequency Detector Series (To 18 GHz) metelics ID CORPORATION FEATURES • • • • • R u g g e d G e rm a n iu m P lanar Construction Excellent T e m p e ra tu re Stability N o D C Bias R eq uired W id e V id e o B andw idth
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tunnel diodes
Abstract: germanium diode equivalent tunnel diode germanium TUNNEL DIODE germanium diode tunnel junction diode AEY16 AEY13 AEY15 germanium diode junction capacitance
Text: GERMANIUM T U N N EL DIODES AEYI3 AEYI5 AEYI6 TEN TA TIV E DATA Germanium tunnel diodes for use as low noise microwave am plifiers in S-band. QUICK REFERENCE DATA S-band f Operating frequency AEY13 AEY15 f min. r N s R esisitive cut-off frequency 6.0 8.0 Noise m easure
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AEY13
AEY15
AEY16
IB88331
AEY13-Page
tunnel diodes
germanium diode equivalent
tunnel diode
germanium TUNNEL DIODE
germanium diode
tunnel junction diode
AEY16
germanium diode junction capacitance
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