Angle sensor magnetoresistance
Abstract: SB-00-024 AAT001-10E TMR Sensor AAT001 nve magnetoresistance Tunneling Magnetoresistance Position Sensors
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available
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AAT001-10E
SB-00-024;
Angle sensor magnetoresistance
SB-00-024
TMR Sensor AAT001
nve magnetoresistance
Tunneling Magnetoresistance
Position Sensors
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nve magnetoresistance
Abstract: AAT001-10E position sensor SB-00-024 TMR Sensor AAT001 angle position sensors
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs Available
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AAT001-10E
SB-00-024;
nve magnetoresistance
position sensor
SB-00-024
TMR Sensor AAT001
angle position sensors
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Untitled
Abstract: No abstract text available
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection
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AAT001-10E
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Tunneling Magnetoresistance
Abstract: AAT001-10E
Text: Data Sheet AAT001-10E TMR Angle Sensor Key Features • Tunneling Magnetoresistance TMR Technology • Very High Output Signal Without Amplification • Wide Airgap Tolerance • Very High Resistance for Extremely Low Power • Sine and Cosine Outputs for Direction Detection
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AAT001-10E
Tunneling Magnetoresistance
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AG930-07
Abstract: AAT001-10E
Text: AG930-07E Angle Sensor Evaluation Kit SN12425A NVE Corporation 800 467-7141 sensor-apps@nve.com www.nve.com Kit Overview Evaluation Kit Features • AAT001-10E Angle Sensor • Part # 12426 Split-Pole Alnico 5 Round Horseshoe Magnet • Unity-Gain Buffer Amplifier
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AG930-07E
SN12425A
AAT001-10E
AG930-07
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gaussmeter
Abstract: Tunneling Magnetoresistance MR2A16A
Text: Technical Guide MRAM Overview Freescale’s magnetoresistive random access memory MRAM technology combines a magnetic device with standard silicon-based microelectronics to obtain the collective attributes of non-volatility, high-speed operation and unlimited read and write endurance, a
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MR2A16A
gaussmeter
Tunneling Magnetoresistance
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FLUXGATE
Abstract: search-coil GIANT "METAL DETECTOR" APS520 magnetodiode HS07 squid Magneto-inductive Displacement Sensors schematic inductive proximity sensor DE-710 Hall sensors Siemens
Text: A New Perspective on Magnetic Field Sensing Michael J. Caruso Tamara Bratland Honeywell, SSEC 12001 State Highway 55 Plymouth, MN 55441 Dr. Carl H. Smith Robert Schneider Nonvolatile Electronics, Inc. 11409 Valley View Road Eden Prairie, MN 55344 <www.ssec.honeywell.com>
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AN-201.
SP-1220,
FLUXGATE
search-coil
GIANT "METAL DETECTOR"
APS520
magnetodiode
HS07 squid
Magneto-inductive Displacement Sensors
schematic inductive proximity sensor
DE-710
Hall sensors Siemens
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Untitled
Abstract: No abstract text available
Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology n 150 nm Process n Total Dose Hardness 1x106 rad (Si) n Dose Rate Upset Hardness 1x109 rad(Si)/s
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HXNV0100
HXNV0100
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
ADS-14191
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HXNV01600
Abstract: No abstract text available
Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness 1x1010 rad(Si)/s Dose Rate Survivability 1x1012 rad(Si)/s Soft Error Rate ≤ 1x10-10 upsets/bit-day
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HXNV01600
1x106
1x1010
1x1012
1x10-10
1x1014
ADS-14229
HXNV01600
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honeywell mram
Abstract: silicon on insulator
Text: HMXNV0100 h HXNV0100 64K x 16 Non-Volatile Magnetic RAM Advanced Information The 64K x 16 radiation hardened low power nonvolatile Integrated Power Up and Power Down circuitry controls Magnetic RAM MRAM is a high performance 65,536 the condition of the device during power transitions.
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HMXNV0100
HXNV0100
16-bit
honeywell mram
silicon on insulator
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HXNV0100
Abstract: No abstract text available
Text: HXNV0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109
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HXNV0100
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
N61-0995-000-000
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HXNV01600
Abstract: No abstract text available
Text: HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features • ■ ■ PRODUCTION - Release Review - -17 28Jun Jun2014 201414:05:31 03:55:11MST MST- -Printed Printedon on26 18Jun Jul 2014 ■ ■ ■ ■ ■ Total Dose Hardness 1x106 rad Si Dose Rate Upset Hardness
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HXNV01600
1x106
1x1010
1x1012
1x10-10
1x1014
ADS-14229
HXNV01600
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HXNV0100
Abstract: Tunneling Magnetoresistance mram HXVN0100 MIL-PRF38535 S150 Department of Defense honeywell mram
Text: HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features • Fabricated on S150 Silicon On Insulator SOI CMOS Underlayer Technology ■ 150 nm Process (Leff = 130 nm) ■ Total Dose Hardness ≥ 1x106 rad (Si) ■ ■ ■ Dose Rate Upset Hardness ≥ 1x109
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HXVN0100
HXNV0100
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
N61-0995-000-000
Tunneling Magnetoresistance
mram
HXVN0100
MIL-PRF38535
S150
Department of Defense
honeywell mram
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY HXNV01600 16 Megabit Non-Volatile Magneto-Resistive RAM Features n Fabricated on S150 Silicon On n 150 nm Process Leff = 130 nm n Total Dose Hardness n Dose Rate Upset Hardness ≥ 1x109 rad(Si)/s Dose Rate Survivability ≥ 1x1012 rad(Si)/s
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HXNV01600
1x106
1x109
1x1012
1x10-10
1x1014
1x1015
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pure sine wave dimmer
Abstract: philips ingenuity ct transistor smd DAG heart beat sensor using led and ldr north american philips controls stepper motor CPLD Complex Programmable Logic Devices vhdl code for msk modulation fm transistor radio mini project ccga motorola biphase mark vhdl
Text: Analog Devices’ Glossary of Analog Terminology □ ANALOG DEVICES Analog Devices’ Glossary of Analog Terminology ANALOG DEVICES □ Words are included in this book on the basis of their usage. Words that are known to have current trademarks include appropriate
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10BASE-5
10BASE-T
16-bit
32-bit
48-bit
pure sine wave dimmer
philips ingenuity ct
transistor smd DAG
heart beat sensor using led and ldr
north american philips controls stepper motor
CPLD Complex Programmable Logic Devices
vhdl code for msk modulation
fm transistor radio mini project
ccga motorola
biphase mark vhdl
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