Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. FEATURES * Two MMBT9015 chips in an SMT package.
|
Original
|
MMBT9015
OT-26
QW-R215-003
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. FEATURES * Two chips in a SMT package EQUIVALENT CIRCUITS
|
Original
|
OT-26
QW-R215-003
|
PDF
|
transistor B 560
Abstract: QW-R215-003
Text: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. FEATURES * Two Chips in a SMT Package EQUIVALENT CIRCUITS
|
Original
|
OT-26
QW-R215-003
transistor B 560
|
PDF
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD IMT2A PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR DESCRIPTION The UTC IMT2A is a general purpose dual transistor within two chips in a SMT package. FEATURES * Two Chips in a SMT Package EQUIVALENT CIRCUITS
|
Original
|
OT-26
QW-R215-003
|
PDF
|
NPN Monolithic Transistor Pair
Abstract: Darlington pair IC darlington pair transistor NTE904
Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
|
Original
|
NTE904
NTE904
12-Lead
31-j1
NPN Monolithic Transistor Pair
Darlington pair IC
darlington pair transistor
|
PDF
|
Darlington pair IC
Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
Text: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington
|
Original
|
NTE904
NTE904
Darlington pair IC
darlington pair transistor
NPN Monolithic Transistor Pair
|
PDF
|
transistor marking N1
Abstract: RT1N141 RT3N11M
Text: RT3N11M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING RT3N11M is compound transistor built with two Unit：mm RT1N141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT3N11M
RT3N11M
RT1N141
SC-88
JEITASC-88
transistor marking N1
|
PDF
|
RT1P141
Abstract: RT3P11M
Text: RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P11M is compound transistor built with two RT1P141 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT3P11M
RT3P11M
RT1P141
SC-88
JEITASC-88
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RT3P77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P77M is compound transistor built with two RT1P140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT3P77M
RT3P77M
RT1P140
SC-88
JEITASC-88
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RT3PEEM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3PEEM is compound transistor built with two RT1P234 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT1P234
SC-88
JEITASC-88
|
PDF
|
RT3N22M
Abstract: RT1N241 RT1N* MARKING
Text: RT3N22M Compound Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N22M is compound transistor built with two RT1N241 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT3N22M
RT3N22M
RT1N241
SC-88
JEITASC-88
RT1N* MARKING
|
PDF
|
RT3P55M
Abstract: RT1P144
Text: RT3P55M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P55M is compound transistor built with two RT1P144 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT3P55M
RT3P55M
RT1P144
SC-88
JEITASC-88
|
PDF
|
RT3P66M
Abstract: No abstract text available
Text: PRELIMINARY RT3P66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3P66M is compound transistor built with two RT1P430 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT3P66M
RT3P66M
RT1P430
SC-88
JEITASC-88
|
PDF
|
2SC5938
Abstract: RT3C55M
Text: b RT3C55M Composite Transistor For Muting Application Silicon NPN Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3C55M is compound transistor built with two 2SC5938 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Each transistor elements are independent.
|
Original
|
RT3C55M
RT3C55M
2SC5938
SC-88
JEITASC-88
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Y RT3NFFM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3NFFM is compound transistor built with two RT1N431 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT1N431
SC-88
JEITASC-88
|
PDF
|
2SA1235A
Abstract: 100HZ transistor AMm
Text: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3AMMM is a composite transistor built with two Unit：mm 2.1 2SA1235A chips in SC-88 package. 2.0 Each transistor elements are independent.
|
Original
|
2SA1235A
SC-88
JEITASC-88
100HZ
transistor AMm
|
PDF
|
RT3N66M
Abstract: RT1N43
Text: PRELIMINARY RT3N66M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3N66M is compound transistor built with two RT1N430 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT3N66M
RT3N66M
RT1N430
SC-88
JEITASC-88
RT1N43
|
PDF
|
RT3N77M
Abstract: No abstract text available
Text: PRELIMINARY RT3N77M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3N77M is compound transistor built with two RT1N140 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT3N77M
RT3N77M
RT1N140
SC-88
JEITASC-88
|
PDF
|
2SC3052
Abstract: RT3CLLM
Text: PRELIMINARY RT3CLLM Compound Transistor For Low Frequency Amplify Application Silicon Npn Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3CLLM is a compound transistor built with two Unit：mm 2.1 2SC3052 chips in SC-88 package. 2.0 Each transistor elements are independent.
|
Original
|
2SC3052
SC-88
JEITASC-88
RT3CLLM
|
PDF
|
RT3PRRM
Abstract: No abstract text available
Text: PRELIMINARY RT3PRRM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3PRRM is compound transistor built with two RT1P440 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT1P440
SC-88
JEITASC-88
RT3PRRM
|
PDF
|
RT3N33M
Abstract: No abstract text available
Text: PRELIMINARY RT3N33M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3N33M is compound transistor built with two RT1N441 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent.
|
Original
|
RT3N33M
RT3N33M
RT1N441
SC-88
JEITASC-88
|
PDF
|
RT3Y97M
Abstract: muting
Text: RT3Y97M Composite Transistor For Muting Application DESCRIPTION OUTLINE DRAWING RT3Y97M is a composite transistor built with RT1P140 and Unit：mm two muting transistor with resistor in SC-88 package. FEATURE ・RT3Y97M is built in RTr1 side RT1P140,and RTr2,RTr3 side
|
Original
|
RT3Y97M
RT3Y97M
RT1P140
SC-88
JEITASC-88
muting
|
PDF
|
RT3P11M
Abstract: RT1P141
Text: RT3P11M Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3P11M is a composite transistor built with two Unit：mm 2.1 RT1P141 in SC-88 package. 2.0 Each transistor elements are independent. Mini package for easy mounting
|
Original
|
RT3P11M
RT3P11M
RT1P141
SC-88
JEITASC-88
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Power Bipolar Transistors „ Transistor Safe _Operating Area SOAR TRANSISTOR SAFE OPERATING AREA (SOAR) Average junction temperature There are two main limiting factors which affect the power handling ability of a transistor; the average
|
OCR Scan
|
|
PDF
|
