HB66A2568A25
Abstract: HB66A2568A
Text: HB66A2568A Series 262,144-word x 8-bit High Speed Static RAM Module The HB66A2568A is a high speed 256k × 8 Static RAM module, mounted 8 pieces of 256-kbit SRAM HM6207HJP sealed in SOJ package. An outline of the HB66A2568A is 60-pin zigzag inline package. Therefore, the HB66A2568A makes
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HB66A2568A
144-word
256-kbit
HM6207HJP)
60-pin
ns/35
HB66A2568A25
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ba508
Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary
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K5L5628JT
115-Ball
80x13
ba508
BA311
BA340
BA516
BA512
BA516 diode
BA339
BA379
BA295
ba473
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s29ws128n
Abstract: S71WS-Nx0 S29WS-N S71WS128NC0 S71WS256NC0 S71WS256ND0 S71WS512ND0 S71WS-N TSD084 UtRAM Density
Text: S71WS-Nx0 Based MCPs Stacked Multi-Chip Product MCP 128/256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with pSRAM Type 4 ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS-Nx0
32M/16M
S71WS-N
s29ws128n
S29WS-N
S71WS128NC0
S71WS256NC0
S71WS256ND0
S71WS512ND0
TSD084
UtRAM Density
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AS7C31026C
Abstract: AS7C31026C-12JIN 1026B AS7C31026C-12TIN AS7C31026C-12
Text: September 2006 Advance Information AS7C31026C 3.3 V 64K X 16 CMOS SRAM Features • Industrial -40o to 85oC temperature • Organization: 65,536 words x 16 bits • Center power and ground pins for low noise • High speed - 12 ns address access time
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AS7C31026C
44-pin
48-ball
I/O15
AS7C31026C
AS7C31026C-12JIN
1026B
AS7C31026C-12TIN
AS7C31026C-12
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Untitled
Abstract: No abstract text available
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-Chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Data Sheet Notice to Readers: This document states the current technical specifications
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S71WS512Nx0/S71WS256Nx0
32M/16M
16-Bit)
S71WS-N-01
S71WS-N-01
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71WS512ND
Abstract: 4136P
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128 Megabit (8M x 16-Bit) pSRAM Type 4 ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
71WS512ND
4136P
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Untitled
Abstract: No abstract text available
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
SRAM127
P4C1026
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P4C1026
Abstract: P4C1258
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
P4C1026
toler150
SRAM127
SRAM127
P4C1258
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Untitled
Abstract: No abstract text available
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
P4C1026
SRAM127
SRAM127
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Untitled
Abstract: No abstract text available
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
SRAM127
P4C1026
Oct-05
Aug-06
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Untitled
Abstract: No abstract text available
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
P4C1026
SRAM127
SRAM127
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cea h12
Abstract: IDT70P5258ML 5681
Text: IDT70P5258ML IDT70P525ML IDT70V525ML HIGH-SPEED 8K x 16 TriPort STATIC RAM Features ◆ ◆ ◆ High-speed access – Industrial: 55ns max. Low-power operation – IDT70P5258ML and IDT70P525ML Active: 54mW (typ.) Standby: 7.2µW (typ.) – IDT70V525ML Active: 450mW (typ.)
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IDT70P5258ML
IDT70P525ML
IDT70V525ML
IDT70P5258ML
450mW
IDT70P5258
144-ball
A11P2
cea h12
5681
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LZ23132
Abstract: H213 B 61 C7 electronic sensor twz c7 EDH1
Text: LZ23132 LZ23132 1/3 type Color CCD Area Sensor for NTSC DESCRIPTION FEATURES ● Number of pixels : 512 H x 492 (V) ● ● ● ● ● ● ● ● ● ✌✍ ✎ E ✎✎ ❑ PIN CONNECTIONS LZ23132 is a 1/3-type (6.0 mm) solid-state image sensor that consists of PN phote-diodes and
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LZ23132
16-PIN
LZ23132
H213
B 61 C7 electronic sensor
twz c7
EDH1
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o12p3
Abstract: cea h12
Text: IDT70P5258ML IDT70P525ML IDT70V525ML HIGH-SPEED 8K x 16 TriPort STATIC RAM Features ◆ ◆ ◆ High-speed access – Industrial: 55ns max. Low-power operation – IDT70P5258ML and IDT70P525ML Active: 54mW (typ.) Standby: 7.2µW (typ.) – IDT70V525ML Active: 450mW (typ.)
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IDT70P5258ML
IDT70P525ML
IDT70V525ML
IDT70V525ML
450mW
IDT70P5258
144-ball
A11P2
o12p3
cea h12
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O12P3
Abstract: No abstract text available
Text: IDT70P5258ML IDT70P525ML IDT70V525ML HIGH-SPEED 8K x 16 TriPort STATIC RAM Features ◆ ◆ ◆ High-speed access – Industrial: 55ns max. Low-power operation – IDT70P5258ML and IDT70P525ML Active: 54mW (typ.) Standby: 7.2µW (typ.) – IDT70V525ML Active: 450mW (typ.)
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IDT70P5258ML
IDT70P525ML
IDT70V525ML
IDT70V525ML
450mW
A11P2
IDT70P5258
144-ball
O12P3
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70V27
Abstract: A14L IDT70V27 IDT70V27S
Text: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM IDT70V27S/L Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/35ns (max.)
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IDT70V27S/L
15/20/25/35/55ns
20/35ns
IDT70V27S
500mW
IDT70V27L
IDT70V27
70V27
A14L
IDT70V27S
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/35ns (max.)
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IDT70V27S/L
15/20/25/35/55ns
20/35ns
IDT70V27S
500mW
IDT70V27L
IDT70V27
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IDT70V27PF
Abstract: BF144-1
Text: HIGH-SPEED 3.3V 32K x 16 DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed access – Commercial: 15/20/25/35/55ns max. – Industrial: 20/35ns (max.) Low-power operation
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IDT70V27S/L
15/20/25/35/55ns
20/35ns
IDT70V27S
500mW
IDT70V27L
IDT70V27
IDT70V27PF
BF144-1
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MB81C79
Abstract: mb81c79b-35
Text: October 1989 Edition 1.0 — FUJITSU D A TA S H EE T , MB81C79B-35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79B is a 8,192 words x 9 bits static random accasa memory
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MB81C79B-35/-45
72K-BIT
MB81C79B
500mV
MB81C79B-35
MB81C79B-45
28-LEAD
MB81C79
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UPD4361
Abstract: PD4361K-40
Text: NEC /¿PD4361 6 5 ,5 3 6 x 1-B IT STATIC CMOS RAM NEC Electronics Inc. Description Pin Configurations The ;uPD4361 is a 65,536-word by 1-bit static random access memory fabricated with advanced silicon-gate technology. Its unique circuitry, using C M O S peri
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uPD4361
536-word
the//PD4361
300-mil-wide,
22-pin
290-mil
490-mil,
PD4361
PD4361K-40
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MB81C79A
Abstract: MB81C79A-35 mb81c79 MB81C79A-45 N0-22 MB81C79A-45-W 3741B
Text: FUJITSU MICROELECTRONICS 47E D 3 7 4 T ? h 2 1 • T Ì 4 6 - 2 3 April 1990 Edition 3.0 FUjflSU DATA SHEET M B 8 1 C 79A -35/-45 CMOS 72K-BIT HIGH-SPEED SRAM 8K Words x 9 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C79A is a 8,192 words x 9 bits static random access memory
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72K-BIT
MB81C79A
LCC-32
32-PAD
LCC-32C
14ITYP
C32011S-3C
MB81C79A-35
mb81c79
MB81C79A-45
N0-22
MB81C79A-45-W
3741B
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Untitled
Abstract: No abstract text available
Text: NEC NEC Electronics Inc. //PD4362 16,384 X 4-BIT STATIC MIX-MOS RAM A p ril 1988 Pin Configuration Description The /L/PD4362 is a 16,384-word by 4-bit static RAM fabricated with a short-channel, siiicon-gate M ix-M O S process. Its unique circuitry, using N-channel memory
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//PD4362
/L/PD4362
384-word
PD4362
22-Pln
/PD4362
22-pin
EL-000398
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MB81C79
Abstract: No abstract text available
Text: October 1989 Edition 1.0 DATA SHEET fu J itsu = MB81C79B-35/-45 CMOS 72K-BIT HIGH SPEED SRAM 8192-WORDS x 9-BIT HIGH SPEED CMOS STATIC RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB81C79B is 8192words x 9bits static random access memory fabricated with a
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MB81C79B-35/-45
72K-BIT
8192-WORDS
MB81C79B
8192words
D28018S-2C
MB81C79B-35
MB81C79B-45
28-LEAD
MB81C79
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MB81C78A-35
Abstract: MB81C78A ICE 47E fujitsu 1988 IP-28P-M
Text: FUJITSU MICROELECTRONICS 47E D BTMTTbS 0G1B77S 0 « F M I /Z April 1990 Edition 3.0 DATA SHEET _ FUJITSU MB81C78A-35/-45 CMOS 64K-BIT HIGH-SPEED SRAM 8K Words x 8 Bits High-Speed CMOS Static Random Access Memory with Automatic Power Down The Fujitsu MB81C78A is a 8,192 words x 8 bits static random access memory
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0G1B77S
MB81C78A-35/-45
64K-BIT
MB81C78A
T-46-23-12
MB81C78A-35
MB81C78A-45
C-28P-
C28054S-1C
MB81C78A-35
ICE 47E
fujitsu 1988
IP-28P-M
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