SMD Transistor Y12
Abstract: transistor Common Base configuration g21 SMD Transistor SMD transistor y11 Y22 transistor smd smd transistors code book SMD Transistor Y22 "tunnel diode" oscillator SMD H21 applications of ujt
Text: Technical Information Type Designation in Accordance with Pro Electron 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips.
|
Original
|
|
PDF
|
1N4148WS-V
Abstract: No abstract text available
Text: 1N4148WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO-35 case with e3 the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148.
|
Original
|
1N4148WS-V
DO-35
1N4148,
LL4148,
OT-23
IMBD4148.
2002/95/EC
2002/96/EC
OD-323
1N4148WS-V
|
PDF
|
1N4148WS-V-GS08
Abstract: 1N4148WS-V 1N4148 sod 323 1n4148ws-v-gs18
Text: 1N4148WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO-35 case with e3 the type designation 1N4148, the MiniMELF case with the type designation LL4148, and the SOT-23 case with the type designation IMBD4148.
|
Original
|
1N4148WS-V
DO-35
1N4148,
LL4148,
OT-23
IMBD4148.
2002/95/EC
2002/96/EC
OD-323
1N4148WS-V
1N4148WS-V-GS08
1N4148 sod 323
1n4148ws-v-gs18
|
PDF
|
VISHAY 1N4148WS Rev
Abstract: SOD323 1N4148WS
Text: 1N4148WS-V Vishay Semiconductors Small Signal Fast Switching Diode Features • These diodes are also available in other case styles including the DO35 case with the type designation 1N4148, the Min- e3 iMELF case with the type designation LL4148, and the SOT23 case with the type designation IMBD4148.
|
Original
|
1N4148WS-V
1N4148,
LL4148,
IMBD4148.
2002/95/EC
2002/96/EC
OD323
GS18/10
GS08/3
1N4148WS-V
VISHAY 1N4148WS Rev
SOD323 1N4148WS
|
PDF
|
PIN photodiode 850 nm
Abstract: SMD CODE NM IR photodiode smd diode DH metal detectors circuit smd code 940 phototransistor 950 nm "IR Emitters" GaAlAs detector metal detector
Text: Type Designation Code Vishay Semiconductors Type Designation Code DETECTORS E T, V = Vishay Semiconductor Series F = Plastic filter M = SMD P = Plastic S = Side view Internal classification K = Side view mold Package varieties Detector Technology D = Photodiode
|
Original
|
17-Jun-08
nm/850
PIN photodiode 850 nm
SMD CODE NM
IR photodiode
smd diode DH
metal detectors circuit
smd code 940
phototransistor 950 nm
"IR Emitters"
GaAlAs detector
metal detector
|
PDF
|
Telefunken ir receiver 38
Abstract: TSOP infrared Telefunken ir receiver BS12 TSOP1736TB1 remote control receiver ir tv ir headphones Telefunken ir receiver 36 TELEFUNKEN tsop1736
Text: Vishay Telefunken Product Designation and Selection Type Designation Code: The key to understand the type name of the TSOP series: T S OP Vishay Telefunken Specials optional Semiconductors Optoelectronics Photomodules Packing varieties (optional) T = tube, BS12 = reel
|
Original
|
QS9000VDA6
Telefunken ir receiver 38
TSOP infrared
Telefunken ir receiver
BS12
TSOP1736TB1
remote control receiver ir tv
ir headphones
Telefunken ir receiver 36
TELEFUNKEN
tsop1736
|
PDF
|
TSOP 48 thermal resistance junction to case
Abstract: TSOP1236TB1
Text: VISHAY Vishay Semiconductors General Information Product Designation and Selection Type Designation Code: The key to understand the type name of the TSOP series: T S O P IR Receiver from Vishay Semiconductors 1= solder plated Lead configuration optional
|
Original
|
TSOP1236TB1
05-Aug-03
TSOP 48 thermal resistance junction to case
TSOP1236TB1
|
PDF
|
ABB power transformer
Abstract: No abstract text available
Text: Product introduction Medium voltage voltage transformer JDZ23-10 3/6 Type designation Type code Designation Net weight J Voltage transformer 27 kg D Single phase Z Cast epoxy resin 23 Design sequence 10(3/6) Rated voltage Technical data Type Rated transformation ratio (kV)
|
Original
|
JDZ23-10
JDZ23-3
JDZ23-6
JDZ23-10
ABB power transformer
|
PDF
|
UJT APPLICATION
Abstract: SMD Transistor Y12 "tunnel diode" oscillator SMD transistor y11 Y22 transistor smd SMD Transistor g22 y22c NF50 y-parameter Technical Explanations power transistor
Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.
|
Original
|
|
PDF
|
germanium diode smd
Abstract: "tunnel diode" oscillator SMD Transistor Y12 "Step Recovery Diode" NF50 Z2E diode Technical Explanations power transistor tunnel diode diode varactor B11 g21 SMD Transistor
Text: Technical Information 1 Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components – in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.
|
Original
|
|
PDF
|
MLT 22 005
Abstract: Positive Temperature Coefficient MLT 22 140 MLT 22 20 MARKING CODE MLt mlt 22 Mlt 04 MLT1400 MLT 22 6 R/mlt+2254+814
Text: SS-196 Melf Type Surface Mount Linear Positive Temperature Coefficient Resistors Type MLT 1. Scope This specification applies to melf type linear positive temperature coefficient resistors produced by KOA Corporation. 2. Type Designation The type designation shall be in the following form:
|
Original
|
SS-196
MLT 22 005
Positive Temperature Coefficient
MLT 22 140
MLT 22 20
MARKING CODE MLt
mlt 22
Mlt 04
MLT1400
MLT 22 6
R/mlt+2254+814
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product introduction Medium voltage voltage transformer JDZX22-10 3/6 C Type designation Type code Designation Net weight J Voltage transformer 22 kg D Single phase Z Cast epoxy resin X With residual voltage winding 22 Design sequence 10(3/6) Rated voltage
|
Original
|
JDZX22-10
JDZX22-3C
JDZX22-6C
JDZX22-10C
b4-03
|
PDF
|
HR 331K
Abstract: No abstract text available
Text: SS-195 R1 Power Chip Inductors Type LPC9040 1. Scope This specification shall be applied to the LPC9040 manufactured by KOA Corporation. 2. Type Designation The type designation shall be the following form: LPC 9040 TED 102 K Type Component Size Packaging
|
Original
|
SS-195
LPC9040
LPC9040
wire150
HR 331K
|
PDF
|
55199
Abstract: LPC4045TE101K
Text: SS-194 R1 Power Chip Inductors Type LPC4045 1. Scope This specification shall be applied to the LPC4045 manufactured by KOA Corporation. 2. Type Designation The type designation shall be the following form: LPC 4045 TED 150 K Type Component Size Packaging
|
Original
|
SS-194
LPC4045
LPC4045
55199
LPC4045TE101K
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: Product introduction Medium voltage voltage transformer JDZX22-10 3/6 C1G-A(N) Type designation Type code Designation Net weight J Voltage transformer 22 kg D Single phase Z Cast epoxy resin X With residual voltage winding 22 Design sequence 10(3/6) Rated voltage
|
Original
|
JDZX22-10
JDZX22-3C1G-A
JDZX22-3C1G-N
JDZX22-6C1G-A
JDZX22-6C1G-N
JDZX22-10C1G-A
JDZX22-10C1G-N
1YLA000122-Rev
|
PDF
|
Type Designation Code
Abstract: No abstract text available
Text: Type Designation Code www.vishay.com Vishay Semiconductors Type Designation Code DETECTORS E Series F = Plastic filter M = SMD P = Plastic S = Side view K = Side view mold T, V = Vishay Semiconductor Detector Package Design If leaded: 3 = 3 mm 4 = 4 mm 5 = 5 mm
|
Original
|
AEC-Q101
15-Sep-11
Type Designation Code
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product introduction Medium voltage voltage transformer JDZX22-10 3/6 C2G-A(N) Type designation Type code Designation Net weight J Voltage transformer 22 kg D Single phase Z Cast epoxy resin X With residual voltage winding 22 Design sequence 10(3/6) Rated voltage
|
Original
|
JDZX22-10
JDZX22-3C2G-A
JDZX22-3C2G-N
JDZX22-6C2G-A
JDZX22-6C2G-N
JDZX22-10C2G-A
JDZX22-10C2G-N
1YLA000124-Rev
|
PDF
|
tda1000
Abstract: TDA1000P
Text: Philips Com ponents Pro electron type designation code for integrated circuits TYPE DESIGNATION Basic type number THIRD LETTER This type designation applies to semiconductor monolithic, semiconductor multi-chip, thin film, thick- film and hybrid integrated circuits.
|
OCR Scan
|
GMB74LS00A-DC:
74LSS00A,
TDA1000P
SAC2000
PCF1105WP
tda1000
TDA1000P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LED Lamp Part Numbering System New LED type designation system The range of Siemens light emitting diodes has received new type designations and ordering codes. The new type designation now indicates the most im portant characteristics of an LED. LED type designation system
|
OCR Scan
|
OT-23
|
PDF
|
LU5351-JM
Abstract: S250-DO
Text: LED Lamp Part Numbering System New LED type designation system The range of Siemens light em itting diodes has received new type designations and ordering codes. The new type designation now indicates the most im portant characteristics of an LED. LED type designation system
|
OCR Scan
|
OT-23
LU5351-JM
S250-DO
|
PDF
|
BYX38-600
Abstract: germanium rectifier diode byx38 diode germanium varactor diode BYX38
Text: TYPE DESIGNATION J^ PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits — , multiples of such devices and semiconductor chips. "Although not all type numbers accord with the Pro Electron system, the following explanation is given
|
OCR Scan
|
BYX38-600
BZY93-C7V5
BYX38
BZY93
germanium rectifier diode
byx38 diode
germanium varactor diode
|
PDF
|
step recovery diode
Abstract: No abstract text available
Text: yv TYPE DESIGNATION PRO ELECTRON TYPE DESIGNATION CODE FOR SEMICONDUCTOR DEVICES This type designation code applies to discrete semiconductor devices — as opposed to integrated circuits —, m ultiples o f such devices and semiconductor chips. "A lth o u g h not all type numbers accord w ith the Pro Electron system, the follow ing explanation is given
|
OCR Scan
|
|
PDF
|
SIEMENS thyristor
Abstract: transistor smd AFE smd transistor G9
Text: SIEMENS 1 Technical Information Type Designation in Accordance with Pro Electron This type designation applies to small-signal semiconductor components - in contrast to integrated circuits, multiples of these components and semiconductor chips. The number of the basic type consists of: two letters and a three-digit code.
|
OCR Scan
|
|
PDF
|
ECKDNB222ME
Abstract: 560-2 LL2 nsb en132400 560-2 560-2 LL2 ECKDNB 560-2 ll2 y2 250 Type NS ceramic cap NS-B EN132400 ECKDNS472 ECK-DNS472ZV
Text: Panasonic Ceramic Disc Capacitors Type NS-B Ceramic Disc Capacitors for Safety Regulations (Type: NS-B/IEC384-14 2nd Ed. Sub-class Y2) Type: NS“B • Features • Type NS-B, which is a revised type designation from our previous type designation of NS for
|
OCR Scan
|
NS-B/IEC384-14
IEC38414
UL1414/250
IEC384-14,
ECKDNS103ME
ECKDNS472ZV
ECKDNS103ZV
ECKDNS223ZV
ECKDNB222ME
560-2 LL2 nsb
en132400 560-2
560-2 LL2
ECKDNB
560-2 ll2 y2 250
Type NS ceramic cap
NS-B EN132400
ECKDNS472
ECK-DNS472ZV
|
PDF
|
