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    TYPICAL 2N2222 NPN TRANSISTORS Search Results

    TYPICAL 2N2222 NPN TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TYPICAL 2N2222 NPN TRANSISTORS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n390g

    Abstract: 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor 2n2222 TPQ6502 2N3799 2N2906 NPN Transistor TPQ6700
    Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine N PN /PN P dual complementary pairs.


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    14-lead 2N3799 TPQ3906 TPQ6001 2N2221/2N2906 TPQ6002 2N2222/2N2907 TPQ6100 2N2483/2N3798 TPQ6100A 2n390g 2N390G TRANSISTOR TPQ3725 TPQ3724 2N2907 NPN Transistor 2n2222 TPQ6502 2N3799 2N2906 NPN Transistor TPQ6700 PDF

    2N2477

    Abstract: 2N2222 2N2219 transistor 2N2938 2N2221 2N2483 FF2221E FF2221J FF2222E FF2222J
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


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    FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J 2N2907A 2N2477 2N2222 2N2219 transistor 2N2938 2N2483 PDF

    typical 2n2222 npn transistors

    Abstract: 2N2475 2N2221 2N2222 2N2483 FF2221E FF2221J FF2222E FF2222J FF2483E
    Text: SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium


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    FF3725J FF2221E FF2221J 2N2221 FF2222E FF2222J 2N2222 FF2483E FF2483J MoulTO-18 typical 2n2222 npn transistors 2N2475 2N2222 2N2483 PDF

    PN 2n2222A

    Abstract: 3n2222 2N2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23
    Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


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    2N2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, PN2222A 2N2907, 2N2907A, PN2907Â PN 2n2222A 3n2222 2K2222 3N2222A 2N2222-PN2222 ST 2n2222 2K222 pn 2N22 VBB-23 PDF

    FN2222A

    Abstract: RT2222
    Text: 2N2222 PN 2 2 2 2 2N2222A PN2222A THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE FNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY.


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    2N2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, PN2222A 2N2907, 2N2907A, PN2907, FN2222A RT2222 PDF

    2N2222

    Abstract: FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222
    Text: THE 2N2222, 2N2222A, PN2222, PN2222A ARB NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE PNP TYPE 2N2907, 2N2907A, PN2907, PN2907A RESPECTIVELY. THE 2N2222, 2N2222A ARE PACKED IN TO-18.


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    2N2222 PN2222 2N2222A PN2222A 2N2222, 2N2222A, PN2222, 2N2907, 2N2907A, FN2222 2n2222 micro electronics pn2222 2n2222 FN2222A PN2222A le tr 2n2222 PN2907 T092 2N2222-PN2222 PDF

    itt 3906

    Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222
    Text: SPRflGUE "ZT SERIES TPQ QUAD TRAHSISTOR ARRAYS The Sprague Series TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent transistors. Shown are eight NPN types, Five PNP types, and nine NPN/PNP dual complementary pairs.


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    14-lead MC1439G MC1439P1 MC1741CG MC1741CP1 MC3003 MC3491P* MC7437L MC7438L MC75451P itt 3906 2n3904 TRANSISTOR REPLACEMENT GUIDE 2n2222 itt 741TC 2n3904, itt itt 3904 741CE 2N3799 MOTOROLA TRANSISTOR REPLACEMENT GUIDE itt 2n2222 PDF

    2N2222A motorola

    Abstract: 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222
    Text: MOTOROLA Order this document by 2N2219/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 2 BASE LAST SHIP 21/03/00 2N2219 2N2219A* 2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A


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    2N2219/D 2N2219 2N2219A* 2N2222 2N2222A* 2N2219A 2N2222A 2N2219 2N2222A motorola 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222 PDF

    NPN transistor 2n2222 beta value

    Abstract: 2N2222 transistor output curve B550 TRANSISTOR static characteristic for 2n2222 transistor 2N2907 NPN Transistor transistor k 2021 beta transistor 2N2222 2n2222 h parameter values 2N2222 transistor curve 2n2222 iv
    Text: EL2021C EL2021C Monolithic Pin Driver Features General Description  Wide range of programmable analog output levels  0 5 Ampere output drive with external transistors  Programmable Slew Rate  Low overshoot with large capacitive loads-stable with 500 pF


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    EL2021C EL2021 NPN transistor 2n2222 beta value 2N2222 transistor output curve B550 TRANSISTOR static characteristic for 2n2222 transistor 2N2907 NPN Transistor transistor k 2021 beta transistor 2N2222 2n2222 h parameter values 2N2222 transistor curve 2n2222 iv PDF

    2n2907 pnp

    Abstract: 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220 2N2221
    Text: Discrete Devices Transistors Cont. Medium Current, High-Speed Amplifiers Electrical Characteristics @ 25° C Maximum Ratings Type Polarity PD Ambient mW VCB VCE VEB Volts Volts Volts V cE(Sat) @ Ic/lß Min/Max mA Volts mA/mA ft MHz Min Max hfe @ ic Cob pF


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    2N721A 2N722A 2N1132A 2N1132B 2N2217 2N2218 2N2218A 2N2960 2N2961 2N3072 2n2907 pnp 2N2219 2N2219A 2N2220 2N2221 PDF

    2n2222 national semiconductor

    Abstract: national 2n2222 2n2222 npn transistor 2N2222 NPN Transistor features 2N2222 transistor Remote Controlled Fan Regulator application 2n2222 2N2222 circuit Datasheet 2N2222 transistor temperature controlled fan regulator
    Text: 204014_App.Brief#114.qxd 5/15/02 9:22 AM Page 1 Application Brief Autonomous Fan Control For Processor Systems Using The LM85 Application Brief 114 Emmy Denton A system error can be determined by polling the LM85’s status registers. The LM85 includes high and low-limit


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    com/pf/LM/LM85 2n2222 national semiconductor national 2n2222 2n2222 npn transistor 2N2222 NPN Transistor features 2N2222 transistor Remote Controlled Fan Regulator application 2n2222 2N2222 circuit Datasheet 2N2222 transistor temperature controlled fan regulator PDF

    NPN transistor 2n2222 beta value

    Abstract: je200 beta transistor 2N2222 JE210 2N2222 transistor output curve 2n2222 h parameter values beta 2N2222
    Text: EL2021C F eatu res G en eral D escrip tion • Wide range of programmable analog output levels • 0.5 Ampere output drive with external transistors • Programmable Slew Rate • Low overshoot with large capacitive loads-stable with 500 pF • 3-state output


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    EL2021C EL2021 NPN transistor 2n2222 beta value je200 beta transistor 2N2222 JE210 2N2222 transistor output curve 2n2222 h parameter values beta 2N2222 PDF

    2N2219 transistor substitute

    Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007 PDF

    NPN transistor 2n2222 beta value

    Abstract: 2N2222 transistor output curve 2N2222 curve beta transistor 2N2222 2n2222 transistor pin b c e MJE210 2n2222 h parameter values
    Text: HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2021C Monolithic Pin Driver F e a tu r e s G en era l D e sc r ip tio n • Wide range of programmable analog output levels • 0.5 Ampere output drive with external transistors • Programmable Slew Rate • Low overshoot with large


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    EL2021C EL2021C EL2021 EL2021, NPN transistor 2n2222 beta value 2N2222 transistor output curve 2N2222 curve beta transistor 2N2222 2n2222 transistor pin b c e MJE210 2n2222 h parameter values PDF

    2N2222 transistor output curve

    Abstract: beta transistor 2N2222 2n2222 transistor pin b c e "PNP Transistor" 2n2222 2N2222 curve
    Text: EL2021C F e a tu r e s G e n e ra l D e sc r ip tio n • Wide range of programmable analog output levels • 0.5 Ampere output drive with external transistors • Programmable Slew Rate • Low overshoot with large capacitive loads-stable with 500 pF • 3-state output


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    EL2021C EL2021 2N2222 transistor output curve beta transistor 2N2222 2n2222 transistor pin b c e "PNP Transistor" 2n2222 2N2222 curve PDF

    by205

    Abstract: BY205-400
    Text: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature


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    TIPL765, TIPL765A OT-93 TIPL765 TCP765AH SAP765AB by205 BY205-400 PDF

    TIPL760

    Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760A
    Text: TIPL760, TIPL760A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 75 W at 25°C Case Temperature


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    TIPL760, TIPL760A O-220 TIPL760 TIPL760 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760A PDF

    Untitled

    Abstract: No abstract text available
    Text: TIPL761, TIPL761A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1000 Volt Blocking Capability C 2 ● 100 W at 25°C Case Temperature


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    TIPL761, TIPL761A OT-93 TIPL761 SAP741AB TCP741AE PDF

    BY205-400

    Abstract: TIPL765A 2N2222 2N2904 D44H11 D45H11 TIPL765 2n2222 npn
    Text: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature


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    TIPL765, TIPL765A OT-93 TIPL765 TCP765AH BY205-400 TIPL765A 2N2222 2N2904 D44H11 D45H11 TIPL765 2n2222 npn PDF

    Untitled

    Abstract: No abstract text available
    Text: TIPL765, TIPL765A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 10 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C ● 1000 Volt Blocking Capability ● 125 W at 25°C Case Temperature


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    TIPL765, TIPL765A global/pdfs/TSP1203 OT-93 TCP765AH TIPL765 SAP765AB PDF

    2N2926 equivalent

    Abstract: beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A


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    50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2926 equivalent beta transistor 2N2222 2N3392 equivalent 2N3416 equivalent 2n3393 equivalent 2N3900A 2N3394 equivalent 2N3859A equivalent to PNP 1N4532 2N5232A equivalent PDF

    fan regulator using remote control

    Abstract: 2N2222 circuit 2n2222 npn transistor hysteresis PWM techniques LM85 2N2222 national 2n2222 national semiconductor 3LM85 AN-1260 2N2222 NPN Transistor features
    Text: National Semiconductor Application Note 1260 Emmy Denton September 2002 To lower cost, many embedded processor systems include a hardware monitor for rudimentary system diagnostics. This helps ensure that the right person is sent to fix the problem with proper replacement parts. The system diagnostics include detection of power supply over/under voltage, system


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    PDF

    2n6004

    Abstract: 2n4424 2N5825 2N6015 2N6000 GET2222A 2n524 2N5309 2N6006 d33025
    Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V c E O '~ '\ „ ^ I V oltage 50/iA to NPN 5mA 5mA ra p GET706 GET708 to GET914 GET3013 GET3646 HPH : 2N6000 2N60Q2 2N6001 2N6S03 75mA 75mA t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p


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    50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2n6004 2n4424 2N5825 2N6015 2N6000 GET2222A 2n524 2N5309 2N6006 d33025 PDF

    TIPL760B

    Abstract: 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760C by205
    Text: TIPL760B, TIPL760C NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 4 A Continuous Collector Current ● Operating Characteristics Fully Guaranteed at 100°C B 1 ● 1200 Volt Blocking Capability C 2 ● 75 W at 25°C Case Temperature


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    TIPL760B, TIPL760C O-220 TIPL760B TIPL760B 2N2222 2N2904 BY205-400 D44H11 D45H11 TIPL760C by205 PDF