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    U1 3150 TRANSISTOR Search Results

    U1 3150 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    U1 3150 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor d 1302

    Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component

    amplifier TRANSISTOR 12 GHZ

    Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 01 — 11 December 2008 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927

    smd transistor 6g

    Abstract: 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B BLS6G2731-6G TAJD106K035R transistor equivalent table sot975c radar circuit component
    Text: BLS6G2731-6G LDMOS S-Band radar power transistor Rev. 01 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2731-6G BLS6G2731-6G smd transistor 6g 6G smd transistor s band POWER TRANSISTOR 2.7 3.1 3.5 GHZ nxp 544 200B TAJD106K035R transistor equivalent table sot975c radar circuit component

    BLS7G2933S-150

    Abstract: radar amplifier s-band SOT922-1 JESD625-A
    Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS7G2933S-150 BLS7G2933S-150 radar amplifier s-band SOT922-1 JESD625-A

    BLS7G2933S-150

    Abstract: a 3150 data sheet JESD625-A
    Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 1 — 12 November 2010 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS7G2933S-150 BLS7G2933S-150 a 3150 data sheet JESD625-A

    Untitled

    Abstract: No abstract text available
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130

    Untitled

    Abstract: No abstract text available
    Text: BLS7G2933S-150 LDMOS S-band radar power transistor Rev. 2 — 23 February 2011 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS7G2933S-150

    Untitled

    Abstract: No abstract text available
    Text: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance


    Original     		PDF BLS6G2933S-130 BLS6G2933S-130

    c2328a

    Abstract: B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors
    Text: NPN Medium Power Transistors NPN Medium Power Transistors Device No. [Mark] Case Style VCES* V V CBO EBO V (V) Min (V) Min Min VCEO I CBO VCB I V hFE @ C & CE Min Max (mA) (V) (nA) @ (V) Max IC C ob (mA) @ (V) & (pF) I (V) Max (I = C ) Max Min Max B 10 V CE(SAT)


    Original     		PDF O-92L OT-89 KSB1121 MPS8550 MPS6562 c2328a B564A c 2328a 8050 sot89 SD471A D471A 8550 SOT-89 63916 BC337 medium power transistors

    Untitled

    Abstract: No abstract text available
    Text: 19-2155; Rev 0; 10/01 Single 500Mbps LVDS Line Receiver in SC70 Features ♦ Space-Saving SC70 Package 50% Smaller than SOT23 ♦ Guaranteed 500Mbps Data Rate ♦ Low 250ps (max) Pulse Skew ♦ High-Impedance LVDS Inputs When Powered Off Allow Hot Swapping


    Original     		PDF 500Mbps MAX9130 500Mbps 250MHz) ANSI/TIA/EIA-644 f-Nov-2008

    VIPER L2A RoHS

    Abstract: Viper L2A schematic diagram offline UPS ZO 103 TRIAC PL3150-L10 Wiegand schematic PL3120-E4T10 upc 3842 SCR C103 TRANSISTOR SUBSTITUTION DATA BOOK
    Text: PL 3120 / PL 3150® Power Line Smart Transceiver Data Book @ ® Ve r s i o n 2 005-0154-01C Echelon, LON, LONWORKS, LonBuilder, NodeBuilder, LonManager, LonTalk, Neuron, LONMARK, 3120, 3150, the Echelon logo, and the LONMARK logo are registered trademarks of Echelon Corporation. LonMaker, LNS, i.LON, ShortStack, and LonSupport are trademarks of


    Original     		PDF 005-0154-01C S23-S29, VIPER L2A RoHS Viper L2A schematic diagram offline UPS ZO 103 TRIAC PL3150-L10 Wiegand schematic PL3120-E4T10 upc 3842 SCR C103 TRANSISTOR SUBSTITUTION DATA BOOK

    005-0139-01D

    Abstract: FT3150 P20 FT-X1 FT-X1 X2 ftt-10a FT3150 ft3120 FCC-801-M3-16A Echelon FTT-10A ISO 14230
    Text: FT 3120 / FT 3150® Smart Transceiver Data Book @ ® 005-0139-01D Echelon, LON, LONWORKS, Neuron, 3120, 3150, LonTalk, NodeBuilder, LNS, LonMaker, i.LON, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries.


    Original     		PDF 005-0139-01D 005-0139-01D FT3150 P20 FT-X1 FT-X1 X2 ftt-10a FT3150 ft3120 FCC-801-M3-16A Echelon FTT-10A ISO 14230

    AN1103 ST

    Abstract: AN1103 back-emf motor application note ST72141 TS274 zero crossing
    Text: AN1103 APPLICATION NOTE IMPROVED B-EMF DETECTION FOR LOW-SPEED AND LOW-VOLTAGE APPLICATIONS WITH ST72141 by Microcontroller Division Applications The ST72141 Microcontroller has been designed by STMicroelectronics for BLDC motor drives. Optimized for sensorless motor control, based on back-EMF zero-crossing detection


    Original     		PDF AN1103 ST72141 ST72141 AN1103 ST AN1103 back-emf motor application note TS274 zero crossing

    echelon FT-x3

    Abstract: neuron 5000 14255R-400 abstract on mini ups system circuit design schematic diagram offline UPS EN14908 FT5000 EVB echelon FT-x2 HP8656B service manual 14235r
    Text: Series 5000 Chip Data Book 005-0199-01A Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of


    Original     		PDF 05-0199-01A TPT/XF-1250 echelon FT-x3 neuron 5000 14255R-400 abstract on mini ups system circuit design schematic diagram offline UPS EN14908 FT5000 EVB echelon FT-x2 HP8656B service manual 14235r

    Series 5000 Chip Data Book

    Abstract: echelon FT-x3 echelon FT-x2 echelon FT-x3 14255R abstract on mini ups system abstract on mini ups system circuit design schematic diagram offline UPS eePROM 2832 FCC-801-M3-16A neuron 5000
    Text: Series 5000 Chip Data Book 0 0 5 - 0 1 9 9 - 0 1B Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, LNS, ShortStack, LonMaker, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. 3170 and FTXL are trademarks of


    Original     		PDF TPT/XF-1250 Series 5000 Chip Data Book echelon FT-x3 echelon FT-x2 echelon FT-x3 14255R abstract on mini ups system abstract on mini ups system circuit design schematic diagram offline UPS eePROM 2832 FCC-801-M3-16A neuron 5000

    LM565 equivalent

    Abstract: missile irig tones ic lm565 LM107 substitution IRIG equivalent schematic of LM107 LM565 IRIG am output circuit IRIG modulator LM1596
    Text: INTRODUCTION The phase locked loop has been found to be a useful element in many types of communication systems It is used in two fundamentally different ways 1 as a demodulator where it is used to follow phase or frequency modulation and (2) to track a carrier or synchronizing signal which may


    Original     		PDF

    transistor top200yai

    Abstract: TOPSWITCH TOP200YAI TOP200Yai equivalent furukawa TEX-E EN 50065-1 PLT-21 PLT-20 Z2180U EN50065-1
    Text: ® TOPSwitch Power Supply for Echelon® PLT-20 Power Line Transceiver Design Note DN-13 Introduction A TOPSwitch power supply is ideally suited to power the Echelon PLT-20 power line transceiver control node. TOPSwitch requires 50% fewer components compared with a discrete


    Original     		PDF PLT-20 DN-13 transistor top200yai TOPSWITCH TOP200YAI TOP200Yai equivalent furukawa TEX-E EN 50065-1 PLT-21 Z2180U EN50065-1

    echelon FT-x1

    Abstract: DBC2C20 EN14908 005-0139-01D EN14908-1 elektronik DDR FT-X1 NCB15 U1 U FT 3120 and FT 3150 Smart Transceiver
    Text: FTXL Hardware Guide 078-0364-01A Echelon, LONWORKS, LONMARK, LonTalk, Neuron, 3120, 3150, and the Echelon logo are trademarks of Echelon Corporation registered in the United States and other countries. FTXL, 3190, and ShortStack are trademarks of Echelon Corporation.


    Original     		PDF 78-0364-01A echelon FT-x1 DBC2C20 EN14908 005-0139-01D EN14908-1 elektronik DDR FT-X1 NCB15 U1 U FT 3120 and FT 3150 Smart Transceiver

    toko a50

    Abstract: 1820-2000 WBC1-1TL DC1027A LT5568
    Text: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Up or Downconverting Applications Noise Figure: 9.3dB Typical at 900MHz Output Conversion Gain: 2.4dB Typical IIP3: 9dBm Typical at ICC = 10mA Adjustable Supply Current: 4mA to 13.4mA


    Original     		PDF LT5560 01MHz 900MHz LT5534 50MHz LTC5536 600MHz 26dBm 12dBm LT5537 toko a50 1820-2000 WBC1-1TL DC1027A LT5568

    WBC1-1TL

    Abstract: marking LCBX LCBX DC1027A LT5560 HHM1583B1 datasheet j98 RB 5560 HHM1526 WBC1
    Text: LT5560 0.01MHz to 4GHz Low Power Active Mixer U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 5560 is a low power, high performance broadband active mixer. This double-balanced mixer can be driven by a single-ended LO source and requires only


    Original     		PDF LT5560 01MHz LT5560 900MHz LT5534 50MHz LTC5536 600MHz 26dBm 12dBm WBC1-1TL marking LCBX LCBX DC1027A HHM1583B1 datasheet j98 RB 5560 HHM1526 WBC1

    A844V0101

    Abstract: No abstract text available
    Text: UM10731 SSL3401DB1174 7 W mains dimmable MR16/12 V driver for GU5.3 22 mm Rev. 1.1 — 14 November 2013 User manual Document information Info Content Keywords SSL3401DB1174, board version A844V0101, MR16 LED driver, mains dimmable, constant current, driver, low voltage supply, AC-to-DC


    Original     		PDF UM10731 SSL3401DB1174 MR16/12 SSL3401DB1174, A844V0101, SSL3401 SSL3401DB1174. A844V0101

    Untitled

    Abstract: No abstract text available
    Text: w en zr ISJ ÇD ro a ULTRASENSITIVE BIPOLAR HALL-EFFECT SWITCHES These Hall-effect switches are designed for magnetic actuation using a bipolar magnetic field, i.e., a north-south alternating field. They combine extreme magnetic sensitivity with excellent stability over


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: BIPOLAR HALL-EFFECT SWITCH FOR HIGH-TEMPERA TURE OPERA TION This low-hysteresis bipolar Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for operation over extended temperature ranges to +150°C. Superior


    OCR Scan     		PDF

    diode BYG 220

    Abstract: A 3121 IC 3144E A3121 A3121EU A3122 A3123 GH-038 3141E byg 220
    Text: 3121, 3122 , a n d 3123 D : IO So> i NJ CO >. Ì $ i 00 2. HALL-EFFECT SWITCHES FOR HIGH-TEMPERA TURE OPERA TION These Hall-effect switches are monolithic integrated circuits with tighter magnetic specifications, designed to operate continuously over extended temperatures to +150°C, and are more stable with both tem­


    OCR Scan     		PDF PH-003A diode BYG 220 A 3121 IC 3144E A3121 A3121EU A3122 A3123 GH-038 3141E byg 220