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    U1620G TRANSISTOR Search Results

    U1620G TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    U1620G TRANSISTOR Datasheets Context Search

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    u1620G

    Abstract: transistor u1620G transistor U1620 U1620 aka u1620 U1620 diode rectifier u1620G u1620G aka MURF1620CTG U1620G transistor
    Text: MURF1620CT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. Features • • • • • • • • • http://onsemi.com Ultrafast 35 Nanosecond Recovery Times


    Original     		PDF MURF1620CT E69369 MURF1620CT/D u1620G transistor u1620G transistor U1620 U1620 aka u1620 U1620 diode rectifier u1620G u1620G aka MURF1620CTG U1620G transistor