UC38xx
Abstract: unitrode U-128 BA1610 UC3825 application note UC28xx
Text: IN TEG R A T ED CIR C UITS U C 1823A ,B /1825A ,B UNITRODE U C 2823A , B /2825A,B U C 3823A ,B /3825A ,B High Speed PWM Controller FEATURES DESC RIPTIO N “Bold Type” Denotes improved or new features • Improved versions of the UC3823/UC3825 PWMs The UC3823A & B and the UC3825A & B family of PWM control ICs are Improved versions of the standard
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/1825A
/2825A
/3825A
UC3823/UC3825
UC3823A
UC3825A
UC3823
UC3825
12MHz
UC1823A
UC38xx
unitrode U-128
BA1610
UC3825 application note
UC28xx
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TRANSISTOR Marking XB PNP
Abstract: YTS3906
Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity
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YTS3906
-50mA,
YTS3904
300ne
TRANSISTOR Marking XB PNP
YTS3906
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optocoupler P 521
Abstract: 521 optocoupler 731 OPTOCOUPLER 64 LEAD DIP OUTLINE toshiba tlp
Text: 5 -2 Standard Lead Forming 5-2-1) SURFACE MOUNT LEAD BEND OPTIONS LF1) (LF4) (LF5) “ LF5 H f» Outline 8 pin 4 pin 4 • J t I A_a_a_a n a y uuy 3 1 4 16pin 6 pin • 5 4 Pi f l FI ¿ .a fi n n n n a U S“ B i u u u u u u u u > 3 i e oT he photocoupler line-up with lead ben
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16pin
TLP731
TLP731p
optocoupler P 521
521 optocoupler
731 OPTOCOUPLER
64 LEAD DIP OUTLINE
toshiba tlp
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tms4256
Abstract: TMS4266
Text: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)
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U17ES
077GC
TM4256EL9,
TM4256GU9
-ifc-23-/7
TM4266EL9
30-Pln
TM4256EL9)
TM4266GU9)
tms4256
TMS4266
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sf3d42c
Abstract: SF3G42C
Text: THYRISTOR SILICON PLANAR TYPE SF3 D,G 42C LOW POWER CONTROL APPLICATIONS. Unit in mm 1 0.0 1 0.5 Repetitive Peak Off-State Voltage: Vr)RM=200~400V DRM“ Repetitive Peak Reverse Voltage ^RRM =10V r (S3.2±0.1 •ix" • Plastic Mold Package • Peak On-State Voltage
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SF3D42C
SF3G42C
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TOSHIBA RECTIFIER
Abstract: No abstract text available
Text: Introduction Thank you very much for using TOSHIBA Semiconductor Devices. This volume is the latest 1994 Version o f the “ Recti fiers” Semiconductor Data Book. Recent years have seen the phenomenal propagation o f elec tronic equipment o f all kinds including information processing
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2N3147
Abstract: 2N3146 Texas Germanium Germanium power
Text: TYPES 2N3146, 2N3147 P-N-P ALLOY-JUNCTION GERMANIUM POWER TRANSISTORS S 5 £m HIGH-VOLTAGE HIGH-POWER TRANSISTORS for w V» z M Z z P ft z “ MILITARY AND INDUSTRIAL APPLICATIONS m ech a n ica l d a ta S » I- These tran sistors a re in precisio n w e ld e d , h e rm e tic a lly s e a le d en closures. The m ounting b a s e p ro v id e s an
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2N3146,
2N3147
2N3146
Texas Germanium
Germanium power
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tc9168n
Abstract: n1082 auto tuning LG VR 22K preset m2603
Text: ap TOSHIBA-» ’’E L E C T R O N I C "DE i D Ê J ciac17S47 □ 0 1 ñ l h c] 1 T-77-05-05 ÉéffljáfcBMÉjfaMfrÍÍiw “*w¿fí*Sai AM SINGLE CHIP DIGITAL TUNING SYSTEM. . Unit in mm TC9168N is C-MOS LSI developed for radio of PLL frequency synthesizer type digital tuning system.
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17S47
T-77-05-05
TC9168N
TC9168N
TC9168S
n1082
auto tuning LG
VR 22K preset
m2603
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M6JZ47
Abstract: M6GZ47 U5100 *M6JZ47 M6JZ u160d A0-125
Text: TRIAC SM6 G,J Z47 SM6(G,J)Z47A SILICON PLANAR TYPE AC POWER CONTROL APPLICATIONS. . Repetitive Peak Off-State Voltage Vdrm*A00, 600V . R.M.S On-State Current I t Unit in mm 10.3 MAX (R M S)“ 6A & 32 ±0.2 . High Commutating (dv/dt) . Isolation Voltage v ISOL=1500V
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SM6GZ47
SM6GZ47A
SM6JZ47
SM6JZ47A
l-10ms)
M6JZ47
M6GZ47
U5100
*M6JZ47
M6JZ
u160d
A0-125
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Untitled
Abstract: No abstract text available
Text: TOS HIB A -CDISCRETE/OPTOi DE | T G ci7aS0 OODflOME ñ Sh ’ :t\ , 90972SO TOSHIBA {DISCRETE/OPTO 2N5039 56C 080^2 _ _ Io “ IC ~ V CE h a VBE COMMON EMITTER T c= 2 5’C 3 - 2 *> .#«• -n * * i —. 4 .« ,• 05 as 'j ai ao5
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90972SO
2N5039
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laser diode toshiba
Abstract: p04m laser diode head Toshiba Laser Diodes
Text: 0SHI B A LASER/FBR OPTIC Gl D • ^D^7BS2 D G lbl22 1 «TOSti D v TOSHIBA FOR OPTICAL COMMUNICATIONS jSgJpw^BPWgy«11 ' M DFB Laser Diode ä - ' - ' ' T O r ■- - ' •'••*“ “• ' " ' ' Optical Communications Ia tf1* . «f r w k <■>',.■j. ».,.¿Vw rru »J n . . ¡m
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lbl22
OLD300S
T0LD350S
T0LD30QS/350S
55/im
AA27235
3907C
7-10-A
laser diode toshiba
p04m
laser diode head
Toshiba Laser Diodes
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DN-36
Abstract: MA 5036 NS
Text: | i j i _ DN-36 U IM IT R O D E Design Note UC1525B/UC1527B DEVICES Comparison Summary to UC1525A/27A Devices The UC1525B and UC1527B devices are enhanced versions of the previous generation of UC1525A and UC1527A devices. They are pin-for-pin compatible and direct replacements for the “A”
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DN-36
UC1525B/UC1527B
UC1525A/27A
UC1525B
UC1527B
UC1525A
UC1527A
UC1515B/27B
UC1525A/27A
DN-36
MA 5036 NS
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Untitled
Abstract: No abstract text available
Text: 74AC11204 HEX INVERTER/CLOCK DRIVER D3427, O C TO B ER 1989 DW OR N PACKAGE Low-Skew Propagation Delay Specifications for Clock Driver Applications TOP VIEW 1Y[ 1 2Y [ 2 3Y [ 3 Flow-Through Architecture Optimizes PCB Layout * * * Package Options Include Plastic “Small
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74AC11204
D3427,
500-mA
300-mil
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. “ . — LOC ALL RIGHTS RESERVED. REVISIONS DIST AD 00 LTR DESCRIPTION OWN DATE MB MZ 08JON04 REV PER EC 0G3C—0212—04 APVD SPECIFICATIONS; .4 1 3 .5 1 2
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0G3C--0212--04
08JON04
500VDC
08JUN2004
08JUN04
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. D - , - ALL RIGHTS RESERVED. rUTL iï“ L T U J " y T L .52 ,08 C HOUSING SEE TABLE FOR PART NO C S II ñ ñ ñ ñ II Q POSITION #1 INDICATOR FARSIDE K rarograi
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31MAR2000
24JAN05
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Untitled
Abstract: No abstract text available
Text: TD62307P BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC U n i t in nun TD62 3 0 7 P LOW SATURATION DRIVER _ Features • Low Saturation Outputs VcE sat = 0 - M a x . @ I O U T “1 2 0 m A • O u t p u t R a t i n g .
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TD62307P
120mA
0V/150mA
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1s1211
Abstract: No abstract text available
Text: SN74AS4374B OCTAL EDGE-TRIGGERED D-TYPE DUAL-RANK FLIP-FLOPS WITH 3-STATE OUTPUTS SDAS109C D30B1, A PRIL 1988 - REVISED JAN U AR Y 1991 DWOMNMCKAQI 1W V BW • *-8tata Outputs Drtva Bua Unaa Dtrectty • Package Option« Include Plaatlc “Small Outllna" Paakagaa and Standard Plaatlc
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SN74AS4374B
SDAS109C
D30B1,
AS4374B
1s1211
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Untitled
Abstract: No abstract text available
Text: TOSHIBA INTEGRATED CIRCUIT TECHNICAL DATA C2MOS DIGITAL INTEGRATED CIRCUIT SILCON MONOLITHIC P/ F T P A fl U fl 0 7 I U “ U I lU fc # 1 / I TC40H027 TRIPLE 3-INPUT NOR GATE PIN CONNECTION VCD 1c 1Y 3c 3B 1A IB 2A 2B 2C 3A 3Y 2Y V gs MFP14ÍF14GB-P MAXIMUM RATINGS
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TC40H027
MFP14
F14GB-P)
Ta-25
-15PF)
TC40H027P/F
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Untitled
Abstract: No abstract text available
Text: TMS418160A 1048576 BY 16-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 891C - A U G U S T 1996 - R EVISED O C TO BE R 1997 This data sheet is applicable to TMS418160As symbolized by Revision “E” and subsequent revisions as described in the device symbolization section.
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TMS418160A
16-BIT
TMS418160As
1024-Cycle
R-PDSO-J42)
18160A
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M16JZ51
Abstract: m16gz51 SM16J M16G
Text: £ Ê S M 1 6 G Z 5 1 SILICON PLANAR TYPE g R / fl 6 J Z 5 1 AC POWER CONTROL APPLICATIONS. . Repetitive Peak Off-State Voltage v DRIi“ 4 0 0 , 600V . R.M.S On-State Current lT RMS -16A . High Commutating (dv/dt)c
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SM16GZ51
SM16JZ51
M16JZ51
m16gz51
SM16J
M16G
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Untitled
Abstract: No abstract text available
Text: » F I i DTTSSD 00170bD 1 | TOSHIBA {DISCRETE/OPTO! 99D 9097250 TOSHIBA DISCRETE/OPTO D“ P H l- a l 17060 TLOI4 3 , TLOI44 GaAsP ORANGE LIGHT EMISSION 4.9mm DIAMETER(T 13/4, L O W PROFILE) I FEATURES? . SUPER-BRIGHT . Ail Plastic Mold Type TL0143 : Orange Transparent Lens
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00170bD
TLOI44
TL0143
TL0144
TL0143
TL0144
15inA
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TC4007UBP
Abstract: No abstract text available
Text: TP^ fin"#7UDr/ 1IDD/UDl IMDC IU“UU C 2MOS DIGITAL IN T E G R A T E D CIR CU IT S IL IC O N M O N O L IT H IC TC4007UBP/TC4007UBF DUAL COMPLEMENTARY PAIR PLUS INVERTER TC4007UBP/UBF contains three elements of P-channel enhancement type MOS FET and three elements of Nchannel enhancement type MOS FET. One pair of Pchannel and N-channel functions as inverter and
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TC4007UBP/TC4007UBF
TC4007UBP/UBF
TC4007UBP/UBF
TC4007UBP
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mpsa92
Abstract: mpsa93 MPS-A92 SA42 transistor MPSA92 MPS-A93 mpsa92 TRANSISTOR
Text: TOSHIBA TRANSISTOR MPSA92, 93 SILICON PNP TRANSISTOR FOR HIGH VOLTAGE APPLICATION FEATURES: • High Voltage : VCEO=-300V MPSA92 VCEO=“ 200V (MPSA93) • Low Saturation Voltage : ^CE (sat)= _ 0 • (Max.) @ Iq =-20 itiA lB=-2mA • Low Collector Output Capacitance
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MPSA92,
-300V
MPSA92)
MPSA93)
MPSA43
MPSA92
MPSA93
MPS-A92
SA42
transistor MPSA92
MPS-A93
mpsa92 TRANSISTOR
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2N1870
Abstract: 2N187
Text: SCRs 2N 1 87 0A -2 N 1 87 4A , J 1.25 Amp, Planar FEATU RES DESCRIPTION • Available as Either “JAN" or Standard Types • Operating D.C. Current Range: 5 to 1250mA • Pulse Currents: to 30A • Voltage Ratings: to 200V • Maximum Trigger Current: 0.2mA
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1250mA
MIL-S-19500/198,
MIL-STD-701
2N1870
2N187
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