alc883
Abstract: 940GML 945GM NB-945GM U2829 NS87383 CHRONTEL-CH7307 NVIDIA-G72M CN15 jumper LAN TRANSFORMER
Text: 19 21 23 24 26 G1: CMOS clear Jumper Jumper settings 20 22 25 27 28 29 30 31 18 17 16 15 14 13 12 32 1 11 10 9 8 7 6 5 4 2 3 1. Docking CONN. CN9 2. RJ45 CONN. (CN8) 3. CRT CONN. (CN10) 4. LAN TRANSFORMER (U21) 5. SUPER I/O -NS87383 (U20) 6. S-Video CONN. (CN15)
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-NS87383
ALC883
CN220
CHRONTEL-CH7307
NVIDIA-G72M
alc883
940GML
945GM
NB-945GM
U2829
NS87383
CHRONTEL-CH7307
NVIDIA-G72M
CN15 jumper
LAN TRANSFORMER
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U28 113
Abstract: SL72U4J64M4H-A10V
Text: SL72U4J64M4H-A10V 64M X 72 Bits SDRAM Unbuffered DIMM Optimized for ECC PC66 FEATURES GENERAL DESCRIPTION • • • The SiliconTech SL72U4J64M4H-A10V is a 64M x 72 bits Synchronous Dynamic RAM (SDRAM) Dual In-line Memory Module (DIMM). The SL72U4J64M4H-A10V consists of thirtysix CMOS 8M x 4 bits x 4 banks SDRAMs in 54-pin 400-mil
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SL72U4J64M4H-A10V
SL72U4J64M4H-A10V
54-pin
400-mil
168-pin
U0-U35
U28 113
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U28 113
Abstract: SL64U4G32M4G-A10V
Text: SL64U4G32M4G-A10V 32M X 64 Bits SDRAM Unbuffered DIMM FEATURES GENERAL DESCRIPTION • • • The SiliconTech SL64U4G32M4G-A10V is a 32M x 64 bits Synchronous Dynamic RAM SDRAM Dual In-line Memory Module (DIMM). This module consists of thirty-two CMOS 4M
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SL64U4G32M4G-A10V
SL64U4G32M4G-A10V
54-pin
400-mil
168-pin
U0-U31
U28 113
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SL72U4G32M4H-A10V
Abstract: No abstract text available
Text: SL72U4G32M4H-A10V 32M X 72 Bits SDRAM Unbuffered DIMM Optimized for ECC FEATURES GENERAL DESCRIPTION • • • The SiliconTech SL72U4G32M4H-A10V is a 32M x 72 bits Synchronous Dynamic RAM SDRAM Dual In-line Memory Module (DIMM). The SL72U4G32M4H-A10V consists of thirtysix CMOS 4M x 4 bits x 4 banks SDRAMs in 54-pin 400-mil
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SL72U4G32M4H-A10V
SL72U4G32M4H-A10V
54-pin
400-mil
168-pin
U0-U35
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88E1111
Abstract: Marvell PHY 88E1111 Datasheet HFJ11-1G02E VSC8240 Marvell PHY 88E1111 altera Marvell PHY 88E1111 layout PC28F00AM29EWL Marvell PHY 88E1111 MDIO read write sfp 88e1111 sfp i2c Marvell PHY 88E1111 MDIO read write
Text: 100G Development Kit, Stratix IV GT Edition Reference Manual 100G Development Kit, Stratix IV GT Edition Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com MNL-01057-1.0 Subscribe 2010 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX are Reg. U.S. Pat.
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MNL-01057-1
88E1111
Marvell PHY 88E1111 Datasheet
HFJ11-1G02E
VSC8240
Marvell PHY 88E1111 altera
Marvell PHY 88E1111 layout
PC28F00AM29EWL
Marvell PHY 88E1111 MDIO read write sfp
88e1111 sfp i2c
Marvell PHY 88E1111 MDIO read write
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Untitled
Abstract: No abstract text available
Text: Product Specification 1GB 128MX64 SDRAM PC100/PC133 SODIMM General Information Rev: 1.1 VL466S2853-GA/GH/GL 1GB 128Mx64 SDRAM PC100/PC133 SODIMM Description: The VL466S2853 is a 128M x 64 Synchronous Dynamic RAM high density memory module.This memory module consists of thirty-two CMOS 32Mx8 bits with 4 banks Synchronous DRAMs inTSOP-II package and a
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128MX64
PC100/PC133
VL466S2853-GA/GH/GL
VL466S2853
32Mx8
144-pin
A0-A12
DQ0-DQ63
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cke 003
Abstract: DQ41 128MX64 VL466S2853
Text: Product Specification 1GB 128MX64 SDRAM PC100/PC133 SODIMM General Information Rev: 1.1 VL466S2853-GA/GH/GL 1GB 128Mx64 SDRAM PC100/PC133 SODIMM Description: The VL466S2853 is a 128M x 64 Synchronous Dynamic RAM high density memory module.This memory module consists of thirty-two CMOS 32Mx8 bits with 4 banks Synchronous DRAMs inTSOP-II package and a
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128MX64
PC100/PC133
VL466S2853-GA/GH/GL
VL466S2853
32Mx8
144-pin
A0-A12
DQ0-DQ63
cke 003
DQ41
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MT36VDDF25672G
Abstract: No abstract text available
Text: 1GB, 2GB x72, ECC, DR 184-Pin DDR RDIMM Features DDR SDRAM RDIMM MT36VDDF12872 – 1GB MT36VDDF25672 – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 184-pin, registered dual in-line memory module (RDIMM)
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184-Pin
MT36VDDF12872
MT36VDDF25672
184-pin,
PC2100,
PC2700,
PC3200
09005aef80772fd2/Source:
09005aef8075ebf6
DDF36C128
MT36VDDF25672G
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diode marking u33
Abstract: MT46V64M4 PC2100 PC2700 PC3200 256x72
Text: 1GB, 2GB x72, ECC, DR 184-Pin DDR SDRAM RDIMM Features DDR SDRAM RDIMM MT36VDDF12872 – 1GB MT36VDDF25672 – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 184-pin, registered dual in-line memory module
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184-Pin
MT36VDDF12872
MT36VDDF25672
184-pin,
PC2100,
PC2700,
PC3200
cap68-3900
09005aef80772fd2/Source:
09005aef8075ebf6
diode marking u33
MT46V64M4
PC2100
PC2700
PC3200
256x72
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Untitled
Abstract: No abstract text available
Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM)
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240-Pin
MT36GTF51272FY
240-pin,
100ms
MO-256
DDR2-667)
MT36GTF51272F
power3900
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Untitled
Abstract: No abstract text available
Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM)
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240-Pin
MT36GTF51272FY
240-pin,
100ms
MO-256
DDR2-667)
MT36GTF51272F
power3900
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ps3109
Abstract: u28 201 MARKING CODE U37 marking U38 DDR2-667 MO-256 PC2-5300 DDR2 pin out marking micron ddr2 sn131
Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.55V DDR2 SDRAM FBDIMM MT36RTF51272FY – 4GB Features • • • • • • • • Information in the 1.8V DDR2 FBDIMM data sheet is directly applicable to this 1.55V DDR2 FBDIMM, except where stated otherwise in this data sheet.
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240-Pin
MT36RTF51272FY
240-pin,
MO-256
09005aef82b5dfb9
rtf36c512x72fy
ps3109
u28 201
MARKING CODE U37
marking U38
DDR2-667
PC2-5300
DDR2 pin out
marking micron ddr2
sn131
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pn133
Abstract: SN123 MT36GTF51272F
Text: Preliminary‡ 4GB x72, DR, FB, 1.50V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.40V ≤ VDD = VDDQ ≤ 1.70V for DDR2 SDRAM
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240-Pin
MT36GTF51272F
100ms
MO-256
MT36GTF51272F,
80here
09005aef82b5e9cc/Source:
09005aef82b5e99e
GTF36C512x72F
pn133
SN123
MT36GTF51272F
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 4GB x72, DR, FB, 1.55V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36RTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.50V ≤ VDD = VDDQ ≤ 1.90V for DDR2 SDRAM
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240-Pin
MT36RTF51272F
MO-256
MT36RTF51272F,
DDR2-667)
09005aef82b5dfb9/Source:
09005aef82b5dfec
RTF36c512x72
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micron SDRAM SPD table
Abstract: U26 MARKING
Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For
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240-Pin
MT36GTF51272FY
240-pin,
100ms
MO-256
09005aef82b5e9cc
gtf36c512x72f
micron SDRAM SPD table
U26 MARKING
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marking U34 Z 201
Abstract: marking U34 marking code U6 DO 214 SS91
Text: 4GB x72, DR 240-Pin DDR2 SDRAM 1.55V FBDIMM Features 1.55V DDR2 FBDIMM MT36RTF51272FZ – 4GB Features • • • • • • • • Figure 1: 240-Pin FBDIMM (MO-256 R/C E) 240-pin, fully buffered DIMM (FBDIMM) Very low power DDR2 operation 1.5V ≤ VDD ≤ 1.9V for DDR2 SDRAM
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240-Pin
MT36RTF51272FZ
240-pin,
MO-256
DDR2-667)
09005aef840d5a4c
rtf36c512x72fz
marking U34 Z 201
marking U34
marking code U6 DO 214
SS91
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MT47J256M4
Abstract: micron SDRAM SPD table MT47J256M
Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For
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240-Pin
MT36GTF51272FY
240-pin,
100ms
MO-256
09005aef82b5e9cc
gtf36c512x72f
MT47J256M4
micron SDRAM SPD table
MT47J256M
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u28 hall
Abstract: US2881 US2882 hall u28 u28 cmos
Text: US2881/2882 CMOS High Sensitivity Latch Features and Benefits • • • • • • Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost
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US2881/2882
US2881
US2882
-40oC
150oC
23/July/00
u28 hall
US2882
hall u28
u28 cmos
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U28 113
Abstract: No abstract text available
Text: SL72U4J64M4H-A10xV 64M X 72 Bits 512MB SDRAM Unbuffered DIMM ECC Optimized (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability (4096 cycles/64ms refresh)
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SL72U4J64M4H-A10xV
512MB)
PC100)
PC100
cycles/64ms
SL72U4J64M4H-A10xV
U0-U35
U28 113
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Untitled
Abstract: No abstract text available
Text: SL72U4L128M8H-A10xV 128M X 72 Bits 1GB SDRAM Unbuffered DIMM ECC Optimized (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability (8192 cycles/64ms refresh)
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SL72U4L128M8H-A10xV
PC100)
PC100
cycles/64ms
SL72U4L128M8H-A10xV
U0-U35
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u28 sensor hall
Abstract: u28 hall UGN3132 UGN3132/33
Text: US2881/2882 CMOS High Sensitivity Latch Features and Benefits n n n n n n n Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost
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US2881/2882
US2881
US2882
u28 sensor hall
u28 hall
UGN3132
UGN3132/33
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u28 sensor hall
Abstract: u28 hall UGN3132 hall u28 u28 127 hall US2881UA 22323 US2881SO u28 hall SENSOR sot transistor pinout
Text: US2881/2882 CMOS High Sensitivity Latch Features and Benefits • ■ ■ ■ ■ ■ ■ Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost
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US2881/2882
US2881
US2882
u28 sensor hall
u28 hall
UGN3132
hall u28
u28 127 hall
US2881UA
22323
US2881SO
u28 hall SENSOR
sot transistor pinout
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RA11b
Abstract: No abstract text available
Text: SL72R4D32M4H-A10xV 32M X 72 Bits 256MB SDRAM Registered 168-Pin DIMM ECC (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 / Intel 1.0 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability
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SL72R4D32M4H-A10xV
256MB)
168-Pin
PC100)
PC100
cycles/64ms
SL72R4D32M4H-A10xV
U36-U40
A0-A10/AP
RA11b
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S 2563
Abstract: 2564 eprom texas
Text: TMS27C256 262,144 BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY SEPTEMBER 1 9 8 4 - Organization . . . 32K x 8 REVISED NOVEMBER 1985 J PACKAGE TOP VIEW! Single 5-V Power Supply 1 U28 27 2 3 26 4 25 24 5 6 23 7 22 21 8 20 A1C 9 AO C 10 19 18 Q IC 1 Q2 Q 12 17
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PDF
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TMS27C256
144-BIT
S 2563
2564 eprom texas
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