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    U28 CMOS Search Results

    U28 CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy

    U28 CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    alc883

    Abstract: 940GML 945GM NB-945GM U2829 NS87383 CHRONTEL-CH7307 NVIDIA-G72M CN15 jumper LAN TRANSFORMER
    Text: 19 21 23 24 26 G1: CMOS clear Jumper Jumper settings 20 22 25 27 28 29 30 31 18 17 16 15 14 13 12 32 1 11 10 9 8 7 6 5 4 2 3 1. Docking CONN. CN9 2. RJ45 CONN. (CN8) 3. CRT CONN. (CN10) 4. LAN TRANSFORMER (U21) 5. SUPER I/O -NS87383 (U20) 6. S-Video CONN. (CN15)


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    PDF -NS87383 ALC883 CN220 CHRONTEL-CH7307 NVIDIA-G72M alc883 940GML 945GM NB-945GM U2829 NS87383 CHRONTEL-CH7307 NVIDIA-G72M CN15 jumper LAN TRANSFORMER

    U28 113

    Abstract: SL72U4J64M4H-A10V
    Text: SL72U4J64M4H-A10V 64M X 72 Bits SDRAM Unbuffered DIMM Optimized for ECC PC66 FEATURES GENERAL DESCRIPTION • • • The SiliconTech SL72U4J64M4H-A10V is a 64M x 72 bits Synchronous Dynamic RAM (SDRAM) Dual In-line Memory Module (DIMM). The SL72U4J64M4H-A10V consists of thirtysix CMOS 8M x 4 bits x 4 banks SDRAMs in 54-pin 400-mil


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    PDF SL72U4J64M4H-A10V SL72U4J64M4H-A10V 54-pin 400-mil 168-pin U0-U35 U28 113

    U28 113

    Abstract: SL64U4G32M4G-A10V
    Text: SL64U4G32M4G-A10V 32M X 64 Bits SDRAM Unbuffered DIMM FEATURES GENERAL DESCRIPTION • • • The SiliconTech SL64U4G32M4G-A10V is a 32M x 64 bits Synchronous Dynamic RAM SDRAM Dual In-line Memory Module (DIMM). This module consists of thirty-two CMOS 4M


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    PDF SL64U4G32M4G-A10V SL64U4G32M4G-A10V 54-pin 400-mil 168-pin U0-U31 U28 113

    SL72U4G32M4H-A10V

    Abstract: No abstract text available
    Text: SL72U4G32M4H-A10V 32M X 72 Bits SDRAM Unbuffered DIMM Optimized for ECC FEATURES GENERAL DESCRIPTION • • • The SiliconTech SL72U4G32M4H-A10V is a 32M x 72 bits Synchronous Dynamic RAM SDRAM Dual In-line Memory Module (DIMM). The SL72U4G32M4H-A10V consists of thirtysix CMOS 4M x 4 bits x 4 banks SDRAMs in 54-pin 400-mil


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    PDF SL72U4G32M4H-A10V SL72U4G32M4H-A10V 54-pin 400-mil 168-pin U0-U35

    88E1111

    Abstract: Marvell PHY 88E1111 Datasheet HFJ11-1G02E VSC8240 Marvell PHY 88E1111 altera Marvell PHY 88E1111 layout PC28F00AM29EWL Marvell PHY 88E1111 MDIO read write sfp 88e1111 sfp i2c Marvell PHY 88E1111 MDIO read write
    Text: 100G Development Kit, Stratix IV GT Edition Reference Manual 100G Development Kit, Stratix IV GT Edition Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com MNL-01057-1.0 Subscribe 2010 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, HARDCOPY, MAX, MEGACORE, NIOS, QUARTUS and STRATIX are Reg. U.S. Pat.


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    PDF MNL-01057-1 88E1111 Marvell PHY 88E1111 Datasheet HFJ11-1G02E VSC8240 Marvell PHY 88E1111 altera Marvell PHY 88E1111 layout PC28F00AM29EWL Marvell PHY 88E1111 MDIO read write sfp 88e1111 sfp i2c Marvell PHY 88E1111 MDIO read write

    Untitled

    Abstract: No abstract text available
    Text: Product Specification 1GB 128MX64 SDRAM PC100/PC133 SODIMM General Information Rev: 1.1 VL466S2853-GA/GH/GL 1GB 128Mx64 SDRAM PC100/PC133 SODIMM Description: The VL466S2853 is a 128M x 64 Synchronous Dynamic RAM high density memory module.This memory module consists of thirty-two CMOS 32Mx8 bits with 4 banks Synchronous DRAMs inTSOP-II package and a


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    PDF 128MX64 PC100/PC133 VL466S2853-GA/GH/GL VL466S2853 32Mx8 144-pin A0-A12 DQ0-DQ63

    cke 003

    Abstract: DQ41 128MX64 VL466S2853
    Text: Product Specification 1GB 128MX64 SDRAM PC100/PC133 SODIMM General Information Rev: 1.1 VL466S2853-GA/GH/GL 1GB 128Mx64 SDRAM PC100/PC133 SODIMM Description: The VL466S2853 is a 128M x 64 Synchronous Dynamic RAM high density memory module.This memory module consists of thirty-two CMOS 32Mx8 bits with 4 banks Synchronous DRAMs inTSOP-II package and a


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    PDF 128MX64 PC100/PC133 VL466S2853-GA/GH/GL VL466S2853 32Mx8 144-pin A0-A12 DQ0-DQ63 cke 003 DQ41

    MT36VDDF25672G

    Abstract: No abstract text available
    Text: 1GB, 2GB x72, ECC, DR 184-Pin DDR RDIMM Features DDR SDRAM RDIMM MT36VDDF12872 – 1GB MT36VDDF25672 – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 184-pin, registered dual in-line memory module (RDIMM)


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    PDF 184-Pin MT36VDDF12872 MT36VDDF25672 184-pin, PC2100, PC2700, PC3200 09005aef80772fd2/Source: 09005aef8075ebf6 DDF36C128 MT36VDDF25672G

    diode marking u33

    Abstract: MT46V64M4 PC2100 PC2700 PC3200 256x72
    Text: 1GB, 2GB x72, ECC, DR 184-Pin DDR SDRAM RDIMM Features DDR SDRAM RDIMM MT36VDDF12872 – 1GB MT36VDDF25672 – 2GB For component data sheets, refer to Micron’s Web site: www.micron.com Features Figure 2: • 184-pin, registered dual in-line memory module


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    PDF 184-Pin MT36VDDF12872 MT36VDDF25672 184-pin, PC2100, PC2700, PC3200 cap68-3900 09005aef80772fd2/Source: 09005aef8075ebf6 diode marking u33 MT46V64M4 PC2100 PC2700 PC3200 256x72

    Untitled

    Abstract: No abstract text available
    Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM)


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    PDF 240-Pin MT36GTF51272FY 240-pin, 100ms MO-256 DDR2-667) MT36GTF51272F power3900

    Untitled

    Abstract: No abstract text available
    Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • • • • • Figure 1: 240-pin, fully buffered DIMM (FBDIMM)


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    PDF 240-Pin MT36GTF51272FY 240-pin, 100ms MO-256 DDR2-667) MT36GTF51272F power3900

    ps3109

    Abstract: u28 201 MARKING CODE U37 marking U38 DDR2-667 MO-256 PC2-5300 DDR2 pin out marking micron ddr2 sn131
    Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.55V DDR2 SDRAM FBDIMM MT36RTF51272FY – 4GB Features • • • • • • • • Information in the 1.8V DDR2 FBDIMM data sheet is directly applicable to this 1.55V DDR2 FBDIMM, except where stated otherwise in this data sheet.


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    PDF 240-Pin MT36RTF51272FY 240-pin, MO-256 09005aef82b5dfb9 rtf36c512x72fy ps3109 u28 201 MARKING CODE U37 marking U38 DDR2-667 PC2-5300 DDR2 pin out marking micron ddr2 sn131

    pn133

    Abstract: SN123 MT36GTF51272F
    Text: Preliminary‡ 4GB x72, DR, FB, 1.50V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.40V ≤ VDD = VDDQ ≤ 1.70V for DDR2 SDRAM


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    PDF 240-Pin MT36GTF51272F 100ms MO-256 MT36GTF51272F, 80here 09005aef82b5e9cc/Source: 09005aef82b5e99e GTF36C512x72F pn133 SN123 MT36GTF51272F

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 4GB x72, DR, FB, 1.55V 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36RTF51272F – 4GB For the component data sheets, refer to Micron’s Web site: www.micron.com Features • • • • Figure 1: Lower power consumption 1.50V ≤ VDD = VDDQ ≤ 1.90V for DDR2 SDRAM


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    PDF 240-Pin MT36RTF51272F MO-256 MT36RTF51272F, DDR2-667) 09005aef82b5dfb9/Source: 09005aef82b5dfec RTF36c512x72

    micron SDRAM SPD table

    Abstract: U26 MARKING
    Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For


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    PDF 240-Pin MT36GTF51272FY 240-pin, 100ms MO-256 09005aef82b5e9cc gtf36c512x72f micron SDRAM SPD table U26 MARKING

    marking U34 Z 201

    Abstract: marking U34 marking code U6 DO 214 SS91
    Text: 4GB x72, DR 240-Pin DDR2 SDRAM 1.55V FBDIMM Features 1.55V DDR2 FBDIMM MT36RTF51272FZ – 4GB Features • • • • • • • • Figure 1: 240-Pin FBDIMM (MO-256 R/C E) 240-pin, fully buffered DIMM (FBDIMM) Very low power DDR2 operation 1.5V ≤ VDD ≤ 1.9V for DDR2 SDRAM


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    PDF 240-Pin MT36RTF51272FZ 240-pin, MO-256 DDR2-667) 09005aef840d5a4c rtf36c512x72fz marking U34 Z 201 marking U34 marking code U6 DO 214 SS91

    MT47J256M4

    Abstract: micron SDRAM SPD table MT47J256M
    Text: 4GB x72, DR 240-Pin DDR2 SDRAM FBDIMM Features 1.5V DDR2 SDRAM FBDIMM MT36GTF51272FY – 4GB Features • • • • • • • • Except where stated in this data sheet, information in the corresponding 1.8V DDR2 FBDIMM data sheet is directly applicable to the 1.5V DDR2 FBDIMM. For


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    PDF 240-Pin MT36GTF51272FY 240-pin, 100ms MO-256 09005aef82b5e9cc gtf36c512x72f MT47J256M4 micron SDRAM SPD table MT47J256M

    u28 hall

    Abstract: US2881 US2882 hall u28 u28 cmos
    Text: US2881/2882 CMOS High Sensitivity Latch Features and Benefits • • • • • • Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost


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    PDF US2881/2882 US2881 US2882 -40oC 150oC 23/July/00 u28 hall US2882 hall u28 u28 cmos

    U28 113

    Abstract: No abstract text available
    Text: SL72U4J64M4H-A10xV 64M X 72 Bits 512MB SDRAM Unbuffered DIMM ECC Optimized (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability (4096 cycles/64ms refresh)


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    PDF SL72U4J64M4H-A10xV 512MB) PC100) PC100 cycles/64ms SL72U4J64M4H-A10xV U0-U35 U28 113

    Untitled

    Abstract: No abstract text available
    Text: SL72U4L128M8H-A10xV 128M X 72 Bits 1GB SDRAM Unbuffered DIMM ECC Optimized (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability (8192 cycles/64ms refresh)


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    PDF SL72U4L128M8H-A10xV PC100) PC100 cycles/64ms SL72U4L128M8H-A10xV U0-U35

    u28 sensor hall

    Abstract: u28 hall UGN3132 UGN3132/33
    Text: US2881/2882 CMOS High Sensitivity Latch Features and Benefits n n n n n n n Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost


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    PDF US2881/2882 US2881 US2882 u28 sensor hall u28 hall UGN3132 UGN3132/33

    u28 sensor hall

    Abstract: u28 hall UGN3132 hall u28 u28 127 hall US2881UA 22323 US2881SO u28 hall SENSOR sot transistor pinout
    Text: US2881/2882 CMOS High Sensitivity Latch Features and Benefits • ■ ■ ■ ■ ■ ■ Chopper stabilized amplifier stage Optimized for BDC motor applications New miniature package / thin, high reliability package Operation down to 3.5V CMOS for optimum stability, quality, and cost


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    PDF US2881/2882 US2881 US2882 u28 sensor hall u28 hall UGN3132 hall u28 u28 127 hall US2881UA 22323 US2881SO u28 hall SENSOR sot transistor pinout

    RA11b

    Abstract: No abstract text available
    Text: SL72R4D32M4H-A10xV 32M X 72 Bits 256MB SDRAM Registered 168-Pin DIMM ECC (PC100) FEATURES • • • • • • • • • GENERAL DESCRIPTION PC100 / Intel 1.0 Compliant (see Ordering Information) Burst Mode Operation Auto and self refresh capability


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    PDF SL72R4D32M4H-A10xV 256MB) 168-Pin PC100) PC100 cycles/64ms SL72R4D32M4H-A10xV U36-U40 A0-A10/AP RA11b

    S 2563

    Abstract: 2564 eprom texas
    Text: TMS27C256 262,144 BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORY SEPTEMBER 1 9 8 4 - Organization . . . 32K x 8 REVISED NOVEMBER 1985 J PACKAGE TOP VIEW! Single 5-V Power Supply 1 U28 27 2 3 26 4 25 24 5 6 23 7 22 21 8 20 A1C 9 AO C 10 19 18 Q IC 1 Q2 Q 12 17


    OCR Scan
    PDF TMS27C256 144-BIT S 2563 2564 eprom texas