MOSFET SSR
Abstract: No abstract text available
Text: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
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SSR/U3055LA
MOSFET SSR
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Untitled
Abstract: No abstract text available
Text: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
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SSR/U3055LA
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Untitled
Abstract: No abstract text available
Text: SSR/U3055LA Advanced Power MOSFET FEATURES BVDSS = 60 V Logic-Level Gate Drive RDS on = 0.165 Ω Avalanche Rugged Technology Rugged Gate Oxide Technology ID = 8 A Lower Input Capacitance Improved Gate Charge D-PAK Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 60V
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SSR/U3055LA
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ka7745
Abstract: EI-1614 xenon light source circuit diagram igbt xenon tube IC-276 3V to 300V dc dc converter xenon lamp design SGR20N40L SCR TRIGGER PULSE TRANSFORMER xenon strobe lamp
Text: AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is
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AN9006
ka7745
EI-1614
xenon light source circuit diagram
igbt xenon tube
IC-276
3V to 300V dc dc converter
xenon lamp design
SGR20N40L
SCR TRIGGER PULSE TRANSFORMER
xenon strobe lamp
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ka7745
Abstract: 3V to 300V dc dc converter xenon light source circuit diagram EI-1614 igbt xenon tube control light intensity using SCR AN9006 EI 33 transformer SCR TRIGGER PULSE TRANSFORMER SGR20N40L
Text: July, 2000 AN9006 IGBT Application Note For Camera Strobe Camera Strobe System Summary The Camera Strobe System Portable & DSC is a lighting system for taking pictures in relatively dark areas, without the accompanying negative effect on picture quality. The strobe system is
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AN9006
ka7745
3V to 300V dc dc converter
xenon light source circuit diagram
EI-1614
igbt xenon tube
control light intensity using SCR
AN9006
EI 33 transformer
SCR TRIGGER PULSE TRANSFORMER
SGR20N40L
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SSR -25 DD
Abstract: SSR -100 DD MOSFET SSR
Text: SSR/U3055LA Logic-Level Gate Drive Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA Max. @ VDS = 60V ■ Lower Rds(on) : 0.124 n (Typ.)
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SSR/U3055LA
DGM04Ã
SSR -25 DD
SSR -100 DD
MOSFET SSR
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SSR -100 DD
Abstract: No abstract text available
Text: SSR/U3055LA 60 V ^ D S o n = 0 .1 • Logic-Level Gate Drive ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10|iA (M ax.) @ VDS = 60V
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SSR/U3055LA
SSR -100 DD
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U3055L
Abstract: logic level mosfet SSR3055L cc1k SSU3055L 824 mosfet diode 824
Text: N-CHANNEL LOGIC LEVEL MOSFET SSR3055L/U3055L FEATURES • • • • • • • D-PAK Lower R ds ON Excellent voltage stability Fast switching sp eed s Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSR3055L/U3055L
SSR3055U
U3055L
SSR3055L
SSU3055L
ssr3055l/u3055l
logic level mosfet
SSR3055L
cc1k
SSU3055L
824 mosfet
diode 824
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SSR -100 DD
Abstract: 01TAGE
Text: Advanced SSR/U3055LA P o w e r MOSFET FEATURES B V DSS — 6 0 V • Logic-Level G ate Drive ■ A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea
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SSR/U3055LA
SSR -100 DD
01TAGE
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300f diode
Abstract: mosfet DPAK U3055L SSR3055L
Text: N-CHANNEL LOGIC LEVEL MOSFET SSR3055L/U3055L FEATURES D-PAK • L o w e r R d s ON • • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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SSR3055L/U3055L
SSR3055L
SSR3055L/SSU3055L
SSU3055L
SEC0N08)
300f diode
mosfet DPAK
U3055L
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Untitled
Abstract: No abstract text available
Text: SSR/U3055LA Power MOSFET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance o ■ ^ D S o n = II Avalanche Rugged Technology ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■ Lower RDS(ON) : 00 ■ 0.1
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SSR/U3055LA
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