RCK02
Abstract: 51 ohm 5w 102M CNS 020
Text: CNS 020, CNS 021 Vishay Thin Film Conformal, Radial Discrete Resistor FEATURES • Incorporates Ultrastable Thin Film Element TYPICAL PERFORMANCE ▲ ABS TCR The models CNS 020 and CNS 021 resistors incorporate an ultrastable thin film element into the RCK02 form factor
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RCK02
10ppm/
02-May-02
51 ohm 5w
102M
CNS 020
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CECC40300
Abstract: RCK02 CNS 020
Text: CNS 020, CNS 021 Vishay Thin Film Conformal, Radial Discrete Resistor FEATURES • Incorporates Ultrastable Thin Film Element TYPICAL PERFORMANCE ▲ ABS TCR The models CNS 020 and CNS 021 resistors incorporate an ultrastable thin film element into the RCK02 form factor
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RCK02
10ppm/
03-May-01
CECC40300
CNS 020
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RCK02
Abstract: CNS 020
Text: CNS 020, CNS 021 Vishay Thin Film Conformal, Radial Discrete Resistor FEATURES • Incorporates Ultrastable Thin Film Element TYPICAL PERFORMANCE ▲ ABS TCR The models CNS 020 and CNS 021 resistors incorporate an ultrastable thin film element into the RCK02 form factor
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RCK02
10ppm/
15ppm/
08-Apr-05
CNS 020
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sj 2025
Abstract: kf 203 BN72 GE 52D 46V32 223222 F82W LXC 37 Z07N
Text: n ?a``WUf[a`e n MbWU[X[USf[a`e 562dd P_X]k kpg\ BeZi\d\ekXc OfkXip \eZf[\i D62Pz/ /z/Q/z Bk\d LNL fg\e Zfcc\Zkfi flkglk SfckX^\ flkglk J`e\ [i`m\i flkglk O\jgfej\ Qfk\d gfc\ flkglk LNL fg\e Zfcc\Zkfi flkglk k`d\ *O`j\1 SfckX^\ flkglk EXcc+ J`e\ [i`m\i flkglk
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562dd
D62Pz/
522bGq
77SCB
734/46SCB
722SCB
11iii0Sgfa`
/2282J
sj 2025
kf 203
BN72
GE 52D
46V32
223222
F82W
LXC 37
Z07N
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PDF
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Untitled
Abstract: No abstract text available
Text: LEON-G100 Quad Band GSM/GPRS Data and Voice Module Objective Specification Overview The LEON-G100 module from u-blox is a cost efficient solution bringing full feature Quad Band GSM/GPRS data and voice transmission technology in a
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LEON-G100
LEON-G100Â
G1-MS1-09000Â
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LB 1639
Abstract: transistor Bf 444 transistor 4341 transistor BF 258 transistor BF 236
Text: SILICON TRANSISTOR UPA801T NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE S06 (Top View) 2.1 ± 0.1 LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
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UPA801T
NE856
100mA
UPA801T
24-Hour
LB 1639
transistor Bf 444
transistor 4341
transistor BF 258
transistor BF 236
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PDF
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Untitled
Abstract: No abstract text available
Text: MP 72 28 BiC M O S Fixed, Octal, Voltage Output, Single or Dual Supply, 8-Bit Digital-to-Analog Converter FEATURES APPLICATIONS M P S Pioneered S eg m e n te d D A C Approach • Function Generators E i g h t 8 - B i t D A C s wi t h B u f f e r A m p l i f i e r s
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MP7226
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PDF
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opto 721
Abstract: 2SD797 2s0797 AC73 302 opto
Text: St TOSHIBA -C] ISCRETE/OPTO> 9 097 250 TOS HIBA CD ISC R E T E / O P T O ) DE l'iOTTSSD 00D77Ö7 □ 5bC 077ÖT D 'T '- 'T J _ S IL IC O N NPN T R IP L E D IF F U SE D TYPE INDUSTRIAL APPLICATIONS Unit in mm HGIH POWER AMPLIFIER APPLICATIONS.
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ItltIIIIIlllltllllllltIIIIlllIIIIIIII11ll
IIIIIII11lllIllllllllItÂ
opto 721
2SD797
2s0797
AC73
302 opto
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PDF
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TK 9207
Abstract: 9N72 A72M kf 203 3zd1
Text: n MbWU[X[USf[a`e H AH= O = A72M: F O\jfclk`fe*N1O+ AH? Mlkglk g_Xj\ N_Xj\ [`]]\i\eZ\ f] flkglk n ?Sgf[a` Xad jagd eSXWfj yNc\Xj\ b\\g k_\j\ `ejkilZk`fej Xe[ i\m`\n k_\d Y\]fi\ lj`e^ k_`j le`k0 yNc\Xj\ fYj\im\ k_\ ZXlk`fej k_Xk ]fccfn= QSd`[`Y P\i`flj `ealip dXp i\jlck `] `ejkilZk`fej Xi\ efk ]fccfn\[0
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11iii0Sgfa`
/2232F
TK 9207
9N72
A72M
kf 203
3zd1
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PDF
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Untitled
Abstract: No abstract text available
Text: Microsemi m m m Santa Ana, CA M 2830 S. Fairview St. Santa Ana, C A 92704 PH: 714 979-8220 FAX: (714) 966-5256 MSAFX24N50A Features 500 Volts Ultrafast body diode Rugged polysilicon gate cell structure Increased Unclamped Inductive Switching (UIS) capability
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MSAFX24N50A
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IXTH102N20T
Abstract: IXTV102N20T 102A IXTQ102N20T 102N20
Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH102N20T IXTQ102N20T IXTV102N20T = 200 V = 102 A Ω ≤ 23 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 200 V
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IXTH102N20T
IXTQ102N20T
IXTV102N20T
O-247
102N20T
3-07-A
IXTH102N20T
IXTV102N20T
102A
IXTQ102N20T
102N20
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PDF
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Untitled
Abstract: No abstract text available
Text: DEVICE SPECIFICATION SC3518 IO-OUTPUT CLOCK DRIVER GENERAL DESCRIPTION FEATURES • Ten clock outputs at primary frequency up to 80 MHz • Leading edge skew for all outputs <0.5 ns • Proprietary output drivers with: - Complementary 24 mA peak outputs, source
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SC3518
50-75Q
SC3518
25-unit
28-pin
SC3518S-1/D
0002tm
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PDF
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ez821
Abstract: S028 ST72101 ST72101G1 ST72101G2 ST72212 ST72212G2 ST72213 ST72213G1 EI166
Text: SGS-THOMSON S T 7 2 1 0 1 M S T 7 2 2 1 2 /S T 7 2 2 1 3 8-BIT MCU W ITH 4 TO 8K ROM /OTP/EPROM , 256 BYTES RAM, ADC, W DG, SPI AND 1 O R 2 TIM ER S PRO DU CT PREVIEW • User Program Memory ROM/OTP/EPROM : 4 to 8K bytes ■ Data RAM: 256 bytes, including 64 bytes of
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ST72101
ST72212/ST72213
PSDIP32
16-bit
ez821
S028
ST72101G1
ST72101G2
ST72212
ST72212G2
ST72213
ST72213G1
EI166
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PDF
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VB-39
Abstract: No abstract text available
Text: HE RME TI CAL L Y S EA L ED GLASS PACKAGED TU N IN G DIODES ABRUPT and HYPERABRUPT E L E C T R IC A L C H A R A C T E R IS T IC S <Ta = 2 5 ° C unless otherwise noted GENERAL APPLICATIONS Oiodt Cap C T I* î'1 0 % P 4 V / 1 M H/ Dr 04 9 SD M H i R A T IO
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C2/C20
2/C30
SQ1213A
C2/C30
SQ17JB.
C2/C15for
VB-39
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PDF
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LH1530F
Abstract: DI01 LH1540 spn3291
Text: SHARP 1SPECNo. 1 EL 0 6 7 0 5 0 I S S U E: Oct. 4. 1995 To; 1 REFERENCE SPECIFICATIONS Product Type 12 0 Model No. 0ut put LCD Common Driver LH1530F %This specifications containsapages including the cover and appendix. If you have any objectionsplease contact us before issuing purchasing order.
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LH1530F
H6702
SPN3291-00
LH1530F
DI01
LH1540
spn3291
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PDF
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27256 EPROM
Abstract: EVQV
Text: t 28 — A I2 — 2 27 — A7 — 3 2 6 -A13 V dd CMOS 32,768-Word by 8-Bit LSI Static ROM A6 — 4 25 -AS A9 — 9 24 -A 9 Features: A4 — 6 23 - AH A3 — 7 22 -O E /O E A2 — 8 21 -A IO 9 2 0 - 5 E /C E • A synchronous operation
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CDM53256
------A13
28-pin
CDM53256
92CM-3S216R1
27256 EPROM
EVQV
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PDF
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Untitled
Abstract: No abstract text available
Text: GENERAL PURPOSE L TO X-BAND GaAs MESFET FEATURES • OUTLINE DIMENSIONS Units HIGH POWER GAIN: 7 dB TYP at 12 GHz • NE721S01 PACKAGE OUTLINE S01 HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz • • Lg = 0.8 [im , Wg = 330 (im LOW PHASE NOISE: -110 dBc/Hz TYP at 11 GHz
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NE721S01
NE721S01
24-Hour
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PDF
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hitachi eprom
Abstract: HN27C512 DG-28 HN27512 HN27512G-25 HN27512G-30 HN27512P-25 HN27512P-30 HN27512G Hitachi Scans-001
Text: HN27512 Series Maintenance Only 512K 64K x 8-bit UV and OTP EPROM • DESCRIPTION The Hitachi HN27512 is a 512-Kilobit Ultraviolet Erasable and One-Time Programmable Electrically Programmable Read Only Memory organized as 65,536 x 8-bits. The HN27512 features low power dissipation and high speed
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HN27512
512-Kilobit
28-pin
ns/300
A1c-A15
HN27512P
hitachi eprom
HN27C512
DG-28
HN27512G-25
HN27512G-30
HN27512P-25
HN27512P-30
HN27512G
Hitachi Scans-001
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PDF
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VALVO Handbuch
Abstract: valvo handbuch rohren valvo 89 8937 000 Valvo Bauelemente GmbH YD 1175 valvo halbleiter YD1170 20kw Triode triode FU 33
Text: Elektronik. Wir bauen die Elemente. Senderöhren für Industrie generatoren 1983 Datenbuch Elektronik. Wir bauen die Elemente. Unser A rbeitsgebiet - besonders die M i kroelektronik - e ntw ickelt sich im m er rascher zum M otor für eine Vielzahl von Innovationen.
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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PDF
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XR-2011
Abstract: XR2011 XR2013CN XR2013 XR-2012
Text: Z * EX4R XR-2011/12/13/14 High-Voltage, High-Current Darlington Transistor Arrays FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-2011/2012/2013/2014 are high-voltage, highcurrent Darlington transistor arrays consisting of seven silicon NPN Darlington pairs on a common monolithic
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XR-2011/12/13/14
XR-2011/2012/2013/2014
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2011
XR2011
XR2013CN
XR2013
XR-2012
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PDF
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741 cdp
Abstract: 6 pin mini din to usb wiring G7 mic diode TA 7122 AP charger hp MHL Tx VBDET 733p bd91 BD914
Text: BD91411GW Datasheet Built-in OVP Micro USB Switch with USB2.0, MHLTM and Audio BD91411GW ●General Description BD91411GW is USB connector interface IC. It is possible to use it for the application for the mobile device such as smart phones and mobile phones.
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Original
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BD91411GW
BD91411GW
CEA936A,
741 cdp
6 pin mini din to usb wiring
G7 mic diode
TA 7122 AP
charger hp
MHL Tx
VBDET
733p
bd91
BD914
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PDF
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741 cdp
Abstract: diode 20KHz car battery charger test report MHL receiver MHL Tx
Text: Datasheet Built-in OVP Micro USB Switch with USB2.0, MHLTM and Audio BD91411GW ●General Description BD91411GW is USB connector interface IC. It is possible to use it for the application for the mobile device such as smart phones and mobile phones. ●Key Specifications
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Original
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BD91411GW
BD91411GW
CEA936A,
741 cdp
diode 20KHz
car battery charger test report
MHL receiver
MHL Tx
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PDF
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NJU3422
Abstract: NJU3422L SDIP24
Text: NJU3422 Ik f t m T T iW - i > h n - 7 K 7 - f / < f í f l ! mm m NJU3422 l i , 4 /8 1 ' -y h C P U ¿ a > I- □ — =7 U r ^ A t t i * A <í J B É 4 '$ 7 lc S ^ it W ^ " f — í ’RAM , > K H H Æ K g * Œ K 7 - fA ' ^ J± 4 5 V - T7 K U T . * 't 7 > i ',
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NJU3422
SDIP24
NJU3422L
NJU3422
SDIP24
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PDF
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