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Texas Instruments UES1403 Electronic Component
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UES1403 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF
UES1403	Central Semiconductor	DOIDE ULTRA FAST RECOVERY RECTIFIER 8A 2DIE	Original	PDF
UES1403	Microsemi	Rectifier	Scan	PDF
UES1403	Microsemi	Rectifiers, High Efficiency, 7A and 8A	Scan	PDF
UES1403	Microsemi	8 amp ultra fast rectifiers	Scan	PDF
UES1403	Unitrode	International Semiconductor Data Book 1981	Scan	PDF

UES1403 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1N5811 Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403 Text: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization	Original	CPD18 1N5807 1N5811 UES1301 UES1306 UES1401 UES1403 CUDD8-02 24-August 1N5811 CPD18 UES1306 UES1403	PDF
1N5811 Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403 Text: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization	Original	CPD18 1N5807 1N5811 UES1301 UES1306 UES1401 UES1403 CUDD8-02 19-September 1N5811 CPD18 UES1306 UES1403	PDF
BYW19-1000 Abstract: BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200 Text: 41892.6 - FO-012 CROSSREF 11/19/98 10:54 AM Page 1 Harris Semiconductor-An Industry Leader For More Information: Harris Semiconductor comprises one sector of Harris Harris Marketing Support and ask for extension #7820	Original	FO-012 1-800-4-HARRIS BYW19-1000 BYX49-600 BYX49-1200 BYV72E-200 RS8MT byx49 BY229-1000 UNITRODE CROSS BYT29-300 BYV72-200	PDF
MUR1560 equivalent Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in	Original	MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent	PDF
1n5822 trr Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50	PDF
OZ 9983 Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —	Original	MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45	PDF
Diode 1N4007 DO-7 Rectifier Diode Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced	Original	MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode	PDF
1N5807 Abstract: 1N5811 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403 Text: PROCESS CPD18 Ultra Fast Rectifier 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 100 x 100 MILS Die Thickness 14 MILS Anode Bonding Pad Area 78 x 78 MILS Top Side Metalization Ni/Au - 5,000Å/2,000Å Back Side Metalization	Original	CPD18 1N5807 1N5811 UES1301 UES1306 UES1401 UES1403 CUDD8-02 22-March 1N5811 CPD18 UES1306 UES1403	PDF
CTX12SL Abstract: CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200 Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD 10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 10CTF30 10CTF40 10CTQ150 10CTQ150S 10DL2C41A 10DL2CZ47A 10GWJ2CZ47C 10MF2 10MQ040 10MQ060 10MQ090 10TQ035 10TQ045 11DF1 11DF2 11DF4	Original	10BF10 10BF100 10BF20 10BF40 10BF60 10BF80 10BQ015 10BQ040 10BQ060 10BQ100 CTX12SL CTX12S CTX-12SL STPS1045CT RS8KT MBR020 BYT30P-600 RS8DT FMS-3FU BYT01-200	PDF
CTX12S Abstract: CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S Text: CROSS REFERENCE POWER RECTIFIERS INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON EQUIVALENT NEAREST SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 SMBYW01-200 16CTQ100S 10BF40	Original	SMBYW01-200 16CPF20 BYW99W-200 10BF100 STTA112U 16CTQ100 STPS20H100CT 10BF20 16CTQ100S CTX12S CTX12SL CTX-12SL CTB34M FMPG3F BYV10-40 equivalent BAT42 equivalent STPS3045CW Equivalent BYV42-200 CTL22S	PDF
CTX12S Abstract: CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent Text: STMicroelectronics The world’s third largest microchip manufacturer. RECTIFIERS Designers Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT	Original	SGRECT/0802 CTX12S CTX12SL BYV255-200 W210PIV400 SCHOTTKY BARRIER RECTIFIER 40A 15V MBR4015LWT smd schottky diode A2 SOD-123 BYV10-40 PSpice W210PIV-400 shottky barrier diode 100V 100A BYV52-200 equivalent	PDF
stpr16 Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •	Original	MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode	PDF
b2545 transistor Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection	Original	MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface	PDF
BYW29 Abstract: UES1402 UES1403 BYW29-100 BYW29-150 BYW29-50 UES1401 Text: RECTIFIERS BYW29-50 BYW29-100 BYW29-150 High Efficiency, 7 A and 8A UES1401 UES1402 UES1403 FEA TU R ES D ESCRIPTIO N • • • • • The B Y W 2 9 /U E S 1 4 0 0 Series, in a plastic package sim ilar to the T0 -22 0, is sp ecifically designed for operation in power switching	OCR Scan	BYW29-50 UES1401 BYW29-100 UES1402 BYW29-150 UES1403 BYW29/UES1400 O-220, BYW29 UES1403	PDF

BYW29 Abstract: BYW29-100 BYW29-150 BYW29-50 UES1401 UES1402 UES1403 es1403 Text: RECTIFIERS BYW29-50 UES1401 BYW29-100 UES1402 BYW 29-150 UES1403 High Efficiency, 7A and 8A DESCRIPTION The B YW 29/U ES1400 Series, in a plastic package sim ilar to the T0-220, is specifically designed for operation in power switching circuits to frequencies in excess of lOOKHz.	OCR Scan	BYW29-50 UES1401 BYW29-100 UES1402 BYW29-150 UES1403 BYW29/UES1400 O-220, BYW29 UES1403 es1403	PDF
UES1503 Abstract: UES2403 UES1401 UES1402 UES1403 UES1404 UES1501 UES1502 UES1504 UES2402 Text: je m it r o n ic r “ sem ic o n d u c to r s Semitronics Corp. RECTIFIERS High Efficiency, 8A t o - 22o a c ELECTRICAL SPECIFICATIONS Type UES1401 UES1402 UES1403 UES1404 ' Measured in circuit lF = 0.5A, lR = 1.OA, I REC = 0.25A Maximum Forward Voltage @	OCR Scan	to-22oac UES1401 UES1402 UES1403 UES1404 ES2401 UES2402 UES2403 UES2404 UES1503 UES1501 UES1502 UES1504	PDF
DYW29-150 Abstract: es140 byw80 BYW29 diode rectifier BYW29-100 BYW29-150 byw29100 BYW80-50 BYW29-50 UES1404 Text: UES1401 UES1402 UES1403 UES1404 RECTIFIERS High Efficiency, 7A and 8A FEATURES • Very Low Forward Voltage • Very Fast Recovery Tim es • Econom ical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150	OCR Scan	UES1401 BYW29-50 BYW80-50 UES1402 BYW29-100 BYW80-100 UES1403 BYW29-150 BYW80-150 BYW29-200 DYW29-150 es140 byw80 BYW29 diode rectifier byw29100 UES1404	PDF
BYW29-150 diode Abstract: BVW29-50 BYW29 BYW29-150 BYW29-200 BYW29-100 byw80 bvw29 BYW80-100 BYW80-150 Text: RECTIFIERS UES1401 UES1402 UES1403 UES1404 High Efficiency, 7 A and 8A FEATURES • Very Low Forward Vottage • Very Fast Recovery Times • Economical, Convenient Plastic Package • Low Therm al Resistance • M echanically Rugged BYW29-50 BYW29-100 BYW29-150	OCR Scan	UES1401 BYW29-50 BYW80-50 UES1402 BYW29-100 BYW80-100 UES1403 BYW29-150 BYW80-150 UES1404 BYW29-150 diode BVW29-50 BYW29 BYW29-200 byw80 bvw29	PDF
Cross Reference power MOSFET Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630 Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258	OCR Scan	T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630	PDF
ta 8606 n Abstract: 16664 JANTX1N5811US UES1303 21156 109-53 UES1303SM RSF0820 Text: Microserri Ultra Fast Rectifiers Part Number Microsemi Division Package Outline Type 1 Mil \|Spec 1 Data Sheet ID IO Amps VR \| IFSM V F @ I 3 (Volts) l (Amps) iVoits) . 'J ., : 50 ; 150 SF61 Chatsw orth D 0 -2 0 1 A D STD 14795 6 1N5808 W atertow n	OCR Scan		PDF
ph byw29 100 Abstract: UF810 VHE1402 Text: Ultra Fast Recovery Rectifiers UF810 - UF820 —C Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes —B .390 .045 .180 .245 .550 .139 .100 A B C D E F G H J K L M N P Base Cathode _1 .415 .055 .190 .260 .650 .155 .120 .250 .580 .210 .025 .115	OCR Scan	UF810 UF820 O-220AC UF810 ph byw29 100 VHE1402	PDF
USD1120 Abstract: USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702 Text: SCHOTTKY RECTIFIERS PRODUCT SELECTION GUIDE - e Similar to DO-41 TO-247 TO-220AC TO-39 mwm i m m m •' f ö * i . ! Ì ■ _ / •0 41 äEEBIÄE j >, mmm \ . iSA :iw !: VrM • *ss«ki:; • f f i“ USD1120 .45 @ 1A 50A 1N5818 .55 @ 1A 25A USD1130 .475 @ 1A	OCR Scan	DO-41 O-220AC O-247 USD820 1N5817 1N5818 USD1120 USD1130 USD620 USD720 USD1120 USD1130 L5a 12v 30a unitrode 1n5806 USD1120 UNITRODE 150A 100V gto UT347 USD1140 T0447 SES5702	PDF
2N2222A mps Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304 Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71	OCR Scan	1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304	PDF
BYT01-200 Abstract: UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference Text: RECTIFIER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP 1N5615 1N5615GP 1N5617 1N5617GP 1N5619 1N5619GP 1N5621 1N5621GP 1N5623 1N5623GP BYD33D BYD33G BYD33J BYD33K BYD33M BYR29600	OCR Scan	1N4942 1N4942GP 1N4944 1N4944GP 1N4946 1N4946GP 1N4947 1N4947GP 1N4948 1N4948GP BYT01-200 UF54002 RS8KT BYT30P800 MR918 UF54004 PLR818 BYW99P-150 BYW100-100 1N4946 cross reference	PDF

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UES1403 Price and Stock

Texas Instruments UES1403

UES1403 Datasheets (5)

UES1403 Datasheets Context Search

1N5811

1N5811

BYW19-1000

MUR1560 equivalent

1n5822 trr

OZ 9983

Diode 1N4007 DO-7 Rectifier Diode

1N5807

CTX12SL

CTX12S

CTX12S

stpr16

b2545 transistor

BYW29

BYW29

UES1503

DYW29-150

BYW29-150 diode

Cross Reference power MOSFET

ta 8606 n

ph byw29 100

USD1120

2N2222A mps

BYT01-200