ufnd110
Abstract: ufnd112
Text: POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For A utom atic Insertion • C ompact, End Stackable • Fast Sw itching • Low Drive Current • Easily Paralleled • No Second Breakdown • Excellent Tem perature S tability DESCRIPTION
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UFND110
UFND113
ufnd110
ufnd112
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UFN540
Abstract: UFN833 UPT613 UFNF130 UFN451 U2T105 U2T305 TQ-66 ufn432 UFN450
Text: N-CHANNEL POWER MOSFETS Vm ft»* «» Dram On-State Source •Resist ance Voltage Volts (Shuns) PRODUCT SELECTION GUIDE Is Continuous Drain Current :. . 1°« . Pulsed: . ÉwMiv Current Part ■ ‘lifcrtr: Numbers j : Càsja; (Amps) : Vos Drain. On-State
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U2TA506
U2TA508
U2TA510
861-6S40
UFN540
UFN833
UPT613
UFNF130
UFN451
U2T105
U2T305
TQ-66
ufn432
UFN450
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ufnd110
Abstract: T3535
Text: UNITRODE TS CORP 9347963 dF U N I T R O D E CORP | =5347^3 92D D.Gia717 10797 3 D POWER MOSFET TRANSISTORS 100 Volt, 0.6 Ohm N-Channel FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current • Easily Paralleled
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Gia717
UFND110
UFND113
T3535
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