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    UGF2008

    Abstract: No abstract text available
    Text: UGF2008 8W, 2.0 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 8W, it is ideal for CDMA, TDMA, GSM, and Multi-Carrier


    Original     		PDF UGF2008 UGF2008F UGF2008P UGF2008-178 UGF2008