UGN3020 HALL EFFECT DEVICE Search Results

UGN3020 HALL EFFECT DEVICE Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
MG800FXF1JMS3		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

UGN3020 HALL EFFECT DEVICE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
A3121 8 pin Abstract: A3144E UGN3019 ugn3020 ugn3020 hall effect device A3121 ugn3040 UGN3120U A3144 hall effect A3144 Text: FAQ from Unipolar Hall-Effect Digital Switches A3121/2/3, A3141/2/3/4 E LL G Most Frequently Asked Questions (FAQ) A R O MicroSystems, Inc. 1. I am trying to replace UGN3120U in my application. What do you recommend? We recommend using A3144EU because the operate point range is 70 to 350 gauss	Original	A3121/2/3, A3141/2/3/4) UGN3120U A3144EU UGN3120U) A3121 UGN3019/3113/3119; A3141 UGN3040/3140; A3144 A3121 8 pin A3144E UGN3019 ugn3020 ugn3020 hall effect device A3121 ugn3040 A3144 hall effect	PDF
ugn3020 hall effect device Abstract: UGN-3040 ugn3040 UGN3019 ugn3020 UGN3040T UGN-3040T QD344S7 UGN3030 Text: TEXAS INSTR Í L I N / I N T F O SS DEj 0^1754 QD344S7 fi V 8 9 6 1 7 2 4 TEXAS INSTR CLIN/INTFC ~r 34457 T-*^5-05 SERIES TL160 SILICON HALL EFFECT SWITCHES LINEAR INTEGRATED CIRCUITS • 55C D 2 62 0, D EC EM B ER 1983 Magnetic-Field-Senslng Hall-Effect Input	OCR Scan	QD344S7 UGN3019, UGN3020, UGN3030, UGN3040 TL160 TL16pply ugn3020 hall effect device UGN-3040 UGN3019 ugn3020 UGN3040T UGN-3040T UGN3030	PDF
TL3020C Abstract: ugn3020 hall effect device TL302 TL3020 UGN3020 Text: TL3020C SILICON HALL-EFFECT SWITCH D2903, OCTOBER 1985-REVISED APRIL 1988 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Standard Bipolar Technology Minimizes ESD Susceptibility • I o l . . . 20 mA Min at V O L ” 0 .4 V	OCR Scan	TL3020C D2903, 1985-REVISED UGN3020 ugn3020 hall effect device TL302 TL3020 UGN3020	PDF
thyristor TAG 8506 Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719 Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y	OCR Scan	11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719	PDF