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    UHF/POWER AMPLIFIERS Search Results

    UHF/POWER AMPLIFIERS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    UHF/POWER AMPLIFIERS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MHW2727

    Abstract: Amplifier Modules motorola MHW2727-3 sps 1951 Motorola UHF Power Amplifier Module
    Text: MOTOROLA Order this document by MHW2727/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Silicon FET Power Amplifiers MHW2727-3 Designed for 7.5 volt UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios.


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    MHW2727/D MHW2727-3 420AC MHW2727 Amplifier Modules motorola MHW2727-3 sps 1951 Motorola UHF Power Amplifier Module PDF

    Motorola UHF Power Amplifier Module

    Abstract: MHW2805-1 MHW2805-2 420AB
    Text: Order this document by MHW2805/D MHW2805-1 MHW2805-2 Advance Information UHF Silicon FET Power Amplifiers Designed for 7.5 V UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 V Characteristics:


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    MHW2805/D MHW2805-1 MHW2805-2 420AB Motorola UHF Power Amplifier Module MHW2805-1 MHW2805-2 420AB PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MHW707/D SEMICONDUCTOR TECHNICAL DATA MHW707-1 MHW707-2 MHW707-3 MHW707-4 The RF Line UHF Power Amplifiers Designed for 7.5 Volt UHF power amplifier applications in industrial and commercial equipment primarily hand portable radios.


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    MHW707/D MHW707-1 MHW707-2 MHW707-3 MHW707-4 MHW707â PDF

    MHW2805-1

    Abstract: MHW2805-2 Motorola UHF Power Amplifier Module
    Text: Order this document by MHW2805/D MHW2805-1 MHW2805-2 ARCHIVE INFORMATION UHF Silicon FET Power Amplifiers Designed for 7.5 V UHF power amplifier applications in industrial and commercial equipment primarily for hand portable radios. • Specified 7.5 V Characteristics:


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    MHW2805/D MHW2805-1 MHW2805-2 MHW2805-1 MHW2805-2 Motorola UHF Power Amplifier Module PDF

    LF1002

    Abstract: MHW2821 MHW2821-1 MHW2821-2 phcenix MHW2621-1
    Text: .— MOTOROLA SEMICONDUCTOR ‘* TECHNICAL Order this document bv MHW28211D DATA The RF Line MHW2821-1 MHW2821-2 UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications commercial FM equipment operating from 806 to 950 MHz.


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    MHW28211D MHW2821-1 MHW2821-2 MHW2821 MHW2821 Arizona85036 2PHX246180-O 23E1l LF1002 MHW2821-1 MHW2821-2 phcenix MHW2621-1 PDF

    MHW2821-1

    Abstract: 81 210 W 20 MHW2821 MHW2821-2 Motorola UHF Power Amplifier Module motorola application note amplifier power
    Text: Order this document by MHW2821/D MHW2821-1 MHW2821-2 UHF Silicon FET Power Amplifiers Designed for 12.5 V UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz. • Specified 12.5 V Characteristics: RF Input Power: ≤250 mW MHW2821–1


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    MHW2821/D MHW2821-1 MHW2821-2 MHW2821 301AB MHW2821-1 81 210 W 20 MHW2821-2 Motorola UHF Power Amplifier Module motorola application note amplifier power PDF

    MHW2821-1

    Abstract: MHW2821 MHW2821-2
    Text: MOTOROLA Order this document by MHW2821/D SEMICONDUCTOR TECHNICAL DATA MHW2821-1 MHW2821-2 The RF Line UHF Silicon FET Power Amplifiers Designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to 950 MHz.


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    MHW2821/D MHW2821-1 MHW2821-2 MHW2821 301AB MHW2821-1 MHW2821-2 PDF

    BLV862

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification File under Discrete Semiconductors, SC08a 1996 Jun 11 Philips Semiconductors Preliminary specification UHF linear push-pull power transistor FEATURES


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    BLV862 SC08a OT262B SCA49 127041/1200/02/pp8 BLV862 PDF

    mhw720a2

    Abstract: MHW720-A2 Motorola UHF Power Amplifier Module MHW720a1 mhw*720A1 mhw720a VK200-20/4B CASE-700 schematic diagram for phoenix power system VK200-20
    Text: MOTOROLA Order this document by MHW720A1/D SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Amplifiers MHW720A1 MHW720A2 Capable of wide power range control as encountered in UHF cellular telephone applications. • MHW720A1 400 – 440 MHz • MHW720A2 440 – 470 MHz


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    MHW720A1/D MHW720A1 MHW720A2 MHW720A1 MHW720A2 MHW720A1/D* MHW720-A2 Motorola UHF Power Amplifier Module mhw*720A1 mhw720a VK200-20/4B CASE-700 schematic diagram for phoenix power system VK200-20 PDF

    BY206

    Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in


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    BLW34 BY206 C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor PDF

    BLW33

    Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in


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    BLW33 BLW33 BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558 PDF

    BY206

    Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in


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    BLW32 BY206 BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430 PDF

    cermolox

    Abstract: TP105 burle "Power Tube"
    Text: 4665 Power Tube UHF Pulsed Power Amplifier Tube - Cermolox - Forced-Air-Cooled - Coaxial Terminals - Full Input to 1215 MHz - 65kW Peak Pulsed Power Output - Controlled Interelectrode Capacity The BURLE 4665 is designed for use as a reliable UHF pulsed


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    Power UHF amplifiers 432 MHz

    Abstract: Transistor 1308 transistor 1334 SOT634A BLF2022-125
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 PINNING - SOT634A FEATURES


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    M3D792 BLF2022-125 OT634A SCA75 613524/03/pp8 Power UHF amplifiers 432 MHz Transistor 1308 transistor 1334 SOT634A BLF2022-125 PDF

    TRANSISTOR SMD MARKING CODE w2

    Abstract: smd TRANSISTOR code marking w2 smd transistor marking u1 SMD transistor MARKING CODE 312 TEKELEC all transistor book AN10229 transistor smd marking code c3 smd transistor marking C14 8DS3
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF1820-90 UHF power LDMOS transistor Product specification Supersedes data of 2001 Mar 07 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1820-90 PINNING FEATURES


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    M3D379 BLF1820-90 15-Aug-02) TRANSISTOR SMD MARKING CODE w2 smd TRANSISTOR code marking w2 smd transistor marking u1 SMD transistor MARKING CODE 312 TEKELEC all transistor book AN10229 transistor smd marking code c3 smd transistor marking C14 8DS3 PDF

    2222 031 capacitor philips

    Abstract: transistor bd139 BLV862 BD139 philips power transistor bd139 AN98014 smd transistor Nr 912 smd transistor SMD transistor L17 UT70-25
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D091 BLV862 UHF linear push-pull power transistor Product specification Supersedes data of 1997 Oct 14 1999 Jun 25 Philips Semiconductors Product specification UHF linear push-pull power transistor BLV862 PINNING FEATURES


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    M3D091 BLV862 125002/05/pp12 2222 031 capacitor philips transistor bd139 BLV862 BD139 philips power transistor bd139 AN98014 smd transistor Nr 912 smd transistor SMD transistor L17 UT70-25 PDF

    2SC2586

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.


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    2SC2586 2SC2586 P11693EJ1V0DS00 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF1032 The RF Line UHF Power TVansistor . . . designed primarily for large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 6.0 W, TO 1.0 GHz UNEAR UHF POWER TRANSISTOR


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    MRF1032 MRF1032 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Tkansistor . . . designed primarily for wideband, large-signal output and driver amplifier stages to 1.0 GHz. • Designed for Class A Linear Power Amplifiers 4.5 W, TO 1.0 GHz LINEAR UHF POWER TRANSISTOR


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    MRF1031 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC 2586 is an NPN silicon epitaxial transistor designed for UHF-band medium pow er amplifiers.


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    2SC2586 11693EJ1V0D PDF

    MHW820-1

    Abstract: MHW820-3 MOTOROLA hybrid amplifiers MHW820-3
    Text: MOTOROLA • SEMICONDUCTOR MHW820-1 MHW820-2 MHW820-3 TECHNICAL DATA The RF Line 18/20 W — 806-950 MHz RF POWER AMPLIFIERS UHF POWER AMPLIFIERS . designed for 12.5 volt UHF power amplifier applications in industrial and commercial FM equipment operating from 806 to


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    MHW820-1 MHW820-2 MHW820-3 MHW820-1 MHW820-3) EB-107. MHW820-3 MOTOROLA hybrid amplifiers MHW820-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.


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    2SC2586 2SC2586 PDF

    Untitled

    Abstract: No abstract text available
    Text: b S H T û E 1! D O lflO öl ÖTT MITSUBISHI SEMICONDUCTOR GsAsMMIC MGF7113P UHF BAND GaAs POWER AMPLIFIER IC DESCRIPTION Unlttmillimeters OUTLINE DRAWING MGF7113P is a monolithic microwave integrated circuit for use in UHF band power amplifiers. 3 C Z I@


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    MGF7113P MGF7113P 900MHz 240mA PDF

    2SC2762

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIALTRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC2762 is an NPN silicon epitaxial transistor designed for in millimeters UHF-band medium pow er amplifiers.


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    2SC2762 2SC2762 PDF