Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    UHF 150W MOSFET Search Results

    UHF 150W MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    UHF 150W MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SD2921

    Abstract: No abstract text available
    Text: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS . . PRELIMINARY DATA GOLD METALLIZATION NO THERMAL RUNAWAY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB GAIN @ 175 MHz .500 4 LFL M174 epoxy sealed ORDER CODE BRANDING SD2921


    Original     		PDF SD2921 SD2921

    uhf 150w mosfet

    Abstract: SC1318 SD2921 SD2921-10 m174 Sc-1321 LE1-75
    Text: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2921-10 SD2921-10 SD2921 SD2921 uhf 150w mosfet SC1318 m174 Sc-1321 LE1-75

    6W toroid TRANSFORMER

    Abstract: SD2921-10 uhf 150w mosfet SD2921 pin configuration 20k ohm potentiometer SC1318
    Text: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2921-10 SD2921-10 SD2921 SD2921 6W toroid TRANSFORMER uhf 150w mosfet pin configuration 20k ohm potentiometer SC1318

    uhf 150w mosfet

    Abstract: SD2921 10000 uF 63V capacitor RF POWER TRANSISTOR 1200 uF 63V capacitor 1200 uF 63V capacitor 2% capacitor 100 uf 63v TC 2,2 uF 20V SD2921-10 VK200
    Text: SD2921-10  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2921-10 SD2921-10 SD2921 SD2921 uhf 150w mosfet 10000 uF 63V capacitor RF POWER TRANSISTOR 1200 uF 63V capacitor 1200 uF 63V capacitor 2% capacitor 100 uf 63v TC 2,2 uF 20V VK200

    6W toroid TRANSFORMER

    Abstract: SC1318 SD2921 VK200 556 b uhf vhf transformer schematic
    Text: SD2921  RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS


    Original     		PDF SD2921 SD2921 6W toroid TRANSFORMER SC1318 VK200 556 b uhf vhf transformer schematic

    uhf 150w mosfet

    Abstract: SD2931 SD2931-10 TSD2931-10 VK200 resistor 330 Ohm
    Text: SD2931-10  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA ν ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB gain @175 MHz THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES


    Original     		PDF SD2931-10 SD2931-10 SD2931 SD2931 uhf 150w mosfet TSD2931-10 VK200 resistor 330 Ohm

    Dow Corning 340

    Abstract: SD2931 TSD2931 FS 0245
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 14 dB GAIN @175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS


    Original     		PDF SD2931 SD2931 TSD2931 Dow Corning 340 TSD2931 FS 0245

    SD2921

    Abstract: SC13200 SC1318
    Text: SD2921 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is


    Original     		PDF SD2921 SD2921 SC13200 SC1318

    6W toroid TRANSFORMER

    Abstract: 1200 uF 63V capacitor VK200 SD2921 q 1257 sc1317 SC1318
    Text: SD2921  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is


    Original     		PDF SD2921 SD2921 6W toroid TRANSFORMER 1200 uF 63V capacitor VK200 q 1257 sc1317 SC1318

    uhf 150w mosfet

    Abstract: 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346
    Text: The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10 s Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications TM Features • Silicon MOSFET Technology • Operation from 24V to 50V


    Original     		PDF HVV0912-150 121eliable. EG-01-DS11A or429-HVVi uhf 150w mosfet 10uF CAPACITOR 1210 PACKAGE capacitor 10uF/63V smd transistor EK 10uf 63v capacitor 50V 1215MHZ banana socket datasheet capacitor 220uF/63V diode gp 429 DS2346

    rf push pull mosfet power amplifier

    Abstract: 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941
    Text: polyfet rf devices Broad Band RF Power MOSFET Transistors TB# 178 179 180 181 182 183D 184 185 186 187 188 189 191 192 193A 194 195 196 197 199 200NUM1 201 202 203 204 205 206 207 208 210 211 212 Freq Range 136-174 30-88 50-88 118-165 100-500 1.5-30 1.5-30


    Original     		PDF 200NUM1 SQ221 LK822 LK722 LX521 rf push pull mosfet power amplifier 100 watt hf mosfet 12 volt 150w amplifier RF VHF 139 144 mhz uhf 150w mosfet 150w amplifier RF VHF 139 - 144 mhz LDMOS 15w ldmos l2711 vhf LP801 LK602 LR941

    uhf 150w mosfet

    Abstract: MRF275G "RF MOSFET" 150W 500MHZ 28V AN211A
    Text: MRF275G The RF MOSFET Line 150W, 500MHz, 28V Designed primarily for wideband large–signal output and driver stages from 100 – 500 MHz. M/A-COM Products Released - Rev. 07.07 Product Image N-Channel enhancement mode • • • • Guaranteed performance @ 500 MHz, 28 Vdc


    Original     		PDF MRF275G 500MHz, uhf 150w mosfet MRF275G "RF MOSFET" 150W 500MHZ 28V AN211A

    TSD2921

    Abstract: SGS-THOMSON SGS-Thomson Transistors
    Text: TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    Original     		PDF TSD2921 TSD2921 SGS-THOMSON SGS-Thomson Transistors

    TSD2921

    Abstract: No abstract text available
    Text: TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


    Original     		PDF TSD2921 TSD2921

    1200 uF 63V capacitor

    Abstract: 1200 uF 63V capacitor 2% SD2921 SD2921-10 VK200 m 404 g
    Text: SD2921-10 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz . THERMALLY ENHANCED PACKAGING FOR LOWER JUNCTION TEMPERATURES DESCRIPTION


    OCR Scan     		PDF SD2921-10 150WMIN. SD2921-10 SD2921 SDC15 1200 uF 63V capacitor 1200 uF 63V capacitor 2% VK200 m 404 g

    Untitled

    Abstract: No abstract text available
    Text: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 12.5 dB gain @175 MHz DESCRIPTION The SD2921 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2921 is


    OCR Scan     		PDF SD2921 SD2921 1011000D

    SD2931

    Abstract: DOW 340 Dow Corning 340 Dow Corning DC 11 TSD2 TSD2931
    Text: SD2931 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs TARGET DATA . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . POUT = 150W MIN. WITH 14 dB GAIN @175 MHz DESCRIPTION The SD2931 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2931 is


    OCR Scan     		PDF SD2931 SD2931 TSD2931 1011000D DOW 340 Dow Corning 340 Dow Corning DC 11 TSD2 TSD2931

    Untitled

    Abstract: No abstract text available
    Text: SD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS P R E L IM IN A R Y D A T A . GOLD METALLIZATION • NO THERMAL RUNAWAY . COMMON SOURCE CONFIGURATION ■ P o u t = 150W MIN. WITH 12.5 dB GAIN @ 175 MHz p— , .500 4 LFL M 174 e p o x y s e a le d


    OCR Scan     		PDF SD2921 SD2921

    IFRZ44

    Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N
    Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541


    OCR Scan     		PDF 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1

    Untitled

    Abstract: No abstract text available
    Text: / I T SGS-THOMSON ^7# [M œ tôSKgïïM KS TSD2921 RF & MICROWAVE TR AN SISTO RS _HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under


    OCR Scan     		PDF TSD2921 TSD2921

    Untitled

    Abstract: No abstract text available
    Text: rz 7 SGS-THOMSON ^>7# s T S D 2921 RF & MICROWAVE TRANSISTO RS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCTDEVELOPMENTDATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to


    OCR Scan     		PDF TSD2921

    TSD2921

    Abstract: No abstract text available
    Text: rz T SGS-THOMSON ^ 7# HD »iLECÊ¥ Q !D(gI TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specitications tor a product which is currently under development by SGS-THOMSON. The design criteria and specitications ot this item could change prior to


    OCR Scan     		PDF TSD2921 TSD2921

    ksd 250v 10a

    Abstract: B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733
    Text: FUNCTION GUIDE TRANSISTORS 3. QUICK REFERENCE TABLE APPLICATION 3.1 Audio Equipment Package Application SOT-23 TO-92 FM RM AMP M ix Conv Local O se IF KSC 2223 KSC 2223 KSC 2223 KSC 2715 KSC 1674 KSC 1674 KSC1674/KSC1675 KSC838/KSC1676 AM RF Conv O se KSC1623


    OCR Scan     		PDF OT-23 KSC1623 812/KSC SA812/KSC KSA812/KSC1623 KSC1674/KSC1675 KSC838/KSC1676 KSC945/KSC815 ksd 250v 10a B0X34C ksd 202 ksa 3.3 KSC1330 IR 733 sa992 uhf fm 1845 IF 508AF KSA733