SOT223 MARKING L5
Abstract: L42 marking transistor THN6701B FR4 dielectric constant 4.6 FR4 dielectric constant vs temperature transistor 1608 transistor L42
Text: THN6701B Semiconductor SiGe NPN Transistor Unit in mm SOT-223 □ Applications 6.5 - VHF and UHF power amplifier 3.0 4 - High power gain 7.0 3.5 □ Features GP = 14 dB at VCE = 6 V, IC = 400 mA, f = 465 MHz - High power 1 POUT = 35 dBm 3W at VCE = 6 V, ICQ = 50 mA, f = 465 MHz
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THN6701B
OT-223
SOT223 MARKING L5
L42 marking transistor
THN6701B
FR4 dielectric constant 4.6
FR4 dielectric constant vs temperature
transistor 1608
transistor L42
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FR4 dielectric constant 4.6
Abstract: C5 MARKING TRANSISTOR SiGe POWER TRANSISTOR THN6701B R6701 transistor 1608 L28 marking
Text: Preliminary Specification THN6701B NPN SiGe RF POWER TRANSISTOR Unit in mm SOT223 □ Applications 6.5 - UHF and VHF wide band amplifier 3.0 4 - High power gain 7.0 3.5 □ Features MAG = 15 dB @ VCE = 6 V, IC = 400 mA, f = 465 MHz - High power 1 POUT = 35 dBm 3W @ VCE = 6 V, ICQ = 50 mA, f = 465 MHz
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Original
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THN6701B
OT223
FR4 dielectric constant 4.6
C5 MARKING TRANSISTOR
SiGe POWER TRANSISTOR
THN6701B
R6701
transistor 1608
L28 marking
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PDF
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2SC2642
Abstract: No abstract text available
Text: J.£.i6.£.u <^>£.m.i- -ona\j.ckoi L/~* 10 duct i, Line. u Cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC2642 Unit in nun UHF BAND POWER AMPLIFIER APPLICATIONS • Output Power : Po = 12W(Min.)
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2SC2642
470MHz,
2SC2642
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transistor D 1557
Abstract: RD15HVF1 RD15HV D 1413 transistor MOSFET RF POWER TRANSISTOR VHF 703 MOSFET TRANSISTOR Semiconductor 1346 transistor transistor 45 f 123 UHF POWER mosfet 3w transistor d1 391
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD15HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz15W 520MHz,15W 3.2+/-0.4 1.3+/-0.4 3.6+/-0.2 2 9+/-0.4 1.2+/-0.4 0.8+0.10/-0.15 APPLICATION 1 2 3 For output stage of high power amplifiers in VHF/UHF
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RD15HVF1
175MHz15W
520MHz
RD15HVF1
175MHz
520MHz
transistor D 1557
RD15HV
D 1413 transistor
MOSFET RF POWER TRANSISTOR VHF
703 MOSFET TRANSISTOR
Semiconductor 1346 transistor
transistor 45 f 123
UHF POWER mosfet 3w
transistor d1 391
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2SC2106
Abstract: No abstract text available
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2106 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONSFEATURES : . Output Power : P0=12W Min. (f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCC=15V, Pi=3W, f=470MHz
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OCR Scan
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2SC2106
470MHz,
470MHz
470MHz
2SC2106
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2SC2380
Abstract: uhf 3W amplifier 2SC238
Text: 2SC2380 SILIC O N NPN E P IT A X IA L P LA NA R TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=12W Min. (f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR § VCC=12.6V, Pi=3W, f=470MHz
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OCR Scan
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2SC2380
470MHz,
470MHz
2SC2380
uhf 3W amplifier
2SC238
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PDF
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10ID
Abstract: 2SC3006
Text: TOSHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3006 UHF BAND POWER AMPLIFIER APPLICATIONS • Output Power : Unit in mm Po = 3W Min. (f= 470MHz, V e e = 12.6V, Pi = 0.4W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING
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OCR Scan
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2SC3006
470MHz,
470MHz
10ID
2SC3006
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PDF
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2SC3006
Abstract: 2SC300
Text: 2SC3006 SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES : . Output Power : P0=3W Min. (f=470MHz, Vcc=12.6V, Pi=0.4W) MAXIMUM RATINGS (Ta-25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage
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OCR Scan
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2SC3006
470MHz,
Ta-25
470MHz
02/iF
2SC3006
2SC300
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. • Output Power : Po = 12W Min. (f= 470MHz, V ee = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Voltage
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OCR Scan
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2SC2642
470MHz,
02//F
961001EAA2'
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PDF
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10ID
Abstract: 2SC2642
Text: TOSHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS Output Power : Po = 12W Min. (f= 470MHz, V e e = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT
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OCR Scan
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2SC2642
470MHz,
470MHz
961001EAA2'
10ID
2SC2642
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2642 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2642 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. Output Power : Po = 12W Min. (f= 470MHz, VCC = 12.6V, Pi = 3W) MAXIMUM RATINGS (Tc = 25°C) UNIT V V V 1. EMITTER A 2. BASE 3. EMITTER
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OCR Scan
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2SC2642
470MHz,
02//F
5X20X0
961001EAA2'
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PDF
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P104W
Abstract: 2SC2104
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2104 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, P1=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VcC=15V, Pi=0.4W, f=470MHz
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OCR Scan
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2SC2104
470MHz,
470MHz
470MHz
P104W
2SC2104
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2SC2391
Abstract: pjw1
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2391 Unit In mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=3W Min. (f=470MHz, VCC=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ VCc=15V, Pi=0.4W, f=470MHz
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OCR Scan
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2SC2391
470MHz,
470MHz
470MHz
02/iF
--470M
2SC2391
pjw1
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2SC2391
Abstract: 10ID
Text: ~5Í T O S H I B A -CDISCRETE/OPTO} 909 725 0 TOSHIBA dF|t[H7S50 00G7S5ä CD ISC RETE/OPTO SILICON NPN EPITAXIAL PLANAR TYPE_ Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : Po= 3W Min.) (f=470MHz, VCC=12.6V, Pi=0.4W)
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H7S50
470MHz,
470MHz
I11LI
2SC2391
10ID
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb D e ”! T T 72S □ DD07S S4 DISCRETE/OPTO SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=12W(Min.) (f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase
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OCR Scan
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DD07S
470MHz,
470MHz
07SSS
2SC2380
470MHz
-15pF
01/iF
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SC3006 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE K f í n n fi UHF BAND POWER AMPLIFIER APPLICATIONS Output Power Unit in mm Po = 3W Min. r f= 4 .7 0 iv m 7 V. / in = 1 9. RV -P i- = n 4.W1 . , MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC
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OCR Scan
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2SC3006
01//F
10//F
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TO SHIBA Sb SE I TOTTESD DGDT^flM 3 bôC CDIS C R E T E /O PTO SILICON NPN EPITAXIAL P LA NA R TYPE_ 07484 2 S C 2 0 7 ", j 3 - o s ' 1 4 Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=3W Min.')
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OCR Scan
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470MHz,
470MHz
70MHz
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PDF
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2SC2106
Abstract: 10ID
Text: SÍ TOSHIBA íDISCRETE/OPTO> 9097 250 TO SHIBA DE I^GTTaSD QODTMflfl O CD IS C R E T E /O P T O SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONSFEATURES : . Output Power : P0=12W Min.) (f=470MHz, V CC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase
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OCR Scan
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r-33-Â
2SC2106
470MHz,
470MHz
11II111
I1K111SIII
II111II1III
II111
2SC2106
10ID
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PDF
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10ID
Abstract: 2SC2380 13Supply 2SC2380 TOSHIBA
Text: TOSHIBA {DISCRETE/OPTO} 909 725 0 T OSH IBA Sb 1>F| L O T O S O 0007524 0 J DISCRETE/OPTO ?3- Oj SILICO N NPN E P IT A X IA L PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0=12W(Min.) (f=470MHz, VCC=12.6V, Pi=3W)
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OCR Scan
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470MHz,
470MHz
10ID
2SC2380
13Supply
2SC2380 TOSHIBA
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PDF
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Untitled
Abstract: No abstract text available
Text: 5b TOSHI BA - { D I S C R E T E / O P T O } 9097250 TOSHIBA DÉT| T C m S S D □Dü7S2fi DI SC RE TE /O PT O> SILICON NPN EPITA X IA L PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES: . Output Power : P0=3W(Min. (f=470MHz, VCc=12.6V, Pi=0.4W)
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OCR Scan
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470MHz,
470MHz
2SC2391
470MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA Sb DE I ciGli7aSD □007Mñfl O 56C 0 7 * 8 8 D I S C R E T E / O P T O DT*J3-ûf SILICON NPN EPITA X IA L PLANAR TYPE Unit in mm UHF BAND POWER AMPLIFIER APPLICATIONSFEATURES : . Output Power : P 0=12W(Min.) (f =4 70 MH z, V cc= 1 2 .6V, Pi=3W)
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OCR Scan
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470MHz
2SC2106
70MHz
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PDF
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PO7C
Abstract: 2SC2380 2SC238
Text: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R
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OCR Scan
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2SC2380
470MHz,
470MHz
10tnA,
70MHz
PO7C
2SC2380
2SC238
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1966 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC1966 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on UHF band mobile radio applications. D im ensions in mm FEATURES •
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2SC1966
2SC1966
470MHz
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PDF
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ALL BAND TV TUNER IC
Abstract: DIODE CG4 sony tv circuit diagram pll uhf oscillator sony TV TUNER pin uhf varicap varicap diode tv tuner t1ls tv tuner ic CXA3025N
Text: SONY CXA3095N A ll Band TV Tuner 1C VHF-CATV-UHF Description The CXA3095N is a single chip TV tuner 1C which performs as an oscillator, mixer for VHF-CATV and UHF bands. An IF amplifier is also provided. This 1C adopts a 24-pin SSOP package (0.8mm pitch) in response to the trend toward miniaturizing
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OCR Scan
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CXA3095N
CXA3095N
24-pin
CXA3025N
24PIN
SSOP-24P-L03
SSOP024-P-0056
ALL BAND TV TUNER IC
DIODE CG4
sony tv circuit diagram
pll uhf oscillator
sony TV TUNER pin
uhf varicap
varicap diode tv tuner
t1ls
tv tuner ic
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PDF
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