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    UJT TRANSISTOR Search Results

    UJT TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    UJT TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UJT 2n3904

    Abstract: transistor 2N4033 ujt 2N6027 2n4209 datasheet mj15003 equivalent transistor 2N5401 mj15004 2N4393 MJ15003 MJ15004 BAV45
    Text: Selection Guide Page Small Signal Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Bipolar Power Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Programmable UJT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24


    Original     		PDF

    applications of ujt

    Abstract: ujt transistor UJT APPLICATION applications of ujt with circuits NTE6410 ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download
    Text: NTE6410 Unijunction Transistor UJT Description: The NTE6410 is a PN unijunction transistor in a TO92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Absolute Maximum Ratings: (TA = +25°C unless other specified)


    Original     		PDF NTE6410 NTE6410 300mW applications of ujt ujt transistor UJT APPLICATION applications of ujt with circuits ujt as a relaxation oscillator Unit junction transistor UJT unijunction transistor ujt data book free download

    NTE4011B

    Abstract: NTE4001B NTE955M NTE4013B NTE7486 NTE7490 NTE956 NTE4081B NTE931 NTE4069
    Text: NTE Electronics Transistors, Diodes, Rectifiers and ICs Silicon Unijunction Transistor UJT Stock No. Mfr.Õs Type Case Style 935-6196 935-6200 935-6202 6401 6409 6410 TO18 TO18 TO92 Maximum RMS Emitter Current Intrinsic Stand Off Ratio Interbase Resistance


    Original     		PDF TE7475 NTE992 NTE7476 NTE2013 NTE7486 NTE4001B NTE7490 NTE4011B NTE74121 NTE4013B NTE955M NTE956 NTE4081B NTE931 NTE4069

    NT101

    Abstract: N13T1 N13T2 2NS027 NT102 2NS120 013T3 PROGRAMMABLE UJT N13T-1 Mpu6027
    Text: PROGRAMMABLE UJT Item Number Part Number Manufacturer Po Max VGKF Max W (V) IT Max (A) Pulse ITRM Max @ Width (A) (s) IGAO Max (s) VT Max (A) Vs @ Test (V) Operating Temperature (Oe) Min Max Package Style Programmable Unijunction Transistors, (PUTs) 5 10


    Original     		PDF NT101 NT102 TN41A TN41B MTU21 MTU22 2NSl17 2NSl18 BRY39 013T1 N13T1 N13T2 2NS027 2NS120 013T3 PROGRAMMABLE UJT N13T-1 Mpu6027

    ujt transistor

    Abstract: transistor 2n4852 applications of ujt 2N4851 UJT 2N4851 2N4853 2N4852 UJT APPLICATION unijunction transistor UJT 2N4852
    Text: 2N4851 2N4852 2N4853 PN SILICON UNIJUNCTION TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4851, 2N4852, and 2N4853 are Silicon PN Unijunction Transistors designed for timing, sensing, and trigger circuits. MARKING: FULL PART NUMBER


    Original     		PDF 2N4851 2N4852 2N4853 2N4851, 2N4852, 2N4853 PRR10pps) 2N4852) 2N4853) ujt transistor transistor 2n4852 applications of ujt 2N4851 UJT 2N4851 2N4852 UJT APPLICATION unijunction transistor UJT 2N4852

    UJT 2N4871

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 2N4870-2N4871 PN UNIJUNCTION TRANSISTORS MAXIMUM RATINGS Rating RMS power dissipation 1 RMS emitter current Peak pulse emitter current (2) Symbol Value Unit PD 300 mW Ie 50 mA ie 1.5 Amp Emitter reverse voltage VB2E 30 Volts Interbase voltage †


    Original     		PDF 2N4870-2N4871 04mW/Â 10PPS. UJT 2N4871

    diac SBS 14

    Abstract: diac 083 NTE6405 IR 944 triac varactor diode bb 205 APPLICATION for NTE 6407 low voltage scr DIAC 502 TVPA TRANSISTOR 2501 lf 113
    Text: N T E ELE CT RONICS INC_ SEE J> • ~ b43125T D002b72 fibE * N T E 1 -Z S SPECIAL DEVI SILICON UNIJUNCTION TRAN SISTO R UJT Maximum Ratings NTE Type Nim ber Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Vote) RMS Power Dissipation


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    Untitled

    Abstract: No abstract text available
    Text: SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number Case Style Diagram Number RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <pA) lE V bb Pd •e o Intrinsic Stand Off Ratio Interbase


    OCR Scan     		PDF 175mA T092/T098 9h/127b

    NTE+6402

    Abstract: No abstract text available
    Text: SPECIAL DEVICES SILICON UNIJUNCTION TRANSISTOR UJT Maximum Ratings NTE Type Number 6400 6400A 6401 6409 6410 Diagram Number Case Style RMS Emitter Current (mA) Interbase Voltage (Volts) RMS Power Dissipation (mW) Emitter Reverse Current <(lA) Ie VBB Pd •eo


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    2N6120

    Abstract: applications of ujt 2N6119 PN6119 PN6119-18R PN6120 PN6120-18R PROGRAMMABLE UJT 2N6119-2N6120
    Text: Data Sheet central PN6119-18R PN6120-18R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNPN SILICON PROGRAMMABLE UJT Sem iconductor Corp. JEDEC T0-92-18R CASE (AGK) Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF PN6119-18R PN6120-18R T0-92-18R PN6120-18R 2N6119, 2N6120 100iis) PN6119' PN6120 10kfi applications of ujt 2N6119 PN6119 PROGRAMMABLE UJT 2N6119-2N6120

    DIAC 1n5758

    Abstract: 1N5758 diac DIAC 1N5761 1N5758 diac advantage 1N5761 1N5758A 1N5760 1N5761A DIAC 1n5760
    Text: Trigger Devices Trigger devices come under a variety o f d iffe re n t classifications, w ith somewhat d iffe rin g characteristics — U n ijun ctio n Transistors U nidirectional Switches B idirectional Switches Bilateral Triggers PUT D IA C SBS SUS UJT 4 -Layer Diodes


    OCR Scan     		PDF 1N5758/MPT20 1N5760/MPT28 1N5761/MPT32 1N5762 1N5758A 1N5759A 1N5760A 1N5761A 1N5762A MBS4991 DIAC 1n5758 1N5758 diac DIAC 1N5761 1N5758 diac advantage 1N5761 1N5758A 1N5760 1N5761A DIAC 1n5760

    UJT 2N2646

    Abstract: 2n2646 ujt 2N2646 TO-92 PUT 2N2646 UJT 2N4871 2n2646 motorola UJT 2N2646 RANGE applications of ujt ujt timer CIRCUIT applications of ujt with circuits
    Text: g .— , a . Wide Range of Sensitivities S lC S lQ D 3 L 2 W D © @ •■■ ,nPu t C haracteristics fo r M o st A pplications . Industry Standards, w ith a va riety of C ustom S pecifications available. UNIJUNCTION TRANSISTORS - UJT) Device


    OCR Scan     		PDF O-226AA 2N2646 2A-01 2N2647 O-220AB 2N6027 2N6028 MBS4991 O-226AA UJT 2N2646 2n2646 ujt 2N2646 TO-92 PUT 2N2646 UJT 2N4871 2n2646 motorola UJT 2N2646 RANGE applications of ujt ujt timer CIRCUIT applications of ujt with circuits

    UJT 2N2646

    Abstract: 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt UJT 2N2646 oscillators 22A01 ujt transistor
    Text: Silicon Unidirectional Switch - SUS Similar to 4-Layer Diodes, but has gate electrode that permits synchronization. V s V olts Nom Device Type Plastic Case 29-02 I TO-92 MUS4987 M US4988 's Min. Max. 6.0 7.5 10 9.0 jUA Max. m A M ax. ^ 1.5 0.5 500 150 Unijunction Transistors - UJT


    OCR Scan     		PDF ITO-92) MUS4987 MUS4988 IeB20 2A-01 2N4870 2N4871 2N2646 2N2647 2N4851 UJT 2N2646 2n2646 ujt 2N4870 2N4871 2N2646 2N2647 2N4851 2N4852 2N4853 2N2646 TO-92 UJT 2N4871 2N4871 applications of ujt UJT 2N2646 oscillators 22A01 ujt transistor

    ECMC

    Abstract: ujt transistor ECG6403 Silicon unilateral switch 6404a ECG6400B C 1136 Ecg 584
    Text: Special Purpose Devices !^ j b2 Silicon Unijunction Transistors UJT ^ R ß B O (Kohm s) »? E CG Type iE mA M in ECG6400B 50 0.54-0.67 M ax M in 4 Mex Inter­ Base Vo lts PD mW 12 55 450 \l lEO Am ps IV (Min) mA 1 Max 8 Package/ Outline No. TO-39 Fig. S1


    OCR Scan     		PDF ECG6400B ECG6403 ECMC ujt transistor Silicon unilateral switch 6404a C 1136 Ecg 584

    Philips ECG 6402

    Abstract: ECG6410 ECG6402 ECG6401 ECG6405 ECG6409 ECG6404 UJT 43 Programmable Unijunction Transistor Philips ECG ECG6400B
    Text: PHI L IP S E C 6 INC 54E » • bbS3TEfl D0 D7 2S S G32 Special Purpose Devices Silicon Unijunction Transistors UJT 3 n R B B O (Kohm s) P ackage/ Outline No. M in M ax Inter­ Base V olts PD mW n A m ps ■EO IV (M in) mA 0 .5 4 -0 .6 7 4 12 55 450 1 Max


    OCR Scan     		PDF bbS31Efl ECG6400B ECG6401 ECG6409 ECG6410 ECG6402 ECG6404 ECG6405 Philips ECG 6402 UJT 43 Programmable Unijunction Transistor Philips ECG

    2n2646 ujt

    Abstract: applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE
    Text: THOflSON/ DISTRIBUTOR SflE D • T0ELiA73 □□□573û ÛTE B i TCSK Discrete Transistors PNP Signal Transistor Selector Guide ■c Max. mA v (BR)CEO (Min.) V 2N 6076 2 N 4126 2N 4125 2N 3905 2N 3906 -1 0 0 -2 0 0 -2 0 0 -2 0 0 -2 0 0 -2 5 -2 5 -3 0 -4 0


    OCR Scan     		PDF 2N6076 MPS2907A 2N4126 MPS-A55 2N4125 MPS-A56 2N3905 MPS-A93 2N3906 MPS-A92 2n2646 ujt applications of ujt with circuits applications of ujt UJT 2N2646 2N2646 TO-92 UJT 2N4870 UJT 2N2646 oscillators of UJT 2N2646 ujt transistor UJT 2N2646 RANGE

    SCR CONTROL BY PUT CIRCUIT

    Abstract: ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1
    Text: 2N58110-6017 SERIES SEE GES5810-6017 Silicon Programmable Unijunction Transistor D13T SERIES 2N6027.8 PUT The General Electric PUT is a three-terminal planar passivated PNPN device in the standard plastic low cost TO-98 package. The terminals are designated as anode, anode gate and cathode.


    OCR Scan     		PDF 2IM5810-6Q17 GES5810-6017 2N6027 2N6028 2N2926 SCR CONTROL BY PUT CIRCUIT ujt 2N6027 CIRCUITS BY USING 2N6027 PUT 2N6027 applications of ujt ujt timer CIRCUIT D13T1 equivalent applications of ujt with circuits 2n6027 as PUT Oscillator D13T1

    2n2646 equivalent

    Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan     		PDF 2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits

    transistor 123 DL

    Abstract: equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT
    Text: "Öl G E SOLID STATE DE I 3fl7SDfll OOlflOlô t. 01E 18018 3875081 G E SOLID STATE D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: • Planar Passivated Structure • Low Leakage Current


    OCR Scan     		PDF 2N6027 2N6028, GES6027, GES6028 2N6027, 2N6028 GES6028 92CS-4234Â transistor 123 DL equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 ujt 2N6027 PUT 2N6028 2n6027 as PUT Oscillator PUT 2N6027 Programmable Unijunction Transistor SCR CONTROL BY PUT CIRCUIT

    ujt trigger circuit

    Abstract: ujt 2N6027 equivalent transistor of 2n6027 GE 2N6027 2N6028 transistor put 2n6028 UJT TIMERS AND OSCILLATORS equivalent transistor UM 66 SCR TRIGGER PULSE transistor 2N6028
    Text: "Öl G E SOLID STATE 3875081 G E SOLID STATE DE'] 3fl7SDfll 0D1Ö01Ö t. 01E 18018 D Unijunction Transistors and Switches. 2N6027, 2N6028, GES6027, GES6028 Programmable Unijunction Transistor TO-92 TO-98 Features: Applications: • Planar Passivated Structure


    OCR Scan     		PDF 2N6027, 2N6028, GES6027, GES6028 2N6028 14--Hour ujt trigger circuit ujt 2N6027 equivalent transistor of 2n6027 GE 2N6027 transistor put 2n6028 UJT TIMERS AND OSCILLATORS equivalent transistor UM 66 SCR TRIGGER PULSE transistor 2N6028

    TN41A

    Abstract: TN41 Unit junction transistor UJT ujt unijunction transistor
    Text: PROGRAMMABLE UNIJUNCTION TRANSISTOR TN41 A,B SILICON PLANAR TYPE THYRISTOR-TRIGGER, RELAXATION OSCILLATOR, Unit in mm PULSER AND TIMMER APPLICATIONS. FEATURES : . Programmable Item : RßB, 9 » lv and IP . low leakage Current : [GAO= 10nA(Max.) . High Pulse Output Voltage


    OCR Scan     		PDF 100nA TN41A TN41B 100/is TN41A TN41 Unit junction transistor UJT ujt unijunction transistor

    transistor c s z 44 v

    Abstract: C 34 F PH3134
    Text: A # anf AeM P company * Radar Pulsed Power Transistor, 25W, IOOjis Pulse, 10% Duty 3.1 - 3.4 G H z PH3134-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave P o w er T ransistor C o m m o n Base C on figu ration B roadb an d C lass C O p eratio n


    OCR Scan     		PDF PH3134-25M TT50M50A ATC100A transistor c s z 44 v C 34 F PH3134

    motorola eb20

    Abstract: silicon unijunction transistor 2n5431
    Text: motorola sc diodes/opto I sse d • t.3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW DESIGNS 1 ^3 7 ^1 2N5431 P N U nijunction T ran sisto r Silicon Annular Unijunction Transistor . i characterized prim arily for lo w interbase-voltage operation in se n sin g, pulse


    OCR Scan     		PDF 2N5431 Vf32B1CHARAC T-37-JI motorola eb20 silicon unijunction transistor 2n5431

    Unit junction transistor UJT

    Abstract: ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc
    Text: motorola sc I diodes/opto sse d • ti3b7ass a a a Q T m 1 ■ NOT RECOMMENDED FOR NEW D ESIG N S 1^37^1 2N5431 P N U n ijunction T ra n sisto r Silico n A nnular Unijunction Transistor . i characterized primarily for low interbase-voltage operation in sensing, pulse


    OCR Scan     		PDF b3b72SS 2N5431 2A-01 b3b72SS 10flA Unit junction transistor UJT ujt transistor motorola ujt motorola eb20 ujt as a relaxation oscillator 2N5431 CHARACTERISTICS OF UJT Unijunction EB20 transistor wc