Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ULTRA LOW CISS, LOW NOISE JFET Search Results

    ULTRA LOW CISS, LOW NOISE JFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA LOW CISS, LOW NOISE JFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ultra low igss pA

    Abstract: No abstract text available
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW DRIFT │ΔVGS1-2/ΔT│= 5µV/ºC max. ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS830 LS831 LS832 LS833 70nV/â 25-year-old, ultra low igss pA

    Untitled

    Abstract: No abstract text available
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES VGS1-2/ T = 5µV/ºC max. ULTRA LOW DRIFT ULTRA LOW NOISE IG=80fA TYP. LOW NOISE en=70nV/√Hz TYP. LOW CAPACITANCE CISS=3pf max. ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		PDF LS830 LS831 LS832 LS833 70nV/â 25-year-old,

    ultra low igss pA

    Abstract: ultra low igss LS831 LS830 LS832 LS833
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.


    Original     		PDF LS830 LS831 LS832 LS833 70nV/Hz ultra low igss pA ultra low igss LS833

    ultra low igss pA mosfet

    Abstract: jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice
    Text: LS830 LS831 LS832 LS833 ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en= 70nV/√Hz TYP. LOW CAPACITANCE CISS= 3pf MAX.


    Original     		PDF LS830 LS831 LS832 LS833 70nV/Hz ultra low igss pA mosfet jfet transistor 2n4391 "DUAL N-Channel JFET" ultra low Ciss jfet sstpad100 "spice" 2n4416 transistor spice jfet n channel ultra low noise 2N44 Ultra High Input Impedance N-Channel JFET Amplifier 2n3955 transistor spice

    Untitled

    Abstract: No abstract text available
    Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate


    Original     		PDF LSK489 25-year-old,

    LSK489

    Abstract: LSK186 lsk 489 amelco
    Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.5nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate


    Original     		PDF LSK489 LSK489 LSK186 lsk 489 amelco

    LSK489

    Abstract: No abstract text available
    Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate


    Original     		PDF LSK489 25-year-old, LSK489

    LSK186

    Abstract: No abstract text available
    Text: LSK489 LOW NOISE, LOW CAPACITANCE MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8nV/√Hz LOW INPUT CAPACITANCE Ciss = 4pF Features Benefits •       Reduced Noise due to process improvement Monolithic Design High slew rate


    Original     		PDF LSK489 25-year-old, LSK186

    Untitled

    Abstract: No abstract text available
    Text: LSK189 LOW NOISE, LOW CAPACITANCE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 1.8V/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated CISS = 4pF 1 TO 92 TOP VIEW SOT-23 TOP VIEW Maximum Temperatures Storage Temperature


    Original     		PDF LSK189 OT-23 300mW 25-year-old,

    ls846

    Abstract: No abstract text available
    Text: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated CISS = 4pF 1 SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to +150°C


    Original     		PDF LS846 OT-23 300mW 25-year-old, ls846

    Untitled

    Abstract: No abstract text available
    Text: LS846 LOW NOISE, LOW LEAKAGE SINGLE N-CHANNEL JFET FEATURES ULTRA LOW NOISE en = 3nV/√Hz LOW INPUT CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated CISS = 4pF 1 SOT-23 TOP VIEW Maximum Temperatures Storage Temperature -55 to +150°C


    Original     		PDF LS846 OT-23 300mW 25-year-old,

    Untitled

    Abstract: No abstract text available
    Text: LS832 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS832 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is


    Original     		PDF LS832 70nV/Hz

    Untitled

    Abstract: No abstract text available
    Text: LS832 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS832 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is


    Original     		PDF LS832 70nV/Hz

    Untitled

    Abstract: No abstract text available
    Text: LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is


    Original     		PDF LS830 LS830

    Untitled

    Abstract: No abstract text available
    Text: LS831 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS831 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is


    Original     		PDF LS831 70nV/Hz

    70nV

    Abstract: No abstract text available
    Text: LS831 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS831 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is


    Original     		PDF LS831 70nV/Hz 70nV

    Untitled

    Abstract: No abstract text available
    Text: LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is


    Original     		PDF LS830 LS830

    FET U310

    Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
    Text: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW


    Original     		PDF U/J/SST308 350mW 500mW OT-23 FET U310 U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET

    Untitled

    Abstract: No abstract text available
    Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71


    Original     		PDF LS843 LS844 LS845 OT-23 400mW 25-year-old,

    LS845

    Abstract: No abstract text available
    Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET FEATURES ULTRA LOW NOISE en=3nV/Hz TYP. LOW LEAKAGE IG=15pA TYPs. LOW DRIFT I VGS1-2/TI=5µV/ºC max. ULTRA LOW OFFSET VOLTAGE IVGS1-2I=1mV max. ABSOLUTE MAXIMUM RATINGS SOIC-A TO-71


    Original     		PDF LS843 LS844 LS845 OT-23 400mW 25-year-old, LS845

    LSK170A

    Abstract: LSK170 LSK170C LSK170B replacement 2sk170 2SK170 2SK170 to92 LSK389 equivalent n-channel JFET sot23 jfet n channel ultra low noise
    Text: LSK170 ULTRA LOW NOISE SINGLE N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE f = 1kHz en = 0.9nV/√Hz HIGH BREAKDOWN VOLTAGE BVGSS = 40V max HIGH GAIN Yfs = 22mS (typ) HIGH INPUT IMPEDANCE IG = -500pA max LOW CAPACITANCE IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK170


    Original     		PDF LSK170 -500pA OT-23 2SK170 400mW LSK170A LSK170 LSK170C LSK170B replacement 2sk170 2SK170 2SK170 to92 LSK389 equivalent n-channel JFET sot23 jfet n channel ultra low noise

    replacement 2sk170

    Abstract: lsk170 2sk170 lsk389
    Text: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to


    Original     		PDF LSK170 2SK170 replacement 2sk170 lsk389

    2SK170

    Abstract: LSK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a
    Text: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to


    Original     		PDF LSK170 2SK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a

    ultra low igss pA

    Abstract: LS845 LS843 LS844 MONOLITHIC DUAL N-CHANNEL JFET SSG11
    Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		PDF LS843 LS844 LS845 ultra low igss pA LS845 MONOLITHIC DUAL N-CHANNEL JFET SSG11