A7628
Abstract: a1137 transistor a979 8055 transistor
Text: H Avantek Products Ultra-Low Noise Surface Mount Amplifier 2000 to 4000 MHz Technical Data PPA-4213 Features Description Pin Configuration • Ultra Low Noise: 1.2 dB Typ The PPA-4213 is low current, high gain, ultra-low noise RF amplifier using HP GaAs FET technology
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PPA-4213
PPA-4213
5963-3232E.
5963-4213E
A7628
a1137 transistor
a979
8055 transistor
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MAX6126
Abstract: APP3657 MAX4475 MAX8887 ultralownoise op-amp LDO application note AN3657 up/K 3657
Text: Maxim > App Notes > Amplifier and Comparator Circuits Power-Supply Circuits Keywords: low-dropout regulator, LDO, RC filter, voltage reference, low noise Dec 22, 2005 APPLICATION NOTE 3657 Ultra-Low-Noise LDO Achieves 6nV/√Hz Noise Performance Abstract: This ultra-low-noise LDO combines low-noise components with filtering to achieve an output noise
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MAX8887
100kHz
MAX8887,
MAX4475:
MAX6126:
com/an3657
AN3657,
APP3657,
Appnote3657,
MAX6126
APP3657
MAX4475
ultralownoise op-amp
LDO application note
AN3657
up/K 3657
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ULTRA LOW NOISE N-CHANNEL JFET
Abstract: Zener Diode 3v 400mW jfet n channel ultra low noise jfet transistor 2n4391 ultra low igss pA LS843 spice ultra low noise NPN transistor J210 spice Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET"
Text: LS843 LS844 LS845 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE en= 3nV/√Hz TYP. LOW LEAKAGE IG = 15pA TYPs. LOW DRIFT |∆VGS1-2 /∆T|= 5µV/°C max. ULTRA LOW OFFSET VOLTAGE ABSOLUTE MAXIMUM RATINGS NOTE 1
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LS843
LS844
LS845
ULTRA LOW NOISE N-CHANNEL JFET
Zener Diode 3v 400mW
jfet n channel ultra low noise
jfet transistor 2n4391
ultra low igss pA
LS843 spice
ultra low noise NPN transistor
J210 spice
Ultra High Input Impedance N-Channel JFET Amplifier
"DUAL N-Channel JFET"
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Untitled
Abstract: No abstract text available
Text: HMC606LC5 v04.0212 LOW NOISE AMPLIFIERS - SMT GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606LC5
HMC606LC5
25mm2
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Untitled
Abstract: No abstract text available
Text: HMC606LC5 v05.0514 LOW NOISE AMPLIFIERS - SMT GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606LC5
HMC606LC5
25mm2
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mmic distributed amplifier
Abstract: HMC606LC5
Text: HMC606LC5 v04.0212 LOW NOISE AMPLIFIERS - SMT GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606LC5
HMC606LC5
25mm2
mmic distributed amplifier
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Untitled
Abstract: No abstract text available
Text: HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606
HMC606
025mm
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117325
Abstract: No abstract text available
Text: HMC606LC5 v01.0807 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 5 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606LC5
HMC606LC5
25mm2
117325
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mmic distributed amplifier
Abstract: HMC606
Text: HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606
HMC606
025mm
mmic distributed amplifier
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mmic distributed amplifier
Abstract: V03120 HMC606LC5
Text: HMC606LC5 v03.1208 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 8 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606LC5
HMC606LC5
25mm2
mmic distributed amplifier
V03120
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Untitled
Abstract: No abstract text available
Text: HMC606 v01.0807 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606
HMC606
025mm
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HMC606LC5
Abstract: No abstract text available
Text: HMC606LC5 v02.1207 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - SMT 4 Typical Applications Features The HMC606LC5 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606LC5
HMC606LC5
25mm2
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HMC606
Abstract: No abstract text available
Text: HMC606 v02.0109 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606
HMC606
025mm
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Untitled
Abstract: No abstract text available
Text: HMC606 v01.0807 GaAs InGaP HBT MMIC ULTRA LOW PHASE NOISE, DISTRIBUTED AMPLIFIER, 2 - 18 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC606 is ideal for: Ultra Low Phase Noise: -160 dBc/Hz @ 10 kHz • Radar, EW & ECM P1dB Output Power: +15 dBm
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HMC606
HMC606
025mm
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A14129
Abstract: A1252 A2706
Text: H Avantek Products Low Noise Surface Mount Amplifier 2000 to 6000 MHz Technical Data PPA-6213 Features Description Pin Configuration • Ultra Low Noise: 2.0 dB Typ The PPA-6213 is low current, high gain, low noise RF amplifier using HP GaAs FET technology and
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PPA-6213
PPA-6213
PP-38
5963-3232E.
5963-2593E
A14129
A1252
A2706
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dielectric resonator oscillator
Abstract: PLDRO-10-7000-5P DIELECTRIC COAXIAL RESONATOR PLDRO-13
Text: PLDRO SERIES FEATURES • • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design
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D-296
dielectric resonator oscillator
PLDRO-10-7000-5P
DIELECTRIC COAXIAL RESONATOR
PLDRO-13
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"DUAL N-Channel JFET"
Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71
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LSK389
400mW
2SK389
"DUAL N-Channel JFET"
Dual N-Channel JFET
2n4117a equivalent
2SK389 equivalent
U405
JFET u404 spice
LSK389B
2N4119A equivalent
3N165 equivalent
LSK389A
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PLDRO-10-7000-5P
Abstract: No abstract text available
Text: PLDRO SERIES FEATURES • • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design
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D-296
PLDRO-10-7000-5P
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2SK170
Abstract: LSK170 ultra low idss 2SK170C JFET -40v LSK170C replacement 2sk170 2SK170 TO92 LSK389 equivalent lsk170a
Text: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to
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LSK170
2SK170
ultra low idss
2SK170C
JFET -40v
LSK170C
replacement 2sk170
2SK170 TO92
LSK389 equivalent
lsk170a
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replacement 2sk170
Abstract: lsk170 2sk170 lsk389
Text: LSK170 ULTRA LOW NOISE LOW CAPACITANCE J-FET Replace discontinued Toshiba 2SK170 with LSK170 The 2SK170 / LSK170 is a 1nV/√Hz low capacitance JFET Optimized to provide low noise at both high and low frequency with a narrow range of IDSS and low capacitance. The 2SK170 / LSK170’s low noise to
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LSK170
2SK170
replacement 2sk170
lsk389
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Untitled
Abstract: No abstract text available
Text: MGA-637P8 Ultra Low Noise, High Linearity Low Noise Amplifier Data Sheet Description Features Avago Technologies’ MGA-637P8 is an economical, easyto-use GaAs MMIC Low Noise Amplifier LNA . This LNA has low noise and high linearity achieved through the
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MGA-637P8
MGA-637P8
CDMA2000x)
AV02-2992EN
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Pldro
Abstract: dielectric resonator oscillator PLDRO-10-7000-5P
Text: M/TQS00216 ULTRA-LOW NOISE PHASE-LOCKED DIELECTRIC RESONATOR OSCILLATOR :EATURES • • • • Ultra-low phase noise Reference from 5 to 200 MHz Internal reference available Small package Low power consumption The Phase-Locked DRO PLDRO is designed for ultralow phase noise applications. It is a dual-loop design
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M/TQS00216
MITQS00216
Pldro
dielectric resonator oscillator
PLDRO-10-7000-5P
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avantek act
Abstract: ACT-161223
Text: Q ACT-161223 Ultra Low Noise Narrowband Amplifier 1.2 to 1.6 GHz avantek APPLICATIONS FEATURES L Band Telemetry Satellite Downlinks GPS, Marisat, etc. RF/IF Front Ends Low Signal Level Amplification • Ultra Low Noise Figure: 1.1 dB (Typ) • Narrow Frequency Range:
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ACT-161223
avantek act
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transistor 9009
Abstract: No abstract text available
Text: W h p ì HEW LETT mLïim P A C K A R D Avantek Products Ultra-Low Noise Surface Mount Amplifier 2000 to 4000 MHz Technical Data 1 PPA-4213 Description Features The PPA-4213 is low current, high gain, ultra-low noise RF amplifier using HP GaAs FET technology
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PPA-4213
PPA-4213
wei46
transistor 9009
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