A/smd diode t53
Abstract: No abstract text available
Text: PD -9.1668A International I R Rectifier IRG4ZC70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFREDa ultrafast,
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IRG4ZC70UD
SMD-10
A/smd diode t53
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Untitled
Abstract: No abstract text available
Text: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
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Untitled
Abstract: No abstract text available
Text: EDF1AM, EDF1BM, EDF1CM, EDF1DM www.vishay.com Vishay General Semiconductor Miniature Glass Passivated Ultrafast Bridge Rectifier FEATURES • UL recognition, file number E54214 • Ideal for printed circuit boards • Ultrafast reverse frequency recovery time
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E54214
22-B106
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: ULTRAFAST RECOVERY POWER RECTIFIER DIODE SML1200HIC-FB • 1200V, 8A Full Bridge Rectifier Configuration • Fast Reverse Recovery trr = 40ns • High Speed Low Loss Switching • Hermetic TO258D Isolated Package with Ceramic Seals • Switch Mode Power Supply applications
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SML1200HIC-FB
O258D
O258D
MO-078AA)
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"Power rectifier Diode"
Abstract: No abstract text available
Text: ULTRAFAST RECOVERY POWER RECTIFIER DIODE SML1200HIC-FB • 1200V, 8A Full Bridge Rectifier Configuration • Fast Reverse Recovery trr = 40ns • High Speed Low Loss Switching • Hermetic TO258D Isolated Package with Ceramic Seals • Switch Mode Power Supply applications
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SML1200HIC-FB
O258D
O258D
MO-078AA)
"Power rectifier Diode"
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IRG4BC20KD
Abstract: IGBT IRG4BC20KD IRGBC20KD2 transistor iqr
Text: PD -9.1509 International JQR Rectifier IRG4BC20KD PREUMNAHY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
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IRG4BC20KD
T0220A8
IRG4BC20KD
IGBT IRG4BC20KD
IRGBC20KD2
transistor iqr
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Untitled
Abstract: No abstract text available
Text: International I f â R Rectifier PD 9.1467D IRG4PC40UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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1467D
IRG4PC40UD
O-247AC
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Untitled
Abstract: No abstract text available
Text: PD -9.1677A International IOR Rectifier IRG4BC10UD PRELIMINARY UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC10UD
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD -9.1471A International IOR Rectifier IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4PC50UD
O-247AC
554S5
DDSfl51fl
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DIODE V97
Abstract: No abstract text available
Text: International IOR Rectifier PD 9.1571 IRG4RC10UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for medium operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode .
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IRG4RC10UD
140ns
DIODE V97
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IRG4PC40K
Abstract: irg4pc40kd
Text: PD -9.1584 International l R Rectifier IRG4PC40KD Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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O-247AC
IRG4PC40KD
IRG4PC40K
irg4pc40kd
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IRG4BC20KD-S
Abstract: No abstract text available
Text: PD-9.1598 International IGR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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IRG4BC20KD-S
IRG4BC20KD-S
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transistor IR 840
Abstract: OZ930
Text: International ZOR Rectifier PD 9.1449A IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC20UD
T0220AB
transistor IR 840
OZ930
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TRANSISTOR SMD 9bb
Abstract: TI 42A
Text: In te rn a tio n a l TOR Rectifier PD - 9.1627 IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
TRANSISTOR SMD 9bb
TI 42A
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Untitled
Abstract: No abstract text available
Text: PD 9.1449A International IOR Rectifier IRG4BC20UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC20UD
T0-220AB
S5452
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Untitled
Abstract: No abstract text available
Text: PD -9.1599 International K g l Rectifier IRG4BC20KD PREUMNARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz . and Short
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IRG4BC20KD
T0-220AB
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Untitled
Abstract: No abstract text available
Text: '«! PD -9.1598 International IQR Rectifier PRELIMINARY IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short
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IRG4BC20KD-S
5SM52
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DIODE RECTIFIER BRIDGE SINGLE 55a 600v
Abstract: IRG4PC50UD ir igbt BH rn transistor
Text: International Rectifier IOR PD -9.1471A IRG4PC50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4PC50UD
O-247AC
DIODE RECTIFIER BRIDGE SINGLE 55a 600v
IRG4PC50UD
ir igbt
BH rn transistor
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Untitled
Abstract: No abstract text available
Text: PD 9.1467D International IO R Rectifier IRG4PC40UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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1467D
IRG4PC40UD
O-247AC
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C2335
Abstract: No abstract text available
Text: International IOR Rectifier PD 9.1573 IRG4PH50UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode
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IRG4PH50UD
O-247AC
C2335
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Untitled
Abstract: No abstract text available
Text: PD 9.1453A International IO R Rectifier IRG4BC30UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
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IRG4BC30UD
T0-220AB
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rur660
Abstract: No abstract text available
Text: RURD660S9A_F085 Ultrafast Power Rectifier, 6A 600V Features 6A, 600V Ultrafast Rectifier • High Speed Switching trr=63ns(Typ. @ IF=6A ) The RURD660S9A_F085 is an ultrafast diode with soft recovery characteristics (trr< 83ns). It has a low forward voltage drop and is of silicon nitride passivated ionimplanted epitaxial planar construction. This device is
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RURD660S9A
rur660
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Untitled
Abstract: No abstract text available
Text: P D -9.1584 International IG R Rectifier IRG4PC40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 k H z , and Short
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IRG4PC40KD
O-247AC
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VQE 24
Abstract: IRG4PC40UD
Text: International IGR Rectifier PD 9.1467C IRG4PC40UD P R B iM IN A R Y INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast CoPack IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200
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1467C
IRG4PC40UD
O-247AC
VQE 24
IRG4PC40UD
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