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    Nexperia PMGD280UN,115

    MOSFET 2N-CH 20V 0.87A 6TSSOP
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    PMGD280UN,115 Reel 75,000 3,000
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    Mouser Electronics PMGD280UN,115 216,453
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    Rochester Electronics PMGD280UN,115 357,000 1
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    Chip 1 Exchange PMGD280UN,115 12,000
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    Avnet Silica PMGD280UN,115 6,000 8 Weeks 3,000
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    EBV Elektronik PMGD280UN,115 8 Weeks 3,000
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    NXP Semiconductors PMPB20UN,115

    MOSFET N-CH 20V 6.6A 6DFN
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    NXP Semiconductors PMF400UN,115

    MOSFET N-CH 30V 830MA SOT323-3
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    NXP Semiconductors PMDPB42UN,115

    MOSFET 2N-CH 20V 3.9A 6HUSON
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    Rochester Electronics PMDPB42UN,115 159,456 1
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    Rochester Electronics LLC PMDPB42UN,115

    MOSFET 2N-CH 20V 3.9A 6HUSON
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    UN11 Datasheets (108)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UN11004 Panasonic Circuit Protector Elements Original PDF
    UN11006 Panasonic Circuit Protector Elements Original PDF
    UN11008 Panasonic Circuit Protector Elements Original PDF
    UN11010 Panasonic Circuit Protector Elements Original PDF
    UN11015 Panasonic Circuit Protector Elements Original PDF
    UN11020 Panasonic Circuit Protector Elements Original PDF
    UN11027 Panasonic Circuit Protector Elements Original PDF
    UN1110 Panasonic Silicon PNP-transistor+integrated resistor Original PDF
    UN1110 Panasonic Silicon PNP epitaxial planer transistor Original PDF
    UN1110 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN1110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    UN1110Q Panasonic TRANS GP BJT PNP 50V 0.1A 3M Original PDF
    UN1110-Q Panasonic Silicon PNP epitaxial planer transistor Original PDF
    UN1110R Panasonic TRANS GP BJT PNP 50V 0.1A 3M Original PDF
    UN1110-R Panasonic Silicon PNP epitaxial planer transistor Original PDF
    UN1110S Panasonic TRANS GP BJT PNP 50V 0.1A 3M Original PDF
    UN1110-S Panasonic Silicon PNP epitaxial planer transistor Original PDF
    UN1111 Panasonic Silicon PNP-transistor+integrated resistor Original PDF
    UN1111 Panasonic Silicon PNP epitaxial planer transistor Original PDF
    UN1111 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    UN11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UN1118

    Abstract: XN1118
    Text: Composite Transistors XN1118 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1118 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original
    XN1118 UN1118 UN1118 XN1118 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts


    Original
    UNR111x UN111x UNR1110 UNR1111 UNR1112 PDF

    UNR1121

    Abstract: UNR1122 UNR1123 UNR1124 UNR112X UNR112Y
    Text: Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 1.0 0.4 1.5 R0.9 R0.9 ● ● ● ● ● ● UNR1121 UNR1122


    Original
    UNR1121/1122/1123/1124/112X/112Y UN1121/1122/1123/1124/112X/112Y) UNR1121 UNR1122 UNR1123 UNR1124 UNR112X UNR112Y UNR1121 UNR1122 UNR1123 UNR1124 UNR112X UNR112Y PDF

    UN1111

    Abstract: UNR1111 XN01111 XN1111
    Text: Composite Transistors XN01111 XN1111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1111(UN1111) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original
    XN01111 XN1111) UNR1111 UN1111) UN1111 XN01111 XN1111 PDF

    UN1114

    Abstract: UNR1114 XN01114 XN1114
    Text: Composite Transistors XN01114 XN1114 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1114(UN1114) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original
    XN01114 XN1114) UNR1114 UN1114) UN1114 XN01114 XN1114 PDF

    UN1112

    Abstract: UN1212 UNR1112 UNR1212 XP04312 XP4312
    Text: Composite Transistors XP04312 XP4312 Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1212(UN1212) + UNR1112(UN1112) • Absolute Maximum Ratings Parameter


    Original
    XP04312 XP4312) UNR1212 UN1212) UNR1112 UN1112) UN1112 UN1212 XP04312 XP4312 PDF

    UN1118

    Abstract: UNR1118 XN01118 XN1118
    Text: Composite Transistors XN01118 XN1118 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1118(UN1118) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original
    XN01118 XN1118) UNR1118 UN1118) UN1118 XN01118 XN1118 PDF

    UN1119

    Abstract: UN221N UNR1119 UNR221N XP04286
    Text: Composite Transistors XP04286 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR221N(UN221N)+UNR1119(UN1119) • Absolute Maximum Ratings Parameter 0 to 0.1


    Original
    XP04286 UNR221N UN221N) UNR1119 UN1119) UN1119 UN221N XP04286 PDF

    UN1116

    Abstract: UNR1116 XP04116 XP4116
    Text: Composite Transistors XP04116 XP4116 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1116(UN1116) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original
    XP04116 XP4116) UNR1116 UN1116) UN1116 XP04116 XP4116 PDF

    UN11015

    Abstract: UNH0115
    Text: Circuit Protector Elements UNH0115 UN11015 Circuit Protector Elements Unit: mm For overcurrent protection 2.5±0.1 6.9±0.1 (1.0) (1.0) (0.4) (1.5) • Absolute Maximum Ratings Ta = 25°C 2.4±0.2 1.0±0.1 0.5 max. 2.0±0.2 R 0.7 4.5±0.1 R 0.9 • Sharp cutoff characteristics and low voltage drop


    Original
    UNH0115 UN11015) UN11015 UNH0115 PDF

    UN111H

    Abstract: XN111H
    Text: Composite Transistors XN111H Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN111H x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original
    XN111H UN111H UN111H XN111H PDF

    UN1113

    Abstract: XP4113
    Text: Composite Transistors XP4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1113 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage


    Original
    XP4113 UN1113 UN1113 XP4113 PDF

    UN1114

    Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
    Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●


    Original
    111D/111E/111F/111H/111L UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 UN1119 UN1114 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118 PDF

    UN1115

    Abstract: XP6115
    Text: Composite Transistors XP6115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1115 x 2 elements • Absolute Maximum Ratings 1 : Emitter Tr1 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter Symbol Ratings


    Original
    XP6115 UN1115 UN1115 XP6115 PDF

    UN1113

    Abstract: UNR1113 XN01113 XN1113
    Text: Composite Transistors XN01113 XN1113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1113(UN1113) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original
    XN01113 XN1113) UNR1113 UN1113) UN1113 XN01113 XN1113 PDF

    UN1111

    Abstract: UNR1111 XP04111 XP4111
    Text: Composite Transistors XP04111 XP4111 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1111(UN1111) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage


    Original
    XP04111 XP4111) UNR1111 UN1111) UN1111 XP04111 XP4111 PDF

    UN1115

    Abstract: UNR1115 XP06115 XP6115
    Text: Composite Transistors XP06115 XP6115 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1115(UN1115) x 2 elements • Absolute Maximum Ratings 1 : Emitter (Tr1) 2 : Emitter (Tr2) 3 : Base (Tr2) (Ta=25˚C) Parameter


    Original
    XP06115 XP6115) UNR1115 UN1115) UN1115 XP06115 XP6115 PDF

    UN1112

    Abstract: XN1112
    Text: Composite Transistors XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1112 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element


    Original
    XN1112 UN1112 UN1112 XN1112 PDF

    UN1117

    Abstract: XP1117
    Text: Composite Transistors XP1117 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1117 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02


    Original
    XP1117 UN1117 UN1117 XP1117 PDF

    UN111F

    Abstract: XP111F
    Text: Composite Transistors XP111F Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN111F x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02


    Original
    XP111F UN111F UN111F XP111F PDF

    UN1112

    Abstract: UNR1112 XN01112 XN1112
    Text: Composite Transistors XN01112 XN1112 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 2.90+0.20 –0.05 1.9±0.1 0.16+0.10 –0.06 (0.95) (0.95) 2 1 10˚ 1.1+0.2 –0.1 • Basic Part Number of Element 0 to 0.1 UNR1112(UN1112) x 2 elements


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    XN01112 XN1112) UNR1112 UN1112) UN1112 XN01112 XN1112 PDF

    high voltage pnp

    Abstract: TA-75 UNR1121 UNR1122 UNR1123 UNR1124 UNR112X UNR112Y
    Text: Transistors with built-in Resistor UNR1121/1122/1123/1124/112X/112Y UN1121/1122/1123/1124/112X/112Y Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 6.9±0.1 ● ● ● ● ● (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ 0.27kΩ 3.1kΩ


    Original
    UNR1121/1122/1123/1124/112X/112Y UN1121/1122/1123/1124/112X/112Y) UNR1121 UNR1122 UNR1123 UNR1124 UNR112X UNR112Y high voltage pnp TA-75 UNR1121 UNR1122 UNR1123 UNR1124 UNR112X UNR112Y PDF

    UNH0108

    Abstract: UN11008
    Text: Circuit Protector Elements UNH0108 UN11008 Circuit Protector Elements Unit: mm 6.9±0.1 (1.0) • Features (1.0) 3.5±0.1 (1.5) R 0.9 M Di ain sc te on na tin nc ue e/ d • Sharp cutoff characteristics and low voltage drop • Flame retardant package and low heat generation.


    Original
    UNH0108 UN11008) UNH0108 UN11008 PDF

    SC59A

    Abstract: SC-59A RT1N441C RT1P441M RT1N434S RT1P441C RT1P441S UN111E UN111H UN112X
    Text: - 336 - Ta=25t , *Ef][iTc=25‘ C) m z tt ICvDC) « (V) RT1P434S RT1P441C =m =M RT1P441M HS RTÌP441S H S UN111D UN211H ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ST ♦ st ♦ST ♦ST ♦ST ♦ST ♦ST UN 2 i1L ft; UN211M UN111E U N I I IF


    OCR Scan
    RT1P134S RT1P441C T1P441M RT1P441S N111D UN111E SC-59A UN212Y 47K/10K UN211D SC59A RT1N441C RT1P441M RT1N434S UN111E UN111H UN112X PDF