UNDERSTANDING POWER TRANSISTORS BREAKDOWN PARAMETERS Search Results

UNDERSTANDING POWER TRANSISTORS BREAKDOWN PARAMETERS Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

UNDERSTANDING POWER TRANSISTORS BREAKDOWN PARAMETERS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
bipolar transistor 1500v Abstract: B50 data cables AVALANCHE TRANSISTOR AN-1628 Motorola germanium transistor pnp ferrite n27 Text: MOTOROLA AN1628 Order this document by AN1628/D SEMICONDUCTOR APPLICATION NOTE AN1628 Understanding Power Transistors Breakdown Parameters Prepared by: Michaël Bairanzade Application Engineer Motorola Semiconductors Toulouse, France CONTAINS: 1 BREAKDOWN MECHANISMS	Original	AN1628/D AN1628 AN1628 AN1628/D bipolar transistor 1500v B50 data cables AVALANCHE TRANSISTOR AN-1628 Motorola germanium transistor pnp ferrite n27	PDF
ferrite n27 Abstract: bipolar transistor tester germanium transistors NPN AN1628 GaAs tunnel diode germanium transistor pnp pnp germanium low power transistor POWER TRANSISTOR Cross AN-1628 Understanding Power Transistors Breakdown Parameters Text: AN1628/D Understanding Power Transistors Breakdown Parameters Prepared by: Michaël Bairanzade http://onsemi.com APPLICATION NOTE TUNNELING EFFECT When the electrical field approaches 106 V/cm in Silicon, a significant current begins to flow by means of the band to	Original	AN1628/D ferrite n27 bipolar transistor tester germanium transistors NPN AN1628 GaAs tunnel diode germanium transistor pnp pnp germanium low power transistor POWER TRANSISTOR Cross AN-1628 Understanding Power Transistors Breakdown Parameters	PDF
VN0106N9 Abstract: VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106 Text: Understanding MOSFET Data DMOS Application Note AN-D15 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon.	Original	AN-D15 VN0104/VN0106/VN0109 VN0104 VN0106 VN0109 VN0106N9 VN0109N5 VN0106N5 VN0106N2 VN0104N5 VN0104N2 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V N-Channel Depletion-Mode MOSFET high voltage VN0106N6 VN0106	PDF
AN1228 Abstract: "RF MOSFETs" AN1226 Text: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic	Original	AN1228 AN1226) AN1228 "RF MOSFETs" AN1226	PDF
LDMOS Abstract: AN1226 AN1228 Text: AN1228 APPLICATION NOTE RELATE LDMOS DEVICE PARAMETERS TO RF PERFORMANCE John Pritiskutch - Brett Hanson 1. ABSTRACT This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic	Original	AN1228 AN1226) LDMOS AN1226 AN1228	PDF
VN0109N5 Abstract: VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109 Text: DMOS Application Note AN-D15 3 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN0104/VN0106/VN0109 data sheet was chosen as an	Original	AN-D15 VN0104/VN0106/VN0109 VN0104 VN0106 VN0109 VN0109N5 VN0106N6 VN0109N2 AN-D15 VN0104 VN0104N3 VN0104N6 VN0106 VN0106N3 VN0109	PDF
"RF MOSFETs" Abstract: AN1226 AN1228 Text: AN1228 Application note How to relate LMOS device parameters to RF performance Introduction This second installment of a two-part paper series on LDMOS technology see Understanding LDMOS Device Fundamentals, AN1226 will explain LDMOS circuit-level performance through MOS intrinsic device characteristics. Understanding current laterally	Original	AN1228 AN1226) "RF MOSFETs" AN1226 AN1228	PDF
VN3205 equivalent Abstract: No abstract text available Text: DMOS Application Note AN-D15 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN3205 data sheet was chosen as an example because it	Original	AN-D15 VN3205 VN3205 VN3205 equivalent	PDF
VN3205N6 Abstract: AN-D15 VN3205 VN3205N3 VN3205N8 VN3205ND supertex mosfet Text: DMOS Application Note AN-D15 Understanding MOSFET Data The following outline explains how to read and use Supertex MOSFET data sheets. The approach is simple and care has been taken to avoid getting lost in a maze of technical jargon. The VN3205 data sheet was chosen as an example because it	Original	AN-D15 VN3205 VN3205 VN3205N6 AN-D15 VN3205N3 VN3205N8 VN3205ND supertex mosfet	PDF
curve tracer Abstract: BUK543-100A BUK553-100A Text: Philips Semiconductors PowerMOS Transistors All manufacturers of power MOSFETs provide a data sheet for every type produced. The purpose of the data sheet is primarily to give an indication as to the capabilities of a particular product. It is also useful for the purpose of	Original		PDF
D45 TRANSISTOR Abstract: power bjt advantages and disadvantages transistor 412 BUV98 compatible buv48 equivalent an363 ST Power bipolar transistors Selection guide MTBF IGBT module power transistor IGBT Designers Manual Text: APPLICATION NOTE POWER TRANSISTORS - DEVICES AND DATASHEETS by V. Sukumar ABSTRACT The purpose of this paper is to give a general overview of how to read a transistor specification. We will discuss bipolar transistors, power MOSFETs and IGBTs, and introduce some intelligent power	Original		PDF
shockley diode application Abstract: shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet Text: Application Note 23 Issue 2 March 1996 Zetex SPICE Models Understanding Model Parameters and Applications Limitations Neil Chadderton Introduction SPICE was originally developed as a simulation tool for Integrated Circuit design SPICE being an acronym for	Original	1970s. F632-79. shockley diode application shockley diode transistor bipolar driver schematic diode shockley shockley diode SPICE MODELS spice shockley diode SPICE MODELS AP 494 Application Note BF 494 C shockley diode datasheet	PDF
ACOS3 Abstract: mrf650 5bp transistor making AN1107/D AN1107 DIN45004B MHW5122A MHW5185 MRF942 NF50 Text: Order this document by AN1107/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1107 Understanding RF Data Sheet Parameters Prepared by: Norman E. Dye RF Products Division INTRODUCTION Data sheets are often the sole source of information about the capability and characteristics of a product. This is	Original	AN1107/D AN1107 ACOS3 mrf650 5bp transistor making AN1107/D AN1107 DIN45004B MHW5122A MHW5185 MRF942 NF50	PDF
DIN45004B Abstract: 806-940MHz ACOS3 MRF942 AN1107/D Design and construction Wave FM radio transmitter POWER TRANSISTOR CROSS RF NPN POWER TRANSISTOR C 10-12 GHZ uhf linear amplifier module motorola hybrid amplifier modules Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1107/D AN1107 NOTE: The theory in this application note is still applicable, but some of the products referenced may be discontinued. Understanding RF Data Sheet Parameters	Original	AN1107/D AN1107 DIN45004B 806-940MHz ACOS3 MRF942 AN1107/D Design and construction Wave FM radio transmitter POWER TRANSISTOR CROSS RF NPN POWER TRANSISTOR C 10-12 GHZ uhf linear amplifier module motorola hybrid amplifier modules	PDF

TRANSISTORS BJT list Abstract: bjt differential amplifier bjt differential amplifier application circuits BJT amplifiers input output bjt npn transistor pnp germanium low power bjt pnp germanium bjt jfet discrete differential transistor pnp germanium small signal bjt power BJT PNP Text: Application Report SLOA026A - April 2000 Understanding Basic Analog – Active Devices Ron Mancini Mixed Signal Products ABSTRACT This application report describes active devices and their use as the basic building blocks of all electronic equipment. Active devices, coupled with passive devices, create the	Original	SLOA026A TRANSISTORS BJT list bjt differential amplifier bjt differential amplifier application circuits BJT amplifiers input output bjt npn transistor pnp germanium low power bjt pnp germanium bjt jfet discrete differential transistor pnp germanium small signal bjt power BJT PNP	PDF
current fed push pull topology Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors Text: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors	Original	50/60Hz current fed push pull topology "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors	PDF
TRANSISTORS BJT list Abstract: "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP pnp germanium low power bjt Text: Understanding Basic Analog - Active Devices Application Report July 1999 Mixed Signal Products SLOA026 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information	Original	SLOA026 TRANSISTORS BJT list "BJT Transistors" BJT amplifiers bjt differential amplifier application circuits transistor BJT Driver Germanium Transistor SLOA026 pnp germanium small signal bjt power BJT PNP pnp germanium low power bjt	PDF
MD74SC540AC Abstract: MSAN-107 A43 ZENER DIODE Text:  Application Note MSAN-107 Understanding and Eliminating Latch-Up in CMOS Applications ISSUE 1 Contents • • • • • • • • • • • • • • Semiconductor Device Considerations Background on SCR’s Parasitic Bipolar Structures in the ISO-CMOS	Original	MSAN-107 MD74SC540AC MSAN-107 A43 ZENER DIODE	PDF
BUK553-100A Abstract: No abstract text available Text: Philips Semiconductors Understanding the Data Sheet PowerMOS Transistors usually given as either 150 "C or 175 "C. It is not recommended that the internal device temperature be allowed to exceed this figure. All manufacturers of power MOSFETs provide a data	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors PowerMOS Transistors All manufacturers of power MOSFETs provide a data sheet for every type produced. The purpose of the data sheet is primarily to give an indication astothe capabilities of a particular product. It is also useful for the purpose of	OCR Scan		PDF
BUK553-100A Abstract: No abstract text available Text: Philips Semiconductors PowerMOS Transistors All manufacturers of power MOSFETs provide a data sheet for every type produced. The purpose of the data sheet is primarily to give an indication as to the capabilities of a particular product. It is also useful for the purpose of	OCR Scan		PDF
AR120 Abstract: transistor crossover Text: AR120 ÏSIiüligSSIigiii •H SPEEDING UP THE VERY HIGH VOLTAGE TRANSISTOR ^#^^^Â ÎI^ftili\|^PPIl\|llpliiil\|i\|i^PII#lillSlli \|tffiÈÌ§NfM v -ï¥ ~ % By :i W arren Schultz gitili ""H B M IM M Motorola Inc. Semiconductor Products Division I^ I ËSIÊitiSÊÈâËttÈiSêÈÊ/IÎÎÊiÊSÊ	OCR Scan	AR120 AR120/D 1ATX18614-3 AR120 transistor crossover	PDF
flyback samsung Abstract: flyback transformer samsung Text: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the mid-70's, these devices have emerged as widely ac cepted components in medium-to-high frequency power control applications. Advances in Doubled Diffused MOS DMOS	OCR Scan	mid-70 flyback samsung flyback transformer samsung	PDF
flyback samsung Abstract: flyback 1000w SMPS 1000W smps design 1000w Text: INTRODUCTION TO SAMSUNG’S SFET FAMILY Since the introduction of the first Power MOSFET products in the m id-70’s, these devices have emerged as widely ac cepted components in mediunv-to-high frequency power control applications. Advances in Doubted Diffused MOS DMOS	OCR Scan	id-70 flyback samsung flyback 1000w SMPS 1000W smps design 1000w	PDF

UNDERSTANDING POWER TRANSISTORS BREAKDOWN PARAMETERS Search Results

UNDERSTANDING POWER TRANSISTORS BREAKDOWN PARAMETERS Result Highlights (5)

UNDERSTANDING POWER TRANSISTORS BREAKDOWN PARAMETERS Datasheets Context Search

bipolar transistor 1500v

ferrite n27

VN0106N9

AN1228

LDMOS

VN0109N5

"RF MOSFETs"

VN3205 equivalent

VN3205N6

curve tracer

D45 TRANSISTOR

shockley diode application

ACOS3

DIN45004B

TRANSISTORS BJT list

current fed push pull topology

TRANSISTORS BJT list

MD74SC540AC

BUK553-100A

Untitled

BUK553-100A

AR120

flyback samsung

flyback samsung