MRF247
Abstract: MOTOROLA 381 equivalent vk 200 amplifier mrf247
Text: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF247 The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.
|
Original
|
MRF247/D
MRF247
MRF247
MRF247/D
MOTOROLA 381 equivalent
vk 200
amplifier mrf247
|
PDF
|
amplifier mrf247
Abstract: MRF247 Capacitance j107 j113 equivalent mica capacitor Diode Motorola 316 mica trimmers capacitors
Text: MOTOROLA Order this document by MRF247/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF247 The MRF247 is designed for 12.5 Volt VHF large–signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz.
|
Original
|
MRF247/D
MRF247
MRF247
amplifier mrf247
Capacitance j107
j113 equivalent
mica capacitor
Diode Motorola 316
mica trimmers capacitors
|
PDF
|
MRF321
Abstract: ferroxcube 56-590-65
Text: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF Line NPN Silicon MRF321 RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range.
|
Original
|
MRF321
400MHz
1N4001
56-590-65/4B)
VK200-19/4B
MRF321
ferroxcube 56-590-65
|
PDF
|
DL110
Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF275L VK200 sony+IMX+179
Text: Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
|
Original
|
MRF275L/D
MRF275L
DL110
VK200 20/4B inductor
VK200 inductor of high frequencies
AN211A
MRF275L
VK200
sony+IMX+179
|
PDF
|
5251f
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET ARCHIVE INFORMATION Designed for broadband commercial and military applications using single
|
Original
|
MRF275L/D
MRF275L
5251f
|
PDF
|
VK200 19 4B INDUCTOR
Abstract: arco 462 capacitor capacitor 680 s12 diode VK200 4B inductor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
|
Original
|
MRF275L
VK200 19 4B INDUCTOR
arco 462 capacitor
capacitor 680
s12 diode
VK200 4B inductor
|
PDF
|
UNELCO
Abstract: S11 zener diode motorola MOSFET 935 AN211A MRF275L VK200 VK200 4B inductor
Text: MOTOROLA Order this document by MRF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power Field-Effect Transistor N–Channel Enhancement–Mode 100 W, 28 V, 500 MHz N–CHANNEL BROADBAND RF POWER FET Designed for broadband commercial and military applications using single
|
Original
|
MRF275L/D
MRF275L
UNELCO
S11 zener diode
motorola MOSFET 935
AN211A
MRF275L
VK200
VK200 4B inductor
|
PDF
|
transistor MRF321
Abstract: JMC5201 redcap erie redcap capacitors vk200 coil erie redcap vk200 1N4001 MRF321 case 244-04
Text: Order this document by MRF321/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF321 . . . designed primarily for wideband large–signal driver and predriver amplifier stages in 200–500 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc
|
Original
|
MRF321/D
MRF321
transistor MRF321
JMC5201
redcap
erie redcap capacitors
vk200 coil
erie redcap
vk200
1N4001
MRF321
case 244-04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode . . . designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
|
Original
|
MRF175LU/D
MRF175LU
MRF175LV
10orola
MRF175LU
MRF175LU/D*
|
PDF
|
inductor vk200
Abstract: VK200 20/4B inductor VK200 inductor of high frequencies AN211A MRF175LU MRF175LV VK200 J115 mosfet Nippon capacitors VK200 4B inductor
Text: MOTOROLA Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU MRF175LV N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
|
Original
|
MRF175LU/D
MRF175LU
MRF175LV
MRF175LU
MRF175LU/D*
inductor vk200
VK200 20/4B inductor
VK200 inductor of high frequencies
AN211A
MRF175LV
VK200
J115 mosfet
Nippon capacitors
VK200 4B inductor
|
PDF
|
MRF247
Abstract: mica trimmer capacitor unelco mica trimmer capacitor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line N PN Silico n RF Pow er T ransistor The M R F247 is designed for 12.5 Volt V H F large-signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics —
|
OCR Scan
|
MRF247
mica trimmer capacitor
unelco mica trimmer capacitor
|
PDF
|
mrf247
Abstract: amplifier mrf247 CAPACITOR SPRAGUE L5150
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor MRF247 The MRF247 is designed for 12.5 Volt VHF large-signal amplifier applications in industrial and commercial FM equipment operating to 175 MHz. • Specified 12.5 Volt, 175 MHz Characteristics —
|
OCR Scan
|
MRF247
MRF247
amplifier mrf247
CAPACITOR SPRAGUE
L5150
|
PDF
|
DV2820
Abstract: SD1902
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs Designed prim arily for w ideband large-signal output and driver from 3 0 -5 0 0 MHz. • Low C rss — 4.5 pF @ V ds = 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc
|
OCR Scan
|
MRF166C
MRF136,
DV2820,
BLF244,
SD1902,
ST1001
DV2820
SD1902
|
PDF
|
vk200 coil
Abstract: FERROXCUBE VK200 jmc 5201
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 1 0 Watts
|
OCR Scan
|
MRF321
vk200 coil
FERROXCUBE VK200
jmc 5201
|
PDF
|
|
|
jmc 5201
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPH Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 2 0 0 -5 0 0 MHz frequency range. • Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts
|
OCR Scan
|
MRF321
jmc 5201
|
PDF
|
TP2180
Abstract: RF POWER TRANSISTOR NPN, motorola arco TRIMMER capacitor arco TRIMMER capacitor 425 313 Motorola arco 423 trimmer
Text: 1 SÉ D I fc,3 b ? 2 S 4 MOTOROLA MOTOROLA SC GOflflaat, X S T R S /R T - S 3-13 s | F SEMICONDUCTOR TECHNICAL DATA TP2180 The RF Line V H F P o w e r T ra n sis to r 80 W — 88 M H z V H F POWER TRANSISTOR NPN SILICON Designed for use in 12.5 V VHF amplifiers operating under Class A, B or C conditions.
|
OCR Scan
|
TP2180
TP2180
RF POWER TRANSISTOR NPN, motorola
arco TRIMMER capacitor
arco TRIMMER capacitor 425
313 Motorola
arco 423 trimmer
|
PDF
|
vk200 coil
Abstract: jmc 5201 ferroxcube 56-590-65 VK200-19 FERROXCUBE VK200
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line NPN S ilico n RF P o w er T ran sisto r . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON
|
OCR Scan
|
MRF321
vk200 coil
jmc 5201
ferroxcube 56-590-65
VK200-19
FERROXCUBE VK200
|
PDF
|
FERROXCUBE VK200
Abstract: motorola zener mosfet j122 vk200 DV2820 VK200-19 VK-200-19 VK-200 BLF244 and equivalent j122 mosfet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF166 MRF166C The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily fo r wideband large-signal output and driver from 3 0 -5 0 0 MHz.
|
OCR Scan
|
MRF166C
MRF166)
MRF136,
DV2820,
BLF244,
SD1902,
ST1001
MRF166
MRF166C
RF166
FERROXCUBE VK200
motorola zener
mosfet j122
vk200
DV2820
VK200-19
VK-200-19
VK-200
BLF244 and equivalent
j122 mosfet
|
PDF
|
VK200 inductor of high frequencies
Abstract: VK200 INDUCTOR
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F175LV M R F175LU The RF MOSFET Line RF P o w er F ie ld -E ffe ct Transistors N-Channel Enhancement-Mode 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER FETs . . . designed for broadband commercial and military appli cations using single
|
OCR Scan
|
MRF175LV
MRF175LU
MRF175L
MRF175LV
MRF175LU
VK200 inductor of high frequencies
VK200 INDUCTOR
|
PDF
|
VK200 INDUCTOR
Abstract: inductor vk200 VK200 inductor of high frequencies
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband com m ercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
|
OCR Scan
|
RF175LU
MRF175LV
F175L
MRF175LU
MRF175LV
VK200 INDUCTOR
inductor vk200
VK200 inductor of high frequencies
|
PDF
|
MRF327
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF327 NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc Output Power = 80 Watts over 225 to 400 MHz Band
|
OCR Scan
|
80-mil-Thick
MRF327
|
PDF
|
J115 mosfet
Abstract: MRF175LU
Text: MOTOROLA SEM ICO NDU CTO R TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect T ransistors MRF175LU M RF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
|
OCR Scan
|
MRF175LU
MRF175LV
28cal
MRF175L
MRF175LU
MRF175LV
J115 mosfet
|
PDF
|
VK200 INDUCTOR
Abstract: inductor vk200
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power F ield -E ffect Transistors MRF175LU MRF175LV N-Channel Enhancement-Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and
|
OCR Scan
|
MRF175LU
MRF175LV
MRF175L
MRF175LU
MRF175LV
VK200 INDUCTOR
inductor vk200
|
PDF
|
trw RF POWER TRANSISTOR
Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .
|
OCR Scan
|
|
PDF
|
