Untitled
Abstract: No abstract text available
Text: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device
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500um
500um
350nm
1100nm
105/125MMF
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Untitled
Abstract: No abstract text available
Text: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum
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1100nm,
ld/si-pin-pd-500um-high-speed
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HSCH-9161
Abstract: United Detector silicon diode application note 979
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It
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HSCH-9161
HSCH-9161
5988-6209EN
AV02-3625EN
United Detector silicon diode
application note 979
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CME7660-203
Abstract: metal detector service manual CDP7624-207
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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J-STD-020)
200847D
CME7660-203
metal detector service manual
CDP7624-207
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bare die schottky diode
Abstract: CDB7619-000
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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J-STD-020)
200847E
bare die schottky diode
CDB7619-000
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HSCH-9161
Abstract: HSMS-2850 United Detector silicon diode
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through
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HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
March31,
HSMS-2850
United Detector silicon diode
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CME7660-000
Abstract: CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier and ZBD designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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J-STD-020)
200847C
CME7660-000
CDP7624-207
DDB2504-230
CME7660-207
CDB7620-203
200847C
DDB2503-000
DDB2503-230
DDB2503-250
DDB2504-000
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green
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DDC2354-000
Abstract: DDC2354-250 CDC7630-000 CDC7631-000 DDC2353-000 DDC2353-250
Text: DATA SHEET Zero Bias Silicon Schottky Barrier Detector Diodes Features ● ● High sensitivity Low video impedance Description Skyworks series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K band. The choice of barrier metal and process
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Quality Technologies optocouplers
Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8030
MOC8050
MOC8030
MOC8050
MOC8030)
MOC8050)
E90700
SS16/1,
HP19-3EY
00035A
Quality Technologies optocouplers
B613
IC 1296
QT OPTOELECTRONICS
PONT DIODE
0884 qt
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMSA7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode Automotive Applications • In-Vehicle WiFi @ 2.4 GHz and 5.0 GHz Infotainment Navigation Garage door openers Wireless control systems Telematics Features
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SMSA7630-061:
AEC-Q101
SMSA7630-061
ISO/TS16949
03200A
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Untitled
Abstract: No abstract text available
Text: High Performance Schottky Diodes Ultraminiature 0201 Surface Mount Technology Packaging Skyworks Solutions Skyworks Solutions, Inc. is an innovator of high reliability analog semiconductors. Leveraging core technologies, Skyworks offers high performance analog products supporting automotive,
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BRO365-12A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green MSL-1 @
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J-STD-020
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Abstract: No abstract text available
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W & CNX83A.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W & CNX83A.W consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. FEATURES 0.270 6.86 0.240 (6.10)
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CNX82A
CNX83A
E90700)
200024C
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a140mW
Abstract: H11B815 4pin diode
Text: 4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 4 FEATURES • Compact 4-pin package • Current Transfer Ratio: 600% minimum at IF = 1 mA
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H11B815
H11B815
E90700)
00029A
a140mW
4pin diode
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DDB2265-230
Abstract: DDB2265-250 DDB2503-220 DDB2503-230 DDB2503-250 DDB2504-220 DDB2504-230 DDB2504-250 pin diode model spice x band diode detector waveguide
Text: data sheet Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads Applications l D etectors Features l l l l l B oth P-type and N-type low barrier silicon available L ow 1/f noise B onded junctions for reliability P lanar passivated beam-lead and chip construction
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications • Detectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip design Planar passivated beam-lead and chip construction
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SQ04-0074.
200847H
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gold detector circuit free
Abstract: CDB7619-000 CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000
Text: DATA SHEET Silicon Schottky Diode Chips Applications ● ● Detectors Mixers Features Low capacitance for usage beyond 40 GHz ZBD and low-barrier designs ● P-type and n-type junctions ● Large bond pad chip design ● Lead Pb -free, RoHS-compliant, and Green
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CDB7619-000
Abstract: CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000
Text: DATA SHEET CDB, CDC, CDF Series: Silicon Schottky Diode Chips Applications x Detectors x Mixers Features x Low capacitance for use beyond 40 GHz x ZBD and low barrier designs x P-type and n-type junctions x Large bond pad chip design x Packages rated MSL1, 260 qC per JEDEC J-STD-020
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J-STD-020)
200139G
CDB7619-000
CDB7620-000
CDC7630-000
CDC7631-000
CDF7621-000
CDF7623-000
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United Detector Technology Photodiodes
Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
Text: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS
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T-41-53
T-41-53
850nm
850nm/1kHz
0V/50Q
PIN-10D
050x0
P/N-125DPL
PIN-220D,
PIN-220DP
United Detector Technology Photodiodes
United Detector Technology
United Detector Technology, silicon photodiode
United Detector silicon photodiode
PIN-3DP
United Detector Technology photodiode
601 Opto isolator
PIN-25D
United Detector Technology 10dp
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6953-B
Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
Text: ML 4000 SERIES EQUIVALENT PARTS LIST The majority o f C.V. register and commercial microwave diodes can be provided depending on demand. M/A-COM Ltd also provides a second source of direct equivalents to other manufacturers devices, the majority o f which are approved for space use. A comprehensive equivalents list is provided below.
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ML40464
ML40462
ML40461
ML4649-30
ML4650-30
ML4649-56
ML4650-56
6953-B
7812A
AH413
700201
CV2154
AH370
ML40150
DH 408 diode
dmf 612
14094 b
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tunnel junction diode
Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Text: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.
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sufficient800
tunnel junction diode
tunnel diode high frequency
metal detectors circuit
"tunnel diode" chip assembly
Detectors - Diode
ml7700
TUNNEL DIODE
diode tunnel
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L40205
Abstract: No abstract text available
Text: ML 4000 SERIES SILICON SCHOTTKY DETECTOR DIODES These low barrier diodes are suitable for use in waveguide, coaxial and stripline applications. They feature high sensitivity, and low I/F noise. These diodes are listed by increasing frequency, grouped by package style and T„. Other
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L40053
L40052
L40064
L40063
L40261
L40260
L40202
L40204
L40201
L40203
L40205
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