United Detector Technology Photodiodes
Abstract: United Detector Technology United Detector Technology, silicon photodiode United Detector silicon photodiode PIN-3DP PIN-10D United Detector Technology photodiode 601 Opto isolator PIN-25D United Detector Technology 10dp
Text: PIN SERIES PLANAR-DIFFUSED SILICON PHOTODIODES LJ UNITED DETECTOR TECHNOLOGY 9310987 UNITED DEÍECTOR UNITED V 64C 0 0 7 8 7 "bM DETECTOR T-41-53 BICHA 7 □ 00D 7fl? h | ~ PIN SERIES PLANAR-DIFFUSED SILICON F •f ! M • D SERIES PIN PHOTODIODE SPECIFICATIONS
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T-41-53
T-41-53
850nm
850nm/1kHz
0V/50Q
PIN-10D
050x0
P/N-125DPL
PIN-220D,
PIN-220DP
United Detector Technology Photodiodes
United Detector Technology
United Detector Technology, silicon photodiode
United Detector silicon photodiode
PIN-3DP
United Detector Technology photodiode
601 Opto isolator
PIN-25D
United Detector Technology 10dp
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6953-B
Abstract: 7812A AH413 700201 CV2154 AH370 ML40150 DH 408 diode dmf 612 14094 b
Text: ML 4000 SERIES EQUIVALENT PARTS LIST The majority o f C.V. register and commercial microwave diodes can be provided depending on demand. M/A-COM Ltd also provides a second source of direct equivalents to other manufacturers devices, the majority o f which are approved for space use. A comprehensive equivalents list is provided below.
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ML40464
ML40462
ML40461
ML4649-30
ML4650-30
ML4649-56
ML4650-56
6953-B
7812A
AH413
700201
CV2154
AH370
ML40150
DH 408 diode
dmf 612
14094 b
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Untitled
Abstract: No abstract text available
Text: Laser Diodes 500um General PurposePhotoDiodes Silicon PhotoDiodes 1 mmDiameter Diameter InGaAs PD-LD Inc. offers a 500um diameter photoconductive Silicon Photodiode suitable for applications requiring response times of up to 6nsec. The planar diffused device
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500um
500um
350nm
1100nm
105/125MMF
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Untitled
Abstract: No abstract text available
Text: Laser Diodes Standard-Area Silicon PIN Photodiodes 500µm PD-LD Inc. offers a variety of standard and custom PIN Photodiodes and APDs in fiber coupled packages. The semiconductors offered are of proven manufacture and design. Our Silicon devices cover the optical spectrum
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1100nm,
ld/si-pin-pd-500um-high-speed
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tunnel junction diode
Abstract: tunnel diode high frequency metal detectors circuit "tunnel diode" chip assembly Detectors - Diode ml7700 TUNNEL DIODE diode tunnel
Text: DETECTORS ML 7700-0000 Series DETECTORS 0.1 TO 18.0 GHz FEATURES ♦ Schottky & Tunnel Diode ♦ Limiter Detectors ♦ Broad Frequency Ranges ♦ High Sensitivities ♦ Coaxial & Drop-in DESCRIPTION The M /A -CO M Ltd detector range uses both silicon based Schottky barrier diodes and germ anium based tunnel diodes.
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sufficient800
tunnel junction diode
tunnel diode high frequency
metal detectors circuit
"tunnel diode" chip assembly
Detectors - Diode
ml7700
TUNNEL DIODE
diode tunnel
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HSCH-9161
Abstract: United Detector silicon diode application note 979
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Features Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through 110 GHz. It
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HSCH-9161
HSCH-9161
5988-6209EN
AV02-3625EN
United Detector silicon diode
application note 979
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CME7660-203
Abstract: metal detector service manual CDP7624-207
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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J-STD-020)
200847D
CME7660-203
metal detector service manual
CDP7624-207
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bare die schottky diode
Abstract: CDB7619-000
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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J-STD-020)
200847E
bare die schottky diode
CDB7619-000
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HSCH-9161
Abstract: HSMS-2850 United Detector silicon diode
Text: HSCH-9161 Zero Bias Beamlead Detector Diode Data Sheet Description Avago’s HSCH-9161 is a GaAs beamlead detector diode, fabricated using the modified barrier integrated diode MBID process[1]. This diode is designed for zero bias detecting applications at frequencies through
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HSCH-9161
HSCH-9161
5988-5907EN
5988-6209EN
March31,
HSMS-2850
United Detector silicon diode
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CME7660-000
Abstract: CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier and ZBD designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
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J-STD-020)
200847C
CME7660-000
CDP7624-207
DDB2504-230
CME7660-207
CDB7620-203
200847C
DDB2503-000
DDB2503-230
DDB2503-250
DDB2504-000
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green
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DDC2354-000
Abstract: DDC2354-250 CDC7630-000 CDC7631-000 DDC2353-000 DDC2353-250
Text: DATA SHEET Zero Bias Silicon Schottky Barrier Detector Diodes Features ● ● High sensitivity Low video impedance Description Skyworks series of packaged, beam-lead and chip zero bias Schottky barrier detector diodes are designed for applications through K band. The choice of barrier metal and process
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Quality Technologies optocouplers
Abstract: B613 IC 1296 QT OPTOELECTRONICS MOC8030 MOC8050 PONT DIODE 0884 qt
Text: PHOTODARLINGTON OPTOCOUPLERS Preliminary NO BASE CONNECTION MOC8030 MOC8050 DESCRIPTION PACKAGE DIMENSIONS The MOC8030 and MOC8050 are photodarlington-type optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor.
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MOC8030
MOC8050
MOC8030
MOC8050
MOC8030)
MOC8050)
E90700
SS16/1,
HP19-3EY
00035A
Quality Technologies optocouplers
B613
IC 1296
QT OPTOELECTRONICS
PONT DIODE
0884 qt
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SMSA7630-061: Surface Mount, 0201 Zero Bias Silicon Schottky Detector Diode Automotive Applications • In-Vehicle WiFi @ 2.4 GHz and 5.0 GHz Infotainment Navigation Garage door openers Wireless control systems Telematics Features
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SMSA7630-061:
AEC-Q101
SMSA7630-061
ISO/TS16949
03200A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green MSL-1 @
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J-STD-020
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CDB7619-000
Abstract: CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000 United Detector silicon diode
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green
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Untitled
Abstract: No abstract text available
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W & CNX83A.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W & CNX83A.W consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. FEATURES 0.270 6.86 0.240 (6.10)
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CNX82A
CNX83A
E90700)
200024C
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a140mW
Abstract: H11B815 4pin diode
Text: 4-PIN PHOTODARLINGTON OPTOCOUPLERS H11B815 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package. 4 4 FEATURES • Compact 4-pin package • Current Transfer Ratio: 600% minimum at IF = 1 mA
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H11B815
H11B815
E90700)
00029A
a140mW
4pin diode
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DDB2265-230
Abstract: DDB2265-250 DDB2503-220 DDB2503-230 DDB2503-250 DDB2504-220 DDB2504-230 DDB2504-250 pin diode model spice x band diode detector waveguide
Text: data sheet Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam-Leads Applications l D etectors Features l l l l l B oth P-type and N-type low barrier silicon available L ow 1/f noise B onded junctions for reliability P lanar passivated beam-lead and chip construction
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Barrier Diode Bondable Chips and Beam Leads Applications • Detectors Mixers Features Available in both P-type and N-type low barrier designs Low 1/f noise Large bond pad chip design Planar passivated beam-lead and chip construction
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SQ04-0074.
200847H
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gold detector circuit free
Abstract: CDB7619-000 CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000
Text: DATA SHEET Silicon Schottky Diode Chips Applications ● ● Detectors Mixers Features Low capacitance for usage beyond 40 GHz ZBD and low-barrier designs ● P-type and n-type junctions ● Large bond pad chip design ● Lead Pb -free, RoHS-compliant, and Green
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L40205
Abstract: No abstract text available
Text: ML 4000 SERIES SILICON SCHOTTKY DETECTOR DIODES These low barrier diodes are suitable for use in waveguide, coaxial and stripline applications. They feature high sensitivity, and low I/F noise. These diodes are listed by increasing frequency, grouped by package style and T„. Other
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L40053
L40052
L40064
L40063
L40261
L40260
L40202
L40204
L40201
L40203
L40205
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CDB7619-000
Abstract: CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000
Text: DATA SHEET CDB, CDC, CDF Series: Silicon Schottky Diode Chips Applications x Detectors x Mixers Features x Low capacitance for use beyond 40 GHz x ZBD and low barrier designs x P-type and n-type junctions x Large bond pad chip design x Packages rated MSL1, 260 qC per JEDEC J-STD-020
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J-STD-020)
200139G
CDB7619-000
CDB7620-000
CDC7630-000
CDC7631-000
CDF7621-000
CDF7623-000
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