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    UNITRODE TRANSISTORS Search Results

    UNITRODE TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    UNITRODE TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF510 12v led switch

    Abstract: SCHEMATIC WITH irfp460 IRFP460 application IRFP460 SWITCHING FREQUENCY UFN150 pin configuration irf510 Power MOSFET u-118 IRF 510 IRFP460 UC3706
    Text: U-118 ul B UNITRODE APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. ABSTRACT Although touted as a high impedance, voltage controlled device,


    Original
    U-118 UC3705, UC3706, UC3707 UC3709 IRF510 12v led switch SCHEMATIC WITH irfp460 IRFP460 application IRFP460 SWITCHING FREQUENCY UFN150 pin configuration irf510 Power MOSFET u-118 IRF 510 IRFP460 UC3706 PDF

    DS0026 power mosfet driver

    Abstract: IRFP460 application IRF510 12v led switch IN5820 UFN150 u 118 pin configuration irf510 Power MOSFET gate drive pulse transformer high voltage gate drive transformer SCHEMATIC WITH irfp460
    Text: U-118 ul B UNITRODE APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. ABSTRACT Although touted as a high impedance, voltage controlled device,


    Original
    U-118 UC3705, UC3706, UC3707 UC3709 DS0026 power mosfet driver IRFP460 application IRF510 12v led switch IN5820 UFN150 u 118 pin configuration irf510 Power MOSFET gate drive pulse transformer high voltage gate drive transformer SCHEMATIC WITH irfp460 PDF

    UFN320

    Abstract: C1347 MOS 6509
    Text: UNITRODE CORP 9347963 T5 UNITRODE CORP 1 1 ^ ^ 3 4 7 ^ 3 OOlObMfl 92D 10648 d POWER MOSFET TRANSISTORS r - ^ w UFN320 UFN321 UFN322 UFN323 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


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    UFN320 UFN321 UFN322 UFN323 high-sp100 0D10t UFN320 UFN321 C1347 MOS 6509 PDF

    ufn250

    Abstract: UFN253
    Text: T2 UNITRODE CORP 9347963 UNITRODE DQIOLHE ? ^ 92D CORP D 10642 UFN250 UFN251 UFN252 UFN253 POWER MOSFET TRANSISTORS r 3? 1 3 200 Volt, 0.085 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.


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    UFN250 UFN251 UFN252 UFN253 UFN251 UFN253 PDF

    MOS 6509

    Abstract: 400v 50A DIODE
    Text: UNITRODE CORP 9347963 TS UNITRODE CORP DGlDbbQ 1 920 10660 DT' ^ /i POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel UFN342 UFN343 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available, This efficient design achieves a very low Rosiom and a high transconductance.


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    UFN342 UFN343 UFN341 UFN340 MOS 6509 400v 50A DIODE PDF

    UFN232

    Abstract: ufn230
    Text: UNITRODE CORP 9347963 TE 92D UNITRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel c1 3 4 7 ci b 3 G D lG t,3 D 10630 U-jz UFN230 UFN231 UFN232 UFN233 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


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    UFN230 UFN231 UFN232 UFN233 UFN231 PDF

    ufn730

    Abstract: UFN731
    Text: UNITRODE CORP 9347963 M | cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.


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    UFN730 UFN731 UFN732 UFN733 PDF

    Unitrode transistors data To5

    Abstract: UC195 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode
    Text: UNITRODE CORP/UNITRODE IN T E G R A T E D y IC “ F Smart Power Transistor UNITRODE FEATURES • Greater Than 1.0A Output • 3-OjuA Typical Base Current • 500ns Switching Time • 2.0V Saturation • Directly Interfaces with CMOS or TTL • Internal Thermal Limiting


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    500ns O-257 UC295 UC395 UC195/UC395 0Q12M03 UC195 Unitrode transistors data To5 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode PDF

    2n6800

    Abstract: saft rectifier
    Text: UNITRODE CORP 9347963 TE3 UNITRODE CORP De " | 92D 10578 POWER MOSFET TRANSISTORS 1T 4 00 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 0Ü10S7Ô


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    2N6800 2N6799 2N6800 saft rectifier PDF

    UNITRODE TRANSISTORS

    Abstract: No abstract text available
    Text: HIGH-RELIABILITY POWER DEVICES BY API ELECTRONICS, Including Unitrode Power Transistors and Darlingtons


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    PDF

    d773

    Abstract: diode sy 710 sy 710 diode
    Text: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling


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    UFN823 d773 diode sy 710 sy 710 diode PDF

    UFND1Z0

    Abstract: unitrode stackable rectifier UNITRODE TRANSISTORS UFND1Z3
    Text: UNITRODE CORP 9347963 TE UNITRODE CORP DE^'T3 4 7 Tk3 QD1 D7 T1 2 92D 10791 J.T-25- POWER MOSFET TRANSISTORS UFND1Z0 100 Volt, 2.4 Ohm N-Channel UFND1Z3 FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current


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    T-25- -758Voss UFND1Z0 unitrode stackable rectifier UNITRODE TRANSISTORS UFND1Z3 PDF

    F422

    Abstract: F423 F421 F-423 ir f422 UFNF422
    Text: UNITRODE CORP 9347963 TS UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10875 UFNF420 UFNF421 UFNF422 UFNF423 POWER MOSFET TRANSISTORS 500 Volt, 3.0 Ohm FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


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    D01Gfl75 UFNF420 UFNF421 UFNF422 UFNF423 UFNF423 F422 F423 F421 F-423 ir f422 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP 9347963 T2 ï Ëf| ‘ìBHYTbB DGlDb3t. 1 92D UN I TRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.2 Ohm N-Channel 10636 D T 39-13 UFN240 UFN241 UFN242 UFN243 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.


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    UFN240 UFN241 UFN242 UFN243 UFN240 UFN241 PDF

    2N6770

    Abstract: No abstract text available
    Text: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability


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    2N6769 2N6770 001D523 2N6770 PDF

    DFC-3

    Abstract: No abstract text available
    Text: "TE UNITRODE CORP 9347963 UNITRODE CORP 1 1^^347^3 92D POWER MOSFET TRANSISTORS 10833 D UFNF130 UFNF131 UFNF132 UFNF133 100 Volt, 0.18 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


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    UFNF130 UFNF131 UFNF132 UFNF133 UFNF131 UFNF130 DFC-3 PDF

    UFN841

    Abstract: UFN041 mosfet ir 840 features Hjc 22
    Text: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown


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    T347Tb3 D01D7Ô UFN842 UFN843 UFN841 UFN041 mosfet ir 840 features Hjc 22 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP 9347963 T2 UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10572 D 2N6797 JTX, JTXV 2N6798 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


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    GD1D572 2N6797 2N6798 1347Tk PDF

    Untitled

    Abstract: No abstract text available
    Text: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-'*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology


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    D/-37-' UFN1130 PDF

    UFN541

    Abstract: ufn540 FN540 k96a UFN543 UFN542 FN541
    Text: TH 0G10714 t UNITRODE CORP 9347963 UNITRODE 92D CORP POWER MOSFET TRANSISTORS 100 Volt, 0.085 Ohm N-Channel FEATURES • C o m p act Plastic Package • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second B reakdow n 10714 UFN540 UFN541


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    0G10714 UFN540 UFN541 UFN542 UFN543 FN543 FN540 k96a UFN543 FN541 PDF

    ufn720

    Abstract: UFN723 UFN721 15AQ
    Text: UFN720 UFN721 UFN722 UFN723 POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance. The Unitrode power MOSFET features all of the advantages of MOS technology such as


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    UFN720 UFN721 UFN722 UFN723 UFN720 UFN721 UFN722 UFN723 15AQ PDF

    1G747

    Abstract: No abstract text available
    Text: UNITRODE CO RP 9347963 TE TS UNITRODE CORP D eT n |347ib3 DE 92D 10744 □□10744 4 D T '7 1 -1 POWER MOSFET TRANSISTORS 400 Volt, 3.6 Ohm N-Channel FEATURES • Compact Plastic Package » Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown


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    347ib3 UFN712 UFN713 1G747 PDF

    Untitled

    Abstract: No abstract text available
    Text: T2 UNITRODE CORP 9347963 UNITRODE DE I ^ 3 4 7 ^ 3 □□10bû4 1 CORP 92D 10684 D f i- 3 J - / J POWER MOSFET TRANSISTORS 500 Volt, 0.85 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability


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    UFN442 UFN443 swi61 UFN441 UFN440 PDF

    10561-D

    Abstract: cib47
    Text: UNITRODE CORP 9347963 UNITRODE T5 CORP DlT| =1347^3 DQlGShG 92D POWER MOSFET. TRANSISTORS 500 Volt, 3.0 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive Current • Ease of P a ra llelin g • N o Second B reakdow n • Excellent T em p e ra tu re Stability


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    2N6794 2N6796 10561-D cib47 PDF