IRF510 12v led switch
Abstract: SCHEMATIC WITH irfp460 IRFP460 application IRFP460 SWITCHING FREQUENCY UFN150 pin configuration irf510 Power MOSFET u-118 IRF 510 IRFP460 UC3706
Text: U-118 ul B UNITRODE APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. ABSTRACT Although touted as a high impedance, voltage controlled device,
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U-118
UC3705,
UC3706,
UC3707
UC3709
IRF510 12v led switch
SCHEMATIC WITH irfp460
IRFP460 application
IRFP460 SWITCHING FREQUENCY
UFN150
pin configuration irf510 Power MOSFET
u-118
IRF 510
IRFP460
UC3706
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PDF
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DS0026 power mosfet driver
Abstract: IRFP460 application IRF510 12v led switch IN5820 UFN150 u 118 pin configuration irf510 Power MOSFET gate drive pulse transformer high voltage gate drive transformer SCHEMATIC WITH irfp460
Text: U-118 ul B UNITRODE APPLICATION NOTES NEW DRIVER ICs OPTIMIZE HIGH SPEED POWER MOSFET SWITCHING CHARACTERISTICS Bill Andreycak UNITRODE Integrated Circuits Corporation, Merrimack, N.H. ABSTRACT Although touted as a high impedance, voltage controlled device,
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U-118
UC3705,
UC3706,
UC3707
UC3709
DS0026 power mosfet driver
IRFP460 application
IRF510 12v led switch
IN5820
UFN150
u 118
pin configuration irf510 Power MOSFET
gate drive pulse transformer
high voltage gate drive transformer
SCHEMATIC WITH irfp460
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PDF
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UFN320
Abstract: C1347 MOS 6509
Text: UNITRODE CORP 9347963 T5 UNITRODE CORP 1 1 ^ ^ 3 4 7 ^ 3 OOlObMfl 92D 10648 d POWER MOSFET TRANSISTORS r - ^ w UFN320 UFN321 UFN322 UFN323 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN320
UFN321
UFN322
UFN323
high-sp100
0D10t
UFN320
UFN321
C1347
MOS 6509
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PDF
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ufn250
Abstract: UFN253
Text: T2 UNITRODE CORP 9347963 UNITRODE DQIOLHE ? ^ 92D CORP D 10642 UFN250 UFN251 UFN252 UFN253 POWER MOSFET TRANSISTORS r 3? 1 3 200 Volt, 0.085 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN250
UFN251
UFN252
UFN253
UFN251
UFN253
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PDF
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MOS 6509
Abstract: 400v 50A DIODE
Text: UNITRODE CORP 9347963 TS UNITRODE CORP DGlDbbQ 1 920 10660 DT' ^ /i POWER MOSFET TRANSISTORS 400 Volt, 0.55 Ohm N-Channel UFN342 UFN343 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available, This efficient design achieves a very low Rosiom and a high transconductance.
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UFN342
UFN343
UFN341
UFN340
MOS 6509
400v 50A DIODE
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UFN232
Abstract: ufn230
Text: UNITRODE CORP 9347963 TE 92D UNITRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel c1 3 4 7 ci b 3 G D lG t,3 D 10630 U-jz UFN230 UFN231 UFN232 UFN233 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN230
UFN231
UFN232
UFN233
UFN231
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PDF
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ufn730
Abstract: UFN731
Text: UNITRODE CORP 9347963 M | cî347cib3 DDlG7Sb UNITRODE CORP 92D 10756 POWER MOSFET TRANSISTORS UFN730 UFN731 UFN732 UFN733 400 Volt, 1.0 Ohm N-Channel FEATU R ES D E S C R IP T IO N • • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN730
UFN731
UFN732
UFN733
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PDF
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Unitrode transistors data To5
Abstract: UC195 on 614 TO3 power transistor UC395 transistor 257 transistor 257 isolated unitrode
Text: UNITRODE CORP/UNITRODE IN T E G R A T E D y IC “ F Smart Power Transistor UNITRODE FEATURES • Greater Than 1.0A Output • 3-OjuA Typical Base Current • 500ns Switching Time • 2.0V Saturation • Directly Interfaces with CMOS or TTL • Internal Thermal Limiting
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500ns
O-257
UC295
UC395
UC195/UC395
0Q12M03
UC195
Unitrode transistors data To5
on 614 TO3 power transistor
UC395
transistor 257
transistor 257 isolated
unitrode
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2n6800
Abstract: saft rectifier
Text: UNITRODE CORP 9347963 TE3 UNITRODE CORP De " | 92D 10578 POWER MOSFET TRANSISTORS 1T 4 00 Volt, 1.0 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability 0Ü10S7Ô
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2N6800
2N6799
2N6800
saft rectifier
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PDF
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UNITRODE TRANSISTORS
Abstract: No abstract text available
Text: HIGH-RELIABILITY POWER DEVICES BY API ELECTRONICS, Including Unitrode Power Transistors and Darlingtons
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d773
Abstract: diode sy 710 sy 710 diode
Text: T2 UNITRODE CORP 9347963 Ï F | c]347i:ib3 □ OlOVL.fl 7 | ~ 92D UNITRODE CORP 10768 D r POWER MOSFET TRANSISTORS t S 500 Volt, 3.0 Ohm N-Channel UFN 822 UFN823 FEATURES • Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN823
d773
diode sy 710
sy 710 diode
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PDF
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UFND1Z0
Abstract: unitrode stackable rectifier UNITRODE TRANSISTORS UFND1Z3
Text: UNITRODE CORP 9347963 TE UNITRODE CORP DE^'T3 4 7 Tk3 QD1 D7 T1 2 92D 10791 J.T-25- POWER MOSFET TRANSISTORS UFND1Z0 100 Volt, 2.4 Ohm N-Channel UFND1Z3 FEATURES • For Automatic Insertion • Compact, End Stackable • Fast Switching • Low Drive Current
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T-25-
-758Voss
UFND1Z0
unitrode stackable rectifier
UNITRODE TRANSISTORS
UFND1Z3
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PDF
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F422
Abstract: F423 F421 F-423 ir f422 UFNF422
Text: UNITRODE CORP 9347963 TS UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10875 UFNF420 UFNF421 UFNF422 UFNF423 POWER MOSFET TRANSISTORS 500 Volt, 3.0 Ohm FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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D01Gfl75
UFNF420
UFNF421
UFNF422
UFNF423
UFNF423
F422
F423
F421
F-423
ir f422
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PDF
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP 9347963 T2 ï Ëf| ‘ìBHYTbB DGlDb3t. 1 92D UN I TRODE CORP POWER MOSFET TRANSISTORS 200 Volt, 0.2 Ohm N-Channel 10636 D T 39-13 UFN240 UFN241 UFN242 UFN243 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available.
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UFN240
UFN241
UFN242
UFN243
UFN240
UFN241
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PDF
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2N6770
Abstract: No abstract text available
Text: T2 UNITRODE CORP 9347963 UNITRODE 0G1D5E0 4 ï ~ CORP 92D 10520 POWER MOSFET TRANSISTORS 2N6769 J, JTX, JTXV 2N6770 500 Volt, 0.4 Ohm N-Channel FEA TU RES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Tem perature Stability
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2N6769
2N6770
001D523
2N6770
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PDF
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DFC-3
Abstract: No abstract text available
Text: "TE UNITRODE CORP 9347963 UNITRODE CORP 1 1^^347^3 92D POWER MOSFET TRANSISTORS 10833 D UFNF130 UFNF131 UFNF132 UFNF133 100 Volt, 0.18 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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UFNF130
UFNF131
UFNF132
UFNF133
UFNF131
UFNF130
DFC-3
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PDF
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UFN841
Abstract: UFN041 mosfet ir 840 features Hjc 22
Text: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown
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T347Tb3
D01D7Ô
UFN842
UFN843
UFN841
UFN041
mosfet ir 840 features
Hjc 22
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PDF
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP 9347963 T2 UNITRODE CORP DE 1 ^ 3 4 7 ^ 3 92D 10572 D 2N6797 JTX, JTXV 2N6798 POWER MOSFET TRANSISTORS 200 Volt, 0.4 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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GD1D572
2N6797
2N6798
1347Tk
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PDF
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Untitled
Abstract: No abstract text available
Text: UNITRODE CORP iS 9347963 DE § ^ 3 4 7 ^ 3 GDlD7flb •=] U N I T R O D E CORP 92D 10786 POWER MOSFET TRANSISTORS D/-37-'*' UFN1130 700 Volt, 3.5 Ohm N-Channel FEATURES DESCRIPTION This new Unitrode power MOSFET utilizes the latest high voltage advanced technology
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D/-37-'
UFN1130
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PDF
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UFN541
Abstract: ufn540 FN540 k96a UFN543 UFN542 FN541
Text: TH 0G10714 t UNITRODE CORP 9347963 UNITRODE 92D CORP POWER MOSFET TRANSISTORS 100 Volt, 0.085 Ohm N-Channel FEATURES • C o m p act Plastic Package • Fast Sw itching • Low Drive C urrent • Ease of Paralleling • No Second B reakdow n 10714 UFN540 UFN541
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0G10714
UFN540
UFN541
UFN542
UFN543
FN543
FN540
k96a
UFN543
FN541
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PDF
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ufn720
Abstract: UFN723 UFN721 15AQ
Text: UFN720 UFN721 UFN722 UFN723 POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosum and a high transconductance. The Unitrode power MOSFET features all of the advantages of MOS technology such as
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UFN720
UFN721
UFN722
UFN723
UFN720
UFN721
UFN722
UFN723
15AQ
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PDF
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1G747
Abstract: No abstract text available
Text: UNITRODE CO RP 9347963 TE TS UNITRODE CORP D eT n |347ib3 DE 92D 10744 □□10744 4 D T '7 1 -1 POWER MOSFET TRANSISTORS 400 Volt, 3.6 Ohm N-Channel FEATURES • Compact Plastic Package » Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown
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347ib3
UFN712
UFN713
1G747
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PDF
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Untitled
Abstract: No abstract text available
Text: T2 UNITRODE CORP 9347963 UNITRODE DE I ^ 3 4 7 ^ 3 □□10bû4 1 CORP 92D 10684 D f i- 3 J - / J POWER MOSFET TRANSISTORS 500 Volt, 0.85 Ohm N-Channel FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown • Excellent Temperature Stability
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UFN442
UFN443
swi61
UFN441
UFN440
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PDF
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10561-D
Abstract: cib47
Text: UNITRODE CORP 9347963 UNITRODE T5 CORP DlT| =1347^3 DQlGShG 92D POWER MOSFET. TRANSISTORS 500 Volt, 3.0 Ohm N-Channel FEATURES • Fast Sw itching • Low Drive Current • Ease of P a ra llelin g • N o Second B reakdow n • Excellent T em p e ra tu re Stability
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2N6794
2N6796
10561-D
cib47
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PDF
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