Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111H Silicon PNP epitaxial planar type For digital circuits • Package M Di ain sc te on na tin nc ue e/ d ■ Features ■ Basic Part Number • UNR211H x 2 Parameter
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2002/95/EC)
XP0111H
UNR211H
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UNR211H
Abstract: XP0111H
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111H Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package ■ Features ■ Basic Part Number • UNR211H x 2 Parameter
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2002/95/EC)
XP0111H
UNR211H
UNR211H
XP0111H
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UNR211H
Abstract: XN0111HG
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111HG Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For switching/digital circuits • Package ■ Features ■ Basic Part Number • UNR211H x 2
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2002/95/EC)
XN0111HG
UNR211H
UNR211H
XN0111HG
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PDF
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UNR211H
Abstract: XP0111H
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111H Silicon PNP epitaxial planar type For digital circuits • Package ■ Features • UNR211H x 2 • Code SMini5-G1 • Pin Name 1: Base (Tr1) 2: Emitter 3: Base (Tr2)
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2002/95/EC)
XP0111H
UNR211H
UNR211H
XP0111H
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UNR211H
Abstract: XN0111HG
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111HG Silicon PNP epitaxial planar type For switching/digital circuits • Package ■ Features • UNR211H x 2 • Code Mini5-G2 • Pin Name 1: Collector (Tr1) 2: Collector (Tr2)
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2002/95/EC)
XN0111HG
UNR211H
UNR211H
XN0111HG
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unr211
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95)
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2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
unr211
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MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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PDF
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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UNR2110
Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud
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2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2119
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UNR2119
Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Text: Transistors with built-in Resistor UNR211x Series UN211x Series Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2119
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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ic 2114
Abstract: ic 2113 211d ic 2115 UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor
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E/211F/211H/211L/211M/211N/211T/211V/211Z
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
10knductor
ic 2114
ic 2113
211d
ic 2115
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
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UN211H
Abstract: UNR211H XN0111H XN111H
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111H (XN111H) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 0.16+0.10 –0.06 M Di ain sc te on na tin nc ue e/ d 2 1.1+0.2 –0.1
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XN0111H
XN111H)
UN211H
UNR211H
XN0111H
XN111H
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UN211H
Abstract: UNR211H XN0111H XN111H
Text: Composite Transistors XN0111H XN111H Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
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XN0111H
XN111H)
UN211H
UNR211H
XN0111H
XN111H
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UN2111
Abstract: ic 2115 ic 2114 UNR211N UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115
Text: Transistors with built-in Resistor UNR21XX Series UN21XX Series Silicon PNP epitaxial planer transistor Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.95) (0.95) 1.9±0.1 (0.65) • Costs can be reduced through downsizing of the equipment and
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UNR21XX
UN21XX
UN2111
ic 2115
ic 2114
UNR211N
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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UN211H
Abstract: UNR211H XP0111H XP111H TA-250-4
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP0111H (XP111H) Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP0111H
XP111H)
UNR211H
UN211H)
UN211H
UNR211H
XP0111H
XP111H
TA-250-4
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UNR2110
Abstract: UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and
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2002/95/EC)
UNR211x
UN211x
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2119
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN0611FH XN611FH Silicon PNP epitaxial planar transistor Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 2 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number 1.1+0.2 –0.1 Symbol Rating Unit VCBO −50 V VCEO −50 V IC −100
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XN0611FH
XN611FH)
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN0111H (XN111H) Silicon PNP epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Basic Part Number 2 0.4±0.2 5 2.8+0.2 –0.3 • Two elements incorporated into one package
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2002/95/EC)
XN0111H
XN111H)
UNR211H
UN211H)
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PDF
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UNR2111
Abstract: UNR2113 UNR2110 UNR2112 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118 UNR2119
Text: Transistors with built-in Resistor / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z / 211D/211E/211F/211H/211L/211M/211N/211T/211V/211Z Silicon PNP epitaxial planer transistor
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E/211F/211H/211L/211M/211N/211T/211V/211Z
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2111
UNR2113
UNR2110
UNR2112
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
UNR2119
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PDF
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2-11d
Abstract: UNR2110 UNR2111 UNR2112 UNR2113 UNR2114 UNR2115 UNR2116 UNR2117 UNR2118
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR211x Series (UN211x Series) Silicon PNP epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou
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2002/95/EC)
UNR211x
UN211x
2-11d
UNR2110
UNR2111
UNR2112
UNR2113
UNR2114
UNR2115
UNR2116
UNR2117
UNR2118
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PDF
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UN211H
Abstract: UNR211H XP0111H XP111H
Text: Composite Transistors XP0111H XP111H Silicon PNP epitaxial planar type Unit: mm (0.425) For switching/digital circuits 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
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XP0111H
XP111H)
UNR211H
UN211H)
UN211H
UNR211H
XP0111H
XP111H
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PDF
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