MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
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PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
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ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04214G Silicon NPN epitaxial planar type For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
UP04214G
UNR2210
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04210 (XN4210) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se pla m d m des
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2002/95/EC)
XN04210
XN4210)
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UN2210
Abstract: UNR2210 XP01210 XP1210
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01210 (XP1210) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP01210
XP1210)
UN2210
UNR2210
XP01210
XP1210
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UN2210
Abstract: UNR2210 XP04210 XP4210
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP04210 (XP4210) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits 0.2±0.05 6 Unit: mm 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP04210
XP4210)
UN2210
UNR2210
XP04210
XP4210
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04210 (XN4210) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 0.4±0.2 1 0.30+0.10 –0.05 0.50+0.10 –0.05 • Basic Part Number
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2002/95/EC)
XN04210
XN4210)
UNR2210
UN2210)
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IC DATE CODE
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04216G Silicon NPN epitaxial planar type For switching/digital circuits • Features Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP04216G
UNR2210
IC DATE CODE
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UNR2210
Abstract: XP01210
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01210 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
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2002/95/EC)
XP01210
UNR2210
UNR2210
XP01210
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UNR2210
Abstract: XP06210
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP06210 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
XP06210
UNR2210
UNR2210
XP06210
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UN2210
Abstract: UNR2210 XP01210 XP1210
Text: Composite Transistors XP01210 XP1210 Silicon NPN epitaxial planar type (0.425) For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor)
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XP01210
XP1210)
UN2210
UNR2210
XP01210
XP1210
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou
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2002/95/EC)
UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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UNR2210
Abstract: XP02210
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP02210 Silicon NPN epitaxial planar type For digital circuits • Package • Two elements incorporated into one package (Base-coupled transistors with built-in resistor)
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2002/95/EC)
XP02210
UNR2210
UNR2210
XP02210
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and
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2002/95/EC)
UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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UNR2210
Abstract: UNR2211 UNR2212 UNR2213 UNR2214 UNR2215 UNR2216 UNR2217 UNR2218 UNR2219
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors with built-in Resistor UNR221x Series (UN221x Series) Silicon NPN epitaxial planar type Unit: mm 0.40+0.10 –0.05 For digital circuits 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Costs can be reduced through downsizing of the equipment and
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2002/95/EC)
UNR221x
UN221x
UNR2210
UNR2211
UNR2212
UNR2213
UNR2214
UNR2215
UNR2216
UNR2217
UNR2218
UNR2219
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04210G Silicon NPN epitaxial planar type For switching/digital circuits • Features Package Two elements incorporated into one package (Transistors with built-in resistor)
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2002/95/EC)
UP04210G
UNR2210
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP01210 (XP1210) Silicon NPN epitaxial planar type (0.425) For switching/digital circuits Unit: mm 0.20±0.05 5 0.12+0.05 –0.02 4 5˚ • Two elements incorporated into one package
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2002/95/EC)
XP01210
XP1210)
UNR2210
UN2210)
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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UNR2210
Abstract: UP04215G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04215G Silicon NPN epitaxial planar type For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
UP04215G
UNR2210
UNR2210
UP04215G
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UNR2210
Abstract: XP02210 marking code cl 9Q
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XP02210 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For digital circuits • Package • Two elements incorporated into one package (Base-coupled transistors with built-in resistor)
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2002/95/EC)
XP02210
UNR2210
UNR2210
XP02210
marking code cl 9Q
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UNR2210
Abstract: UP04213G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04213G Silicon NPN epitaxial planar type For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
UP04213G
UNR2210
UNR2210
UP04213G
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UN2210
Abstract: UNR2210 XN04210 XN4210
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN04210 (XN4210) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d 6 2 0.30+0.10 –0.05 0.50+0.10 –0.05
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2002/95/EC)
XN04210
XN4210)
UN2210
UNR2210
XN04210
XN4210
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UP04216G
Abstract: UNR2210
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04216G Silicon NPN epitaxial planar type For switching/digital circuits • Package Two elements incorporated into one package (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half
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2002/95/EC)
UP04216G
UNR2210
UP04216G
UNR2210
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