UNR8231A Search Results

UNR8231A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UNR8231A		Panasonic	Silicon NPN epitaxial planer transistor with biult-in resistor		Original	PDF
UNR8231A		Panasonic	NPN Transistor with built-in Resistor		Original	PDF
UNR8231A		Panasonic	Silicon NPN Epitaxial Planar Type Transistor		Original	PDF

UNR8231A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UNR8231 Abstract: UNR8231A Text: Transistors with built-in Resistor UNR8231/UNR8231A UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 0.7 • Absolute Maximum Ratings Parameter Collector to base voltage (Ta=25˚C) Symbol UNR8231 UNR8231A UNR8231 Collector to emitter voltage UNR8231A	Original	PDF	UNR8231/UNR8231A UN8231/UN8231A) UNR8231 UNR8231A UNR8231 UNR8231A
UNR8231 Abstract: UNR8231A Text: Transistors with built-in Resistor UNR8231/UNR8231A UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 0.7 4.0 0.8 ● 0.65 max. 14.5±0.5 High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and	Original	PDF	UNR8231/UNR8231A UN8231/UN8231A) UNR8231 UNR8231A UNR8231 UNR8231A
2sc5929 Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
UNR8231 Abstract: UNR8231A Text: Transistors with built-in Resistor UNR8231/8231A UN8231/8231A Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) M Di ain sc te on na tin nc ue e/ d (1.0) (0.2) 4.5±0.1 0.7 • Features 0.65 max. 14.5±0.5 (1.0) ue pl d in an c se ed lud	Original	PDF	UNR8231/8231A UN8231/8231A) UNR8231 UNR8231A
2SC5936 Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928 Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and	Original	PDF	XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
UNR8231 Abstract: UNR8231A Text: Transistors with built-in Resistor UNR8231/8231A UN8231/8231A Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 • Features 0.65 max. 14.5±0.5 (1.0) • High forward current transfer ratio hFE • Resistor built-in type, allowing downsizing of the equipment	Original	PDF	UNR8231/8231A UN8231/8231A) UNR8231 UNR8231A UNR8231 UNR8231A
Untitled Abstract: No abstract text available Text: Transistors with built-in Resistor UNR8231/8231A UN8231/8231A Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 • Features 0.65 max. 14.5±0.5 (1.0) M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE	Original	PDF	UNR8231/8231A UN8231/8231A) UNR8231 UNR8231A UNR8231A