backward-curved
Abstract: Centrifugal fans backward curved M2D 068-BF
Text: version 2013-05 EC/AC centrifugal fans – RadiCal The engineer’s choice EC/AC centrifugal fans – RadiCal Impellers made of high-tech compound material with optimised flow con- This opens up entirely new possibilities for applications in ventilation and
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Frequency Mixer - ZMX-7GHR Frequency Mixers Notes: • +17 dBm LO, up to +14 dBm RF • Absolute maximum power, voltage and current ratings: a. RF power, 200mW b. Peak IF current, 40mA print this page LO Power Level 17 dBm
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200mW
3700-7lick
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Frequency Mixer - ZMX-7GMH Frequency Mixers Notes: • +13 dBm LO, up to +9 dBm RF • Absolute maximum power, voltage and current ratings: a. RF power, 200mW b. Peak IF current, 40mA print this page LO Power Level 13 dBm
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200mW
3700lick
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Frequency Mixer - ZMX-7GR Frequency Mixers Notes: • +7dBm LO, up to +1 dBm RF • Absolute maximum power, voltage and current ratings: a. RF power, 50mW b. Peak IF current, 40mA print this page • General Quality Control Procedures and
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ATA6614
Abstract: 62512 RAM 64k x 8 62512 sram sram 62512 sram 62512 512k x 16 62512 RAM MA 6216 IEC 61082 IEC 62391 MT 6253
Text: General Features • Single-package Fully-integrated AVR 8-bit Microcontroller with LIN Transceiver and • • • • • • 5V Regulator Very Low Current Consumption in Sleep Mode 32Kbytes Flash Memory for Application Program Supply Voltage Up to 40V Operating Voltage: 5V to 27V
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32Kbytes
QFN48,
ATA6614
ATA6630,
62512 RAM 64k x 8
62512 sram
sram 62512
sram 62512 512k x 16
62512 RAM
MA 6216
IEC 61082
IEC 62391
MT 6253
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9680501
Abstract: No abstract text available
Text: SN54AHC04, SN74AHC04 HEX INVERTERS SCLS231L – OCTOBER 1995 – REVISED SEPTEMBER 2002 D Operating Range 2-V to 5.5-V VCC Latch-Up Performance Exceeds 250 mA Per JESD 17 SN54AHC04 . . . J OR W PACKAGE SN74AHC04 . . . D, DB, DGV, N, NS, OR PW PACKAGE TOP VIEW
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SN54AHC04,
SN74AHC04
SCLS231L
000-V
A114-A)
A115-A)
SN54AHC04
SN74AHC04
9680501
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Untitled
Abstract: No abstract text available
Text: Mini-Circuits - Specification for Frequency Mixer - ZMX-7GLHR Frequency Mixers Notes: • +10 dBm LO, up to +5 dBm RF • Absolute maximum power, voltage and ZMX-7GLHR current ratings: a. RF power, 50mW b. Peak IF current, 40mA print this page LO Power Level 10 dBm
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PIR MOTION SENSOR
Abstract: PIR motion sensor light wiring diagram Simple Knock Alarm With Piezo Sensor PIR motion DETECTOR block DIAGRAM COMET L PIR movement sensor pir direction GLASS BREAK sensor microwave intruder alarm sensor pir PIR motion DETECTOR CIRCUIT DIAGRAM
Text: Issued July 1994 C17941 Intruder detectors Compact passive infra-red intruder detector RS stock no 625-299 The RS compact passive infra-red intruder detector will detect the movement of people up to distances of 12 or 30 metres, depending upon the type of lens selected,
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C17941
PIR MOTION SENSOR
PIR motion sensor light wiring diagram
Simple Knock Alarm With Piezo Sensor
PIR motion DETECTOR block DIAGRAM
COMET L PIR
movement sensor pir direction
GLASS BREAK sensor
microwave intruder alarm
sensor pir
PIR motion DETECTOR CIRCUIT DIAGRAM
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transistor A1267
Abstract: A1268 a1267 Q62702-A1268 a1261 A1267 transistor Q62702-A1267 Q62702-A1261 VSO05561
Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W VSO05561 BAR 63-06W Type Marking Ordering Code Pin Configuration
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3-04W
3-05W
VSO05561
3-06W
Q62702-A1261
OT-323
Q62702-A1267
transistor A1267
A1268
a1267
Q62702-A1268
a1261
A1267 transistor
Q62702-A1267
Q62702-A1261
VSO05561
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BAR63
Abstract: Q62702-A1038 a1038 transistor BR diode A1038 BAR63-04 BAR64 Q62702-A1036 Q62702-A1037 Q62702-A1039
Text: BAR 63. Silicon PIN Diode l PIN diode for high speed switching of RF signals l Low forward resistance l Very low capacitance l For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4 G5 G6 Q62702-A1036
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OT-23
Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
BAR63
BAR63-04
BAR63
Q62702-A1038
a1038 transistor
BR diode
A1038
BAR64
Q62702-A1036
Q62702-A1037
Q62702-A1039
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Untitled
Abstract: No abstract text available
Text: BAR 63. Silicon PIN Diodes 3 PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance 2 For frequencies up to 3 GHz 1 BAR 63-04 BAR 63-05 BAR 63-06 3 3 3 1 2 VPS05161 1 2 EHA07005 1 2 EHA07006 EHA07004 Type Marking
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VPS05161
EHA07005
EHA07006
EHA07004
OT-23
EHD07138
100MHz
EHB07147
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Pin diode G4S
Abstract: SOT-23 2.D
Text: BAR 63 . Silicon PIN Diodes 3 • PIN diode for high speed switching of RF signals • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63 BAR 63-04 BAR 63-05 1 3 BAR 63-06 3 3 3 1 2 EHA07002 VPS05161 1 2 EHA07005 1
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EHA07002
VPS05161
EHA07005
EHA07006
EHA07004
OT-23
EHB07145
Pin diode G4S
SOT-23 2.D
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Pin diode G4S
Abstract: VSO05561
Text: BAR 63 . W Silicon PIN Diode 3 • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance 2 • For frequencies up to 3 GHz 1 BAR 63-04W BAR 63-05W C1/A2 3 BAR 63-06W C1/C2 A1/A2 3 3 1 2 1 2 1 2 A1 C2 A1 A2 C1
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3-04W
3-05W
3-06W
VSO05561
EHA07181
EHA07179
EHA07187
OT-323
Pin diode G4S
VSO05561
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uP 6308 AD
Abstract: TDA 6316 IMS2620-12 673104 673104A
Text: • ■ C 6 7 3 1 0 4 A l Advanced Micro Devices 1-Megabit Dynamic RAM Controller/Driver DISTINCTIVE CHARACTERISTICS ■ Supports up to 1 M DRAMs ■ Capable of addressing up to 16 M bytes ■ On-chip capacitive-load drivers capable of driving up to 88 DRAMs with 30-nsec typical
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30-nsec
35-nsec
150-nsec
673eter)
tpoF32
4060-017A
73104A
uP 6308 AD
TDA 6316
IMS2620-12
673104
673104A
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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M82C59A-2
Abstract: m82c59a M80C66 M82C59A2 271059 M62C
Text: INTEL CORP UP/PRPHLS 15E I M02L>17 5 00715MM 4 I inteT M82C59A t -52-33-13 CHMOS PROGRAMMABLE INTERRUPT CONTROLLER Pin Compatible with NMOS M8259A Fully Static Design Eight-Level Priority Controller Single 5V Power Supply Expandable to 64 Levels Programmable Interrupt Modes
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00715MM
M82C59A
28-Lead
M8259A
M80C86
M8080/85/86
st071Sb2
M82C59A-2
M80C66
M82C59A2
271059
M62C
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D1805A
Abstract: SONY E1AJ C-3 sony dsp CXD1185CQ CXD1806AQ MA10 MA11 MA12 MA13 MA15
Text: SONY CXD 1806A Q CD-ROM DECODER Description CXD1806AQ is a CD-ROM decoder LSI. Features • Compatible with CD-ROM, CD-I and CD-ROM XA formats • Real time error correction • Capable of handling playback up to quadruple speed • Multiblock auto-transfer function
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CXD1806AQ
CXD1806AQ
8688MHz
8688MHz)
128K-byte)
512K-byte)
CXD1B06AQ
gfp1d0-p-1420-a
D1805A
SONY E1AJ C-3
sony dsp
CXD1185CQ
MA10
MA11
MA12
MA13
MA15
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Untitled
Abstract: No abstract text available
Text: SCIENTIFIC/ P1INI-CIRCUITS HTE D • fiObfifill 0001473 fiT4 * S C C broadband, high dynamic range '7z :? H ~ o ci Frequency Mixers LEVEL 13 +13 dBm LO, up to Model TUF-2MH +9 dBm RF computer-automated performance data typical production unit / for data of other models consult factory
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel G3 G4
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Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
OT-23
BAR63-04
fi235fci05
EHD07139
fl23SbOS
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type Marking Ordering code tape and reel BAR 63 BAR 63-04 BAR 63-05 BAR 63-06 G3 G4
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Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
OT-23
BAR63
BAR63-04
fl235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAR 63. W Silicon PIN Diode >PIN diode for high speed switching of RF signal »Low forward resistance >Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C1/C2 A1/A2 EL -0 - nr TJ nr nr Marking Ordering Code Pin Configuration
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3-04W
3-05W
3-06W
Q62702-A1261
Q62702-A1267
Q62702-A1268
OT-323
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BAR 63. Silicon PIN Diode • • • • PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz Type BAR BAR BAR BAR 63 63-04 63-05 63-06 Marking Ordering code tape and reel
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Q62702-A1036
Q62702-A1037
Q62702-A1038
Q62702-A1039
OT-23
BAR63
BAR63
BAR63-04
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Pin diode G4S
Abstract: marking g4s Q62702-A1261
Text: SIEMENS BAR 63. W Silicon PIN Diode • PIN diode for high speed switching of RF signal • Low forward resistance • Very low capacitance • For frequencies up to 3 GHz BAR 63-04W BAR 63-05W BAR 63-06W C 1 /A 2 M /A2 ill m . / LJ \ . M Cl C2 eHA0718>
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3-04W
3-05W
3-06W
eHA0718>
3-04W
3-05W
Q62702-A1261
Q62702-A1267
Q62702-A1268
Pin diode G4S
marking g4s
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6331-1 prom
Abstract: No abstract text available
Text: Generic NiCR PROM Fam ily 53/63XXX-1 53/63XXX-2 F eatures/ Benefit Description • From 256 Bit to 8192 Bit memory The 53/63XX series generic PROM fam ily offers a w ide selection of size and organizations. The 4-bit w ide PROMs range from 256x4 to 2048x4 and feature up w ard/dow nw ard pin out com
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53/63XXX-1
53/63XXX-2
53/63XX
256x4
2048x4
1024x8
24-pin
6331-1 prom
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