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    Panasonic Electronic Components UP0421600L

    TRANS PREBIAS DUAL NPN SSMINI6
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    UP04216 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UP04216 Panasonic Composite Device - Composite Transistors Original PDF
    UP0421600L Panasonic Transistors (BJT) - Arrays, Pre-Biased, Discrete Semiconductor Products, TRANS PREBIAS DUAL NPN SSMINI6 Original PDF

    UP04216 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IC DATE CODE

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04216G Silicon NPN epitaxial planar type For switching/digital circuits • Features  Package  Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF 2002/95/EC) UP04216G UNR2210 IC DATE CODE

    UP04216G

    Abstract: UNR2210
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04216G Silicon NPN epitaxial planar type For switching/digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)  Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) UP04216G UNR2210 UP04216G UNR2210

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04216G Silicon NPN epitaxial planar type For switching/digital circuits • Package  Two elements incorporated into one package (Transistors with built-in resistor)  Reduction of the mounting area and assembly cost by one half


    Original     		PDF 2002/95/EC) UP04216G UNR2210

    UNR2210

    Abstract: UP04216G
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP04216G Silicon NPN epitaxial planar type For switching/digital circuits • Features  Package  Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF 2002/95/EC) UP04216G UNR2210 UP04216G

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    UP04210

    Abstract: UP04211 UP04213 UP04214 UP04215 UP04216
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0421x Series Silicon NPN epitaxial planar type Unit : mm 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d • Features 1 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05


    Original     		PDF 2002/95/EC) UP0421x UP04210 UP04211 UP04213 UP04214 UP04215 UP04216

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0421x Series Silicon NPN epitaxial planar type Unit : mm 0.20+0.05 –0.02 (0.30) 4 • Features 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) UP0421x UP04210 UP04211 UP04213 UP04214 UP04215 UP04216

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0421x Series Silicon NPN epitaxial planar type Unit : mm 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d • Features 1 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05


    Original     		PDF 2002/95/EC) UP0421x

    UP04210

    Abstract: UP04211 UP04213 UP04214 UP04215 UP04216
    Text: Composite Transistors UP0421x Series Silicon NPN epitaxial planar type Unit : mm 0.20+0.05 –0.02 0.30 4 • Features 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor)


    Original     		PDF UP0421x UP04210 UP04211 UP04213 UP04214 UP04215 UP04216 UP04210 UP04211 UP04213 UP04214 UP04215 UP04216

    transistor k 4213

    Abstract: k 4213 4213 UP04210 UP04211 UP04213 UP04214 UP04215 UP04216
    Text: Composite Transistors UP04210/4211/4213/4214/4215/4216 Silicon NPN epitaxial planar transistor 4 • Features 1 5˚ 2 3 0.50 (0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package (Transistors with built-in resistor) • Reduction of the mounting area and assembly cost by one half


    Original     		PDF UP04210/4211/4213/4214/4215/4216 UP04210 UP04211 UP04213 UP04214 UP04215 UP04216 transistor k 4213 k 4213 4213 UP04210 UP04211 UP04213 UP04214 UP04215 UP04216

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0421x Series Silicon NPN epitaxial planar type Unit : mm 0.20+0.05 –0.02 (0.30) 4 • Features 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Two elements incorporated into one package


    Original     		PDF 2002/95/EC) UP0421x UP04210 UP04211 UP04213 UP04214 UP04215 UP04216

    mip411

    Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 mip411 MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291

    UP04210

    Abstract: UP04211 UP04213 UP04214 UP04215 UP04216 JIS D 4215
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors UP0421x Series Silicon NPN epitaxial planar type Unit : mm 0.20+0.05 –0.02 (0.30) 4 M Di ain sc te on na tin nc ue e/ d • Features 1 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05


    Original     		PDF 2002/95/EC) UP0421x UP04210 UP04211 UP04213 UP04214 UP04215 UP04216 JIS D 4215