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    UPD42S1 Search Results

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    UPD42S1 Price and Stock

    NEC Electronics Group UPD42S18165G5-70

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    Onlinecomponents.com UPD42S18165G5-70 846
    • 1 $38.32
    • 10 $15.96
    • 100 $6.86
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    NEC Electronics Group UPD42S18165LG5A60-7JF

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    Bristol Electronics UPD42S18165LG5A60-7JF 140
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    NEC Electronics Group UPD42S18165G5-60-7JF

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    Bristol Electronics UPD42S18165G5-60-7JF 77 1
    • 1 $9
    • 10 $6.75
    • 100 $5.4
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    Quest Components UPD42S18165G5-60-7JF 61
    • 1 $12
    • 10 $9
    • 100 $8.1
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    NEC Electronics Group UPD42S18160-60

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    Bristol Electronics UPD42S18160-60 17
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    Quest Components UPD42S18160-60 82
    • 1 $27.3
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    UPD42S18160-60 13
    • 1 $12.7125
    • 10 $11.3
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    UPD42S18160-60 2
    • 1 $13.65
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    NEC Electronics Group UPD42S18165LG5-A60-7JF

    IC,DRAM,EDO,1MX16,CMOS,TSOP,50PIN,PLASTIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components UPD42S18165LG5-A60-7JF 8,728
    • 1 $3.75
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    • 10000 $1.3125
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    UPD42S18165LG5-A60-7JF 27
    • 1 $3.75
    • 10 $2.75
    • 100 $2.5
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    UPD42S1 Datasheets (144)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    uPD42S16160 NEC Semiconductor Selection Guide 1995 Original PDF
    uPD42S16160L NEC Semiconductor Selection Guide 1995 Original PDF
    uPD42S16161 NEC Semiconductor Selection Guide 1995 Original PDF
    uPD42S16161L NEC Semiconductor Selection Guide 1995 Original PDF
    uPD42S16165LG5-A50-7JF NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    UPD42S16165LG5-A60 NEC DRAM Original PDF
    uPD42S16165LG5-A60-7JF NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    UPD42S16165LG5-A70 NEC DRAM Original PDF
    uPD42S16165LG5-A70-7JF NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD42S16165LLE-A50 NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD42S16165LLE-A60 NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD42S16165LLE-A70 NEC 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-Word BY 16-BIT, EDO, BYTE READ/WRITE MODE Original PDF
    uPD42S16400 NEC Semiconductor Selection Guide 1995 Original PDF
    UPD42S16400G3-60 NEC DRAM Original PDF
    UPD42S16400G3-70 NEC DRAM Original PDF
    UPD42S16400G3-80 NEC DRAM Original PDF
    uPD42S16400L NEC Semiconductor Selection Guide 1995 Original PDF
    UPD42S16400LA-60 NEC DRAM Original PDF
    UPD42S16400LA-70 NEC DRAM Original PDF
    UPD42S16400LA-80 NEC DRAM Original PDF
    ...

    UPD42S1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 14t tv

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / uPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE D e s c rip tio n The /UPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PDF uPD42S17800 uPD4217800 /UPD42S17800, PD42S17800 28-pin /JPD42S17800-60, pPD42S17800-70, VP15-207-2 b427525 nec 14t tv

    d42s

    Abstract: n010 marking
    Text: DATA SHEET MOS INTEGRATED CIRCUIT uPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M -W ORD BY 4-BIT, EDO Description The ,uPD42S16405L, 4216405L are 4,194,304 w ords by 4 bits CMOS dynam ic RAM with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16405L uPD4216405L 4216405L PD42S16405L 26-pin d42s n010 marking

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT _ _ _ _ _ _ _ _ /¿¿P P 42S 16400, 4216400, 42S 17400,4217400 16 M-BIT DYNAM IC RAM 4 M-WORD B Y 4-BIT, F A S T P A G E M ODE Description The ,uPD42S16400, 4216400, 42S17400, 4217400 are 4,194,304 words by 4 bits CM O S dynamic RAM s. The


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    PDF uPD42S16400 uPD4216400 uPD42S17400 uPD4217400 42S16400, 42S17400 26-pin 80ote IR35-207-2

    IPD42S18165-60

    Abstract: tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT / /¿ P D 4 2 S 1 8 1 6 5 , 4 2 1 8 1 6 5 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE EDO , BYTE READ/WRITE MODE D e s c rip tio n The ,uPD42S18165,4218165 are 1,048,576 words by 16 bits C M O S dynamic RAMs with optional hyper page mode


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    PDF 16-BIT, uPD42S18165 uPD4218165 fiPD42S18165 PD42S18165, 50-pin 42-pin iPD42S18165-60, PD42S18165-70, 043lg IPD42S18165-60 tfk 014 PD42S18165 HV Tr 3 TFK 227 PD4218165

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE The ,uPD42S18160L, 4218160L are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and


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    PDF 16-BIT, uPD42S18160L 4218160L PD42S18160L 50-pin 42-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S17805, 4217805 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, HYPER PAGE MODE description The UPD42S17805,4217805 are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.


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    PDF UPD42S17805, JUPD42S17805 PD42S17805 JUPD42S17805, 28-pin 370to 008to PD42S17805, uPD42S17805

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT MC-42S2000LAB32S SERIES 2 M-WORD BY 32-BIT DYNAMIC RAM MODULE SO DIMM FAST PAGE MODE Description The MC-42S2000LAB32S series is a 2,097,152 words by 32 bits dynamic RAM m odule (Small O utline DIMM) on which 4 pieces of 16 M DRAM: ,uPD42S17800L. are assembled.


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    PDF MC-42S2000LAB32S 32-BIT uPD42S17800L m//m/77//r//TT/ 72PIN M72S-50A1-1

    D42S16165

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S16165L, 4216165L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, EDO, BYTE READ/WRITE MODE, Description The /xPD42S16165L, 4216165L are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16165L uPD4216165L 16-BIT, /xPD42S16165L, 4216165L /xPD42S16165L PD42S16165L, 50-pin 42-pin D42S16165

    EI marking

    Abstract: D42S17805L-A50
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT ¿ ^ 0 4 2 5 1 7 8 0 5 1 ., 4 2 1 7 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The ,uPD42S17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S17805L uPD4217805L 42S17805L iPD42S17805L, 4217805L 28-pin IR35-207-3 VP15-207-3 EI marking D42S17805L-A50

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S16400L, 42164001 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE D escrip tio n The ,uPD42S16400L, 4216400L, 42S17400L, 4217400L are 4,194,304 words by 4 bits dynamic CMOS RAMs. The


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    PDF uPD42S16400L 4216400L, 42S17400L, 4217400L PD42S16400L, 42S17400L 26-pin

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT U P D 42S 18165, 4218165 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, HYPER PAGE MODE, BYTE READ/WRITE MODE description The,uPD42S18165,4218165 are 1,048,576 words by 16 bits CMOS dynamic RAMs with optional hyper page mode. Hyper page mode is a kind of the page mode and is useful for the read operation.


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    PDF 16-BIT, uPD42S18165 PD42S18165 JUPD42S18165, 50-pin 42-pin PD42S18165, /iPD42S18165GS, 42181SSG5:

    NEC uPD 833

    Abstract: NEC 4216160
    Text: NEC / DATA SHEET MOS INTEGRATED CIRCUIT _ ^uPD42S16160,4216160,42S18160,4218160 1 6 M - B IT D Y N A M IC R A M 1 M -W O R D B Y 1 6 -B IT , F A S T P A G E M O D E , B Y T E R E A D / W R IT E M O D E Description T h e ^ P D 4 2 S 1 6 1 6 0 , 4 2 1 6 1 6 0 , 4 2 S 1 8 1 6 0 , 4 2 1 8 1 6 0 a re 1 ,0 4 8 , 5 7 6 w o rd s b y 16 b its C M O S d yn a m ic R A M s. T h e


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    PDF uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 50-pin 42-pin VP15-207-2 NEC uPD 833 NEC 4216160

    4218160LE-60

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT ¿¿PD 42S18160, 4 2 1 8 1 6 0 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The ,uPD42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The fast page mode and


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    PDF 42S18160, 16-BIT, uPD42S18160 PD42S18160 50-pin 42-pin 4218160LE-60

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET / MOS INTEGRATED CIRCUIT ;UPD42S16400L, 4216400L, 42S17400L, 4217400L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, FAST PAGE MODE Description The ¿¿PD42S16400L, 4 2 1 6400L, 42S17400L, 4 2 1 7400L are 4,194,304 words by 4 bits CMOS dynam ic RAMs. The


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    PDF uPD42S16400L uPD4216400L uPD42S17400L uPD4217400L PD42S16400L, 6400L, 42S17400L, 7400L /xPD42S16400L, 17400L

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT /¿PD42S17800,4217800 16 M BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The/iPD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PDF uPD42S17800 uPD4217800 The/iPD42S17800, PD42S17800 28-pin /jPD42S juPD42S17800-70 PD42S17800-80, 130su

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /x P D 4 2 S 1 7 4 0 5 , 4 2 1 7 4 0 5 16M-BIT DYNAMIC RAM 4M-WORD BY 4-BIT, HYPER PAGE MODE EDO D escription The /¿PD42S17405,4217405 are 4,194,304 words by 4 bits CMOS dynamic RAMs with optional hyper page mode (EDO).


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    PDF 16M-BIT uPD42S17405 uPD4217405 iPD42S17405 PD42S17405, 26-pin iPD42S17

    UPD42S18160G5-70-7-JF

    Abstract: UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF
    Text: DATA SHEET / MOS INTEGRATED CIRCUIT / PD42S16160,4216160,42S18160,4218160 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE D e s c rip tio n The /xPD42S16160, 4216160, 42S18160, 4218160 are 1,048, 576 words by 16 bits CMOS dynamic RAMs. The


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    PDF uPD42S16160 uPD4216160 uPD42S18160 uPD4218160 16-BIT, /xPD42S16160, 42S18160, PD42S16160, 42S18160 50-pin UPD42S18160G5-70-7-JF UPD42S18160G5707JF uPD42S18160-50 UPD4216160G uPD42S18160G5-50-7JF UPD4216160G5-50 PD42S18160-60 UPD42S18160G5-60-7JF NEC 4216160 UPD4218160G5-80-7JF

    LE347

    Abstract: toba Q 0265 R HS 8180 42S18180
    Text: L427S2S DQ4 2 4 M4 b 70 • NECE MOS INTEGRATED CIRCUIT ju P D 4 2 S 1 6 1 8 0 ,4 2 S 1 7 1 8 0 ,4 2 S 1 8 1 8 0 16 M BIT D Y N A M IC RAM FAST PAGE M O D E & BYTE R E A D /W R IT E M ODE - P R E LIM IN A R Y -D ESCRIPTIO N


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    PDF L427S2S uPD42S16180 uPD42S17180 uPD42S18180 475mil) P32VF-100-475A LE347 toba Q 0265 R HS 8180 42S18180

    uPD42S16405-60

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S16405, 4216405 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, EDO Description The /¿PD42S16405, 4216405 are 4,194,304 w ords by 4 bits CMOS dynam ic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S16405 uPD4216405 PD42S16405, PD42S16405 26-pin uPD42S16405-50 uPD42S16405-60 uPD42S16405-70

    UPD42S17805LG5-A60-7JD

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ¿J P D 4 2 S 1 7 8 0 5 L , 4 2 1 7 8 0 5 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, EDO Description The /xPD42S17805L, 4217805L are 2,097,152 words by 8 bits CMOS dynamic RAMs with optional EDO. EDO is a kind of the page mode and is useful for the read operation.


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    PDF uPD42S17805L uPD4217805L /xPD42S17805L /xPD42S17805L, 4217805L 28-pin UPD42S17805LG5-A60-7JD

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-42S2LFB64S 3.3 V OPERATION 2M -W O RD BY 64-B IT DYNAM IC RAM M ODULE SO DIM M , EDO Description The M C -42S2LFB64S is a 2,097,152 w ords by 64 bits dynam ic RAM module (Small Outline DIMM) on which 8 pieces of 16 M DRAM: /¿PD42S17805L are assembled.


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    PDF MC-42S2LFB64S -42S2LFB64S uPD42S17805L C-42S2LFB64S-A60 C-42S2LFB64S-A70

    D42S18160

    Abstract: d42s181 D42S1816 UPD42S18160LG5A-60
    Text: D A T A SHEET / MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 1 6 0 L , 4 2 1 6 1 6 0 L. 4 2 S 1 8 1 6 0 L , 4 2 1 8 1 6 0 L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 1 M-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE Description The /¿PD42S16160L, 4216160L, 4 2S 18160L, 4 2 18160L are 1,048, 576 w ords by 16 bits CMOS dynam ic RAMs.


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    PDF 16-BIT, uPD42S16160L uPD4216160L uPD42S18160L uPD4218160L PD42S16160L, 18160L 50-pin 42-pin D42S18160 d42s181 D42S1816 UPD42S18160LG5A-60

    001107

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT /¿ P D 42S 16405L , 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE EDO D e s c rip tio n T h e/iP D 42S 16 405L , 4216405L a re 4 ,1 94,304 words by 4 bits CMOS dynam ic RAM with optional hyper page mode


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    PDF 16405L 4216405L uPD42S16405L uPD4216405L PD42S16405L 16405L, 4216405L 26-pin VP15-207-2 001107

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD42S17800,4217800 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE ★ Description The ¿¡PD42S17800, 4217800 are 2,097,152 words by 8 bits CMOS dynamic RAMs. The fast page mode capability realize high speed access and low power consumption.


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    PDF PD42S17800 PD42S17800, 28-pin