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Rochester Electronics LLC UPD5740T6N-E2-A IC AMP GPS 470MHZ-770MHZ 6TSON
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DigiKey	UPD5740T6N-E2-A	Bulk			541	1 - 10 - 100 - 1000 $0.55 10000 $0.55	Buy Now
Rochester Electronics LLC UPD5742T6J-E4-A IC OPAMP GP 1 CIRCUIT 3MINIMOLD
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DigiKey	UPD5742T6J-E4-A	Bulk			773	1 - 10 - 100 - 1000 $0.39 10000 $0.39	Buy Now
California Eastern Laboratories (CEL) UPD5740T6N-EVAL-A EVAL BOARD UPD5740T6N
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DigiKey	UPD5740T6N-EVAL-A	Box				1 - 10 - 100 - 1000 - 10000 -	Buy Now
NEC Electronics Group UPD5742T6J-E4-A Narrow Band Medium Power Amplifier, 1 Func, MOS '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	UPD5742T6J-E4-A		90,000		1	1 $0.3733 10 $0.3733 100 $0.3509 1000 $0.3173 10000 $0.3173	Buy Now
Renesas Electronics Corporation UPD5740T6N-E2-A Analog Circuit, BICMOS, PDSO6 '
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	UPD5740T6N-E2-A		2,700		1	1 $0.5333 10 $0.5333 100 $0.5013 1000 $0.4533 10000 $0.4533	Buy Now

UPD574 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
UPD5740T6N-EVAL-A		California Eastern Laboratories	RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD UPD5740T6N		Original	PDF

UPD574 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
mobile phone basic block diagram Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT Text: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	G0706 PX10020EJ41V0PF mobile phone basic block diagram PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT	PDF
FET marking code g5d Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .	Original	R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic	PDF
marking C3U Abstract: 24-70MHZ T6N 600 HS350 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	M8E0904E marking C3U 24-70MHZ T6N 600 HS350	PDF
nec mosfet marked v75 Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77	PDF
av 2.2 k 100 Abstract: HS350 Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PD5742T6J PU10743JJ01V0DS IR260 WS260 HS350 av 2.2 k 100 HS350	PDF
HS350 Abstract: PD5741T6J Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PD5741T6J PU10729JJ01V0DS IR260 WS260 HS350 HS350 PD5741T6J	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original		PDF
UPC8236 Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5742T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5742T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.	Original	PD5742T6J PD5742T6J	PDF
SMD M05 sot23 Abstract: NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404 Text: 2013-2014 RF & Wireless Semiconductors P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories CEL is the exclusive sales and marketing partner in the Americas for products made by the Compound Semiconductor Devices Business Division (CSDBD) of Renesas Electronics Corporation, formerly	Original	2013/4M SMD M05 sot23 NE5531 nE352 A3 smd sot-343 transistor smd m05 SMD transistor M05 transistor smd code 404	PDF
HS350 Abstract: No abstract text available Text: お客様各位カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社	Original	PD5747T6J PU10776JJ01V0DS IR260 WS260 HS350 HS350	PDF
BA 7891 NG Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104 Text: 释放潜能 RF 手册第 16 版高性能 RF 产品应用和设计手册 2012 年 6 月恩智浦助您释放下一代 RF 和微波设计的潜能恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进	Original	PRF957 TFF1003HN TFF1007HN TFF1014HN TFF1015HN TFF1017HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN BA 7891 NG bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5741T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5741T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.	Original	PD5741T6J PD5741T6J	PDF
PD5740T6N Abstract: No abstract text available Text: DATA SHEET SiGe BiCMOS INTEGRATED CIRCUIT PD5740T6N LOW NOISE WIDEBAND AMPLIFIER IC WITH THROUGH FUNCTION DESCRIPTION The μPD5740T6N is a low noise wideband amplifier IC mainly designed for the portable digital TV application. This IC has achieved low noise figure and the wideband operation. The μPD5740T6N has an LNA pass-through	Original	PD5740T6N PD5740T6N M8E0904E	PDF

ic isl 887 Abstract: 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03 Text: RF & マイクロ波デバイスシステムブロック www.renesas.com 2010.04 目次 1. はじめに •··········································································································································· 3	Original	PA86x PG2158T5K PC3218T5Y NES1823M-45, NES1823M-180, NES1823M-240, NES1823S-45, NES1823S-90 R09CA0001JJ0100 PX10020JJ42V0PF ic isl 887 2SC5508 NE3514 SW SPDT NE3515S02 NE5510279A NESG2031M05 PG2179 NE3509M04 NE3517S03	PDF
HS350 Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF
mppt ic Abstract: PS9306 mppt PS9317 UPD5740 boost converter mppt dip package uPD5740T6N PS9303 PS9305 power line communication modem Text: ZUD-CE-10-0005 2010年1月15日スマートグリッド/スマートホームパンフレット NECエレクトロニクス株式会社汎用マイコンシステム事業部 1 NECエレクトロニクスのエコ・コンセプト世界各地でエコ化へ向けた様々な取組みが行われています。NECエレクトロニクスではエコ実	Original	ZUD-CE-10-0005 NEC8/1616/32 LSIFSK10020kbps 10020kbps 50k500kHz CRC16 20MHz 44QFP mppt ic PS9306 mppt PS9317 UPD5740 boost converter mppt dip package uPD5740T6N PS9303 PS9305 power line communication modem	PDF
SMD transistor M05 Abstract: smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR Text: NEC XXXXXXXXXX RF & Wireless Semiconductors 2010 2 P R O D U C T S b y A P P L I C AT I O N California Eastern Laboratories serves designers, OEMs and contract manufacturers in the RF & Wireless, Mobilecomm, Multimedia, Broadband Communications, Industrial Control, and Automated Test Equipment ATE	Original	10/2M SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd UPD5740T6N UPG2159T6R SMD transistor M05 driver 50 VOLTS 5 amp smd sot-89 TRANSISTOR	PDF
BB 509 varicap diode Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s	Original		PDF
mc10087f1 Abstract: mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059 Text: 1／89 Lead-free Semiconductor Product Conditions Renesas Electronics Lead-free Semiconductor Product Conditions August 17, 2010 1.Please inquire of Renesas Electronics sales person about lead-free product status while is not listed in the following table.	Original	IR260/WS260/HS350 IR260/HS350 mc10087f1 mc-10041 mc-10043 MC-10087F1-XXX MC-10044 MC-10051BF1 2SC5664 2SC5292 UPC1701C mc-10059	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET MOS ANALOG INTEGRATED CIRCUIT PD5747T6J LOW NOISE AND HIGH GAIN AMPLIFIER FOR IMPEDANCE CONVERTER OF MICROPHONE DESCRIPTION The μPD5747T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics.	Original	PD5747T6J PD5747T6J M8E0904E	PDF
BGU7073 Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188 Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF
HS350 Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	M8E0904E HS350	PDF
HS350 Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original		PDF

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UPD574 Search Results

UPD574 Price and Stock

Rochester Electronics LLC UPD5740T6N-E2-A

Rochester Electronics LLC UPD5742T6J-E4-A

California Eastern Laboratories (CEL) UPD5740T6N-EVAL-A

NEC Electronics Group UPD5742T6J-E4-A

Renesas Electronics Corporation UPD5740T6N-E2-A

UPD574 Datasheets (1)

UPD574 Datasheets Context Search

mobile phone basic block diagram

FET marking code g5d

marking C3U

nec mosfet marked v75

av 2.2 k 100

HS350

2SK2500

UPC8236

Untitled

SMD M05 sot23

HS350

BA 7891 NG

Untitled

PD5740T6N

ic isl 887

HS350

mppt ic

SMD transistor M05

BB 509 varicap diode

mc10087f1

Untitled

BGU7073

HS350

HS350